Abstract: Disclosed are wholly aromatic polyamide filament and a method of manufacturing the same, characterized by comprising multi-stage injection of a coagulant with sulfuric acid concentration lowered sequentially stage by stage, to a spun material fed into a coagulant injection tank. The present invention enables increase of a spinning and take-up velocity without occurrence of thread cutting by uniformly and evenly coagulating surface and inside of the spun material. In addition, the present invention recovers the coagulant or water already used and reuses the recovered coagulant or water in the earlier stages, so that it has advantages of saving production costs and reducing environmental contamination. Accordingly, the wholly aromatic polyamide filament produced according to the present invention has high crystallinity X, large apparent crystal size ACS and reduced defects in the crystal itself, thereby exhibiting more improved physical properties such as strength and modulus.

Abstract: Example embodiments are directed to a switching device of an active display device and a method of driving the switching device, such that electrical reliability of the active display device is improved. The switching device of the active display device includes a plurality of thin film transistors (TFTs) that are connected in series. Except for a refresh time duration during which the plurality of TFTs of the switching device are simultaneously turned ON, a positive voltage is applied to at least one of the plurality of TFTs of the switching device so that a reliability of the switching device may be improved.

Abstract: An anthracene derivative represented by Formula 1 is disclosed. An organic light-emitting device including an anode, a cathode, and an organic layer between the anode and the cathode, where the organic layer includes at least one anthracene derivative represented by Formula 1, is also disclosed. A method of manufacturing the organic light-emitting device is also disclosed.

Abstract: Embodiments provide a light emitting device package including a package body having a through-hole; a radiator disposed in the through-hole and including an alloy layer having Cu; and a light emitting device disposed on the radiator, wherein the alloy layer includes at least one of W or Mo, and wherein the package body includes cavity including a sidewall and a bottom surface, and wherein the through-hole is formed in the bottom surface.

Abstract: This disclosure relates to a film for a tire inner liner including a base film layer that has 3 glass transition temperature peaks and an adhesive layer including a resorcinol-formalin-latex(RFL)-based adhesive, and a method for manufacturing the film for a tire inner liner.

Abstract: Disclosed is a light emitting device package. The light emitting device includes a package body having a cavity defined by a sidewall and a bottom surface, a light emitting device disposed in the cavity, a radiator inserted into the package body and disposed below the light emitting device, and a second electrode pattern disposed around the radiator and electrically connected to the light emitting device via wire bonding. The second electrode pattern includes a first region to which a wire is bonded, and a second region connected to the first region, and a width of the first region differs from a width of the second region.

Abstract: Example embodiments are directed to a switching device of an active display device and a method of driving the switching device, such that electrical reliability of the active display device is improved. The switching device of the active display device includes a plurality of thin film transistors (TFTs) that are connected in series. Except for a refresh time duration during which the plurality of TFTs of the switching device are simultaneously turned ON, a positive voltage is applied to at least one of the plurality of TFTs of the switching device so that a reliability of the switching device may be improved.

Abstract: A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration.

Abstract: Embodiments provide a light emitting device package including a package body having a through-hole; a radiator disposed in the through-hole and including an alloy layer having Cu; and a light emitting device disposed on the radiator, wherein the alloy layer includes at least one of W or Mo, and wherein the package body includes cavity including a sidewall and a bottom surface, and wherein the through-hole is formed in the bottom surface.

Abstract: An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.

Abstract: The present invention provides cellulose-based fibers including cellulose and at least one polymer selected from the group consisting of a polysiloxane, a polyacrylic acid, a polyacrylamide, an m-aramid, and a polyvinylalcohol/polystyrene copolymer, and a tire cord including the same. Furthermore, the cellulose-based fibers of the present invention have an advantage in superior elongation and tenacity of the prior cellulose fibers by blending at least one polymer having a functional group that is capable of a hydrogen bond with a hydroxyl group of a cellulose molecule.

Abstract: The present invention relates to a film for a tire inner liner including a base film layer including a copolymer or a mixture of a polyamide-based resin and a polyether-based resin, and an adhesive layer including a resorcinol-formalin-latex (RFL)-based adhesive, and having low shrinkage rate when elongated at a high temperature and then cooled to room temperature, and a method for manufacturing the same.

Abstract: A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.

Abstract: Enclosed are a mobile terminal and a method of performing handover. The mobile terminal is connected to a selected network among a plurality of networks sensed in accordance with the movement of the mobile terminal so that handover is performed between different networks and that a service used by the mobile terminal is continuously provided. Therefore, the convenience of a user is improved and network utility is improved.

Abstract: Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer.

Abstract: Disclosed are wholly aromatic polyamide filament and a method of manufacturing the same, characterized in that, in the process of preparing the wholly aromatic polyamide polymer, the aromatic diamine, aromatic diacid chloride and polymerization solvent put into the reactor 20 are agitated by an agitation device which is installed in the reactor 20 and consists of: (i) a rotor 3 driven by a motor 2 and having a plurality of pins 3a; and (ii) a stator 4 having a plurality of pins 4a, wherein spin speed of the rotor 3 is controlled to 10 to 100 times of both of feeding rates for the aromatic diacid chloride and the aromatic diamine in the polymerization solvent into the reactor and, at the same time, contact frequency between the pins 3a and the pins 4a is regulated within a range of 100 to 1,000 Hz.

Abstract: An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer.

Abstract: Provided are a driving device for a unit pixel of an organic light emitting display having an improved structure and a method of manufacturing the same.

Abstract: Disclosed is a light emitting device package. The light emitting device includes a package body having a cavity defined by a sidewall and a bottom surface, a light emitting device disposed in the cavity, a radiator inserted into the package body and disposed below the light emitting device, and a second electrode pattern disposed around the radiator and electrically connected to the light emitting device via wire bonding. The second electrode pattern includes a first region to which a wire is bonded, and a second region connected to the first region, and a width of the first region differs from a width of the second region.