Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: A device includes a micro-organic light emitting diode (µ-OLED) display panel and an electronic component. An electrical connector electrically couples the µ-OLED display panel and the electronic component. An air duct is physically coupled to the µ-OLED display panel and the electronic component. The air duct functions to cool the µ-OLED display panel when air flows through the air duct. A system fan provides air flow to the air duct and dissipates heat away from the display panel. A system fan can be located disconnected from the µ-OLED display panel and can provide air flow to the air duct to dissipate heat away from the display panel. The device can be implemented with a single fan solution or a multiple fan solution (e.g., two or more fans).

Abstract: An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

Abstract: Cable assemblies for providing electrical communication between hinged sections of an electronic device are described. The cable assemblies can include a cover that covers one or more cables that run through a hinge region of the electronic device. The cable and cover can be drawn over a mandrel of the hinge region. The cover and the portions of the mandrel can be visible to a user at the hinge region of the electronic device. The cover can be sufficiently rigid to guide a path of the cable and protect the cable from bending beyond a prescribed angle during rotation of the electronic device at the hinge region. The cover can also be sufficiently rigid to prevent ceasing or folding of the cover and the cable during rotation of the electronic device at the hinge region.

Abstract: A device includes a micro-organic light emitting diode (?-OLED) display panel and an electronic component. An electrical connector electrically couples the ?-OLED display panel and the electronic component. A standoff is disposed between the electronic component and the ?-OLED display panel. The standoff physically couples the electronic component and the ?-OLED display panel with a gap therebetween. The gap thermally decouples the electronic component from the ?-OLED display panel. A U-shaped heat sink can be disposed in the standoff, and heat generated by the ?-OLED display can be mitigated by a system fan when a U-shaped heat sink is disposed in the standoff.

Abstract: A device includes a micro-organic light emitting diode (µ-OLED) display panel and an electronic component. An electrical connector electrically couples the µ-OLED display panel and the electronic component. A standoff is disposed between the electronic component and the µ-OLED display panel. The standoff physically couples the electronic component and the µ-OLED display panel with a gap therebetween. The gap thermally decouples the electronic component from the µ-OLED display panel. A fan that is integrated with the µ-OLED display panel is placed in the standoff and actively cools the display panel. When the fan provides air flow over the µ-OLED display panel, heat generated by the µ-OLED display is mitigated by cooling air.

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: Cable assemblies for providing electrical communication between hinged sections of an electronic device are described. The cable assemblies can include a cover that covers one or more cables that run through a hinge region of the electronic device. The cable and cover can be drawn over a mandrel of the hinge region. The cover and the portions of the mandrel can be visible to a user at the hinge region of the electronic device. The cover can be sufficiently rigid to guide a path of the cable and protect the cable from bending beyond a prescribed angle during rotation of the electronic device at the hinge region. The cover can also be sufficiently rigid to prevent ceasing or folding of the cover and the cable during rotation of the electronic device at the hinge region.

Abstract: Photoresists and methods of forming and using the same are disclosed. In an embodiment, a method includes spin-on coating a first hard mask layer over a target layer; depositing a photoresist layer over the first hard mask layer using chemical vapor deposition or atomic layer deposition, the photoresist layer being deposited using one or more organometallic precursors; heating the photoresist layer to cause cross-linking between the one or more organometallic precursors; exposing the photoresist layer to patterned energy; heating the photoresist layer to cause de-crosslinking in the photoresist layer forming a de-crosslinked portion of the photoresist layer; and removing the de-crosslinked portion of the photoresist layer.

Abstract: A device including a frame and an eyepiece is provided. The eyepiece includes a front glass, a rear glass, and an active element sandwiched between the front glass and the rear glass. The active layer is electrically activated, via an interconnect, by a flex circuit enclosed between a top portion of the frame and a cap, the flex circuit including a memory and a processor. A method for assembling the above device is also provided.

Abstract: An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes a chemical formula of MaXbLc, where M is a metal, X is a multidentate aromatic ligand that includes a pyrrole-like nitrogen and a pyridine-like nitrogen, L is an extreme ultraviolet (EUV) cleavable ligand, a is between 1 and 2, b is equal to or greater than 1, and c is equal to or greater than 1.

Abstract: An organometallic precursor for extreme ultraviolet (EUV) lithography is provided. An organometallic precursor includes an aromatic di-dentate ligand, a transition metal coordinated to the aromatic di-dentate ligand, and an extreme ultraviolet (EUV) cleavable ligand coordinated to the transition metal. The aromatic di-dentate ligand includes a plurality of pyrazine molecules.

Abstract: Metal-comprising resist layers (for example, metal oxide resist layers), methods for forming the metal-comprising resist layers, and lithography methods that implement the metal-comprising resist layers are disclosed herein that can improve lithography resolution. An exemplary method includes forming a metal oxide resist layer over a workpiece by performing deposition processes to form metal oxide resist sublayers of the metal oxide resist layer over the workpiece and performing a densification process on at least one of the metal oxide resist sublayers. Each deposition process forms a respective one of the metal oxide resist sublayers. The densification process increases a density of the at least one of the metal oxide resist sublayers. Parameters of the deposition processes and/or parameters of the densification process can be tuned to achieve different density profiles, different density characteristics, and/or different absorption characteristics to optimize patterning of the metal oxide resist layer.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate, including combining a first precursor and a second precursor in a vapor state to form a photoresist material, and depositing the photoresist material over the substrate. A protective layer is formed over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation through the protective layer to form a latent pattern in the photoresist layer. The protective layer is removed, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.

Abstract: A method of forming a pattern in a photoresist layer includes forming a photoresist layer over a substrate, and reducing moisture or oxygen absorption characteristics of the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern, and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a pattern.

Abstract: A method of manufacturing semiconductor device includes forming a multilayer photoresist structure including a metal-containing photoresist over a substrate. The multilayer photoresist structure includes two or more metal-containing photoresist layers having different physical parameters. The metal-containing photoresist is a reaction product of a first precursor and a second precursor, and each layer of the multilayer photoresist structure is formed using different photoresist layer formation parameters. The different photoresist layer formation parameters are one or more selected from the group consisting of the first precursor, an amount of the first precursor, the second precursor, an amount of the second precursor, a length of time each photoresist layer formation operation, and heating conditions of the photoresist layers.

Abstract: Cable assemblies for providing electrical communication between hinged sections of an electronic device are described. The cable assemblies can include a cover that covers one or more cables that run through a hinge region of the electronic device. The cable and cover can be drawn over a mandrel of the hinge region. The cover and the portions of the mandrel can be visible to a user at the hinge region of the electronic device. The cover can be sufficiently rigid to guide a path of the cable and protect the cable from bending beyond a prescribed angle during rotation of the electronic device at the hinge region. The cover can also be sufficiently rigid to prevent ceasing or folding of the cover and the cable during rotation of the electronic device at the hinge region.