Patents by Inventor Yi-Ming Lin
Yi-Ming Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11749760Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.Type: GrantFiled: May 13, 2022Date of Patent: September 5, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Han Lin, Chao-Ching Chang, Yi-Ming Lin, Yen-Ting Chou, Yen-Chang Chen, Sheng-Chan Li, Cheng-Hsien Chou
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Patent number: 11735436Abstract: An apparatus for fabricating a semiconductor device has a housing defining a buffer chamber, a plurality of reactor ports formed in the housing for establishing interfaces with a plurality of process chambers that are to receive a wafer during a fabrication process to fabricate the semiconductor device, a wafer positioning robot positioned within the buffer chamber to transport the wafer between the plurality of process chambers through the plurality of reactor ports, a purge port formed in the housing for introducing a purge gas into the buffer chamber, a pump port formed in the housing for exhausting a portion of the purge gas from the buffer chamber, and a first flow enhancer that directs the purge gas flowing in an axial direction along a longitudinal axis of the purge port into the buffer chamber in a plurality of radial directions relative to the longitudinal axis.Type: GrantFiled: August 10, 2022Date of Patent: August 22, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chih-Tsung Lee, Sheng-Chun Yang, Yun-Tzu Chiu, Chao-Hung Wan, Yi-Ming Lin, Chyi-Tsong Ni
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Publication number: 20230260764Abstract: A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.Type: ApplicationFiled: April 28, 2023Publication date: August 17, 2023Inventors: Sheng-chun YANG, Po-Wei LIANG, Chao-Hung WAN, Yi-Ming LIN, Liu Che KANG
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Patent number: 11685994Abstract: Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.Type: GrantFiled: September 13, 2019Date of Patent: June 27, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Sheng-chun Yang, Yi-Ming Lin, Chih-tsung Lee, Yun-Tzu Chiu, Chao-Hung Wan
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Publication number: 20230197421Abstract: A method includes loading a wafer over a wafer chuck in a process chamber; performing a deposition process on the loaded wafer; supplying a fluid medium to a fluid guiding structure in the wafer chuck from a fluid inlet port on the wafer chuck, the fluid guiding structure comprising a plurality of arc-shaped channels fluidly communicated with each other; guiding the fluid medium from a first one of the arc-shaped channels of the fluid guiding structure to a second one of the arc-shaped channels of the fluid guiding structure. The second one of the arc-shaped channels of the fluid guiding structure is concentric with the first one of the arc-shaped channels of the fluid guiding structure from a top view.Type: ApplicationFiled: February 22, 2023Publication date: June 22, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Sheng-Chun YANG, Yi-Ming LIN, Po-Wei LIANG, Chu-Han HSIEH, Chih-Lung CHENG, Po-Chih HUANG
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Patent number: 11666950Abstract: A method of forming a process film includes the following operations. A substrate is transferred into a process chamber having an interior surface. A process film is formed over the substrate, and the process film is also formed on the interior surface of the process chamber. The substrate is transferred out of the process chamber. A non-process film is formed on the interior surface of the process chamber. In some embodiments, porosity of the process film is greater than a porosity of the non-process film.Type: GrantFiled: May 28, 2020Date of Patent: June 6, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Lin Lee, Yi-Ming Lin, Chih-Hung Yeh, Zi-Yuang Wang
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Patent number: 11670491Abstract: A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.Type: GrantFiled: July 15, 2020Date of Patent: June 6, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Sheng-chun Yang, Po-Wei Liang, Chao-Hung Wan, Yi-Ming Lin, Liu Che Kang
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Publication number: 20230108888Abstract: An image sensor may include a polydimethylsiloxane (PDMS) layer that is subwavelength, hydrophobic, and/or antireflective. The PDMS layer may be fabricated to include a surface having a plurality of nanostructures (e.g., an array of convex protuberances and/or an array of concave recesses). The nanostructures may be formed through the use of a porous anodic aluminum oxide (AAO) template that uses a plurality of nanopores to form the array of convex protuberances and/or the array of concave recesses. The nanostructures may each have a respective width that is less than the wavelength of incident light that is to be collected by the image sensor to increase light absorption by increasing the angle of incidence for which the image sensor is capable of collecting incident light. This may increase the quantum efficiency of the image sensor and may increase the sensitivity of the image sensor.Type: ApplicationFiled: October 28, 2022Publication date: April 6, 2023Inventors: Yi-Ming LIN, Chen-Chi WU, Chen-Kuei CHUNG
