Patents by Inventor Yi-Hsuan Hsiao

Yi-Hsuan Hsiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210353793
    Abstract: A sterilization apparatus for a portable electronic device including a cabinet and a carrier is provided. The carrier includes a base slidably disposed on the cabinet, multiple first positioning elements and multiple second positioning elements disposed in parallel on the base, multiple sterilization light sources corresponding to the second positioning elements and multiple pressure sensors disposed in parallel in the base. The base is configured to carry at least one portable electronic device. One second positioning element is disposed between any two adjacent first positioning elements, and any first positioning element and any second positioning element adjacent to each other are separated by a positioning space. The pressure sensors are respectively located in the positioning spaces. One sterilization light source is disposed between any two adjacent pressure sensors, and the pressure sensors are configured to sense a pressure from the portable electronic device.
    Type: Application
    Filed: May 13, 2021
    Publication date: November 18, 2021
    Applicant: COMPAL ELECTRONICS, INC.
    Inventors: Yi-Hung Chen, Chih-Wen Chiang, Yun-Tung Pai, Yen-Hua Hsiao, Yao-Kuang Su, Yi-Hsuan Lin, Han-Sheng Siao
  • Publication number: 20210296181
    Abstract: The first and second fins extend upwardly from a semiconductor substrate. The shallow trench isolation structure laterally surrounds lower portions of the first and second fins. The first gate structure extends across an upper portion of the first fin. The second gate structure extends across an upper portion of the second fin. The first source/drain epitaxial structures are on the first fin and on opposite sides of the first gate structure. The second source/drain epitaxial structures are on the second fin and on opposite sides of the second gate structure. The separation plug interposes the first and second gate structures and extends along a lengthwise direction of the first fin. The isolation material cups an underside of a portion of the separation plug between one of the first source/drain epitaxial structures and one of the second source/drain epitaxial structures.
    Type: Application
    Filed: June 7, 2021
    Publication date: September 23, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Chang HUNG, Shu-Yuan KU, I-Wei YANG, Yi-Hsuan HSIAO, Ming-Ching CHANG, Ryan Chia-Jen CHEN
  • Patent number: 11099397
    Abstract: A virtual reality multi-sensory system includes an overhang rotatable multi-sensory device and a head-mounted multi-sensory device. The overhang rotatable multi-sensory device includes a fixed base, a control unit, a rotatable base, a driving device and a multi-sensory module having at least one selecting from the group consisting of a wind module, a hot air module, a heat module, and a liquid mist module. The head-mounted multi-sensory device includes a helmet, a display screen, earphones, a positioning module and an air flow guiding module. The present invention truly simulates image, sound effect, air flow, humidity, temperature, and smell of a specific environment, to stimulate the senses of sight, hearing, smell, and touch etc. of the user, thereby allowing the user to have an immersive experience in the simulated environment and avoiding increasing physical burden on the user's body.
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: August 24, 2021
    Assignee: TAINAN NATIONAL UNIVERSITY OF THE ARTS
    Inventors: Ping-Hsuan Han, Yang-Sheng Chen, Jui-Chun Hsiao, Yi-Ping Hung
  • Publication number: 20210193528
    Abstract: Metal gate cutting techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes receiving an integrated circuit (IC) device structure that includes a substrate, one or more fins disposed over the substrate, a plurality of gate structures disposed over the fins, a dielectric layer disposed between and adjacent to the gate structures, and a patterning layer disposed over the gate structures. The gate structures traverses the fins and includes first and second gate structures. The method further includes: forming an opening in the patterning layer to expose a portion of the first gate structure, a portion of the second gate structure, and a portion of the dielectric layer; and removing the exposed portion of the first gate structure, the exposed portion of the second gate structure, and the exposed portion of the dielectric layer.
    Type: Application
    Filed: March 8, 2021
    Publication date: June 24, 2021
    Inventors: Ya-Yi Tsai, Yi-Hsuan Hsiao, Shu-Yuan Ku, Ryan Chia-Jen Chen, Ming-Ching Chang
  • Patent number: 11031290
    Abstract: A semiconductor structure with cutting depth control and method for fabricating the same are provided. In the method for fabricating the semiconductor device, at first, fins protruding from a substrate are formed. Next, source/drain devices are grown on both ends of the fins. Then, an inter-layer dielectric layer crossing the fins and enclosing the source/drain devices is deposited. A metal gate structure enclosed by the inter-layer dielectric layer is formed between the source/drain devices. And then, a replacement operation is performed to replace a portion of the inter-layer dielectric layer with an isolation material, thereby forming an isolation portion that adjoins the metal gate structure and is located between the adjacent source/drain devices. Thereafter, a metal gate cut operation is performed, thereby forming an opening in the metal gate structure and an opening in the isolation portion, and an insulating material is deposited in the openings.
