Patents by Inventor Yi-Hui LEE
Yi-Hui LEE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11927793Abstract: A double-sided display device includes a first panel, a second panel, a light guide plate and a light source. The second panel is arranged opposite to the first panel. The light guide plate is arranged between the first panel and the second panel, and includes a main body portion including a first surface and a second surface, a first pattern arranged on the first surface, and a second pattern arranged on the second surface. The light source is arranged adjacent to the light guide plate. The first pattern is different from the second pattern.Type: GrantFiled: February 28, 2023Date of Patent: March 12, 2024Assignee: INNOLUX CORPORATIONInventors: Yi-Hui Lee, Kuan-Chou Chen, Yung-Chih Cheng
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Publication number: 20240032439Abstract: A method of fabricating magnetoresistive random access memory, including providing a substrate, forming a bottom electrode layer, a magnetic tunnel junction stack, a top electrode layer and a hard mask layer sequentially on the substrate, wherein a material of the top electrode layer is titanium nitride, a material of the hard mask layer is tantalum or tantalum nitride, and a percentage of nitrogen in the titanium nitride gradually decreases from a top surface of top electrode layer to a bottom surface of top electrode layer, and patterning the bottom electrode layer, the magnetic tunnel junction stack, the top electrode layer and the hard mask layer into multiple magnetoresistive random access memory cells.Type: ApplicationFiled: September 27, 2023Publication date: January 25, 2024Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, JUN XIE
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Publication number: 20240027811Abstract: A display device, including a first display panel, a second display panel, and a first optical structure layer, is provided. The first display panel has a first display surface emitting light toward a first direction. The second display panel has a second display surface emitting light toward a second direction, wherein the first direction is different from the second direction. The first optical structure layer is disposed on the first display panel, wherein a glossiness of the first optical structure layer is between 4 GU and 35 GU, and a reflectivity of specular component included (SCI) of the first optical structure layer is between 3% and 6%. The display device provided by the disclosure can reduce the influence of ambient light from the outside on a displayed image.Type: ApplicationFiled: June 8, 2023Publication date: January 25, 2024Applicant: Innolux CorporationInventors: Yu-Chun Hsu, Wei-Ming Chu, Yi-Hui Lee, Yung-Chih Cheng, Kuan-Chou Chen, Sheng-Nan Fan
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Patent number: 11849648Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a first spacer on one side of the of the MTJ, a second spacer on another side of the MTJ, a first metal interconnection on the MTJ, and a liner adjacent to the first spacer, the second spacer, and the first metal interconnection. Preferably, each of a top surface of the MTJ and a bottom surface of the first metal interconnection includes a planar surface and two sidewalls of the first metal interconnection are aligned with two sidewalls of the MTJ.Type: GrantFiled: June 8, 2021Date of Patent: December 19, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
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Publication number: 20230380296Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.Type: ApplicationFiled: August 4, 2023Publication date: November 23, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chiu-Jung Chiu, Ya-Sheng Feng, I-Ming Tseng, Yi-An Shih, Yu-Chun Chen, Yi-Hui Lee, Chung-Liang Chu, Hsiu-Hao Hu
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Patent number: 11812669Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, a top electrode layer on the magnetic tunnel junction stack, and a hard mask layer on said top electrode layer, wherein the material of top electrode layer is titanium nitride, a material of said hard mask layer is tantalum or tantalum nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.Type: GrantFiled: June 9, 2022Date of Patent: November 7, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, Jun Xie
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Publication number: 20230314693Abstract: A double-sided display device includes a first panel, a second panel, a light guide plate and a light source. The second panel is arranged opposite to the first panel. The light guide plate is arranged between the first panel and the second panel, and includes a main body portion including a first surface and a second surface, a first pattern arranged on the first surface, and a second pattern arranged on the second surface. The light source is arranged adjacent to the light guide plate. The first pattern is different from the second pattern.Type: ApplicationFiled: February 28, 2023Publication date: October 5, 2023Inventors: Yi-Hui LEE, Kuan-Chou CHEN, Yung-Chih CHENG
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Patent number: 11765983Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.Type: GrantFiled: October 24, 2022Date of Patent: September 19, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chiu-Jung Chiu, Ya-Sheng Feng, I-Ming Tseng, Yi-An Shih, Yu-Chun Chen, Yi-Hui Lee, Chung-Liang Chu, Hsiu-Hao Hu
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Publication number: 20230238043Abstract: A semiconductor structure includes a substrate having a memory device region and a logic device region, a first dielectric layer on the substrate, a plurality of memory stack structures on the first dielectric layer on the memory device region, an insulating layer conformally covering the memory stack structures and the first dielectric layer, a second dielectric layer on the insulating layer and completely filling the spaces between the memory stack structures, and a first interconnecting structure formed in the second dielectric layer on the logic device region. A top surface of the first interconnecting structure is flush with a top surface of the second dielectric layer and higher than top surfaces of the memory stack structures.Type: ApplicationFiled: March 28, 2023Publication date: July 27, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Jing-Yin Jhang, Chien-Ting Lin
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Publication number: 20230220350Abstract: Accordingly. the present disclosure provides a population of genetically engineered mesenchymal stem cells (MSCs), comprising an expression vector comprising an Akt or HGF gene and a PD-L1 gene. Also provided is a method for synergistically increasing survival status and immunomodulatory ability of an MSC or enhancing proliferation of an MSC, comprising transfecting an MSC with an Akt or HGF gene and a PD-L1 gene and a method for preventing, ameliorating and/or treating an ischemia condition, enhancing neuroregeneration or reducing neuronal death, comprising administering an effective amount of a population of genetically engineered MSCs of the present disclosure to a subject in need thereof.Type: ApplicationFiled: September 27, 2020Publication date: July 13, 2023Inventors: Woei-Cherng SHYU, Chien-Lin CHEN, Yi-Hui LEE, Long-Bin JENG, Chang-Hai TSAI
