Abstract: An electronic device is provided. The electronic device includes at least one electronic circuit, a scan line, and a scan signal conversion circuit. The scan line transmits a first scan signal. The scan signal conversion circuit is electrically connected to the at least one electronic circuit and the scan line. The scan signal conversion circuit receives the first scan signal, converts the first scan signal into a second scan signal, and provides the second scan signal to the at least one electronic circuit.

Abstract: An electronic device including a circuit layer, an electronic element, a first flow-path structure and a fluid material is disclosed. The electronic element is disposed on the circuit layer and electrically connected to the circuit layer. The first flow-path structure includes a first flow path, and the electronic element is disposed in the first flow-path structure. The fluid material is disposed in the first flow path. The fluid material is used for performing heat exchange with the electronic element. The circuit layer includes an input hole and an output hole, and the fluid material enters the first flow path through the input hole and exits the first flow path through the output hole.

Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes an upper surface; a plurality of exposed regions, formed in the semiconductor stack and exposing the upper surface; a lower protective layer, covering the exposed regions and the second semiconductor layer; a first reflective structure, formed on the second semiconductor layer and including a plurality of first openings on the second semiconductor layer; a second reflective structure, formed on the first reflective structure and electrically connected to the second semiconductor layer through the plurality of first openings; and an upper protective layer, formed on the second reflective structure; wherein the upper protective layer contacts and overlaps the lower protective layer on the exposed regions; wherein the first reflective structure and the

Abstract: An infrared sensor uses an infrared lens with infrared filtering and focusing functions. Thus, an infrared filter can be omitted to reduce the costs and volume. In addition, a getter on the inside of a metal cover of the infrared sensor can be activated when the metal cover is soldered to the substrate of the infrared sensor. Therefore, the packaging process of the infrared sensor can be simplified.

Abstract: The disclosure provides an electrical apparatus, including a substrate, a plurality of gate driver units and a plurality of gate lines. The gate driver units are disposed on the substrate. The gate lines are disposed on the substrate. Each of the gate lines is respectively electrically connected to the corresponding gate driver unit. Each of the gate lines is configured to transmit a respective gate signal. The gate lines include a first gate line and a second gate line. The first gate line and the second gate line are configured to transmit the respective gate signals at a same time.

Abstract: The present disclosure provides a package device and a manufacturing method thereof. The package device includes an electronic device, a conductive pad having a first bottom surface, and a redistribution layer disposed between the conductive pad and the electronic device. The redistribution layer has a second bottom surface, and the conductive pad is electrically connected to the electronic device through the redistribution layer. The first bottom surface is closer to the electronic device than the second bottom in a normal direction of the electronic device.

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,

Abstract: An electronic device is disclosed. The electronic device includes a circuit layer, an electronic element and a thermal conducting element. The electronic element is disposed on the circuit layer and electrically connected to the circuit layer. The thermal conducting element is disposed between the circuit layer and the electronic element. The thermal conducting element is used for performing heat exchange with the electronic element.

Abstract: An electronic component includes a first electronic unit including a plurality of pads, a first conductive layer, a second conductive layer, a first insulating layer having a first thickness, a second insulating layer having a second thickness, a second electronic unit, and a solder ball. The first conductive layer is disposed between the first electronic unit and the second conductive layer, and electrically connected to at least one of the pads through a conductive via. The first insulating layer is disposed between the first conductive layer and the second conductive layer. The second conductive layer is disposed between the first insulating layer and the second insulating layer. The first thickness is different from the second thickness. The second conductive layer is disposed between the first conductive layer and the second electronic unit. The second conductive layer is electrically connected to the second electronic unit through the solder ball.

Abstract: The present disclosure provides an electronic device including a redistribution layer, a plurality of passive components, and an electronic component. The redistribution layer includes a first insulating layer, a second insulating layer, and a plurality of traces electrically connected to each other through a first opening of the first insulating layer and a second opening of the second insulating layer, wherein the first insulating layer has a first side away from the second insulating layer, and the second insulating layer has a second side away from the first insulating layer. The passive components are disposed on the first side. The electronic component is disposed on the second side. The plurality of passive components are electrically connected to the electronic component through the plurality of traces.

