Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: A cover film includes a release layer and a polyimide layer disposed on the release layer. The polyimide layer includes an inner surface and an outer surface opposite to the inner surface. The outer surface is exposed to the atmosphere, and the polyimide layer is formed from a reaction of a polyimide composition made of diamine monomer and tetracarboxylic dianhydride monomer. The polyimide layer further includes a cross-linker and an initiator. The diamine monomer is an aliphatic diamine monomer with a number of carbon greater than or equal to 36. A lowest viscosity of the polyimide layer is less than 20000 Pa·s when polyimide layer is under a temperature in a range of 60° C. to 160° C.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: A method includes receiving a carrier with a plurality of wafers inside; supplying a purge gas to an inlet of the carrier; extracting an exhaust gas from an outlet of the carrier; and generating a health indicator of the carrier while performing the supplying of the purge gas and the extracting of the exhaust gas.

Abstract: A remote machining optimization system for a machine tool is provided, which includes an input unit configured to input a machining parameter including a spindle speed and a cut depth; a receiving unit configured to receive sound signals and vibration signals from the machine tool; a processing unit configured to generate a machining program with a program generating module, to modify the spindle speed and the cut depth according to the sound signals with a speed optimization module and a depth optimization module, respectively; a communication unit configured to send the machining program to the machine tool; and a storage unit configured to store the modified spindle speed and the cut depth.

Abstract: A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode.

Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.

Abstract: The present invention is directed to a use of anti-fatigue probiotic bacteria for improving exercise performance, particularly the fatigue caused by exercise. The anti-fatigue probiotic bacteria increases muscle mass and endurance, decreases blood lactate, ammonia, and creatine kinase concentration, and changes body composition; the said bacteria can be used to improve exercise performance.

Abstract: A remote editing card printing system by using mobile handsets includes a card printer for printing cards having a specific size. The card printer includes a transformer for transferring instructions into machine codes for instructing a printing unit of the card printer to print cards with predetermine drawings or texts on cards; A layout editor installed on the electronic computer device; the layout editor causing a user to input printing instructions or layout instructions through an I/O device of the electronic computer device to edit a layout of a card and thus causing the printing unit to print the cards based on the layout and printing instructions. The layout editor may be installed on an electronic computer device or a cloud device, and an APP is installed on a handset to be connected to the layout editor so that a user may edit the instructions directly on the APP, or the layout editor is installed on the handset directly.

Abstract: A small form-factor pluggable (SFP) transceiver is provided for being inserted into an electrical connection slot of an electronic apparatus. The SFP transceiver includes a housing, two electrical signal connectors disposed a front end of the housing, and an unlocking assembly having an unlocking member and an interlock member. The housing includes an engaging portion disposed on a bottom surface thereof and configured to be engaged with the electrical connection slot, thereby firmly fastening the SFP transceiver into the electrical connection slot. The unlocking member has a manipulating portion exposed at the front end and arranged adjacent to a top surface of the housing. The interlock member is movably disposed on the housing. When the manipulating portion is rotated in a direction away from the front end and the top surface, the unlocking member moves the interlock member to separate the engaging portion from the electrical connection slot.

Abstract: A small form-factor pluggable transceiver includes a housing, which includes an upper cover, a lower cover fastened to the upper cover, and a front plate arranged between an end of the upper cover and an end of the lower cover. The front plate, the upper cover, and the lower cover are assembled together so as to jointly define an accommodating space. The front plate includes a metallic layer defining a main surface thereof and two plastic structures connected to the metallic layer. The front plate has two through holes penetrating through the metallic layer for respectively accommodating two electrical signal connectors, and the two plastic structures are respectively arranged in the two through holes. When the two electrical signal connectors are respectively disposed in the two through holes, the plastic structures are arranged between the metallic layer and the electrical signal connectors separated from the metallic layer.

Abstract: A light-emitting device comprises a semiconductor structure comprising a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a first intermediate layer, a second intermediate layer, and an active region capable of emitting radiation, wherein the active region is between the first intermediate layer and the second intermediate layer, the first intermediate layer is in direct contact with the first conductivity-type semiconductor layer, the second intermediate layer is in direct contact with the second conductivity-type semiconductor layer, and the active region comprises alternated well layers and barrier layers, wherein each barrier layer has a thickness; wherein a first difference between a refractive index of the first intermediate layer and a refractive index of the first conductivity-type semiconductor layer is less than a second difference between a refractive index of the second intermediate layer and a refractive index of the second conductivity-type semiconduct

Abstract: A semiconductor device, comprises a semiconductor stack comprising a first area and a second area, wherein the second area comprises a first side wall, a first isolation path formed between the first area and the second area, a second isolation path formed in the semiconductor stack, an isolation layer formed in the first isolation path and covering the first side wall, an electrical contact layer formed under the semiconductor stack, and an electrode contact layer directly contacting the electrical contact layer.

Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

Abstract: The present disclosure provides an optoelectronic device comprising a semiconductor stack comprising a first side having a first length; a first contact layer on the semiconductor stack; and a second contact layer on the semiconductor stack opposite to the first contact layer, wherein the second contact layer is not overlapped with the first contact layer in a vertical direction; and wherein the second contact layer comprises multiple contact regions separated from each other and arranged in a two-dimensional array, wherein a first distance between the two adjacent contact regions is between 0.8% and 8% of the first length.

Abstract: A small form-factor pluggable (SFP) transceiver provided for being inserted into an electrical connection slot includes a housing, two electrical signal connectors, a circuit board, and two flexible assemblies. The housing defines an accommodating space. Each electrical signal connector has an inserting end arranged outside a front end of the housing and an opposite connecting end arranged in the accommodating space. The circuit board is fixed to the housing and is arranged in the accommodating space. Each flexible assembly has an end detachably connected to the circuit board and an opposite end detachably connected to the respective electrical signal connector. The SFP transceiver is configured to receive a signal, and the signal travels from the each electrical signal connector to the circuit board through the corresponding flexible assembly. Each flexible assembly, the corresponding electrical signal connector, and the circuit board are configured to be independently tested.

Abstract: A composition for inhibiting a liver tumor in an organism is disclosed. The composition includes an activator being 1,2,3,4,6-penta-O-galloyl-Beta-D-glucopyranoside (PGG), wherein PGG is extracted from at least one of Paeonia lactiflora Pall. and Galla Chinesis.

Abstract: A light-emitting diode comprises: a first light-emitting structure, comprising: a first area comprising a side wall; a second area; and a first isolation path having an electrode isolation layer between the first area and the second area, wherein the side wall of the first area is in the first isolation path; an electrode contact layer covering the side wall of the first area, wherein the electrode contact layer is separated from electrode isolation layer; an electrical connecting structure covering the second area; and an electrical contact layer under the electrical connecting structure, wherein the electrical contact layer directly contacts the electrical connecting structure; wherein each of the first area and the second area sequentially comprises a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer.

Abstract: The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks comprising a first semiconductor stacked block and a second semiconductor stacked block on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; conducting a separating step to separate the first semiconductor stacked block from the first substrate, and the second semiconductor stacked block remains on the first substrate; providing an element substrate comprising a patterned metal layer; and conducting a bonding step to bond and align the first semiconductor stacked block or the second semiconductor stacked block with the patterned metal layer.

Abstract: A dual-function wafer handling apparatus for handling a wafer includes an aligner for rotating the wafer, an ID reader disposed corresponding to an edge of the wafer for reading an ID of the wafer, and an optical defect inspection unit for capturing images to analysis.