Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a first region and a second region; forming a first bottom barrier metal (BBM) layer on the first region and the second region; forming a first work function metal layer on the first BBM layer on the first region and the second region; removing the first work function metal (WFM) layer and part of the first BBM layer on the second region; and forming a diffusion barrier layer on the first WFM layer on the first region and the first BBM layer on the second region.

Abstract: A method and system of providing a control user interface at a first home appliance are disclosed, the method including detecting presence of a user within a threshold range of the first home appliance, and performing image processing on one or more real-time images of the user to determine one or more characteristics of a facial image of the user; determining at least a first parameter that is configured to trigger a first change in a current control user interface configuration for the first home appliance; and activating a first control user interface configuration corresponding to the first parameter for the first home appliance while the presence of the first user continues to be detected within the threshold range of the first home appliance.

Abstract: A first dummy gate and a second dummy gate are formed on a substrate with a gap between the first and second dummy gates. The first dummy gate has a first sidewall. The second dummy gate has a second sidewall directly facing the first sidewall. A first sidewall spacer is disposed on the first sidewall. A second sidewall spacer is disposed on the second sidewall. A contact etch stop layer is deposited on the first and second dummy gates and on the first and second sidewall spacers. The contact etch stop layer is subjected to a tilt-angle plasma etching process to trim a corner portion of the contact etch stop layer. An inter-layer dielectric layer is then deposited on the contact etch stop layer and into the gap.

Abstract: An information handling system may comprise a liquid crystal display having a plurality of pixels, an electrochromic material layer having a plurality of electrodes disposed between an interior surface of a chassis and a transistor-array layer, and a high reflection layer reflecting light emitted from an LED disposed between the electrochromic material layer and the transistor-array layer away from the interior surface of the chassis. A processor may execute code instructions of an electrochromic material regional backlight unit dimming control system to identify a low-intensity pixel region including a subset of the plurality of pixels associated within high dynamic ratio image data with a low intensity value, identify an electrode of the electrochromic material layer associated with the low-intensity pixel region; and pass a current through the electrode such that a portion of the electrochromic material becomes opaque to the light reflected from the high reflection layer.

Abstract: A wireless terminal is disclosed. The wireless terminal includes a first antenna, a second antenna, a printed circuit board, a bracket, and a resonator. The first antenna is located at one side of the printed circuit board. The second antenna is located at another side of the printed circuit board. The printed circuit board functions as a metal ground of the first antenna and the second antenna. The resonator is located on the bracket. A ground point of the resonator is located on the printed circuit board. A clearance exists between the resonator and the printed circuit board.

Abstract: Provided are novel compounds of Formula (I): pharmaceutically acceptable salts thereof, and pharmaceutical compositions thereof, which are useful in the treatment of diseases and disorders mediated by ROR?. Also provided are pharmaceutical compositions comprising the novel compounds of Formula (I) and methods for their use in treating one or more inflammatory, metabolic, autoimmune and other diseases or disorders.

Abstract: Provided are novel compounds of Formula I: pharmaceutically acceptable salts thereof, and pharmaceutical compositions thereof, which are useful in the treatment of diseases and disorders mediated by RORy. Also provided are pharmaceutical compositions comprising the novel compounds of Formula I and methods for their use in treating one or more inflammatory, metabolic, autoimmune and other diseases or disorders.

Abstract: A system comprising a display, a display cover, a plurality of sensors disposed between the display and the display cover and a lighting control system coupled to the display and the plurality of sensors, the lighting control system configured to receive one or more signals from the plurality of sensors and to reduce a backlight level of a subgroup of lighting elements associated with the one or more sensors associated with the one or more signals, wherein the subgroup of lighting elements is one of a plurality of subgroups of lighting elements of the display.

Abstract: A paper straw has an inner tube, an outer tube, and a pattern portion. The inner tube and the outer tube are both tubular bodies formed by spirally winding paper sheets. The pattern portion is disposed between the inner tube and the outer tube. The paper sheets that are used to wind the inner tube and the outer tube have light-transmissive properties. Then the pattern portion can be externally displayed through the outer tube or the inner tube, and this can avoid the pattern portion directly contacting food or human body.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes first and second metal gates on a substrate with a gap therebetween. The first metal gate has a first sidewall, and the second metal gate has a second sidewall directly facing the first sidewall. A contact etch stop layer (CESL) is disposed within the gap and extends along the first and second sidewalls. The CESL has a first top portion adjacent to a top surface of the first metal gate and a second top portion adjacent to a top surface of the second metal gate. The first top portion and the second top portion have a trapezoid cross-sectional profile. A first sidewall spacer is disposed on the first sidewall and between the CESL and the first metal gate. A second sidewall spacer is disposed on the second sidewall and between the CESL and the second metal gate.

