Abstract: A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus includes a CVD chamber including multiple wall portions. A pedestal is disposed inside the CVD chamber, configured to support a substrate. A gas inlet port is disposed on one of the wall portions and below a substrate support portion of the pedestal. In addition, a gas flow guiding member is disposed inside the CVD chamber, coupled to the gas inlet port, and configured to dispense cleaning gases from the gas inlet port into the CVD chamber.

Abstract: An image sensor includes a substrate having a first region and a second region. The image sensor further includes a dielectric layer over the substrate. The image sensor further includes a conductive layer over the dielectric layer, wherein in the first region the conductive layer has a grid shape and in the second region a portion of the conductive layer is concave toward the substrate. The image sensor further includes a protective layer, wherein the protective layer is over the conductive layer in the first region, and over a top surface and along sidewalls of the conductive layer in the second region.

Abstract: An image sensor device is provided. The image sensor device includes a substrate having a first surface, a second surface, and a light-sensing region. The image sensor device includes a first isolation structure in the substrate and adjacent to the first surface. The first isolation structure surrounds the light-sensing region. The image sensor device includes a second isolation structure passing through the first isolation structure and the substrate under the first isolation structure. The second isolation structure surrounds the light-sensing region and a portion of the first isolation structure.

Abstract: A semiconductor structure includes a first dielectric layer, a first conductive via, a second conductive via and an etch stop layer. The first conductive via and the second conductive via are respectively disposed in the first dielectric layer. The etch stop layer is disposed on the first dielectric layer and contacts the first and second conductive vias. The etch stop layer includes nitrogen-and-oxygen-doped silicon carbide (NODC).

Abstract: A semiconductor structure includes a first dielectric layer, a first conductive via, a second conductive via and an etch stop layer. The first conductive via and the second conductive via are respectively disposed in the first dielectric layer. The etch stop layer is disposed on the first dielectric layer and contacts the first and second conductive vias. The etch stop layer includes nitrogen-and-oxygen-doped silicon carbide (NODC).

Abstract: A method of fabricating an image sensor includes depositing a first dielectric layer over a substrate, removing a portion of the first dielectric layer from the substrate to form a trench, depositing a conductive layer over the first dielectric layer and in the trench, forming a protective layer lining a top surface of the conductive layer and sidewalls and a bottom surface of the groove in the conductive layer, and removing a portion of the conductive layer to form a grid structure. A groove corresponding to the trench is formed in the conductive layer.

Abstract: A method of fabricating an image sensor includes depositing a first dielectric layer over a substrate, removing a portion of the first dielectric layer from the substrate to form a trench, depositing a conductive layer over the first dielectric layer and in the trench, forming a protective layer lining a top surface of the conductive layer and sidewalls and a bottom surface of the groove in the conductive layer, and removing a portion of the conductive layer to form a grid structure. A groove corresponding to the trench is formed in the conductive layer.

Abstract: A semiconductor device includes a substrate, a dielectric structure, a top metal layer and a bonding structure. The dielectric structure is disposed on the substrate. The top metal layer is disposed in the dielectric structure. The bonding structure is disposed on the dielectric structure and the top metal layer. The bonding structure includes a silicon oxide layer, a silicon oxy-nitride layer, a conductive bonding layer and a barrier layer. The silicon oxide layer is disposed on the dielectric structure. The silicon oxy-nitride layer covers the silicon oxide layer. The conductive bonding layer is disposed in the silicon oxide layer and the silicon oxy-nitride layer. The barrier layer covers a sidewall and a bottom of the conductive bonding layer.

Abstract: Semiconductor devices and manufacturing method thereof are disclosed. The semiconductor device includes a substrate, a device layer, first and second conductive layers, first and second vias, and a MIM capacitor structure. The substrate includes active and passive regions. The device layer is in the active region. The first conductive layer is over the device layer. The second conductive layer is over the first conductive layer, wherein the first conductive layer is disposed between the device layer and the second conductive layer. The first via electrically connects the first and the second conductive layers. The MIM capacitor structure is between the first and the second conductive layers and in the passive region, and includes first and second electrodes and a capacitor dielectric layer therebetween. The capacitor dielectric layer includes Group IIIA-metal oxide or nitride. The second via electrically connects the second conductive layer and one of the first and second electrodes.

Abstract: A method for forming an image sensor device is provided. The method includes providing a substrate having a front surface and a back surface. The method includes removing a first portion of the substrate to form a first trench. The method includes forming a first isolation structure in the first trench. The first isolation structure has a top surface. The method includes removing a second portion of the first isolation structure and a third portion of the substrate to form a second trench passing through the first isolation structure and extending into the substrate. The method includes forming a second isolation structure in the second trench. The method includes forming a light-sensing region in the substrate. The method includes removing a fourth portion of the substrate to expose a first bottom portion of the second isolation structure and a backside of the light-sensing region.