    Type: Grant
    Filed: January 21, 2018
    Date of Patent: June 8, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Chang Hung, Shu-Yuan Ku, I-Wei Yang, Yi-Hsuan Hsiao, Ming-Ching Chang, Ryan Chia-Jen Chen
  • Patent number: 10943828
    Abstract: Metal gate cutting techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes receiving an integrated circuit (IC) device structure that includes a substrate, one or more fins disposed over the substrate, a plurality of gate structures disposed over the fins, a dielectric layer disposed between and adjacent to the gate structures, and a patterning layer disposed over the gate structures. The gate structures traverses the fins and includes first and second gate structures. The method further includes: forming an opening in the patterning layer to expose a portion of the first gate structure, a portion of the second gate structure, and a portion of the dielectric layer; and removing the exposed portion of the first gate structure, the exposed portion of the second gate structure, and the exposed portion of the dielectric layer.
    Type: Grant
    Filed: October 28, 2019
    Date of Patent: March 9, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ya-Yi Tsai, Yi-Hsuan Hsiao, Shu-Yuan Ku, Ryan Chia-Jen Chen, Ming-Ching Chang
  • Publication number: 20210050350
    Abstract: Methods of cutting gate structures, and structures formed, are described. In an embodiment, a structure includes first and second gate structures over an active area, and a gate cut-fill structure. The first and second gate structures extend parallel. The active area includes a source/drain region disposed laterally between the first and second gate structures. The gate cut-fill structure has first and second primary portions and an intermediate portion. The first and second primary portions abut the first and second gate structures, respectively. The intermediate portion extends laterally between the first and second primary portions. First and second widths of the first and second primary portions along longitudinal midlines of the first and second gate structures, respectively, are each greater than a third width of the intermediate portion midway between the first and second gate structures and parallel to the longitudinal midline of the first gate structure.
    Type: Application
    Filed: October 30, 2020
    Publication date: February 18, 2021
    Inventors: Chih-Chang Hung, Chia-Jen Chen, Ming-Ching Chang, Shu-Yuan Ku, Yi-Hsuan Hsiao, I-Wei Yang
  • Patent number: 10884432
    Abstract: An aerial system includes an energy source arranged to power a propulsion unit to operate the system at a flight level, wherein the propulsion unit is in communications with a control device arranged to detect an aerodynamic interaction between the system and a surface proximate to the flight level and control the propulsion unit by use of the detected aerodynamic interaction.
    Type: Grant
    Filed: April 24, 2018
    Date of Patent: January 5, 2021
    Assignee: City University of Hong Kong
    Inventors: Yi-Hsuan Hsiao, Pakpong Chirarattananon
  • Patent number: 10867998
    Abstract: Methods of cutting gate structures, and structures formed, are described. In an embodiment, a structure includes first and second gate structures over an active area, and a gate cut-fill structure. The first and second gate structures extend parallel. The active area includes a source/drain region disposed laterally between the first and second gate structures. The gate cut-fill structure has first and second primary portions and an intermediate portion. The first and second primary portions abut the first and second gate structures, respectively. The intermediate portion extends laterally between the first and second primary portions. First and second widths of the first and second primary portions along longitudinal midlines of the first and second gate structures, respectively, are each greater than a third width of the intermediate portion midway between the first and second gate structures and parallel to the longitudinal midline of the first gate structure.
    Type: Grant
    Filed: January 2, 2018
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Chang Hung, Chia-Jen Chen, Ming-Ching Chang, Shu-Yuan Ku, Yi-Hsuan Hsiao, I-Wei Yang
  • Patent number: 10833077
    Abstract: Methods of cutting gate structures, and structures formed, are described. In an embodiment, a structure includes first and second gate structures over an active area, and a gate cut-fill structure. The first and second gate structures extend parallel. The active area includes a source/drain region disposed laterally between the first and second gate structures. The gate cut-fill structure has first and second primary portions and an intermediate portion. The first and second primary portions abut the first and second gate structures, respectively. The intermediate portion extends laterally between the first and second primary portions. First and second widths of the first and second primary portions along longitudinal midlines of the first and second gate structures, respectively, are each greater than a third width of the intermediate portion midway between the first and second gate structures and parallel to the longitudinal midline of the first gate structure.