Abstract: A method of forming a semiconductor device includes depositing a flowable dielectric layer on a substrate and annealing the flowable dielectric layer. The method further includes performing a high temperature (HT) doping process on the flowable dielectric layer. The HT doping process may include implanting dopant ions into the flowable dielectric layer and heating the substrate during the implanting of the dopant ions. The heating of the substrate may include heating a substrate holder upon which the substrate is disposed and maintaining the substrate at a temperature above 100° C. An example benefit reduced the wet etch rate (WER) of the flowable dielectric layer.

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

Abstract: A structure of semiconductor device includes a gate structure, disposed on a substrate. A spacer is disposed on a sidewall of the gate structure, wherein the spacer is an l-like structure. A first doped region is disposed in the substrate at two sides of the gate structure. A second doped region is disposed in the substrate at the two sides of the gate structure, overlapping the first doped region. A silicide layer is disposed on the substrate within the second doped region, separating from the spacer by a distance. A dielectric layer covers over the second doped region and the gate structure with the spacer.

Abstract: Embodiment described herein provide a thermal treatment process following a high-pressure anneal process to keep hydrogen at an interface between a channel region and a gate dielectric layer in a field effect transistor while removing hydrogen from the bulk portion of the gate dielectric layer. The thermal treatment process can reduce the amount of threshold voltage shift caused by a high-pressure anneal. The high-pressure anneal and the thermal treatment process may be performed any time after formation of the gate dielectric layer, thus, causing no disruption to the existing process flow.

Abstract: A display panel includes a plurality of data lines and a multiplexer circuit including a first switch set and a second switch set each having a plurality of switches. Each switch of the switch sets has a first end connected to the data lines and a second end. The second ends of a same switch set are connected to each other to form a receiving end connected to a data signal source. The first switch set is turned on alternately by a first clock signal and a second clock signal. The second switch set is turned alternately by a third clock signal and a fourth clock signal. The enabling period of the first clock signal and that of the third clock signal partially overlap and have asynchronous starting times. The enabling period of the second clock signal and that of the fourth clock signal at least partially overlap.

Abstract: Provided are novel compounds of Formula I: pharmaceutically acceptable salts thereof, and pharmaceutical compositions thereof, which are useful in the treatment of diseases and disorders mediated by RORy. Also provided are pharmaceutical com-positions comprising the novel compounds of Formula I and methods for their use in treating one or more inflammatory, metabolic, autoimmune and other diseases or disorders.

Abstract: A method for controlling a fan in a fan start-up stage including a first time period and a second time period comprises the following steps of: during the first time period, continuously providing a first driving signal to drive the fan; and during the second time period, continuously providing a second driving signal to drive the fan; wherein, during the first time period the signal value (driving energy) of the first driving signal gradually decreases until being equal to the signal value of the second driving signal, and the signal value of the first driving signal is initially greater than the signal value of the second driving signal. A fan is also disclosed.

Abstract: A distributed storage system includes multiple partitions. A block received for storage is striped across the partitions if it meets predetermined criteria. Multiple tables are maintained for indexing the blocks and the subblocks of blocks that are partitioned. The tables for the subblocks and the tables for the corresponding blocks of the subblocks are updated to include metadata for the subblocks for retrieving the subblocks in response to a request for a corresponding stored block.

Abstract: Data is replicated between primary and secondary storage systems using a data pulling process or a log shipping process. If data is to be replicated through the log shipping process, a transaction and its associated data get stored in a transaction log in the secondary storage system. Subsequently, when the transaction gets executed, actual data gets persisted from the transaction log to a data log in the secondary storage system. If the data is to be replicated through the data pulling process, the transaction is stored in the transaction log. However, the associated data for the transaction is retrieved from the first primary storage system and stored directly in the data log in the secondary system.

Abstract: Provided are novel compounds of Formula I: pharmaceutically acceptable salts thereof, and pharmaceutical compositions thereof, which are useful in the treatment of diseases and disorders mediated by ROR?. Also provided are pharmaceutical compositions comprising the novel compounds of Formula I and methods for their use in treating one or more inflammatory, metabolic, autoimmune and other diseases or disorders.