Abstract: A circuit structure is provided. The circuit structure includes an insulating layer, a conductive pad and a solder pad. The insulating layer has a first surface and a second surface opposite to the first surface. The conductive pad is disposed on the first surface of the insulating layer. The solder pad is disposed on the second surface of the insulating layer. The solder pad is coupled to the conductive pad. The insulating layer has a recess region on the second surface.

Abstract: An electronic device includes a wafer, a redistribution layer and a multi-layer insulating structure. The redistribution layer is disposed on the wafer. The multi-layer insulating structure is disposed between the wafer and the redistribution layer. The multi-layer insulating structure includes a first layer and a second layer. A Young's modulus of the first layer is different from a Young's modulus of the second layer.

Abstract: An electronic device is provided. The electronic device includes a substrate and a plurality of units disposed on the substrate. A portion of the plurality of units includes a conductive layer and an insulating layer. The conductive layer has a first opening penetrating through the conductive layer. The insulating layer is disposed on the conductive layer and includes a second opening penetrating through the insulating layer. The first opening of the conductive layer and the second opening of the insulating layer are at least partially overlapped. Moreover, a width of the first opening of the conductive layer is greater than a width of the second opening of the insulating layer.

Abstract: An antenna device with an active area and a buffer element connected with the active area is provided, which includes a first substrate, and a second substrate facing and spaced with the first substrate in a distance. A plurality of electrodes are disposed on the first substrate and in the active area. A modulation material is filled in the active area. A conductive layer is disposed on the second substrate and in the active area and the buffer element, and comprises a plurality of slits in the active area. A plurality of spacers are disposed between the first substrate and the second substrate, wherein at least one of the plurality of spacers is located in the buffer element, and wherein the buffer element is configured to provide a space for adjusting the amount of the modulation material in the active area.

Abstract: A manufacturing method of an electronic device is provided. The manufacturing method of the electronic device includes following steps: providing a substrate; bonding an electronic component to the substrate, wherein the electronic component is mainly driven by a reverse bias in an operating mode, and the electronic component is electrically connected in series with another electronic component; applying a forward bias to the electronic component, and determining whether the electronic component is normal or failed based on a light emitted by the another electronic component or thermal characteristics of the electronic component; and transporting the substrate configured with the electronic component determined to be normal to a next production site or repairing the electronic component determined to be failed.

Abstract: An electronic component and a manufacturing method thereof are provided. The electronic component includes a structure member and a connecting member. The structure member includes at least one working unit. The at least one working unit is disposed in a first region. The connecting member is disposed on the structure member and includes a second region. The second region is overlapped with the first region, and a metal density of the second region is less than a metal density of the first region. The electronic component and the manufacturing method thereof of the embodiment of the disclosure include the effect of improving the reliability or quality of the electronic component.

Abstract: A circuit structure and a fabrication method thereof are provided. The fabrication method of the circuit structure includes the following steps: providing a substrate; fabricating a test circuit component on the substrate; fabricating a solder pad on the test circuit component; fabricating an insulating layer; and fabricating a conductive pad on the insulating layer. A second surface of the insulating layer covers the test circuit component and the solder pad. The conductive pad is coupled to the solder pad. Through the fabrication method of the circuit structure provided by the disclosure, circuit quality of the circuit structure may be monitored, and that reliability of the circuit structure provided by the disclosure is improved.

Abstract: A manufacturing method of a package structure including the following steps is provided. A carrier is provided. An anti-warpage structure is formed on the carrier. And a redistribution layer is formed on the carrier. In the normal direction of the carrier, a warpage trend of the anti-warpage structure is opposite to a warpage trend of the redistribution layer.

Abstract: An electronic device with short frame time length is provided. The electronic device includes a substrate, a plurality of first signal lines, a plurality of second signal lines, and two first integrated circuits. The plurality of first signal lines are disposed on the substrate. The plurality of first signal lines are divided into a first group of signal lines and a second group of signal lines. The plurality of second signal lines are disposed on the substrate. The plurality of second signal lines are disposed alternately with the plurality of first signal lines. The two first integrated circuits are bonded on the substrate. Each of the two first integrated circuits are electrically connected to the first group of signal lines and the second group of signal lines. The first group of signal lines and the second group of signal lines are disposed alternately in columns.