Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and is located between the first semiconductor structure and the second semiconductor structure. One of the plurality of semiconductor pairs has a barrier layer and a well layer and includes the first dopant. The barrier layer has a first thickness and a first Al content, and the well layer has a second thickness and a second Al content, the second thickness is less than the first thickness, and the second Al content is less than the first Al content.

Abstract: An optical element driving mechanism includes a fixed portion, a movable portion, a driving assembly, and a circuit assembly. The movable portion is connected to the optical element and is movable relative to the fixed portion. The driving assembly drives the movable portion to move relative to the fixed portion. The circuit assembly is connected to the driving assembly. The driving assembly is electrically connected to an external circuit via the circuit assembly.

Abstract: A micro LED display panel includes a display area, a plurality of micro light-emitting elements and a plurality of micro control elements. The plurality of micro light-emitting elements is disposed in the display area and include a plurality of first color micro LEDs and a plurality of second color micro LEDs. A light wavelength of each of the first color micro LEDs is different from a light wavelength of each of the second color micro LEDs. The plurality of micro control elements is disposed in the display area, and include a plurality of first color micro circuit-chips and a plurality of second color micro circuit-chips. The plurality of first color micro circuit-chips control the plurality of first color micro LEDs, and the plurality of second color micro circuit-chips control the plurality of second color micro LEDs.

Abstract: A micro light-emitting device module includes a circuit substrate, a planarization layer and a micro light-emitting device. The planarization layer is disposed on an upper surface of the circuit substrate and has a first surface and a second surface opposite to each other. The second surface is in contact with the upper surface of the circuit substrate. The micro light-emitting device is disposed on the first surface of the planarization layer. A maximum height difference of the second surface of the planarization layer is greater than a thickness of the micro light-emitting device.

Abstract: An electromagnetic wave adjusting device includes a first substrate, a first conductive element, a first insulation layer, a second substrate, a second conductive element, a dielectric layer, and a conductive layer. The first conductive element is disposed on the first substrate. The first insulation layer is disposed on the first conductive element. The second conductive element is disposed on the second substrate. The dielectric layer is disposed between the first substrate and the second substrate. The first conductive layer is disposed on the first insulation layer and electrically connected to the first conductive element. The electromagnetic wave adjusting device includes an overlap area and a capacitance adjustable area. An overlap portion of the first conductive element and the second conductive element constitutes the overlap area, the capacitance adjustable area includes the overlap area, and at least part of the first conductive layer is disposed in the capacitance adjustable area.

Abstract: An electronic device including a pair of substrates, a sealant, and a heating unit is provided. Each of the pair of substrates includes a peripheral area and an active area, and each of the peripheral areas are adjacent to an edge of a corresponding one of the pair of substrates. The sealant is disposed between the pair of substrates. The heating unit is disposed on one of the pair of substrates and comprising a first portion disposed in the peripheral area of the one of the pair of substrates and adjacent to an edge of the one of the pair of substrates, a third portion disposed in the active area, and a second portion connecting the first portion and the third portion. The resistance of the first portion is less than a resistance of the third portion. Therefore, the electronic device may have improved heating efficiency.

Abstract: An antenna device is provided, including a first substrate, a first conductive element, a second substrate, a second conductive element, and an insulating layer. The first conductive element is disposed on the first substrate to define, on the first substrate, a recessed region adjacent to the first conductive element. The second substrate faces the first substrate. The second conductive element is disposed on the second substrate and located between the first substrate and the second substrate. The insulating layer is disposed between the first substrate and the second substrate. In a top view of the antenna device, the second conductive element overlaps the first conductive element and the recessed region, and the insulating layer at least partially overlaps the recessed region.

Abstract: The disclosure provides an electronic apparatus and a manufacturing method thereof. The electronic apparatus includes a first insulating layer, a first metal layer, a second metal layer, and an electronic assembly. The first insulating layer includes a first surface and a second surface opposite to the first surface. The first metal layer has an opening and is formed on the first surface. The second metal layer is formed on the second surface and a projection of the opening on the second surface is overlapped with a projection of the second metal layer on the second surface. The electronic assembly is electrically connected with the first metal layer and the second metal layer.

Abstract: The present disclosure provides a package structure including a redistribution layer and a die. The redistribution layer includes a switch circuit portion and a redistribution portion, the switch circuit portion includes a transistor, and the redistribution portion is adjacent to the switch circuit portion. The die overlaps the redistribution portion, wherein the transistor is electrically connected to the die.

Abstract: A method for manufacturing a liquid-crystal antenna device is provided. The method includes step (a) providing a first mother substrate. The first mother substrate includes a first region and a second region. The first region has a plurality of first sides. An extension line of at least one of the first sides divides the second region into a first part and a second part. The method also includes the following steps: (b) forming a first electrode layer on the first region and the second region, and (c) cutting the first mother substrate along the first sides of the first region.

Abstract: The present disclosure provides a package device including a conductive pad, a protecting block, and a redistribution layer. The protecting block is disposed on the conductive pad. The redistribution layer is disposed on the protecting block, and the conductive pad is electrically connected to the redistribution layer through the protecting block.

Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.

Abstract: An example semiconductor wafer includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, and a layer of the metal disposed on the dielectric layer. An example method of determining an effective work function of a metal on the semiconductor wafer includes determining a surface barrier voltage of the semiconductor wafer, and determining a metal effective work function of the semiconductor wafer based, at least in part, on the surface barrier voltage.

Abstract: A latch mechanism includes a first and second latch body. The first and second latch body respectively includes a first and second base, a first and second latch portion and a first and second acting portion. The first latch body disposes through the second base. The second acting portion is pivoted to the second base. The second latch portion is disposed on the rotational path and limited to the first latch portion. The second acting portion includes a first and a second pushing structure. When the second acting portion is rotated along the rotational path, the second latch portion is pushed by the first pushing structure such that the second latch portion is disengaged from the first latch portion, and then the first acting portion is pushed by the second pushing structure such that the first latch body is disengaged from the second latch body in a releasing direction.

Abstract: A microwave device includes a first substrate having a first surface, a first metal layer, a second substrate having a second surface corresponding to the first substrate, a second metal layer, a sealing element, a modulation material, and a fill material. The first metal layer is disposed on the first surface, and the first metal layer includes openings. The second metal layer is disposed on the second surface. The second metal layer includes electrodes corresponding to the openings. The sealing element is located between the first substrate and the second substrate. An active zone is formed by a space between the sealing element, the first substrate, and the second substrate. The modulation material is filled within the active area. The fill material is disposed in the active area. The thickness of the fill material is greater than 0.3 ?m, and less than the thickness of the sealing element.

Abstract: A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.

Abstract: An antenna device is provided. The antenna device includes a first substrate, a first conductive layer, a first insulating structure, a second substrate, a second conductive layer and a liquid-crystal layer. The first conductive layer is disposed on the first substrate. The first insulating structure is disposed on the first conductive layer, and the first insulating structure includes a first region and a second region. The second substrate is disposed opposite to the first substrate. The second conductive layer is disposed on the second substrate. The liquid-crystal layer is disposed between the first conductive layer and the second conductive layer. The thickness of the first region is less than the thickness of the second region, and at least a portion of the first region is disposed in an overlapping region of the first conductive layer and the second conductive layer.