Abstract: A system and a method of generating radiation and/or particle emissions are disclosed. In at least some embodiments, the system includes at least one laser source that generates a first pulse and a second pulse in temporal succession, and a target, where the target (or at least a portion the target) becomes a plasma upon being exposed to the first pulse. The plasma expand after the exposure to the first pulse, the expanded plasma is then exposed to the second pulse, and at least one of a radiation emission and a particle emission occurs after the exposure to the second pulse. In at least some embodiments, the target is a solid piece of material, and/or a time period between the first and second pulses is less than 1 microsecond (e.g., 840 ns).

Abstract: A system and method of generating radiation are disclosed. In at least some embodiments, the system is suitable for use as (or as part of) an extreme ultraviolet lithography (EUVL) light source. Also, in at least some embodiments, the system includes a laser source for generating a laser pulse, a target including a solid material, and a lens device that assists in directing the laser pulse toward the target. At least a portion of the target becomes a plasma that emits radiation upon being exposed to the laser pulse. The laser pulse has a pulse duration of at least 50 nanoseconds and, in at least some such embodiments, has a pulse duration of at least 100 nanoseconds.

Abstract: A system and a method of generating radiation and/or particle emissions are disclosed. In at least some embodiments, the system includes at least one laser source that generates a first pulse and a second pulse in temporal succession, and a target, where the target (or at least a portion the target) becomes a plasma upon being exposed to the first pulse. The plasma expand after the exposure to the first pulse, the expanded plasma is then exposed to the second pulse, and at least one of a radiation emission and a particle emission occurs after the exposure to the second pulse. In at least some embodiments, the target is a solid piece of material, and/or a time period between the first and second pulses is less than 1 microsecond (e.g., 840 ns).