Abstract: The present disclosure provides an interconnect structure, including a first interlayer dielectric layer, a bottom metal line including a first metal in the first interlayer dielectric layer, a conductive via including a second metal over the bottom metal line, wherein the second metal is different from the first metal, and the first metal has a first type of primary crystalline structure, and the second metal has the first type of primary crystalline structure, a total area of a bottom surface of the conductive via is greater than a total cross sectional area of the conductive via, and a top metal line over the conductive via, wherein the top metal line comprises a third metal different from the second metal.

Abstract: The present disclosure provides an interconnect structure, including a first interlayer dielectric layer, a bottom metal line including a first metal in the first interlayer dielectric layer, a conductive via including a second metal over the bottom metal line, wherein the second metal is different from the first metal, and the first metal has a first type of primary crystalline structure, and the second metal has the first type of primary crystalline structure, a total area of a bottom surface of the conductive via is greater than a total cross sectional area of the conductive via, and a top metal line over the conductive via, wherein the top metal line comprises a third metal different from the second metal.

Abstract: A semiconductor memory device is provided in the present invention, including a substrate, word lines in the substrate, bit lines over the word lines, partition structures between the bit lines and right above the word lines, storage node contacts in spaces defined by the bit lines and the partition structures and electrically connecting with the substrate, wherein a portion of the storage node contact protruding from top surfaces of the bit lines and the partition structures is contact pad, and contact pad isolation structures on the partition structures and between the contact pads, wherein the contact pad isolation structure includes outer silicon nitride layers and inner silicon oxide layers.

Abstract: The present disclosure provides a manufacturing method of an aluminum alloy composition. The manufacturing method includes the following steps in the sequence set forth: (S1) providing an aluminum master alloy, wherein the aluminum master alloy comprises aluminum and copper; (S2) adding chromium to the aluminum master alloy and performing a first melting; (S3) adding a tantalum-chromium alloy and performing a second melting; and (S4) adding silver and performing a third melting to form the aluminum alloy composition.

Abstract: A two-stage cycloid speed reducer comprises two rotating disc assemblies. Each rotating disc assembly comprises two cycloid discs. In other words, the cycloid speed reducer has four cycloid discs to be in contact with the corresponding rollers. Consequently, the load withstood by each cycloid disc is reduced. Since the cycloid speed reducer has stronger structural strength, the cycloid speed reducer can be applied to the high-load circumstance. Moreover, an eccentric assembly of the eccentric device includes a plurality of eccentric cylinders. The eccentric cylinders are disposed within the axle holes of the corresponding cycloid discs. Due to the eccentric cylinders, the eccentric direction of two cycloid discs is opposite to the eccentric direction of the other two cycloid discs. Consequently, it is not necessary to install an additional weight compensation device in the cycloid speed reducer to compensate the dynamic equilibrium. Moreover, the cycloid speed reducer can be assembled easily.

Abstract: A composition, an insulating material, and a method for preparing an insulating material are provided. The composition includes (a) 100 parts by weight of oligomer of Formula (I) (b) 20-50 parts by weight of polymer having at least two reactive functional groups, wherein the reactive functional group is a reactive-double-bond-containing functional group; (c) 1-5 parts by weight of photoinitiator; (d) 0.5-2 parts by weight of thermal initiator; and (e) 0.5-2 parts by weight of photoacid generator.

Abstract: An actuator is provided, including a fixed assembly and a movable assembly. The fixed assembly includes a coil module, a base, a first screwing member, and a linear rail. The first screwing member passes through the base and the linear rail, and the linear rail is positioned on the base. The movable assembly includes a U-shaped back board having an inner space, a first magnetic module, a second magnetic module aligned with the first magnetic module, and a sliding block. The first and second magnetic modules are disposed on the U-shaped back board and accommodated in the inner space. The coil module is disposed between the first magnetic module and the second magnetic module. The sliding block is positioned on the U-shaped back board in the inner space, and slidably connected to the linear rail.

Abstract: A pixel structure includes a data line, a scan line, a common signal line, a first switching element, a second switching element, a first pixel electrode, and a second pixel electrode. The first switching element is electrically connected to the scan line and the data line. The second switching element is electrically connected to the scan line and the common signal line. The first pixel electrode is electrically connected to the first switching element. The second pixel electrode is electrically connected to the second switching element. The second pixel electrode surrounds the first pixel electrode.

Abstract: The present disclosure provides an aluminum alloy composition and a manufacturing method thereof. By utilizing the mutually insoluble properties between tantalum and silver and sequentially adding chromium, tantalum and silver to an aluminum master alloy containing copper in plural times of melting, it avoids the eutectic reaction between chromium and silver, and required eutectic compositions are formed. Thus, the aluminum alloy composition with excellent corrosion resistance, fatigue resistance, wear resistance and high-temperature resistance is obtained. The aluminum alloy composition comprises 4.2 to 5.5 weight percent copper, 1.4 to 2.0 weight percent magnesium, 0.5 to 1.2 weight percent manganese, 0.05 to 1.0 weight percent silicon, 0.05 to 0.8 weight percent chromium, 0.01 to 0.5 weight percent tantalum, 0.01 to 0.5 weight percent silver and the balance of aluminum.

Abstract: The invention provides a memory and a forming method thereof. By connecting two node contact parts filled in two node contact windows at the edge and adjacent to each other, a large-sized combined contact can be formed, so that when preparing the node contact parts, the morphology of the combined contact at the edge position can be effectively ensured, and under the blocking protection of the combined contact with a large width, the rest of the node contact parts can be prevented from being greatly eroded, and the morphology accuracy of the independently arranged node contact parts can be improved, thereby being beneficial to improving the device performance of the formed memory.