    Type: Grant
    Filed: May 9, 2019
    Date of Patent: November 10, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Chang Hung, Chia-Jen Chen, Ming-Ching Chang, Shu-Yuan Ku, Yi-Hsuan Hsiao, I-Wei Yang
  • Publication number: 20200058557
    Abstract: Metal gate cutting techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes receiving an integrated circuit (IC) device structure that includes a substrate, one or more fins disposed over the substrate, a plurality of gate structures disposed over the fins, a dielectric layer disposed between and adjacent to the gate structures, and a patterning layer disposed over the gate structures. The gate structures traverses the fins and includes first and second gate structures. The method further includes: forming an opening in the patterning layer to expose a portion of the first gate structure, a portion of the second gate structure, and a portion of the dielectric layer; and removing the exposed portion of the first gate structure, the exposed portion of the second gate structure, and the exposed portion of the dielectric layer.
    Type: Application
    Filed: October 28, 2019
    Publication date: February 20, 2020
    Inventors: Ya-Yi Tsai, Yi-Hsuan Hsiao, Shu-Yuan Ku, Ryan Chia-Jen Chen, Ming-Ching Chang
  • Publication number: 20200052090
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first metal gate stack and a second metal gate stack over a semiconductor substrate. The semiconductor device structure also includes a dielectric layer surrounding the first metal gate stack and the second metal gate stack. The semiconductor device structure further includes an insulating structure between the first metal gate stack and the second metal gate stack. The insulating structure has a first convex surface facing towards the first metal gate stack.
    Type: Application
    Filed: October 22, 2019
    Publication date: February 13, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Hsuan HSIAO, Shu-Yuan KU, Chih-Chang HUNG, I-Wei YANG, Chih-Ming SUN
  • Patent number: 10461171
    Abstract: A method for forming a semiconductor device structure includes forming a first dummy gate stack and a second dummy gate stack over a semiconductor substrate and forming a dielectric layer over the semiconductor substrate to surround the first dummy gate stack and the second dummy gate stack. The method includes removing the first dummy gate stack and the second dummy gate stack to form a first trench and a second trench in the dielectric layer and removing the first dummy gate stack and the second dummy gate stack to form a first trench and a second trench in the dielectric layer. The method includes partially removing the first metal gate stack, the second metal gate stack, and the dielectric layer to form a recess. The method includes forming an insulating structure to partially or completely fill the recess.
    Type: Grant
    Filed: April 27, 2018
    Date of Patent: October 29, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Hsuan Hsiao, Shu-Yuan Ku, Chih-Chang Hung, I-Wei Yang, Chih-Ming Sun
  • Patent number: 10460994
    Abstract: Metal gate cutting techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes receiving an integrated circuit (IC) device structure that includes a substrate, one or more fins disposed over the substrate, a plurality of gate structures disposed over the fins, a dielectric layer disposed between and adjacent to the gate structures, and a patterning layer disposed over the gate structures. The gate structures traverses the fins and includes first and second gate structures. The method further includes: forming an opening in the patterning layer to expose a portion of the first gate structure, a portion of the second gate structure, and a portion of the dielectric layer; and removing the exposed portion of the first gate structure, the exposed portion of the second gate structure, and the exposed portion of the dielectric layer.
    Type: Grant
    Filed: March 28, 2018
    Date of Patent: October 29, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ya-Yi Tsai, Yi-Hsuan Hsiao, Shu-Yuan Ku, Ryan Chia-Jen Chen, Ming-Ching Chang
  • Publication number: 20190324477
    Abstract: An aerial system includes an energy source arranged to power a propulsion unit to operate the system at a flight level, wherein the propulsion unit is in communications with a control device arranged to detect an aerodynamic interaction between the system and a surface proximate to the flight level and control the propulsion unit by use of the detected aerodynamic interaction.
