Patents by Inventor Yi-Chen Chen
Yi-Chen Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11972971Abstract: A wafer lift pin system is capable of dynamically modulating or adjusting the flow of gas into and out of lift pins of the wafer lift pin system to achieve and maintain a consistent pressure in supply lines that supply the gas to the lift pins. This enables the wafer lift pin system to precisely control the speed, acceleration, and deceleration of the lift pins to achieve consistent and repeatable lift pin rise times and fall times. A controller and various sensors and valves may control the gas pressures in the wafer lift pin system based on various factors, such as historic rise times, historic fall times, and/or the condition of the lift pins. This enables smoother and more controlled automatic operation of the lift pins, which reduces and/or minimizes wafer shifting and wafer instability, which may reduce processing defects and maintain or improve processing yields.Type: GrantFiled: March 5, 2021Date of Patent: April 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chen Chen, Yi-Fam Shiu, Cheng-Lung Wu, Yang-Ann Chu, Jiun-Rong Pai
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Publication number: 20240088210Abstract: Various embodiments of the present disclosure are directed towards a trench capacitor with a trench pattern for yield improvement. The trench capacitor is on a substrate and comprises a plurality of capacitor segments. The capacitor segments extend into the substrate according to the trench pattern and are spaced with a pitch on an axis. The plurality of capacitor segments comprises an edge capacitor segment at an edge of the trench capacitor and a center capacitor segment at a center of the trench capacitor. The edge capacitor segment has a greater width than the center capacitor segment and/or the pitch is greater at the edge capacitor segment than at the center capacitor segment. The greater width may facilitate stress absorption and the greater pitch may increase substrate rigidity at the edge of the trench capacitor where thermal expansion stress is greatest, thereby reducing substrate bending and trench burnout for yield improvements.Type: ApplicationFiled: November 17, 2023Publication date: March 14, 2024Inventors: Yuan-Sheng Huang, Yi-Chen Chen
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Patent number: 11921325Abstract: A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.Type: GrantFiled: February 27, 2020Date of Patent: March 5, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Yi-Chen Chen, Lee-Chuan Tseng, Shih-Wei Lin
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Patent number: 11916471Abstract: An example electronic device includes a controller to determine a user touch detection by a power adaptor coupled to the electronic device to operate the electronic device in an AC power mode. The power adaptor may comprise a proximity sensor to detect a user touch for detachment of the power adaptor from the electronic device, and a control circuit to operate a configuration pin in a low output mode to signal user touch detection. The controller may initiate central processing unit (CPU) throttling to reduce power consumption by the electronic device. The controller may further stop CPU throttling in response to detecting that the power adaptor has been detached from the electronic device. Further, the controller may switch the electronic device to a DC power mode to operate using DC power supplied by a battery of the electronic device in response to power adaptor detachment.Type: GrantFiled: October 18, 2019Date of Patent: February 27, 2024Assignee: Hewlett-Packard Development Company, L.P.Inventors: Ting-Yang Tsai, Yi-Chen Chen, Ching-Lung Wang, Yu-Min Shen
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Patent number: 11915957Abstract: A multiple die container load port may include a housing with an opening, and an elevator to accommodate a plurality of different sized die containers. The multiple die container load port may include a stage supported by the housing and moveable within the opening of the housing by the elevator. The stage may include one or more positioning mechanisms to facilitate positioning of the plurality of different sized die containers on the stage, and may include different portions movable by the elevator to accommodate the plurality of different sized die containers. The multiple die container load port may include a position sensor to identify one of the plurality of different sized die containers positioned on the stage.Type: GrantFiled: January 7, 2022Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Hung Huang, Cheng-Lung Wu, Yi-Fam Shiu, Yu-Chen Chen, Yang-Ann Chu, Jiun-Rong Pai
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Patent number: 11910538Abstract: In one example, an electronic device housing may include a substrate, an insulating adhesive layer formed on a surface of the substrate, a patterned electroless plating layer formed on the insulating adhesive layer, and a patterned electrolytic plating layer formed on the patterned electroless plating layer.Type: GrantFiled: August 8, 2019Date of Patent: February 20, 2024Assignee: Hewlett-Packard Development Company, L.P.Inventors: Yi-Chen Chen, Kun Cheng Tsai, Kuan-Ting Wu, Ying-Hung Ku, Hsueh Chen Hung
