Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: A system includes a plurality of semiconductor processing tools; a carrier purge station; a carrier repair station; and an overhead transport (OHT) loop for transporting one or more substrate carriers among the plurality of semiconductor processing tools, the carrier purge station, and the carrier repair station. The carrier purge station is configured to receive a substrate carrier from one of the plurality of semiconductor processing tools, purge the substrate carrier with an inert gas, and determine if the substrate carrier needs repair. The carrier repair station is configured to receive a substrate carrier to be repaired and replace one or more parts in the substrate carrier.

Abstract: Disclosed is a light-emitting device comprising a light-emitting stack having a length, a width, a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer, wherein the first semiconductor layer, the active layer, and the second semiconductor layer are stacked in a stacking direction. A first electrode is coupled to the first semiconductor layer and extended in a direction parallel to the stacking direction and a second electrode is coupled to the second semiconductor layer and extended in a direction parallel to the stacking direction. A dielectric layer is disposed between the first electrode and the second electrode.

Abstract: An apparatus for semiconductor manufacturing includes an input port to receive a carrier, wherein the carrier includes a carrier body, a housing installed onto the carrier body, and a filter installed between the carrier body and the housing. The apparatus further includes a first robotic arm to uninstall the housing from the carrier and to reinstall the housing into the carrier; one or more second robotic arms to remove the filter from the carrier and to install a new filter into the carrier; and an output port to release the carrier to production.

Abstract: A docker image is received. The docker image is for a container. The container contains files that allow for virtualization of applications that run within the container. The docker image is parsed to identify layer files in the docker image. Installed software components (e.g., installed files) and/or hardware components in the layer files are identified. Software application index calls are made to generate information that identifies relationships between the installed software components and/or hardware components. The relationships between the installed software components and/or hardware components are then displayed to a user.

Abstract: An optoelectronic semiconductor device includes a substrate, a first type semiconductor structure, a second type semiconductor structure, an active structure and a contact structure. The first type semiconductor structure is located on the substrate and has a first protrusion part with a first thickness and a platform part with a second thickness. The second type semiconductor structure is located on the first type semiconductor structure. The active structure is between the first type semiconductor structure and the second type semiconductor structure. The contact structure is disposed between the first type semiconductor structure and the substrate. The second thickness of the platform part is in a range of 0.01 ?m to 1 ?m.

Abstract: A semiconductor device includes a semiconductor stack, a third semiconductor structure, a dielectric layer, and a reflective layer under the third semiconductor structure. The semiconductor stack includes a first semiconductor structure, an active structure, a second semiconductor structure. The first semiconductor structure has a first surface which includes a first portion and a second portion, and the first surface has a first area. The third semiconductor structure connects to the first portion, and has a second surface with a second area. The dielectric layer connects to the second portion and includes a plurality of openings, and the plurality of openings have a third area. A ratio of the second area to the first area is between 0.1˜0.7, and a ratio of the third area to the first area is less than 0.2.

Abstract: Disclosed herein is a method of treating a cancer in a subject having or suspected of having the cancer that has a mutated PREX2 expressed thereon. According to the embodiment of the present disclosure, the mutation is G258V, S1113R, E1346D or K400fs. The method includes the step of administering an effective amount of a composition to the subject, wherein the composition includes a therapeutic molecule for producing a polypeptide that exhibits a binding affinity to the mutated PREX2 protein expressed in the cancer in the subject.

Abstract: A semiconductor device is provided, which includes a semiconductor stack and a first contact structure. The semiconductor stack includes an active layer and has a first surface and a second surface. The first contact structure is located on the first surface and includes a first semiconductor layer, a first metal element-containing structure and a first p-type or n-type layer. The first metal element-containing structure includes a first metal element. The first p-type or n-type layer physically contacts the first semiconductor layer and the first metal element-containing structure. The first p-type or n-type layer includes an oxygen element (O) and a second metal element and has a thickness less than or equal to 20 nm, and the first semiconductor layer includes a phosphide compound or an arsenide compound.

Abstract: An optoelectronic semiconductor device includes a semiconductor stack, an electrode, and a plurality of contact portions. The semiconductor stack includes a first type semiconductor structure, an active structure on the first type semiconductor structure, and a second type semiconductor structure on the active structure. The first type semiconductor structure includes a first protrusion part, a second protrusion part and a platform part between the first protrusion part and the second protrusion part. The semiconductor stack includes a thickness. The electrode on the second type semiconductor structure includes a region corresponding to the first protrusion. The contact portions are located at the second protrusion part without being at the first protrusion part. The contact portions are attached to the first type semiconductor structure.

