Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a shallow trench isolation (STI) around the fin-shaped structure; forming a liner on the fin-shaped structure; and removing the liner and part of the fin-shaped structure so that a sidewall of the fin-shaped structure comprises a curve. Moreover, the method includes forming an epitaxial layer around the sidewall of the fin-shaped structure while a top surface of the fin-shaped structure is exposed.

Abstract: Embodiments of the present invention provide methods for optimizing a lithographic projection apparatus including optimizing projection optics therein. The current embodiments include several flows including optimizing a source, a mask, and the projection optics and various sequential and iterative optimization steps combining any of the projection optics, mask and source. The projection optics is sometimes broadly referred to as “lens”, and therefore the optimization process may be termed source mask lens optimization (SMLO). SMLO may be desirable over existing source mask optimization process (SMO) or other optimization processes that do not include projection optics optimization, partially because including the projection optics in the optimization may lead to a larger process window by introducing a plurality of adjustable characteristics of the projection optics.

Abstract: Provided are novel compounds of Formula (I): pharmaceutically acceptable salts thereof, and pharmaceutical compositions thereof, which are useful in the treatment of diseases and disorders mediated by ROR. Also provided are pharmaceutical compositions comprising the novel compounds of Formula (I) and methods for their use in treating one or more inflammatory, metabolic, autoimmune and other diseases or disorders.

Abstract: A method of forming a semiconductor device includes depositing a flowable dielectric layer on a substrate and annealing the flowable dielectric layer. The method further includes performing a high temperature (HT) doping process on the flowable dielectric layer. The HT doping process may include implanting dopant ions into the flowable dielectric layer and heating the substrate during the implanting of the dopant ions. The heating of the substrate may include heating a substrate holder upon which the substrate is disposed and maintaining the substrate at a temperature above 100° C. An example benefit reduced the wet etch rate (WER) of the flowable dielectric layer.

Abstract: A wireless terminal is disclosed. The wireless terminal includes a first antenna, a second antenna, a printed circuit board, a bracket, and a resonator, where the first antenna is located at one side of the printed circuit board, the second antenna is located at another side of the printed circuit board, the printed circuit board functions as a metal ground of the first antenna and the second antenna, the resonator is located on the bracket, a ground point of the resonator is located on the printed circuit board, and a clearance exists between the resonator and the printed circuit board, the bracket is plastic bracket.

Abstract: Disclosed is a salt of a quinoline derivative, polymorphic forms thereof, preparation methods thereof, a composition, and applications. The SPH1772 ditartrate or crystal form A thereof expresses the following excellent properties: high stability, great bioavailability, excellent pharmacokinetic properties, and better in vivo efficacy than SPH1772 free base.

Abstract: The present invention is directed to inhibitors of the interaction of menin with MLL and MLL fusion proteins, pharmaceutical compositions containing the same, and their use in the treatment of cancer and other diseases mediated by the menin-MLL interaction.

Abstract: A method for manufacturing metal product having irregular shapes includes steps of providing powder and binding agent, and mixing the powder and binding agent as a mixed feed. The mixed feed is heated to a plastic state, and injected into a mold cavity to form a plurality of blanks. The blanks are degreased to remove the binding agent and are sintered to form workpieces. A substrate or substrates and the workpieces form different parts of the metal product having irregular shapes. The workpieces are disposed on substrate to form a preform and the preform is bonded to form the metal products of irregular shape.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes first and second metal gates on a substrate with a gap therebetween. The first metal gate has a first sidewall, and the second metal gate has a second sidewall directly facing the first sidewall. A contact etch stop layer (CESL) is disposed within the gap and extends along the first and second sidewalls. The CESL has a first top portion adjacent to a top surface of the first metal gate and a second top portion adjacent to a top surface of the second metal gate. The first top portion and the second top portion have a trapezoid cross-sectional profile. A first sidewall spacer is disposed on the first sidewall and between the CESL and the first metal gate. A second sidewall spacer is disposed on the second sidewall and between the CESL and the second metal gate.

Abstract: Machine learning is used to control environmental systems for a building or other man-made structure. In one approach, environmental data is collected by sensors for an environment within the man-made structure. The environmental data is used as input to a machine learning model that predicts at least one attribute affecting control of the environment within the man-made structure. For example, the machine learning model might predict load on the environmental system, resource consumption by the environmental system, or cost of operating the environmental system. The environmental system for the man-made structure is controlled based on the predicted attribute.

Abstract: Machine learning is used to control environmental systems for a building or other man-made structure. In one approach, environmental data is collected by sensors for an environment within the man-made structure. The environmental data is used as input to a machine learning model that predicts at least one attribute affecting control of the environment within the man-made structure. For example, the machine learning model might predict load on the environmental system, resource consumption by the environmental system, or cost of operating the environmental system. The environmental system for the man-made structure is controlled based on the predicted attribute.

Abstract: A method for manufacturing hollow and other metal products of irregular shape provides metal powder and binding agent, and the two are feed-mixed and heated to a plastic state. The feed-mix is injected in a mold cavity of a first injection mold to form a first blank, and injected in a mold cavity of a second injection mold to form a second blank. The first blank and the second blank are welded together to form a built-up blank which is degreased to remove the binding agent therein. The degreased built-up blank is sintered to obtain the metal product of irregular shape.

Abstract: A search computing system receives an interaction history for one or more respective users describing interactions with one or more items and generates a co-interaction matrix, each value in the co-interaction matrix representing a number of common users determined to have had the interaction with an item of a corresponding row and an item of the corresponding column of the co-interaction matrix where the value is located. The search computing system generates an embeddings matrix comprising an item embedding value for each of the one or more items by applying matrix factorization to the co-interaction matrix and determines, in response to a search query of a particular user, a user embedding value for the searching user based on the interaction history for the searching user. The search computing system determines a similarity between each search result and user interaction history by comparing the user embedding value against each of the item embedding values.

Abstract: Provided are novel compounds of Formula I: pharmaceutically acceptable salts thereof, and pharmaceutical compositions thereof, which are useful in the treatment of diseases and disorders mediated by RORy. Also provided are pharmaceutical compositions comprising the novel compounds of Formula I and methods for their use in treating one or more inflammatory, metabolic, autoimmune and other diseases or disorders.