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Publication number: 20240012481Abstract: A haptic feedback method for an electronic system includes pairing an electronic device with a first wireless communication module and an input device with a second wireless communication module and a haptic feedback motor unit, inputting a control signal to the electronic device through the input device, and sending a wireless motor driving signal to the second wireless communication module of the input device by the first wireless communication module of the electronic device according to the control signal, so that the second wireless communication module generates a wired motor driving signal according to the wireless motor driving signal and directly transmits the wired motor driving signal to the haptic feedback motor unit to directly enable vibration of the haptic feedback motor unit.Type: ApplicationFiled: July 6, 2023Publication date: January 11, 2024Inventors: Yi-chen CHEN, Min-han LEE, Kun-tien TING
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Patent number: 11855133Abstract: Various embodiments of the present disclosure are directed towards a trench capacitor with a trench pattern for yield improvement. The trench capacitor is on a substrate and comprises a plurality of capacitor segments. The capacitor segments extend into the substrate according to the trench pattern and are spaced with a pitch on an axis. The plurality of capacitor segments comprises an edge capacitor segment at an edge of the trench capacitor and a center capacitor segment at a center of the trench capacitor. The edge capacitor segment has a greater width than the center capacitor segment and/or the pitch is greater at the edge capacitor segment than at the center capacitor segment. The greater width may facilitate stress absorption and the greater pitch may increase substrate rigidity at the edge of the trench capacitor where thermal expansion stress is greatest, thereby reducing substrate bending and trench burnout for yield improvements.Type: GrantFiled: December 7, 2022Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yuan-Sheng Huang, Yi-Chen Chen
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Publication number: 20230299217Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes a first doped region having a first doping type disposed in a semiconductor substrate. A second doped region having a second doping type different than the first doping type is disposed in the semiconductor substrate and laterally spaced from the first doped region. A waveguide structure is disposed in the semiconductor substrate and laterally between the first doped region and the second doped region. A photodetector is disposed at least partially in the semiconductor substrate and laterally between the first doped region and the second doped region. The waveguide structure is configured to guide one or more photons into the photodetector. The photodetector has an upper surface that continuously arcs between opposite sidewalls of the photodetector. The photodetector has a lower surface that continuously arcs between the opposite sidewalls of the photodetector.Type: ApplicationFiled: May 3, 2023Publication date: September 21, 2023Inventors: Chen-Hao Chiang, Shih-Wei Lin, Eugene I-Chun Chen, Yi-Chen Chen
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Publication number: 20230299126Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a capacitor. The capacitor is disposed over a semiconductor substrate. The capacitor includes a plurality of electrodes and a plurality of capacitor dielectric layers vertically stacked over one another. A contact structure overlies the plurality of electrodes, wherein the contact structure continuously extends from above a top surface of the plurality of electrodes to contact a first electrode in the plurality of electrodes. A first conductive via overlies and contacts the contact structure, wherein the first conductive via is directly electrically coupled to the first electrode by way of the contact structure.Type: ApplicationFiled: March 17, 2022Publication date: September 21, 2023Inventors: Yi-Chen Chen, Ming Chyi Liu
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Publication number: 20230281285Abstract: Example electronic devices are disclosed. In some examples, the electronic device includes a display panel, an image sensor, and a controller coupled to the image sensor. The controller is to use the image sensor to detect an interaction between a first viewer of the display panel and a second viewer of the display panel. In addition, the controller is to determine whether the second viewer is authorized to view information presented on the display panel based on the interaction. Further, the controller is to adjust a presentation of the information on the display panel based on the determination.Type: ApplicationFiled: August 6, 2020Publication date: September 7, 2023Applicant: Hewlett-Packard Development Company, L.P.Inventors: LEE WARREN ATKINSON, YI-CHEN CHEN, CHEN-FANG HSU
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Patent number: 11747899Abstract: In one example in accordance with the disclosure, a computing device is described. An example computing device includes a gaze tracking device. An example gaze tracking device identifies, from a captured image, a gaze region for a user viewing a display device coupled to the example computing device. The gaze region indicates a location on the display device where the user is looking. The example computing device includes a controller. An example controller determines a first window on the display device that is aligned with the gaze region and based on a determination that the first window is aligned with the gaze region, adjusts a video setting of a second window that is outside the gaze region.Type: GrantFiled: November 24, 2021Date of Patent: September 5, 2023Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Yi-Chen Chen, Nick Thamma, King Sui Kei, Chih-Hua Chen, Kun-Cheng Tsai
