Abstract: A method of polishing a metal layer comprising the following steps. A structure having an upper patterned dielectric layer with an opening therein is provided. A barrier layer is formed over the patterned upper dielectric layer and lining the opening. A metal layer is formed over the barrier layer, filling the opening. A first polish step employing a first slurry composition is conducted to remove a portion of the overlying metal layer. A second polish step employing the first slurry composition is conducted to: polish the partially removed overlying metal layer; and to expose portions of the barrier layer overlying the patterned upper dielectric layer. A third polish step employing a second slurry composition is conducted to remove the exposed barrier layer portions and exposing underlying portions of the patterned upper dielectric layer. A fourth polish step employing the second slurry composition and BTA is conducted to buff the exposed upper dielectric layer portions.

Abstract: A partial vertical memory cell and fabrication method thereof. A semiconductor substrate is provided, in which two deep trenches having deep trench capacitors respectively are formed, and the deep trench capacitors are lower than a top surface of the semiconductor substrate. A portion of the semiconductor outside the deep trenches is removed to form a pillar between. The pillar is ion implanted to form an ion-doped area in the pillar corner acting as a S/D area. A gate dielectric layer and a conducting layer are conformally formed on the pillar sequentially. An isolation is formed in the semiconductor substrate beside the conducting layer. The conducting layer is defined to form a first gate and a second gate.

Abstract: A liquid soap dispenser compromising a stationary base and a main body with a cover, a fastener is on the bottom of the stationary base, a concave is on top of the stationary base, a blocking board is on top of the concave, a holding hole with an open on top locates on the concave; the main body is in box shape with a “T” shape pillar on the back, a slot is on the bottom of the back of the main body; an inner brim is on the top of the main body to fit the inner cover, a protruding rib is on the back of the cover, a blocking brim surrounds the cover, a lock hole locates on the front of the blocking brim, a lock is inside the lock hole to lock the cover and the stationary base.

Abstract: A method of polishing a metal layer comprising the following steps. A structure having an upper patterned dielectric layer with an opening therein is provided. A barrier layer is formed over the patterned upper dielectric layer and lining the opening. A metal layer is formed over the barrier layer, filling the opening. A first polish step employing a first slurry composition is conducted to remove a portion of the overlying metal layer. A second polish step employing the first slurry composition is conducted to: polish the partially removed overlying metal layer; and to expose portions of the barrier layer overlying the patterned upper dielectric layer. A third polish step employing a second slurry composition is conducted to remove the exposed barrier layer portions and exposing underlying portions of the patterned upper dielectric layer. A fourth polish step employing the second slurry composition and BTA is conducted to buff the exposed upper dielectric layer portions.

Abstract: A partial vertical memory cell and fabrication method thereof. A semiconductor substrate is provided, in which two deep trenches having deep trench capacitors respectively are formed, and the deep trench capacitors are lower than a top surface of the semiconductor substrate. A portion of the semiconductor outside the deep trenches is removed to form a pillar between. The pillar is ion implanted to form an ion-doped area in the pillar corner acting as a S/D area. A gate dielectric layer and a conducting layer are conformally formed on the pillar sequentially. An isolation is formed in the semiconductor substrate beside the conducting layer. The conducting layer is defined to form a first gate and a second gate.

Abstract: A method for forming a uniform bottom electrode in a trench of a trench capacitor. A semiconductor substrate has a dense trench area and a less dense trench area with a plurality of trenches formed in both areas respectively. A hard mask layer is formed on the semiconductor substrate, and the trenches are filled with the mask layer. The hard mask layer is etched at an angle until the dense trench area and the less dense trench area in the semiconductor substrate are exposed to leave the hard mask layer in the trenches. Finally, the hard mask layers in the trenches are etched, and a uniform thickness of the hard mask layer in each trench is achieved.

Abstract: A method of fabricating shallow trench isolation. In the method, a refill step of oxide layer and a step of forming a sacrificial layer on the semiconductor substrate are applied after filling insulating layer into the shallow trenches. The purpose of the steps is to protect the oxide layer on the semiconductor substrate and the corner of the shallow trenches, used to isolate the STI.

Abstract: An improved thermal sensing alarm structure comprises a closed chassis having an upper casing with a Fresnel lens and a lower casing; a circuit board between the upper and lower casings; a plurality of wedges protruded from both inner lateral sides of the upper casing such that the upper and lower casing being latched by the latching grooves and wedges; a DC power socket, a long pin terminal, and battery power supply wire being soldered on the circuit board; at least one embedding groove with appropriate width and a set of terminal slot being disposed at an end of the lower casing, such that the circuit board can be inserted into the embedding groove and terminal slot and fixed by the DC power socket and long pin terminal.

Abstract: An improved thermal sensing alarm structure comprises a closed chassis having an upper casing with a Fresnel lens and a lower casing; a circuit board between the upper and lower casings; a plurality of wedges protruded from both inner lateral sides of the upper casing such that the upper and lower casing being latched by the latching grooves and wedges; a DC power socket, a long pin terminal, and battery power supply wire being soldered on the circuit board; at least one embedding groove with appropriate width and a set of terminal slot being disposed at an end of the lower casing, such that the circuit board can be inserted into the embedding groove and terminal slot and fixed by the DC power socket and long pin terminal.

Abstract: A method of fabricating shallow trench isolation. In the method, a refill step of oxide layer and a step of forming a sacrificial layer on the semiconductor substrate are applied after filling insulating layer into the shallow trenches. The purpose of the steps is to protect the oxide layer on the semiconductor substrate and the corner of the shallow trenches, used to isolate the STI.

Abstract: A soap feeding device. The device includes a soap reservoir and an arrangement for mounting a control device. The rear battery compartment includes a receiving space in which an opening is in the side of battery compartment for allowing a battery case containing several pairs of cells to be inserted, and the battery case is clung to two L-shaped tabs in the rear of frame. A peripheral groove is positioned around the frame, and a waterproof rubber ring is positioned around the peripheral groove. A peripheral flange is positioned in the front side of frame, and a pair of dividers is positioned on either side of the frame. A sliding block is positioned between the pair of dividers, and the sliding block has a latch extended from the slot on the annular flange.

Abstract: A soap feeding device mounted in a housing comprises an upper housing having a soap reservoir and a lower housing having a control assembly consisting of a power source, a sensor means including a circuit board, a transmission means including a drive means, a reduction gear set, and a crankshaft, and a feeding means. A setting switch on circuit board is extended through hole in the bottom of lower housing being enclosed by a waterproof silicone switch such that user may press the silicone switch to set the dropping of the device. The power source is activated once the sensor senses the stretching out of ones hand. Then reduction gear set is driven to rotate. The rotation of the gear causes the crankshaft to reciprocally move between a pair of clips. Thus the actuated bellow-like extruder compresses air into a barrel which is in cooperation with valve and poppet to extrude soap.