Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,

Abstract: A manufacturing method of a metal structure is disclosed, which includes the following steps: forming a seed layer on a substrate; forming a patterned metal layer on the seed layer, wherein the patterned metal layer includes a metal member; forming a first patterned photoresist layer on the seed layer, wherein a thickness of the first patterned photoresist layer is less than a thickness of the patterned metal layer; and performing a first patterning process to the seed layer through the first patterned photoresist layer to form a patterned seed layer, wherein after the first patterning process, the metal member includes a first part and a second part, the first part is disposed between the patterned seed layer and the second part, and a width of the first part is greater than a width of the second part.

Abstract: An electronic device and a method for manufacturing the same are provided. The electronic device includes: a first insulating layer; a first metal bump disposed on the first insulating layer; and a second insulating layer disposed on the first metal bump, wherein the second insulating layer includes a first opening exposing a portion of the first metal bump, wherein a thickness of the first insulating layer is greater than a thickness of the second insulating layer.

Abstract: A method for manufacturing a liquid-crystal antenna device is provided. The method includes step (a) providing a first mother substrate. The first mother substrate includes a first region and a second region. The first region has a plurality of first sides. An extension line of at least one of the first sides divides the second region into a first part and a second part. The method also includes the following steps: (b) forming a first electrode layer on the first region and the second region, and (c) cutting the first mother substrate along the first sides of the first region.

Abstract: An electronic device includes a substrate, a driving element, a conductive layer, and an electronic element is provided. The driving element is disposed on the substrate. The conductive layer is disposed on the substrate, wherein there is a first distance (B) between the driving element and an edge of the conductive layer. The electronic element is disposed on the conductive layer and is electrically connected to the driving element, wherein there is a second distance (A) between the electronic element and the edge of the conductive layer, and the first distance (B) is greater than the second distance (A).

Abstract: Disclosed is an electronic device including a tunable element, a first power supply circuit, and a second power supply circuit. The first power supply circuit and the second power supply circuit are electrically connected to the tunable element. The first power supply circuit drives the tunable element during a first time period. The second power supply circuit drives the tunable element during a second time period.

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,

Abstract: An electronic component and a manufacturing method thereof are provided. The electronic component includes a structure member and a connecting member. The structure member includes at least one working unit. The at least one working unit is disposed in a first region. The connecting member is disposed on the structure member and includes a second region. The second region is overlapped with the first region, and a metal density of the second region is less than a metal density of the first region. The electronic component and the manufacturing method thereof of the embodiment of the disclosure include the effect of improving the reliability or quality of the electronic component.

Abstract: A package device is provided and includes a first circuit layer, a first isolation layer, and a first de-warpage layer. The first circuit layer and the first isolation layer are stacked on each other. At least a portion of the first de-warpage layer is disposed between the first circuit layer and the first isolation layer.

Abstract: The present disclosure provides a package device and a manufacturing method thereof. The package device includes an electronic device, a conductive pad having a first bottom surface, and a redistribution layer disposed between the conductive pad and the electronic device. The redistribution layer has a second bottom surface, and the conductive pad is electrically connected to the electronic device through the redistribution layer. The first bottom surface is closer to the electronic device than the second bottom in a normal direction of the electronic device.

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

Abstract: A liquid detection device and a method for manufacturing the same are provided. The liquid detection device includes: a substrate; a working electrode disposed on the substrate, wherein the working electrode includes a first metal portion and a first sensing portion, and the first sensing portion is disposed on the first metal portion; and a reference electrode disposed on the substrate.

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer and a second semiconductor layer, wherein in a top view, the semiconductor stack comprises an outer peripheral region and an inner region, the outer peripheral region exposes the first semiconductor layer, and the second semiconductor layer is disposed in the inner region; an outer insulated structure comprising an insulation layer and a protective layer, the insulation layer comprising a plurality of first insulation layer outer openings and a second insulation layer opening; a first electrode covering the plurality of first insulation layer outer openings; and a second electrode covering the second insulation layer opening, wherein the outer insulated structure comprises a total thickness gradually decreasing from the outer peripheral region to the inner region.

Abstract: A manufacturing method of an electronic device is provided. The manufacturing method of the electronic device includes following steps: providing a substrate; bonding at least one electronic component to the substrate, wherein the at least one electronic component is mainly driven by a reverse bias in an operating mode; applying a forward bias to the at least one electronic component, and determining whether the at least one electronic component is normal or failed; and transporting the substrate configured with the at least one electronic component determined to be normal to a next production site or repairing the at least one electronic component determined to be failed.

Abstract: The present disclosure provides a package device including a conductive pad, a protecting block, and a redistribution layer. The protecting block is disposed on the conductive pad. The redistribution layer is disposed on the protecting block, and the conductive pad is electrically connected to the redistribution layer through the protecting block.

Abstract: The disclosure provides an electronic apparatus. The electronic apparatus includes a substrate, a first metal layer, an insulating layer, a first conductor, an electronic assembly and a transistor circuit die. The first metal layer is disposed on the substrate. The insulating layer is disposed on the substrate. The first conductor is formed in a first via of the insulating layer. The electronic assembly is disposed on the substrate and electrically connected to the first metal layer through the first conductor. The transistor circuit die is electrically connected to the first metal layer.

Abstract: The disclosure provides an electromagnetic wave adjustment apparatus includes a control circuit, a transistor circuit die and an electronic assembly. The transistor circuit die receives a control signal from the control circuit and drives the electronic assembly.

Abstract: An infrared sensor uses an infrared lens with infrared filtering and focusing functions. Thus, an infrared filter can be omitted to reduce the costs and volume. In addition, a getter on the inside of a metal cover of the infrared sensor can be activated when the metal cover is soldered to the substrate of the infrared sensor. Therefore, the packaging process of the infrared sensor can be simplified.