Abstract: The present disclosure provides bispecific binding proteins and fragments thereof which bind to human CD137 and a tumor associated antigen (e.g., Claudin-6, Claudin 18.2, or Nectin-4), to polynucleotide sequences encoding these antibodies and to cells producing them. The disclosure further relates to therapeutic compositions comprising these antibodies, and to methods of their use for cancer detection, prognosis and antibody-based immunotherapy.

Abstract: An electronic component and a manufacturing method thereof are provided. The electronic component includes a structure member and a connecting member. The structure member includes at least one working unit. The at least one working unit is disposed in a first region. The connecting member is disposed on the structure member and includes a second region. The second region is overlapped with the first region, and a metal density of the second region is less than a metal density of the first region. The electronic component and the manufacturing method thereof of the embodiment of the disclosure include the effect of improving the reliability or quality of the electronic component.

Abstract: A power converter is provided. The power converter includes first to fourth switches electrically connected in series, a flying capacitor and a controller. Positive and negative terminals of the flying capacitor are electrically connected to the second and third switches respectively. The controller operates the first and fourth switches to perform a first complementary switching with a first dead time, and operates the second and third switches to perform a second complementary switching with a second dead time. The controller determines to regulate the first or second dead time by detecting a capacitor voltage of the flying capacitor, such that the capacitor voltage of the flying capacitor is maintained within a balance voltage range.

Abstract: A method and apparatus for minimizing silicon germanium facets in planar metal oxide semiconductor structures is disclosed. For example, a device fabricated according to the method may include a semiconductor substrate, a plurality of gate stacks formed on the substrate, a plurality of source/drain regions formed from silicon germanium, and a shallow trench isolation region positioned between two source/drain regions of the plurality of source/drain regions. Each source/drain region of the plurality of source/drain regions is positioned adjacent to at least one gate stack of the plurality of gate stacks. Moreover, the shallow trench isolation region forms a trench in the substrate without intersecting the two source/drain regions.

Abstract: A polymer, which is a composition of a battery, includes a polyester. The polyester is polymerized by at least two monomers, wherein each of the at least two monomers is selected from a group consisting of a carbonate ester and a polyol. The polyester can further include an end-capped polycarbonate ester, and the end-capped polycarbonate ester includes an inert group on an end thereof.

Abstract: A polymer has a degradability and includes a monomer. The monomer of the polymer includes a benzene derivative, a lactide and a caprolactone. A ratio of the benzene derivative in the polymer is smaller than a ratio of the lactide in the polymer. The ratio of the benzene derivative in the polymer is smaller than a ratio of the caprolactone in the polymer.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region and a second cell region and a diffusion region on the substrate extending through the first cell region and the second cell region. Preferably, the diffusion region includes a first H-shape and a second H-shape according to a top view.

Abstract: A multiple die container load port may include a housing with an opening, and an elevator to accommodate a plurality of different sized die containers. The multiple die container load port may include a stage supported by the housing and moveable within the opening of the housing by the elevator. The stage may include one or more positioning mechanisms to facilitate positioning of the plurality of different sized die containers on the stage, and may include different portions movable by the elevator to accommodate the plurality of different sized die containers. The multiple die container load port may include a position sensor to identify one of the plurality of different sized die containers positioned on the stage.

Abstract: The teaching equipment of an electromechanical system provided by the present invention is used to connect an emergency stop loop of electromechanical equipment, including a multi-stage key switch, an enabling switch and a safety control device. The multi-stage key switch is used to switch between a first mode and a second mode. The multi-stage key switch generates a switching signal during switching. The enabling switch is connected to the emergency stop loop. The safety control device is used to receive the switching signal. The safety control device includes a transient emergency stop circuit and a disconnection loop time. The safety control device triggers the emergency stop loop to enter the emergency stop state according to the switching signal. The emergency stop state includes that the transient emergency stop circuit interrupts the emergency stop loop until the disconnection loop time is up.

Abstract: Some implementations described herein provide an inductor device formed in a substrate of a semiconductor device including an integrated circuit device. The inductor device may use one or more conduction layers that are included in the substrate. Furthermore, the inductor device may be electrically coupled to the integrated circuit device. By forming the inductor device in the substrate of the semiconductor device, an electrical circuit including the inductor device and the integrated circuit device may be formed within a single semiconductor device.