Abstract: A semiconductor device includes a substrate, a dielectric structure, a top metal layer and a bonding structure. The dielectric structure is disposed on the substrate. The top metal layer is disposed in the dielectric structure. The bonding structure is disposed on the dielectric structure and the top metal layer. The bonding structure includes a silicon oxide layer, a silicon oxy-nitride layer, a conductive bonding layer and a barrier layer. The silicon oxide layer is disposed on the dielectric structure. The silicon oxy-nitride layer covers the silicon oxide layer. The conductive bonding layer is disposed in the silicon oxide layer and the silicon oxy-nitride layer. The barrier layer covers a sidewall and a bottom of the conductive bonding layer.

Abstract: Semiconductor image sensor devices and manufacturing method of the same are disclosed. The semiconductor image sensor device includes a substrate, a first pixel and a second pixel, and an isolation structure. The first pixel and second pixel are disposed in the substrate, wherein the first and second pixels are neighboring pixels. The isolation structure is disposed in the substrate and between the first and second pixels, wherein the isolation structure includes a dielectric layer, and the dielectric layer includes silicon oxycarbonitride (SiOCN).

Abstract: Semiconductor devices and manufacturing method thereof are disclosed. The semiconductor device includes a substrate, a device layer, first and second conductive layers, first and second vias, and a MIM capacitor structure. The substrate includes active and passive regions. The device layer is in the active region. The first conductive layer is over the device layer. The second conductive layer is over the first conductive layer, wherein the first conductive layer is disposed between the device layer and the second conductive layer. The first via electrically connects the first and the second conductive layers. The MIM capacitor structure is between the first and the second conductive layers and in the passive region, and includes first and second electrodes and a capacitor dielectric layer therebetween. The capacitor dielectric layer includes Group IIIA-metal oxide or nitride. The second via electrically connects the second conductive layer and one of the first and second electrodes.

Abstract: A battery management system (BMS) for actively balancing the voltages and capacities of battery cells in a serial battery pack is provided. The BMS uses an array of synchronized voltage monitors to detect underperforming cells in the battery pack, and employs high speed parallel energy transfers to actively balance the voltages and capacities of cells which exceeds a preset threshold limit against the average voltage and capacity of the remaining cells in the battery pack as an integrated unit. The BMS works both in charging and discharging operations, and is particularly useful for improving the overall performance of the battery packs in applications which require frequent high energy output rate, deep discharging, and fast charging operations.

Abstract: A detecting device for a cash drawer is used for detecting a status of the cash drawer. The detecting device includes an operation logic circuit and a switch element. The operation logic circuit has a first input terminal, a second input terminal and an output terminal. The first input terminal and the second input terminal are respectively coupled with a micro switch. The first input terminal and the second input terminal are respectively inputted with a high level voltage. When the first input terminal and the second input terminal have the same logic voltage levels, the operation logic circuit outputs a first logic level to the output terminal. When the first input terminal and the second input terminal have different logic voltage levels, the operation logic circuit outputs a second logic level to the output terminal. The switch element is coupled between an electromagnetic switch and the first input terminal.

Abstract: A lead acid battery having lightly gelled electrolyte is provided. The lead acid battery includes a plurality of alternating positive plates and negative plates, a plurality of separators sandwiched in between the positive plates and the negative plates, and a lightly gelled electrolyte including dilute sulfuric acid and silica particles substantially in the range of 0.1% to 3% of the electrolyte by weight. The silica particles are fumed silica particles.

Abstract: A lead acid battery having lightly gelled electrolyte is provided. The lead acid battery includes a plurality of alternating positive plates and negative plates, a plurality of separators sandwiched in between the positive plates and the negative plates, and a lightly gelled electrolyte including dilute sulfuric acid and silica particles substantially in the range of 0.1% to 3% of the electrolyte by weight. The silica particles are fumed silica particles.

Abstract: A cleaning apparatus comprises a housing, a driving mechanism and a plurality of cleaning elements. The driving mechanism is disposed in the housing. The cleaning elements are connected to the driving mechanism. The driving mechanism rotates the cleaning elements to clean the emitters.

Abstract: A lock assembly has a body, a locking cylinder, a latching device, a linking device and a locking mechanism. The locking cylinder has a pushing lug. The linking device is connected to and driven by the latching device. The locking mechanism is driven by the pushing lug of the locking cylinder and has a bolt base, a pushing arm and a locking bolt. The bolt base is mounted slidably in the body and has an edge pushed by the pushing lug on the locking cylinder and a limiting tab. The locking bolt is slidably mounted on the bolt base and abuts with the limiting tab on the bolt base when the locking bolt retracts completely into or extends out from the body. The locking bolt has a blocking tab selectively blocks the linking device.

Abstract: A detecting device for a cash drawer is used for detecting a status of the cash drawer. The detecting device includes an operation logic circuit and a switch element. The operation logic circuit has a first input terminal, a second input terminal and an output terminal. The first input terminal and the second input terminal are respectively coupled with a micro switch. The first input terminal and the second input terminal are respectively inputted with a high level voltage. When the first input terminal and the second input terminal have the same logic voltage levels, the operation logic circuit outputs a first logic level to the output terminal. When the first input terminal and the second input terminal have different logic voltage levels, the operation logic circuit outputs a second logic level to the output terminal. The switch element is coupled between an electromagnetic switch and the first input terminal.