Abstract: A digital display including a light unit, a display unit and a fixing unit is provided. The light unit is connected to the display unit, and the display unit and the fixing unit either are a single component or are each an independent component. The digital display can fix the display unit on an external substrate in an upright manner through the fixing unit.

Abstract: The disclosure provides a film composition, wherein the film composition includes an oligomer and a crosslinking agent. The oligomer can have a structure represented by Formula (I) wherein R1 and R2 are independently hydrogen, C1-20 alkyl group, C2-20 alkenyl group, C6-12 aryl group, C6-12 alkylaryl group, C5-12 cycloalkyl group, C6-20 cycloalkylalkyl group, alkoxycarbonyl group, or alkylcarbonyloxy group; R1 is not hydrogen when R2 is hydrogen; a is 0 or 1; 100?n?1; 100?m?1; and when n is not 0, the ratio of n to m is from 3:1 to 1:4. The weight ratio of the oligomer and the crosslinking agent can be from 9:1 to 3:7. The oligomer has a number average molecular weight (Mn) from 1,000 to 8,000.

Abstract: An antenna module includes a metal board, an inverted F metal plate and an antenna unit. A slot is provided between the inverted F metal plate and the metal board, the inverted F metal plate and the metal board are integrally formed, and the inverted F metal plate is disposed perpendicular to the metal board. The antenna unit is disposed corresponding to the slot and the inverted F metal plate, and includes a radiation part and a ground part. The radiation part is coupled to a signal feeding point and includes a first radiation body and a second radiation body. The first radiation body, the slot and the inverted F metal plate operate cooperatively to generate a wireless signal at a first operating frequency. The second radiation body, the slot and the inverted F metal plate operate cooperatively to generate a wireless signal at a second operating frequency.

Abstract: A circuit for touch sensing includes a driving unit, a self-capacitive sensor circuit, a mutual-capacitive sensor circuit and a control circuit. The driving is configured to generate a driving signal. The self-capacitive sensor circuit is configured to generate a self-capacitance sensing result. The mutual-capacitive sensor circuit is configured to receive the driving signal in order to generate a mutual-capacitance sensing result when the voltage of a node between the self-capacitive sensor circuit and the mutual-capacitive sensor circuit reaches a reference voltage. The control circuit receives and computes the self-capacitance sensing result and the mutual-capacitance sensing result in order to generate a sensing result. By utilizing the circuit for touch sensing of present disclosure, the accuracy and the efficiency of touch sensing can be enhanced.

Abstract: The invention relates to a detective molecule, and more particularly to a detective molecule and a kit for detecting a target molecule, a method for predicting fragrance production in an orchid, and a method for breeding a scented orchid.

Abstract: A bearing assembly and a rotary shaft apparatus employing the same are provided. The bearing assembly is rotatably coupled with a first shaft and a second shaft. The first bearing housing includes a first annular recess having a first axial depth. The first bearing is connected with the first annular recess and the first shaft and has a first axial thickness. The second bearing housing includes a second annular recess having a second axial depth. The second bearing is connected with the first annular recess, the second annular recess and the second shaft and has a second axial thickness. The spacer is disposed between the first bearing and the second bearing and has a third axial thickness. The sum of the first axial thickness, the second axial thickness and the third axial thickness is greater than the sum of the first axial depth and the second axial depth.

Abstract: Systems and methods are disclosed for a mechanical clip lock that may include a rigid substrate; a clip lock pin extending vertically from a surface of the rigid substrate; a semi-rigid arm having a first end coupled to the rigid substrate, the semi-rigid arm extending orthogonally from the rigid substrate; a clip lock socket disposed at a second end of the semi-rigid arm opposite the first end, the clip lock socket configured to releasably engage the clip lock pin; and a plurality of clipping pegs extending vertically from the surface of the rigid substrate, each of the plurality of clipping pegs disposed on an exterior portion of the clip lock pin, the plurality of clipping pegs configured to apply a compression force on a device when the clip lock socket and clip lock pin are releasably engaged, the compression force removably coupling the device to a printed circuit board.

Abstract: A communication apparatus is provided. A retaining wall structure electrically connected with a ground plane is disposed between a main circuit board and an antenna. A retaining wall part of the retaining wall structure has a thickness. A distance between the retaining wall part and the main circuit board is a first distance, and a distance between the retaining wall part and the antenna and is a second distance. A distance between the retaining wall and a shielding metal plate is a third distance. The projection of the antenna projected toward the retaining wall in the orthogonal projection direction falls on the retaining wall part.

Abstract: A wearable electronic device includes a middle frame, a metallic side wall, a dielectric element, and a antenna wiring circuit. The metallic side wall is disposed at one side of the middle frame and has a slot. The dielectric element is disposed at the slot and electrically isolates the metallic side wall and the middle frame. The antenna wiring circuit is disposed at the dielectric element and comprises a antenna pattern. The antenna pattern comprises first and second metal portions. The first metal portion comprises a slit surrounded by first to third segments. The first segment has a signal feeding terminal. The second metal portion is connected to the third segment and is located in the slit. The metallic side wall performs coupled resonant with the first metal portion and the second metal portion to generate a resonant frequency band.

Abstract: Provided is an enhancement mode HEMT device including a substrate, a channel layer, a barrier layer, a P-type semiconductor layer, a carrier providing layer, a gate electrode, a source electrode and a drain electrode. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The P-type semiconductor layer is disposed on the barrier layer. The carrier providing layer is disposed on the sidewall of the P-type semiconductor layer and extends laterally away from the P-type semiconductor layer. The gate electrode is disposed on the P-type semiconductor layer. The source electrode and the drain electrode are disposed on the carrier providing layer and at two sides of the gate electrode. A method of forming an enhancement mode HEMT device is further provided.