Patents by Inventor Yi-Nien Su

Yi-Nien Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210134657
    Abstract: A method includes depositing a second dielectric layer over a first dielectric layer, depositing a third dielectric layer over the second dielectric layer, patterning a plurality of first openings in the third dielectric layer, etching the second dielectric layer through the first openings to form second openings in the second dielectric layer, performing a plasma etching process directed at the second dielectric layer from a first direction, the plasma etching process extending the second openings in the first direction, and etching the first dielectric layer through the second openings to form third openings in the first dielectric layer.
    Type: Application
    Filed: December 14, 2020
    Publication date: May 6, 2021
    Inventors: Yi-Nien Su, Shu-Huei Suen, Jyu-Horng Shieh, Ru-Gun Liu
  • Publication number: 20210096473
    Abstract: In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.
    Type: Application
    Filed: September 30, 2019
    Publication date: April 1, 2021
    Inventors: Ru-Gun LIU, Huicheng CHANG, Chia-Cheng CHEN, Jyu-Horng SHIEH, Liang-Yin CHEN, Shu-Huei SUEN, Wei-Liang LIN, Ya Hui CHANG, Yi-Nien SU, Yung-Sung YEN, Chia-Fong CHANG, Ya-Wen YEH, Yu-Tien SHEN
  • Patent number: 10867804
    Abstract: An embodiment method includes patterning a tin oxide layer to define a plurality of mandrels over a target layer; depositing a spacer layer over and along sidewalls of the plurality of mandrels; and patterning the spacer layer to provide a plurality of spacers on the sidewalls of the plurality of mandrels. The method further includes after patterning the spacer layer, removing the plurality of mandrels. The method further includes after removing the plurality of mandrels, patterning the target layer using the plurality of spacers.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Yi-Nien Su
  • Patent number: 10867840
    Abstract: A method includes depositing a second dielectric layer over a first dielectric layer, depositing a third dielectric layer over the second dielectric layer, patterning a plurality of first openings in the third dielectric layer, etching the second dielectric layer through the first openings to form second openings in the second dielectric layer, performing a plasma etching process directed at the second dielectric layer from a first direction, the plasma etching process extending the second openings in the first direction, and etching the first dielectric layer through the second openings to form third openings in the first dielectric layer.
    Type: Grant
    Filed: July 30, 2019
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Nien Su, Shu-Huei Suen, Jyu-Horng Shieh, Ru-Gun Liu
  • Patent number: 10840097
    Abstract: In some embodiments, a method of a semiconductor process includes conformally forming a spacer layer over a plurality of mandrels that are disposed over a mask layer, portions of the spacer layer disposed over opposing sidewalls of adjacent ones of the plurality of mandrels defining trenches therebetween, filling the trenches with a dummy material, and removing first portions of the dummy material in the trenches, thereby forming a plurality of openings in the dummy material. The method further includes filling the plurality of openings with a first material, removing a remaining portion of the dummy material in the trenches, and removing the plurality of mandrels after the removing the dummy material.
    Type: Grant
    Filed: April 8, 2019
    Date of Patent: November 17, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Yi-Nien Su
  • Publication number: 20200105585
    Abstract: A method includes depositing a second dielectric layer over a first dielectric layer, depositing a third dielectric layer over the second dielectric layer, patterning a plurality of first openings in the third dielectric layer, etching the second dielectric layer through the first openings to form second openings in the second dielectric layer, performing a plasma etching process directed at the second dielectric layer from a first direction, the plasma etching process extending the second openings in the first direction, and etching the first dielectric layer through the second openings to form third openings in the first dielectric layer.
    Type: Application
    Filed: July 30, 2019
    Publication date: April 2, 2020
    Inventors: Yi-Nien Su, Shu-Huei Suen, Jyu-Horng Shieh, Ru-Gun Liu
  • Publication number: 20200052122
    Abstract: Methods for manufacturing semiconductor structures are provided. The method includes forming a first masking layer over a substrate and forming a second masking layer over the first masking layer. The method includes forming a photoresist pattern over the second masking layer and patterning the second masking layer through the photoresist pattern. The method further includes diminishing the photoresist pattern and patterning the second masking layer and the first masking layer through the diminished photoresist pattern. The method further includes removing the diminished photoresist pattern and patterning the semiconductor substrate through the second masking layer and the first masking layer to form a fin structure. The method further includes forming a gate structure over the fin structure.
    Type: Application
    Filed: October 18, 2019
    Publication date: February 13, 2020
    Inventors: Ju-Wang HSU, Chih-Yuan TING, Tang-Xuan ZHONG, Yi-Nien SU, Jang-Shiang TSAI
  • Publication number: 20200006082
    Abstract: An embodiment method includes patterning a tin oxide layer to define a plurality of mandrels over a target layer; depositing a spacer layer over and along sidewalls of the plurality of mandrels; and patterning the spacer layer to provide a plurality of spacers on the sidewalls of the plurality of mandrels. The method further includes after patterning the spacer layer, removing the plurality of mandrels. The method further includes after removing the plurality of mandrels, patterning the target layer using the plurality of spacers.