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Patent number: 11749762Abstract: Various embodiments of the present disclosure are directed towards a semiconductor device. The semiconductor device includes a first doped region having a first doping type disposed in a semiconductor substrate. A second doped region having a second doping type different than the first doping type is disposed in the semiconductor substrate and laterally spaced from the first doped region. A waveguide structure is disposed in the semiconductor substrate and laterally between the first doped region and the second doped region. A photodetector is disposed at least partially in the semiconductor substrate and laterally between the first doped region and the second doped region. The waveguide structure is configured to guide one or more photons into the photodetector. The photodetector has an upper surface that continuously arcs between opposite sidewalls of the photodetector. The photodetector has a lower surface that continuously arcs between the opposite sidewalls of the photodetector.Type: GrantFiled: June 24, 2020Date of Patent: September 5, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Hao Chiang, Shih-Wei Lin, Eugene I-Chun Chen, Yi-Chen Chen
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Patent number: 11675129Abstract: A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.Type: GrantFiled: July 27, 2022Date of Patent: June 13, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Yi-Chen Chen, Lee-Chuan Tseng, Shih-Wei Lin
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Publication number: 20230097616Abstract: Various embodiments of the present disclosure are directed towards a trench capacitor with a trench pattern for yield improvement. The trench capacitor is on a substrate and comprises a plurality of capacitor segments. The capacitor segments extend into the substrate according to the trench pattern and are spaced with a pitch on an axis. The plurality of capacitor segments comprises an edge capacitor segment at an edge of the trench capacitor and a center capacitor segment at a center of the trench capacitor. The edge capacitor segment has a greater width than the center capacitor segment and/or the pitch is greater at the edge capacitor segment than at the center capacitor segment. The greater width may facilitate stress absorption and the greater pitch may increase substrate rigidity at the edge of the trench capacitor where thermal expansion stress is greatest, thereby reducing substrate bending and trench burnout for yield improvements.Type: ApplicationFiled: December 7, 2022Publication date: March 30, 2023Inventors: Yuan-Sheng Huang, Yi-Chen Chen
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Patent number: 11545543Abstract: Various embodiments of the present disclosure are directed towards a trench capacitor with a trench pattern for yield improvement. The trench capacitor is on a substrate and comprises a plurality of capacitor segments. The capacitor segments extend into the substrate according to the trench pattern and are spaced with a pitch on an axis. The plurality of capacitor segments comprises an edge capacitor segment at an edge of the trench capacitor and a center capacitor segment at a center of the trench capacitor. The edge capacitor segment has a greater width than the center capacitor segment and/or the pitch is greater at the edge capacitor segment than at the center capacitor segment. The greater width may facilitate stress absorption and the greater pitch may increase substrate rigidity at the edge of the trench capacitor where thermal expansion stress is greatest, thereby reducing substrate bending and trench burnout for yield improvements.Type: GrantFiled: January 4, 2021Date of Patent: January 3, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yuan-Sheng Huang, Yi-Chen Chen
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Publication number: 20220373740Abstract: A semiconductor device is provided. The semiconductor device includes a waveguide over a substrate. The semiconductor device includes a first dielectric structure over the substrate, wherein a portion of the waveguide is in the first dielectric structure. The semiconductor device includes a second dielectric structure under the waveguide, wherein a first sidewall of the second dielectric structure is adjacent a first sidewall of the substrate.Type: ApplicationFiled: July 27, 2022Publication date: November 24, 2022Inventors: Yi-Chen CHEN, Lee-Chuan Tseng, Shih-Wei Lin
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Patent number: D998596Type: GrantFiled: October 7, 2021Date of Patent: September 12, 2023Assignee: CHENBRO MICOM CO., LTD.Inventors: Hsin-Lin Teng, Yi-Chen Chen
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Patent number: D1015123Type: GrantFiled: December 23, 2021Date of Patent: February 20, 2024Inventors: Yi-Hsuan Chen, Yi-Chen Chen
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Patent number: D1025074Type: GrantFiled: June 18, 2021Date of Patent: April 30, 2024Assignee: CHENBRO MICOM CO., LTD.Inventors: Chiung-Wei Lin, Yi-Chen Chen