Patents by Inventor Yi-Ming Chen

Yi-Ming Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220148938
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.
    Type: Application
    Filed: November 9, 2020
    Publication date: May 12, 2022
    Applicant: Vanguard International Semiconductor Corporation
    Inventors: Shin-Cheng LIN, Cheng-Wei CHOU, Ting-En HSIEH, Yi-Han HUANG, Kwang-Ming LIN, Yung-Fong LIN, Cheng-Tao CHOU, Chi-Fu LEE, Chia-Lin CHEN, Shu-Wen CHANG
  • Publication number: 20220148975
    Abstract: An electronic package and a manufacturing method thereof, which embeds an electronic structure acting as an auxiliary functional component and a plurality of conductive pillars in an encapsulation layer, and disposes an electronic component on the encapsulation layer, so as to facilitate electrical transmission with the electronic component in a close range.
    Type: Application
    Filed: December 28, 2020
    Publication date: May 12, 2022
    Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.
    Inventors: Wei-Jhen Chen, Chih-Hsun Hsu, Yuan-Hung Hsu, Chih-Nan Lin, Chang-Fu Lin, Don-Son Jiang, Chih-Ming Huang, Yi-Hsin Chen
  • Publication number: 20220131029
    Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.
    Type: Application
    Filed: January 6, 2022
    Publication date: April 28, 2022
    Inventors: Hsin-Chih Chiu, Chih-Chiang Lu, Chun-Yu Lin, Ching-Huai Ni, Yi-Ming Chen, Tzu-Chieh Hsu, Ching-Pei Lin
  • Publication number: 20220059727
    Abstract: The present disclosure provides a semiconductor device and a semiconductor component. The semiconductor device includes an active structure, a ring-shaped semiconductor contact layer, a first electrode, and an insulating layer. The active structure has a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. The ring-shaped semiconductor contact layer is located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall. The first electrode has an upper surface and covers the ring-shaped semiconductor contact layer. The insulating layer covers the first electrode and the active structure and has a second inner sidewall and a second outer sidewall. The first inner sidewall is not flush with the second inner sidewall in a vertical direction.
    Type: Application
    Filed: August 19, 2021
    Publication date: February 24, 2022
    Inventors: Hao-Chun Liang, Wei-Shan Yeoh, Yao-Ning Chan, Yi-Ming Chen, Shih-Chang Lee
  • Patent number: 11251328
    Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.
    Type: Grant
    Filed: May 11, 2020
    Date of Patent: February 15, 2022
    Assignee: EPISTAR CORPORATION
    Inventors: Hsin-Chih Chiu, Chih-Chiang Lu, Chun-Yu Lin, Ching-Huai Ni, Yi-Ming Chen, Tzu-Chieh Hsu, Ching-Pei Lin
  • Patent number: 11223144
    Abstract: An antenna structure capable of transmitting radio waves in multiple polarizations is positioned on a circuit board. The circuit board includes upper and lower surfaces and peripheral side wall. The antenna structure includes a first antenna array, a second antenna array, and a control circuit. Each antenna unit of the first antenna array is positioned on one of the upper surface or the lower surface, a portion of each antenna unit of the second array is positioned on the peripheral side wall. The other portion of each antenna unit bended and positioned on at least one of the upper surface or the lower surface. In activating the first antenna array and the second antenna array the control circuit can generate radio transmissions in multiple polarizations. A wireless communication device is also provided.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: January 11, 2022
    Assignee: Mobile Drive Netherlands B.V.
    Inventors: Kuo-Cheng Chen, Yi-Ming Chen, Siang-Yu Siao
  • Patent number: 11217900
    Abstract: An antenna structure suitable for 5G use in controlling direction of radio beams and in increasing antenna gain includes a substrate, an array of antennas, a main body, a lens array, a grounding plate, and a high-impedance surface (HIS) layer embedded into the substrate. The array of antenna units is positioned on the substrate surface under the protection of the main body. The lens array includes a lens units for each antenna unit, the lens units concentrate the beams generated by the antenna units. The grounding plate is underneath and grounds the antenna units. The HIS layer suppresses surface waves generated by the lens arrays and the substrate and increases a gain of the antenna structure in certain directions.
    Type: Grant
    Filed: October 17, 2019
    Date of Patent: January 4, 2022
    Assignee: Mobile Drive Netherlands B.V.
    Inventors: Zheng Lin, Yi-Ming Chen, Chih-Chung Hsieh, Ke-Jia Lin, Kuo-Cheng Chen
  • Patent number: 11201390
    Abstract: An antenna structure serving as an emitter in a radar device with optimized isolation of signal comprises antenna array as the radiating element. The antenna array includes array units. Each array unit includes radiating units connected by a feeder. Radiation area of each radiating unit gradually decreases from a center of array unit to ends of array unit. A specified distance is defined between centers of adjacent radiating units along an extending direction of the feeder. The feeder transmits a current signal to the array units, the radiating unit emits a radar scanning beam based on the current signal.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: December 14, 2021
    Assignee: Mobile Drive Netherlands B.V.
    Inventors: Kuo-Cheng Chen, Jian-Wei Chang, Yi-Ming Chen, Zheng Lin, Chih-Chung Hsieh, Ke-Jia Lin
  • Patent number: 11189913
    Abstract: An antenna structure serving as a radar emitter with extended long range function comprises a radiating element comprised of radiating units connected in series by a feeder. Each two adjacent radiating units are spaced apart from each other by a specified distance. Lengths of the radiating units are same, and width of the radiating units gradually decreases from a center to ends. The feeder transmits a current signal to the radiating element. The radiating element emits a radar beam based on the current signal.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: November 30, 2021
    Assignee: Mobile Drive Netherlands B.V.