    Type: Application
    Filed: April 24, 2018
    Publication date: October 24, 2019
    Inventors: Yi-Hsuan Hsiao, Pakpong Chirarattananon
  • Publication number: 20190267374
    Abstract: Methods of cutting gate structures, and structures formed, are described. In an embodiment, a structure includes first and second gate structures over an active area, and a gate cut-fill structure. The first and second gate structures extend parallel. The active area includes a source/drain region disposed laterally between the first and second gate structures. The gate cut-fill structure has first and second primary portions and an intermediate portion. The first and second primary portions abut the first and second gate structures, respectively. The intermediate portion extends laterally between the first and second primary portions. First and second widths of the first and second primary portions along longitudinal midlines of the first and second gate structures, respectively, are each greater than a third width of the intermediate portion midway between the first and second gate structures and parallel to the longitudinal midline of the first gate structure.
    Type: Application
    Filed: May 9, 2019
    Publication date: August 29, 2019
    Inventors: Chih-Chang Hung, Chia-Jen Chen, Ming-Ching Chang, Shu-Yuan Ku, Yi-Hsuan Hsiao, I-Wei Yang
  • Publication number: 20190221653
    Abstract: A method for forming a semiconductor device structure includes forming a first dummy gate stack and a second dummy gate stack over a semiconductor substrate and forming a dielectric layer over the semiconductor substrate to surround the first dummy gate stack and the second dummy gate stack. The method includes removing the first dummy gate stack and the second dummy gate stack to form a first trench and a second trench in the dielectric layer and removing the first dummy gate stack and the second dummy gate stack to form a first trench and a second trench in the dielectric layer. The method includes partially removing the first metal gate stack, the second metal gate stack, and the dielectric layer to form a recess. The method includes forming an insulating structure to partially or completely fill the recess.
    Type: Application
    Filed: April 27, 2018
    Publication date: July 18, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yi-Hsuan HSIAO, Shu-Yuan KU, Chih-Chang HUNG, I-Wei YANG, Chih-Ming SUN
  • Publication number: 20190164839
    Abstract: Metal gate cutting techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes receiving an integrated circuit (IC) device structure that includes a substrate, one or more fins disposed over the substrate, a plurality of gate structures disposed over the fins, a dielectric layer disposed between and adjacent to the gate structures, and a patterning layer disposed over the gate structures. The gate structures traverses the fins and includes first and second gate structures. The method further includes: forming an opening in the patterning layer to expose a portion of the first gate structure, a portion of the second gate structure, and a portion of the dielectric layer; and removing the exposed portion of the first gate structure, the exposed portion of the second gate structure, and the exposed portion of the dielectric layer.
    Type: Application
    Filed: March 28, 2018
    Publication date: May 30, 2019
    Inventors: Ya-Yi Tsai, Yi-Hsuan Hsiao, Shu-Yuan Ku, Ryan Chia-Jen Chen, Ming-Ching Chang
  • Publication number: 20190164837
    Abstract: A semiconductor structure with cutting depth control and method for fabricating the same are provided. In the method for fabricating the semiconductor device, at first, fins protruding from a substrate are formed. Next, source/drain devices are grown on both ends of the fins. Then, an inter-layer dielectric layer crossing the fins and enclosing the source/drain devices is deposited. A metal gate structure enclosed by the inter-layer dielectric layer is formed between the source/drain devices. And then, a replacement operation is performed to replace a portion of the inter-layer dielectric layer with an isolation material, thereby forming an isolation portion that adjoins the metal gate structure and is located between the adjacent source/drain devices. Thereafter, a metal gate cut operation is performed, thereby forming an opening in the metal gate structure and an opening in the isolation portion, and an insulating material is deposited in the openings.
    Type: Application
    Filed: January 21, 2018
    Publication date: May 30, 2019
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Chang HUNG, Shu-Yuan KU, I-Wei YANG, Yi-Hsuan HSIAO, Ming-Ching CHANG, Ryan Chia-Jen CHEN
  • Patent number: 9536893
    Abstract: A three-dimensional (3D) memory and a method for manufacturing the same are disclosed. According to one embodiment, the 3D memory comprises a thin-film transistor. The thin-film transistor has a source region and a drain region disposed separately. The source region comprises a first source region and a second source region disposed between the first source region and the drain region. The first source region is p-type of doping, the second source region is n-type of doping, and the drain region is n-type of doping.
    Type: Grant
    Filed: November 14, 2014
    Date of Patent: January 3, 2017
    Assignee: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Yi-Hsuan Hsiao, Wei-Chen Chen