Abstract: A method of preparing a semiconductor substrate with metal bumps on both sides of the substrate includes depositing a first-side UBM layer on a first surface of the substrate, and forming a plurality of first-side metal bumps on the first surface of the substrate after the first-side UBM layer is deposited. The method includes forming a second-side UBM layer on a second side of the substrate, and the first surface and the second surface are opposite of each other. The method includes forming a plurality of second-side metal bumps on the second surface of the substrate after the second-side UBM layer is deposited. The method includes removing exposed first-side UBM layer and exposed second-side UBM layer after the plurality of first-side metal bumps and the plurality of second-side metal bumps are formed. The method includes reflowing the plurality of first-side metal bumps and the plurality of second side metal bumps.

Abstract: A semiconductor device includes a semiconductor substrate, a pad region on the semiconductor substrate, a passivation layer over the semiconductor substrate and at least a portion of the pad region, and a bump structure overlying the pad region. The passivation layer has an opening defined therein to expose at least another portion of the pad region. The bump structure is electrically connected to the pad region via the opening. The bump structure includes a copper layer and a SnAg layer overlying the copper layer. The SnAg layer has a melting temperature higher than the eutectic temperature of Sn and Ag.

Abstract: The mechanisms for forming metal bumps to connect to a cooling device (or a heat sink) described herein enable substrates with devices to dissipate heat generated more efficiently. In addition, the metal bumps allow customization of bump designs to meet the needs of different chips. Further, the usage of metal bumps between the semiconductor chip and cooling device enables advanced cooling by passing a cooling fluid between the bumps.

Abstract: Semiconductor devices, packaging methods and structures are disclosed. In one embodiment, a semiconductor device includes an integrated circuit die with a surface having a peripheral region and a central region. A plurality of bumps is disposed on the surface of the integrated circuit die in the peripheral region. A spacer is disposed on the surface of the integrated circuit die in the central region.

Abstract: A semiconductor device includes a semiconductor substrate, a pad region on the semiconductor substrate, a passivation layer over the semiconductor substrate and at least a portion of the pad region, and a bump structure overlying the pad region. The passivation layer has an opening defined therein to expose at least another portion of the pad region. The bump structure is electrically connected to the pad region via the opening. The bump structure includes a copper layer and a SnAg layer overlying the copper layer. The SnAg layer has a melting temperature higher than the eutectic temperature of Sn and Ag.

Abstract: A semiconductor device includes a bump structure over a pad region. The bump structure includes a copper layer and a lead-free solder layer over the copper layer. The lead-free solder layer is a SnAg layer, and the Ag content in the SnAg layer is less than 1.6 weight percent.

Abstract: In accordance with an embodiment, a probe card comprises a contact pad interface comprising front side contacts and back side contacts electrically coupled together. The front side contacts are arranged to simultaneously electrically couple respective bumps of a plurality of dies on a wafer, and the back side contacts are arranged to electrically couple respective contacts of a testing structure.

Abstract: A semiconductor device utilizing die edge contacts is provided. An integrated circuit die has a post-passivation layer with a trench filled with a conductive material extending from a contact to a die edge, thereby forming a die edge contact. Optionally, a through substrate via may be positioned along the die edge such that the conductive material in the trench is electrically coupled to the through-substrate via, thereby forming a larger die edge contact. The integrated circuit die may be placed in a multi-die package wherein the multi-die package includes walls having a major surface perpendicular to a major surface of the integrated circuit die. The die edge contacts are electrically coupled to contacts on the walls of the multi-die package. The multi-die package may include edge contacts for connecting to another substrate, such as a printed circuit board, a packaging substrate, a high-density interconnect, or the like.

Abstract: In accordance with an embodiment, a probe card comprises a contact pad interface comprising front side contacts and back side contacts electrically coupled together. The front side contacts are arranged to simultaneously electrically couple respective bumps of a plurality of dies on a wafer, and the back side contacts are arranged to electrically couple respective contacts of a testing structure.

Abstract: A semiconductor device utilizing die edge contacts is provided. An integrated circuit die has a post-passivation layer with a trench filled with a conductive material extending from a contact to a die edge, thereby forming a die edge contact. Optionally, a through substrate via may be positioned along the die edge such that the conductive material in the trench is electrically coupled to the through-substrate via, thereby forming a larger die edge contact. The integrated circuit die may be placed in a multi-die package wherein the multi-die package includes walls having a major surface perpendicular to a major surface of the integrated circuit die. The die edge contacts are electrically coupled to contacts on the walls of the multi-die package. The multi-die package may include edge contacts for connecting to another substrate, such as a printed circuit board, a packaging substrate, a high-density interconnect, or the like.

Abstract: Semiconductor devices, packaging methods and structures are disclosed. In one embodiment, a semiconductor device includes an integrated circuit die with a surface having a peripheral region and a central region. A plurality of bumps is disposed on the surface of the integrated circuit die in the peripheral region. A spacer is disposed on the surface of the integrated circuit die in the central region.

Abstract: The mechanisms for forming metal bumps to connect to a cooling device (or a heat sink) described herein enable substrates with devices to dissipate heat generated more efficiently. In addition, the metal bumps allow customization of bump designs to meet the needs of different chips. Further, the usage of metal bumps between the semiconductor chip and cooling device enables advanced cooling by passing a cooling fluid between the bumps.

Abstract: A semiconductor device utilizing die edge contacts is provided. An integrated circuit die has a post-passivation layer with a trench filled with a conductive material extending from a contact to a die edge, thereby forming a die edge contact. Optionally, a through substrate via may be positioned along the die edge such that the conductive material in the trench is electrically coupled to the through-substrate via, thereby forming a larger die edge contact. The integrated circuit die may be placed in a multi-die package wherein the multi-die package includes walls having a major surface perpendicular to a major surface of the integrated circuit die. The die edge contacts are electrically coupled to contacts on the walls of the multi-die package. The multi-die package may include edge contacts for connecting to another substrate, such as a printed circuit board, a packaging substrate, a high-density interconnect, or the like.

Abstract: In accordance with an embodiment, a probe card comprises a contact pad interface comprising front side contacts and back side contacts electrically coupled together. The front side contacts are arranged to simultaneously electrically couple respective bumps of a plurality of dies on a wafer, and the back side contacts are arranged to electrically couple respective contacts of a testing structure.

Abstract: A semiconductor device includes a bump structure over a pad region. The bump structure includes a copper layer and a lead-free solder layer over the copper layer. The lead-free solder layer is a SnAg layer, and the Ag content in the SnAg layer is less than 1.6 weight percent.