Abstract: An alarm analysis method capable of multi-purpose function. A plurality of efficiency indices are defined, comprising statistical-data-configuration, data-set, background-alarm-rate, peak-alarm-rate, active-alarm-distribution, bad-actors-identification, and alarm-report indices. A data warehouse is created according to the efficiency indices and using an online analytical processing method. A plurality of user interfaces are created according to the data warehouse and analysis results. The data warehouse is accessed using the user interfaces to retrieve the analysis results.

Abstract: The present invention provides a method for preventing corrosion of a bonding pad resulting from residual polymers on a surface of a semiconductor wafer. The bonding pad is a metallic layer formed on the surface of the semiconductor wafer. The semiconductor wafer comprises an inorganic passivation layer positioned above the bonding pad, and an organic dielectric layer positioned above the inorganic passivation layer. The passivation and dielectric layers comprise a hole etched to the bonding pad. The method uses an organic solution to clean off residual polymers on the surface of the bonding pad inside the hole to prevent corrosion of the bonding pad.

Abstract: A method of etching a silicon nitride layer. On a semiconductor substrate having a silicon nitride layer and a photo-resist layer on the silicon nitride layer formed thereon, the silicon nitride layer is removed by anisotropic plasma etching with the photo-resist layer as a mask. A mixture of tetra-fluoro-methane, argon, and nitrogen is used as an etching reactive material.

Abstract: A method of etching tantalum oxide layer in the fabrication of dynamic random access memory (DRAM). The method comprises the steps of forming the lower electrode structure of a capacitor on a semiconductor substrate. Then, a tantalum oxide layer, a barrier layer and a conductive layer are sequentially formed over the lower electrode structure and the substrate. Next, the conductive layer is patterned using a first reactive gas that includes a gaseous mixture of boron trichloride, chlorine and nitrogen (BCl.sub.3 /Cl.sub.2 /N.sub.2). Thereafter, the barrier layer is patterned using a second reactive gas that includes a gaseous mixture of boron trichloride, chlorine and nitrogen (BCl.sub.3 /Cl.sub.2 /N.sub.2). Finally, the tantalum oxide layer is patterned using a third reactive gas that includes a gaseous mixture of boron trichloride, chlorine and nitrogen (BCl.sub.3 /Cl.sub.2 /N.sub.2).

Abstract: An anti-clogging device for drain pipe includes: a cap member linked with an open-topped cylindrical container, whereby upon insertion of the cylindrical container into the drain pipe and upon covering of the cap member on a top opening of the drain pipe, the drain pipe can be well protected for preventing clogging by waste materials or scraps in a building construction site by means of the anti-clogging device.