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Patent number: 11646069Abstract: A method for forming a semiconductor structure is disclosed. A substrate having a logic device region and a memory device region is provided. A first dielectric layer is formed on the substrate. Plural memory stack structures are formed on the first dielectric layer on the memory device region. An insulating layer is formed and conformally covers the memory stack structures and the first dielectric layer. An etching back process is performed to remove a portion of the insulating layer without exposing any portion of the memory stack structures. After the etching back process, a second dielectric layer is formed on the insulating layer and completely fills the spaces between the memory stack structures.Type: GrantFiled: August 30, 2021Date of Patent: May 9, 2023Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Yu-Ping Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Jing-Yin Jhang, Chien-Ting Lin
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Publication number: 20230040932Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.Type: ApplicationFiled: October 24, 2022Publication date: February 9, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Chiu-Jung Chiu, Ya-Sheng Feng, I-Ming Tseng, Yi-An Shih, Yu-Chun Chen, Yi-Hui Lee, Chung-Liang Chu, Hsiu-Hao Hu
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Publication number: 20230038528Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.Type: ApplicationFiled: October 18, 2022Publication date: February 9, 2023Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
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Patent number: 11515471Abstract: A method for fabricating semiconductor device includes the steps of forming an inter-metal dielectric (IMD) layer on a substrate, forming a trench in the IMD layer, forming a synthetic antiferromagnetic (SAF) layer in the trench, forming a metal layer on the SAF layer, planarizing the metal layer and the SAF layer to form a metal interconnection, and forming a magnetic tunneling junction (MTJ) on the metal interconnection.Type: GrantFiled: August 9, 2020Date of Patent: November 29, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chiu-Jung Chiu, Ya-Sheng Feng, I-Ming Tseng, Yi-An Shih, Yu-Chun Chen, Yi-Hui Lee, Chung-Liang Chu, Hsiu-Hao Hu
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Patent number: 11508904Abstract: A method for fabricating semiconductor device includes the steps of: forming a first magnetic tunneling junction (MTJ) on a substrate; forming a first liner on the MTJ; forming a second liner on the first liner; forming an inter-metal dielectric (IMD) layer on the MTJ, and forming a metal interconnection in the IMD layer, the second liner, and the first liner to electrically connect the MTJ. Preferably, the first liner and the second liner are made of different materials.Type: GrantFiled: May 5, 2021Date of Patent: November 22, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
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Patent number: 11476410Abstract: A semiconductor device includes a substrate having a magnetic random access memory (MRAM) region and a logic region, a first metal interconnection on the MRAM region, a second metal interconnection on the logic region, a stop layer extending from the first metal interconnection to the second metal interconnection, and a magnetic tunneling junction (MTJ) on the first metal interconnection. Preferably, the stop layer on the first metal interconnection and the stop layer on the second metal interconnection have different thicknesses.Type: GrantFiled: August 19, 2020Date of Patent: October 18, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Yu-Chun Chen, Yen-Chun Liu, Ya-Sheng Feng, Chiu-Jung Chiu, I-Ming Tseng, Yi-An Shih, Yi-Hui Lee, Chung-Liang Chu, Hsiu-Hao Hu
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Publication number: 20220302374Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, a top electrode layer on the magnetic tunnel junction stack, and a hard mask layer on said top electrode layer, wherein the material of top electrode layer is titanium nitride, a material of said hard mask layer is tantalum or tantalum nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.Type: ApplicationFiled: June 9, 2022Publication date: September 22, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, JUN XIE
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Publication number: 20220238600Abstract: An MRAM structure includes a dielectric layer. A contact hole is disposed in the dielectric layer. A contact plug fills in the contact hole and protrudes out of the dielectric layer. The contact plug includes a lower portion and an upper portion. The lower portion fills in the contact hole. The upper portion is outside of the contact hole. The upper portion has a top side and a bottom side greater than the top side. The top side and the bottom side are parallel. The bottom side is closer to the contact hole than the top side. An MRAM is disposed on the contact hole and contacts the contact plug.Type: ApplicationFiled: April 11, 2022Publication date: July 28, 2022Applicant: UNITED MICROELECTRONICS CORP.Inventors: Yi-Hui Lee, I-Ming Tseng, Ying-Cheng Liu, Yi-An Shih, Yu-Ping Wang
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Patent number: 11387408Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.Type: GrantFiled: December 23, 2020Date of Patent: July 12, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Hui-Lin Wang, Chen-Yi Weng, Chin-Yang Hsieh, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, Jing-Yin Jhang, I-Ming Tseng, Yu-Ping Wang, Chien-Ting Lin, Kun-Chen Ho, Yi-Syun Chou, Chang-Min Li, Yi-Wei Tseng, Yu-Tsung Lai, Jun Xie
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Publication number: 20220029087Abstract: A semiconductor device includes a substrate having a magnetic random access memory (MRAM) region and a logic region, a first metal interconnection on the MRAM region, a second metal interconnection on the logic region, a stop layer extending from the first metal interconnection to the second metal interconnection, and a magnetic tunneling junction (MTJ) on the first metal interconnection. Preferably, the stop layer on the first metal interconnection and the stop layer on the second metal interconnection have different thicknesses.Type: ApplicationFiled: August 19, 2020Publication date: January 27, 2022Inventors: Yu-Chun Chen, Yen-Chun Liu, Ya-Sheng Feng, Chiu-Jung Chiu, I-Ming Tseng, Yi-An Shih, Yi-Hui Lee, Chung-Liang Chu, Hsiu-Hao Hu