Abstract: A lubricating oil volume adjustment system and a lubricating oil volume adjustment method are provided. The system includes a storage device and a processor and is connected to a machine including a motor through a data acquisition device acquiring current information of the motor. The storage device stores a machine learning model trained by a training data set including a plurality of pieces of the current information of the motor during operation and a plurality of temperature values measured during operation of the machine. The processor is configured to acquire the current information of present operation of the motor by using the data acquisition device, predict a temperature value of the machine when the motor operates under the current information by using the machine learning model, and calculate and adjust a lubricating oil volume suitable to be used by the machine during operation according to the predicted temperature value.

Abstract: This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active layer formed between the first-type semiconductor layer and the second-type semiconductor layer; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface. A critical angle at the first interface for a light emitted from the light-emitting stack is larger than that at the second interface. The reflective structure electrically connects to the first-type semiconductor layer at the first interface, and an area of the first interface is more than an area of the second interface in a top view.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: The present disclosure provides a semiconductor device and a semiconductor component. The semiconductor device includes an active structure, a ring-shaped semiconductor contact layer, a first electrode, and an insulating layer. The active structure has a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer located between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer. The ring-shaped semiconductor contact layer is located on the second-conductivity-type semiconductor layer and having a first inner sidewall and a first outer sidewall. The first electrode has an upper surface and covers the ring-shaped semiconductor contact layer. The insulating layer covers the first electrode and the active structure and has a second inner sidewall and a second outer sidewall. The first inner sidewall is not flush with the second inner sidewall in a vertical direction.

Abstract: A semiconductor light-emitting device comprises a substrate; a first adhesive layer on the substrate; multiple epitaxial units on the first adhesive layer; a second adhesive layer on the multiple epitaxial units; multiple first electrodes between the first adhesive layer and the multiple epitaxial units, and contacting the first adhesive layer and the multiple epitaxial units; and multiple second electrodes between the second adhesive layer and the multiple epitaxial units, and contacting the second adhesive layer and the multiple epitaxial units; wherein the multiple epitaxial units are totally separated.

Abstract: An antenna structure capable of transmitting radio waves in multiple polarizations is positioned on a circuit board. The circuit board includes upper and lower surfaces and peripheral side wall. The antenna structure includes a first antenna array, a second antenna array, and a control circuit. Each antenna unit of the first antenna array is positioned on one of the upper surface or the lower surface, a portion of each antenna unit of the second array is positioned on the peripheral side wall. The other portion of each antenna unit bended and positioned on at least one of the upper surface or the lower surface. In activating the first antenna array and the second antenna array the control circuit can generate radio transmissions in multiple polarizations. A wireless communication device is also provided.

Abstract: An antenna structure suitable for 5G use in controlling direction of radio beams and in increasing antenna gain includes a substrate, an array of antennas, a main body, a lens array, a grounding plate, and a high-impedance surface (HIS) layer embedded into the substrate. The array of antenna units is positioned on the substrate surface under the protection of the main body. The lens array includes a lens units for each antenna unit, the lens units concentrate the beams generated by the antenna units. The grounding plate is underneath and grounds the antenna units. The HIS layer suppresses surface waves generated by the lens arrays and the substrate and increases a gain of the antenna structure in certain directions.

Abstract: An antenna structure serving as an emitter in a radar device with optimized isolation of signal comprises antenna array as the radiating element. The antenna array includes array units. Each array unit includes radiating units connected by a feeder. Radiation area of each radiating unit gradually decreases from a center of array unit to ends of array unit. A specified distance is defined between centers of adjacent radiating units along an extending direction of the feeder. The feeder transmits a current signal to the array units, the radiating unit emits a radar scanning beam based on the current signal.

Abstract: An antenna structure serving as a radar emitter with extended long range function comprises a radiating element comprised of radiating units connected in series by a feeder. Each two adjacent radiating units are spaced apart from each other by a specified distance. Lengths of the radiating units are same, and width of the radiating units gradually decreases from a center to ends. The feeder transmits a current signal to the radiating element. The radiating element emits a radar beam based on the current signal.

Abstract: A semiconductor light-emitting device comprises a semiconductor stack having a first surface, wherein the first surface comprises multiple protrusion portions and multiple concave portions; a first electrode on the first surface and electrically connecting with the semiconductor stack; a second electrode on the first surface and electrically connecting with the semiconductor stack; and a transparent conduction layer conformally covering the first surface and between the first electrode and the semiconductor stack, wherein the first electrode comprises a first bonding portion and a first extending portion, and the first extending portion is between the first bonding portion and the transparent conduction layer and conformally covers the transparent conduction layer.