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Publication number: 20230098570Abstract: A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus includes a CVD chamber including multiple wall portions. A pedestal is disposed inside the CVD chamber, configured to support a substrate. A gas inlet port is disposed on one of the wall portions and below a substrate support portion of the pedestal. In addition, a gas flow guiding member is disposed inside the CVD chamber, coupled to the gas inlet port, and configured to dispense cleaning gases from the gas inlet port into the CVD chamber.Type: ApplicationFiled: December 6, 2022Publication date: March 30, 2023Inventors: Chih-Hung YEH, Tsung-Lin LEE, Yi-Ming LIN, Sheng-Chun YANG, Tung-Ching TSENG
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Publication number: 20230069237Abstract: The present disclosure provides a method and a system therefore for processing wafer. The method includes: extracting a first gas from a chamber via a first route; blocking a second route used to be pumped down to chuck a wafer placed in the chamber, wherein the second route connects the chamber and the first route; and providing a second gas via a third route to purge a junction of the first route and the second route.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Inventors: SHENG-CHUN YANG, CHIH-LUNG CHENG, YI-MING LIN, PO-CHIH HUANG, YU-HSIANG JUAN, XUAN-YANG ZHENG, REN-JYUE WANG, CHIH-YUAN WANG
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Publication number: 20230067115Abstract: A system and method for generating a gas curtain over an access port of a processing chamber for a semiconductor substrate. A gas flow stabilizer and a gas flow receiver, each including a horizontal flow section and a vertical flow section cooperate to generate a gas curtain that impedes gas, e.g., oxygen, from outside the processing chamber, from flowing into the chamber, for example, when the access port is opened to add/or to remove a workpiece from the processing chamber.Type: ApplicationFiled: August 27, 2021Publication date: March 2, 2023Inventors: Sheng-chun YANG, Po-Chih HUANG, Chih-Lung CHENG, Yi-Ming LIN, Chen-Hao LIAO, Min-Cheng CHUNG
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Patent number: 11594401Abstract: A method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer on a top surface of a wafer chuck. The method also includes supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface. The method further includes supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a number of arc-shaped channels located underneath the fan-shaped sector of the top surface. In addition, the method includes supplying a plasma gas over the semiconductor wafer.Type: GrantFiled: February 25, 2020Date of Patent: February 28, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Sheng-Chun Yang, Yi-Ming Lin, Po-Wei Liang, Chu-Han Hsieh, Chih-Lung Cheng, Po-Chih Huang
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Patent number: 11590451Abstract: The water storage device includes: a water storage cavity and a water inlet, the water inlet being configured to feed a solution into the water storage cavity, the water storage cavity being configured to store or discharge the solution and containing a viscous substance; a guide rod and a floating device movable along the guide rod, the floating device being movable as a water level in the water storage cavity changes, and the viscous substance between the guide rod and the floating device restraining movement of the floating device; and a water curtain casing, the water curtain casing being connected to the water inlet and configured to split a part of the solution from the solution fed from the water inlet, and the solution split by the water curtain casing being configured to flush the viscous substance between the guide rod and the floating device.Type: GrantFiled: September 7, 2021Date of Patent: February 28, 2023Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.Inventors: Xiaomingxing Hou, Yi-Ming Lin
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Patent number: 11532459Abstract: A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus includes a CVD chamber including multiple wall portions. A pedestal is disposed inside the CVD chamber, configured to support a substrate. A gas inlet port is disposed on one of the wall portions and below a substrate support portion of the pedestal. In addition, a gas flow guiding member is disposed inside the CVD chamber, coupled to the gas inlet port, and configured to dispense cleaning gases from the gas inlet port into the CVD chamber.Type: GrantFiled: June 28, 2018Date of Patent: December 20, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Hung Yeh, Tsung-Lin Lee, Yi-Ming Lin, Sheng-Chun Yang, Tung-Ching Tseng
