Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having one or more interior surfaces forming a recess within an upper surface of the substrate. Source/drain regions are disposed within the substrate on opposing sides of the recess. A first gate dielectric is arranged along the one or more interior surfaces forming the recess, and a second gate dielectric is arranged on the first gate dielectric and within the recess. A gate electrode is disposed on the second gate dielectric. The second gate dielectric includes one or more protrusions that extend outward from a recessed upper surface of the second gate dielectric and that are arranged along opposing sides of the second gate dielectric.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A method for manufacturing a device may include providing an ultra-high voltage (UHV) component that includes a source region and a drain region, and forming an oxide layer on a top surface of the UHV component. The method may include connecting a low voltage terminal to the source region of the UHV component, and connecting a high voltage terminal to the drain region of the UHV component. The method may include forming a shielding structure on a surface of the oxide layer provided above the drain region of the UHV component, forming a high voltage interconnection that connects to the shielding structure and to the high voltage terminal, and forming a metal routing that connects the shielding structure and the low voltage terminal.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A computer device is provided, which includes a display device and a host. The host includes a keyboard, a camera, a storage device, and a processor. The storage device is configured to store an augmented-reality keyboard program. The processor is configured to execute the augmented-reality keyboard program to perform the following steps: detecting input method information of an operating system running on the host, and obtaining key arrangement of the keyboard; utilizing the camera to capture an operation image of the keyboard; and when a user's hand is recognized in the operation image, displaying a virtual keyboard on the display device according to the key arrangement and the input method information, and displaying a typing operation of the user's hand by superimposing an augmented-reality hand object on a key position of the virtual keyboard corresponding the typing operation of the user's hand.

Abstract: A write request directed to the non-volatile memory device is received. A stripe associated with an address specified by the write request is present in the volatile memory device is determined. The volatile memory device includes a plurality of stripes, each stripe of the plurality of stripes having a plurality of managed units. The write request on a managed unit of the stripe in the volatile memory device is performed. The stripe in the volatile memory device is evicted to a stripe in the non-volatile memory device.

Abstract: A memory system includes a memory device and a processing device coupled to the memory device. The processing device receives a plurality of codewords; determines that one or more codewords of the plurality of codewords are corrupt; selects a first read voltage associated with the one or more codewords, such that the first read voltage is based on a second read voltage utilized for reading the one or more codewords in a previous read operation; and applies the first read voltage to a set of memory cells storing the one or more corrupted codewords.

Abstract: A system can include a memory devices and a processing device coupled with the memory devices. The processing device can receive a command and determine whether the command includes a value for a voltage associated with a read at the memory device. The processing device can also, responsive to the command failing to specify the value, select a second value, from multiple values, for the voltage associated with the read at the memory device based at on a duration subsequent to a previous write operation satisfying a threshold criterion. The processing device can also apply the voltage having the second value at memory cells of the memory device to determine a logic state for the memory cells.

Abstract: A system can include multiple memory devices and a processing device that is operatively coupled with the memory devices as well as with a controller device, and a sequencer device, where the controller device is configured to perform operations. The operations can include, in response to receiving a potential power loss indication signal, receiving a power fault interrupt detection signal, as well as synchronizing the power fault interrupt detection signal. They can also include sending one or more memory access commands to the sequencer device. The operations can also include executing the one or more memory access commands on a medium and stopping transmission of commands based on a power loss handling setting while executing the commands.

Abstract: A data processing system includes a storage medium, and a controller including a data processing block, configured to receive data from a host, transmit the received data to the storage medium, read data from the storage medium in response to a read request from the host, and decode the read data by the data processing block according to multiple decoding modes. The data processing block includes a first decoder and a second decoder, and is configured to manage the first decoder and the second decoder to run the decoding for the read data, and activate a fast decoding having shorter latency than a normal decoding after a fast decoding condition is satisfied.