Abstract: An electronic device, including an active device substrate, an insulation film, a vertical wire, and an anisotropic conductive adhesive, is provided. The active device substrate includes a substrate, a first wire, and a second wire. The first wire is configured on a first surface of the substrate, the second wire is configured on a second surface of the substrate, and a side surface connects the first surface to the second surface that is opposite to the first surface. The insulation film is configured on the side surface of the substrate. The vertical wire is configured on a surface of the insulation film and is located between the insulation film and the side surface of the substrate. The anisotropic conductive adhesive is configured between the vertical wire and the side surface of the substrate and electrically connects the vertical wire to the first wire and the second wire.

Abstract: A motor driver is provided. The motor driver includes an AC/DC converter, a DC/AC converter, a heat dissipation plate and a busbar module. The AC/DC converter converts an AC input power to a DC power and includes a first thermal module, a second thermal module, a first capacitor pack and a second capacitor pack. The DC/AC converter is connected with the AC/DC converter, converts the DC power to an AC output power, and includes a third thermal module. The heat dissipation plate includes an upper surface and a lower surface. The first thermal module is disposed on the upper surface. The second thermal module and the third thermal module are disposed on two opposite surfaces, respectively. The first capacitor pack is disposed on the upper surface. The second capacitor pack is disposed on the lower surface and corresponding to the first capacitor pack.

Abstract: A method forming a semiconductor package device includes: providing a substrate; forming a flip chip die on a first side on the substrate; and forming a molding compound on the first side of the substrate. The molding compound covers the flip chip die. The method further includes forming a heat sink on the molding compound; and forming a taping layer on a second side of the substrate, wherein the second side is opposite from the first side in a vertical direction. After forming the taping layer, the method further includes performing a pre-cut process and an etching process on the heat sink; and removing the taping layer.

Abstract: An electronic switch device and an electronic switch system are provided, wherein the electronic switch system includes: an electronic switch device, which includes: a sensing module, which includes: a pressure sensing module for providing a pressure sensing signal; and a touch control sensing module disposed on the pressure sensing module for providing a touch control sensing signal; and a comparator circuit coupled to the sensing module for receiving the pressure sensing signal.

Abstract: A display apparatus includes a wireless transmission unit and a display panel. The display panel includes a substrate, a plurality of pixel units and a signal line. The substrate includes a display region and a periphery region. The periphery region surrounds the display region. The pixel units are disposed on the display region. Each of the pixel units includes an active device and a pixel electrode. The active device is electrically connected to the pixel electrode. The signal line is on the periphery region. As viewed from a top view, the signal line has an annular shape having a gap and surrounds the display region.

Abstract: A method includes forming a transistor layer; forming a first metallization layer, including: forming first conductors, aligned along alpha tracks, and representing input pins of a cell region including first and second input pins; and cutting lengths of the first and second input pins to accommodate at most two access points, each aligned to a different one of first to fourth beta tracks, the beta tracks to which are aligned the access points of the first input pin being different than the beta tracks to which are aligned the access points of the second input pin; and forming a second metallization layer, including: forming second conductors representing routing segments and a representing a power grid segment aligned with one of the beta tracks of access points of the first input pin or the access points of the second input pin.

Abstract: Disclosed is an electronic device including a tunable element, a first power supply circuit, and a second power supply circuit. The first power supply circuit and the second power supply circuit are electrically connected to the tunable element. The first power supply circuit drives the tunable element during a first time period. The second power supply circuit drives the tunable element during a second time period.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer over a substrate and forming a dehydrated film over the photoresist layer. The photoresist layer is selectively exposed to actinic radiation to form an exposed portion and an unexposed portion of the photoresist layer. The photoresist layer is developed to remove the unexposed portion of the photoresist layer and a first portion of the dehydrated film over the unexposed portion of the photoresist layer. In an embodiment, the method includes etching the substrate by using the exposed portion of the photoresist layer as a mask.

Abstract: A layout pattern of a magnetoresistive random access memory (MRAM) includes a substrate having a first cell region and a second cell region and a diffusion region on the substrate extending through the first cell region and the second cell region. Preferably, the diffusion region includes a first H-shape and a second H-shape according to a top view.

Abstract: A memory chip includes a first decoding device and a memory device. The first decoding device is configured to generate multiple word line signals. The memory device is configured to generate a third data signal based on a first data signal and a second data signal. The memory device includes a first memory circuit and a second memory circuit. The first memory circuit is configured to generate the first data signal at a first node according to the word line signals during a first period. The second memory circuit is configured to generate the second data signal at a second node different from the first node according to the word line signals during a second period after the first period. A method of operating a memory chip is also disclosed herein.