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Publication number: 20220392782Abstract: An apparatus for fabricating a semiconductor device has a housing defining a buffer chamber, a plurality of reactor ports formed in the housing for establishing interfaces with a plurality of process chambers that are to receive a wafer during a fabrication process to fabricate the semiconductor device, a wafer positioning robot positioned within the buffer chamber to transport the wafer between the plurality of process chambers through the plurality of reactor ports, a purge port formed in the housing for introducing a purge gas into the buffer chamber, a pump port formed in the housing for exhausting a portion of the purge gas from the buffer chamber, and a first flow enhancer that directs the purge gas flowing in an axial direction along a longitudinal axis of the purge port into the buffer chamber in a plurality of radial directions relative to the longitudinal axis.Type: ApplicationFiled: August 10, 2022Publication date: December 8, 2022Inventors: Chih-Tsung LEE, Sheng-chun Yang, Yun-Tzu Chiu, Chao-Hung Wan, Yi-Ming Lin, Chyi-Tsong Ni
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Publication number: 20220384239Abstract: A wafer fabricating system includes a wafer chuck, a gas inlet port, a fluid inlet port, first and second arc-shaped channels, a gas source, and a fluid containing source. The wafer chuck has a top surface, and orifices are formed on the top surface. The gas inlet port is formed in the wafer chuck and located underneath a fan-shaped sector of the top surface, wherein the gas inlet port is fluidly communicated with the orifices. The fluid inlet port is formed in the wafer chuck. The first and second arc-shaped channels are fluidly communicated with the fluid inlet port and located underneath the fan-shaped sector of the top surface and located at opposite sides of the gas inlet port from a top view. The gas source fluidly is connected to the gas inlet port. The fluid containing source fluidly is connected to the fluid inlet port.Type: ApplicationFiled: August 8, 2022Publication date: December 1, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Sheng-Chun YANG, Yi-Ming LIN, Po-Wei LIANG, Chu-Han HSIEH, Chih-Lung CHENG, Po-Chih HUANG
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Publication number: 20220356574Abstract: Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.Type: ApplicationFiled: July 20, 2022Publication date: November 10, 2022Inventors: Sheng-chun YANG, Yi-Ming LIN, Chih-tsung LEE, Yun-Tzu CHIU, Chao-Hung WAN
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Patent number: 11495635Abstract: An image sensor may include a polydimethylsiloxane (PDMS) layer that is subwavelength, hydrophobic, and/or antireflective. The PDMS layer may be fabricated to include a surface having a plurality of nanostructures (e.g., an array of convex protuberances and/or an array of concave recesses). The nanostructures may be formed through the use of a porous anodic aluminum oxide (AAO) template that uses a plurality of nanopores to form the array of convex protuberances and/or the array of concave recesses. The nanostructures may each have a respective width that is less than the wavelength of incident light that is to be collected by the image sensor to increase light absorption by increasing the angle of incidence for which the image sensor is capable of collecting incident light. This may increase the quantum efficiency of the image sensor and may increase the sensitivity of the image sensor.Type: GrantFiled: October 30, 2020Date of Patent: November 8, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yi-Ming Lin, Chen-Chi Wu, Chen-Kuei Chung
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Patent number: 11443961Abstract: An apparatus for fabricating a semiconductor device has a housing defining a buffer chamber, a plurality of reactor ports formed in the housing for establishing interfaces with a plurality of process chambers that are to receive a wafer during a fabrication process to fabricate the semiconductor device, a wafer positioning robot positioned within the buffer chamber to transport the wafer between the plurality of process chambers through the plurality of reactor ports, a purge port formed in the housing for introducing a purge gas into the buffer chamber, a pump port formed in the housing for exhausting a portion of the purge gas from the buffer chamber, and a first flow enhancer that directs the purge gas flowing in an axial direction along a longitudinal axis of the purge port into the buffer chamber in a plurality of radial directions relative to the longitudinal axis.Type: GrantFiled: August 26, 2020Date of Patent: September 13, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, ltd.Inventors: Chih-Tsung Lee, Sheng-Chun Yang, Yun-Tzu Chiu, Chao-Hung Wan, Yi-Ming Lin, Chyi-Tsong Ni
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Publication number: 20220278242Abstract: A device and method for fabricating the same is disclosed. For example, the device includes a sensor having a front side and a back side, a metal interconnect layer formed on the front side of the sensor, an anti-reflective coating formed on the back side of the sensor, a composite etch stop mask layer formed on the anti-reflective coating wherein the composite etch stop mask layer includes a hydrogen rich layer and a compressive high density layer, and a light filter formed on the composite etch stop mask layer.Type: ApplicationFiled: May 13, 2022Publication date: September 1, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Han LIN, Chao-Ching CHANG, Yi-Ming LIN, Yen-Ting CHOU, Yen-Chang CHEN, Sheng-Chan LI, Cheng-Hsien CHOU