Abstract: A data processing system includes a storage medium, and a controller including a data processing block, configured to receive data from a host, transmit the received data to the storage medium, read data from the storage medium in response to a read request from the host, and decode the read data by the data processing block according to multiple decoding modes. The data processing block includes a first decoder and a second decoder, and is configured to manage the first decoder and the second decoder to run the decoding for the read data, and activate a fast decoding having shorter latency than a normal decoding after a fast decoding condition is satisfied.

Abstract: A system can include multiple memory devices and a processing device that is operatively coupled with the memory devices as well as with a controller device, and a sequencer device, where the controller device is configured to perform operations. The operations can include, in response to receiving a potential power loss indication signal, receiving a power fault interrupt detection signal, as well as synchronizing the power fault interrupt detection signal. They can also include sending one or more memory access commands to the sequencer device. The operations can also include executing the one or more memory access commands on a medium and stopping transmission of commands based on a power loss handling setting while executing the commands.

Abstract: A write request directed to the non-volatile memory device is received. A stripe associated with an address specified by the write request is present in the volatile memory device is determined. The volatile memory device includes a plurality of stripes, each stripe of the plurality of stripes having a plurality of managed units. The write request on a managed unit of the stripe in the volatile memory device is performed. The stripe in the volatile memory device is evicted to a stripe in the non-volatile memory device.

Abstract: A system can include a memory devices and a processing device coupled with the memory devices. The processing device can receive a command and determine whether the command includes a value for a voltage associated with a read at the memory device. The processing device can also, responsive to the command failing to specify the value, select a second value, from multiple values, for the voltage associated with the read at the memory device based at on a duration subsequent to a previous write operation satisfying a threshold criterion. The processing device can also apply the voltage having the second value at memory cells of the memory device to determine a logic state for the memory cells.

Abstract: A data processing system includes a storage medium, and a controller including a data processing block, configured to receive data from a host, transmit the received data to the storage medium, read data from the storage medium in response to a read request from the host, and decode the read data by the data processing block according to multiple decoding modes. The data processing block includes a first decoder and a second decoder, and is configured to manage the first decoder and the second decoder to run the decoding for the read data, and activate a fast decoding having shorter latency than a normal decoding after a fast decoding condition is satisfied.

Abstract: A data processing system includes a storage medium, and a controller including a data processing block, configured to receive data from a host, transmit the received data to the storage medium, read data from the storage medium in response to a read request from the host, and decode the read data by the data processing block according to multiple decoding modes. The data processing block includes a first decoder and a second decoder, and is configured to manage the first decoder and the second decoder to run the decoding for the read data, and activate a fast decoding having shorter latency than a normal decoding after a fast decoding condition is satisfied.

Abstract: A data processing system includes a storage medium, and a controller including a data processing block, configured to receive data from a host, transmit the received data to the storage medium, read data from the storage medium in response to a read request from the host, and decode the read data by the data processing block according to multiple decoding modes. The data processing block includes a first decoder and a second decoder, and is configured to manage the first decoder and the second decoder to run the decoding for the read data, and activate a fast decoding having shorter latency than a normal decoding after a fast decoding condition is satisfied.

Abstract: A data processing system includes a storage medium, and a controller including a data processing block, configured to receive data from a host, transmit the received data to the storage medium, read data from the storage medium in response to a read request from the host, and decode the read data by the data processing block according to multiple decoding modes. The data processing block includes a first decoder and a second decoder, and is configured to manage the first decoder and the second decoder to run the decoding for the read data, and activate a fast decoding having shorter latency than a normal decoding after a fast decoding condition is satisfied.

Abstract: A direct action solenoid valve includes: a valve body, on the valve body is disposed a water inlet port and two water outlet ports, the two water outlet ports are a first water outlet port and a second water outlet port respectively; a first water passage channel, formed between the water inlet port and the first water outlet port, and a second water passage channel, formed between the water inlet port and the second water outlet port; a chamber, formed between the first water passage channel and the second water passage channel; a control piece, disposed in the chamber, to control the first water outlet port to open; a solenoid valve head, disposed in the valve body; and a hydroelectric generator, disposed in the valve body to supply power to the solenoid valve head.