    Inventors: Kuo-Cheng Chen, Yi-Ming Chen, Siang-Yu Siao, Zheng Lin, Teng-Bang Hou, Chih-Chung Hsieh
  • Publication number: 20210217930
    Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.
    Type: Application
    Filed: March 31, 2021
    Publication date: July 15, 2021
    Inventors: Yi-Ming CHEN, Tsung-Hsien YANG
  • Patent number: 11000535
    Abstract: A composition for inhibiting a liver tumor in an organism is disclosed. The composition includes an activator being 1,2,3,4,6-penta-O-galloyl-Beta-D-glucopyranoside (PGG), wherein PGG is extracted from at least one of Paeonia lactiflora Pall. and Galla Chinesis.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: May 11, 2021
    Assignee: KAOHSIUNG MEDICAL UNIVERSITY
    Inventors: Yi-Ming Chen, Chia-Hung Yen, Chung-Kuang Lu
  • Patent number: 10998468
    Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: May 4, 2021
    Assignee: Epistar Corporation
    Inventors: Yi-Ming Chen, Tsung-Hsien Yang
  • Patent number: 10992060
    Abstract: A small-scale antenna structure with high gain and with controllable polarization direction includes a motherboard, an antenna array thereon, and antenna units. An array of lens units is superimposed directly over and covers the antenna units. A wireless communication device using the antenna structure is also provided. The wireless communication device includes a main body and the antenna structure. The main body receives the antenna structure.
    Type: Grant
    Filed: May 22, 2019
    Date of Patent: April 27, 2021
    Assignee: Shenzhen Next Generation Communications Limited
    Inventors: Kuo-Cheng Chen, Yi-Ming Chen, Siang-Yu Siao, Yi-Kuo Chen, Hsi-Hsing Hsu
  • Publication number: 20210118665
    Abstract: An apparatus for semiconductor manufacturing includes an input port to receive a carrier, wherein the carrier includes a carrier body, a housing installed onto the carrier body, and a filter installed between the carrier body and the housing. The apparatus further includes a first robotic arm to uninstall the housing from the carrier and to reinstall the housing into the carrier; one or more second robotic arms to remove the filter from the carrier and to install a new filter into the carrier; and an output port to release the carrier to production.
    Type: Application
    Filed: December 7, 2020
    Publication date: April 22, 2021
    Inventors: Jen-Ti Wang, Chih-Wei Lin, Fu-Hsien Li, Yi-Ming Chen, Cheng-Ho Hung
  • Publication number: 20210119078
    Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.
    Type: Application
    Filed: December 7, 2020
    Publication date: April 22, 2021
    Inventors: Yi-Ming CHEN, Hao-Min KU, Chih-Chiang LU, Tzu-Chieh HSU
  • Patent number: 10983501
    Abstract: A tool-life prediction method, applicable to a machine tool having a machining end, includes steps of capturing a plurality of measurement data from a tool of the machining end, transforming each of the plurality of measurement data into a corresponding complex process capability index (Cpk), utilizing an artificial neural network being trained to generate a tool-life prediction scale with respect to the Cpk, and then based on the tool-life prediction scale to determine a remaining tool life of the tool. In addition, a tool life prediction system is also provided.
    Type: Grant
    Filed: April 11, 2019
    Date of Patent: April 20, 2021
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Yi-Ming Chen, Chi-Cheng Lin, Shu-Chung Liao, Chen-Yu Kai, Ta-Jen Peng
  • Publication number: 20210043803
    Abstract: An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure.
    Type: Application
    Filed: August 7, 2020
    Publication date: February 11, 2021
    Inventors: Chung-Hao WANG, Yu-Chi Wang, Yi-Ming Chen, Yi-Yang Chiu, Chun-Yu Lin
  • Patent number: 10895700
    Abstract: An optical sub-assembly module and a cap thereof are provided. Two opposite ends of the cap are respectively defined as a light source end and a connecting end. The cap includes a receiving groove, a longitudinal groove, a lens structure and a plurality of pillar structures. The receiving groove is recessed inwardly from the light source end. The longitudinal groove is recessed inwardly from the connecting end. The lens structure is integrally formed with the cap, the lens structure is located between the receiving groove and the longitudinal groove, and the lens structure blocks spatial communication between the receiving groove and the longitudinal groove. Each of the pillar structures is connected to an inner wall that surrounds the receiving groove.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: January 19, 2021
    Assignee: AXCEN PHOTONICS CORP.
    Inventor: Yi-Ming Chen
  • Patent number: 10892380
    Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.
    Type: Grant
    Filed: November 4, 2019
    Date of Patent: January 12, 2021
    Assignee: EPISTAR CORPORATION
    Inventors: Yi-Ming Chen, Hao-Min Ku, Chih-Chiang Lu, Tzu-Chieh Hsu
  • Patent number: 10861692
    Abstract: A method includes receiving a carrier with a plurality of wafers inside; supplying a purge gas to an inlet of the carrier; extracting an exhaust gas from an outlet of the carrier; and generating a health indicator of the carrier while performing the supplying of the purge gas and the extracting of the exhaust gas.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: December 8, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jen-Ti Wang, Chih-Wei Lin, Fu-Hsien Li, Yi-Ming Chen, Cheng-Ho Hung