    Type: Application
    Filed: September 14, 2018
    Publication date: January 2, 2020
    Inventor: Yi-Nien Su
  • Patent number: 10483397
    Abstract: A fin field effect transistor and method of forming the same. The fin field effect transistor includes a semiconductor substrate having a fin structure and between two trenches with top portions and bottom portions. The fin field effect transistor further includes shallow trench isolations formed in the bottom portions of the trenches and a gate electrode over the fin structure and the shallow trench isolation, wherein the gate electrode is substantially perpendicular to the fin structure. The fin field effect transistor further includes a gate dielectric layer along sidewalls of the fin structure and source/drain electrode formed in the fin structure.
    Type: Grant
    Filed: December 24, 2014
    Date of Patent: November 19, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Ju-Wang Hsu, Chih-Yuan Ting, Tang-Xuan Zhong, Yi-Nien Su, Jang-Shiang Tsai
  • Publication number: 20190237333
    Abstract: In some embodiments, a method of a semiconductor process includes conformally forming a spacer layer over a plurality of mandrels that are disposed over a mask layer, portions of the spacer layer disposed over opposing sidewalls of adjacent ones of the plurality of mandrels defining trenches therebetween, filling the trenches with a dummy material, and removing first portions of the dummy material in the trenches, thereby forming a plurality of openings in the dummy material. The method further includes filling the plurality of openings with a first material, removing a remaining portion of the dummy material in the trenches, and removing the plurality of mandrels after the removing the dummy material.
    Type: Application
    Filed: April 8, 2019
    Publication date: August 1, 2019
    Inventor: Yi-Nien Su
  • Patent number: 10276381
    Abstract: In some embodiments, a method of a semiconductor process includes conformally forming a spacer layer over a plurality of mandrels that are disposed over a mask layer, portions of the spacer layer disposed over opposing sidewalls of adjacent ones of the plurality of mandrels defining trenches therebetween, filling the trenches with a dummy material, and removing first portions of the dummy material in the trenches, thereby forming a plurality of openings in the dummy material. The method further includes filling the plurality of openings with a first material, removing a remaining portion of the dummy material in the trenches, and removing the plurality of mandrels after the removing the dummy material.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: April 30, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Yi-Nien Su
  • Patent number: 10109522
    Abstract: One or more techniques or systems for forming a semiconductor structure having a gap are provided herein. In some embodiments, a gap is formed between a first etch stop layer (ESL) and an ESL seal region. For example, the gap is formed by removing a portion of a low-k (LK) dielectric region above an oxide region and removing the oxide region. In some embodiments, the oxide region below the LK dielectric region facilitates removal of the LK dielectric region, at least because the oxide region enhances a bottom etch rate of a bottom of the LK dielectric region such that the bottom etch rate is similar to a wall etch rate of a wall of the LK dielectric region.
    Type: Grant
    Filed: August 22, 2016
    Date of Patent: October 23, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yi-Nien Su, Hsiang-Wei Lin
  • Publication number: 20180151363
    Abstract: In some embodiments, a method of a semiconductor process includes conformally forming a spacer layer over a plurality of mandrels that are disposed over a mask layer, portions of the spacer layer disposed over opposing sidewalls of adjacent ones of the plurality of mandrels defining trenches therebetween, filling the trenches with a dummy material, and removing first portions of the dummy material in the trenches, thereby forming a plurality of openings in the dummy material. The method further includes filling the plurality of openings with a first material, removing a remaining portion of the dummy material in the trenches, and removing the plurality of mandrels after the removing the dummy material.
    Type: Application
    Filed: January 10, 2018
    Publication date: May 31, 2018
    Inventor: Yi-Nien Su
  • Patent number: 9881794
    Abstract: In some embodiments, a method of a semiconductor process includes conformally forming a spacer layer over a plurality of mandrels that are disposed over a mask layer, portions of the spacer layer disposed over opposing sidewalls of adjacent ones of the plurality of mandrels defining trenches therebetween, filling the trenches with a dummy material, and removing first portions of the dummy material in the trenches, thereby forming a plurality of openings in the dummy material. The method further includes filling the plurality of openings with a first material, removing a remaining portion of the dummy material in the trenches, and removing the plurality of mandrels after the removing the dummy material.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: January 30, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Yi-Nien Su
  • Patent number: 9530728
    Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes forming an etch stop layer over a workpiece. The etch stop layer has an etch selectivity to a material layer of the workpiece of greater than about 4 to about 30. The method includes forming an insulating material layer over the etch stop layer, and patterning the insulating material layer using the etch stop layer as an etch stop.
    Type: Grant
    Filed: September 4, 2015
    Date of Patent: December 27, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Su-Jen Sung, Yi-Nien Su
  • Publication number: 20160358816
    Abstract: One or more techniques or systems for forming a semiconductor structure having a gap are provided herein. In some embodiments, a gap is formed between a first etch stop layer (ESL) and an ESL seal region. For example, the gap is formed by removing a portion of a low-k (LK) dielectric region above an oxide region and removing the oxide region. In some embodiments, the oxide region below the LK dielectric region facilitates removal of the LK dielectric region, at least because the oxide region enhances a bottom etch rate of a bottom of the LK dielectric region such that the bottom etch rate is similar to a wall etch rate of a wall of the LK dielectric region.
    Type: Application
    Filed: August 22, 2016
    Publication date: December 8, 2016
    Inventors: Yi-Nien Su, Hsiang-Wei Lin
  • Patent number: 9425091
    Abstract: One or more techniques or systems for forming a semiconductor structure having a gap are provided herein. In some embodiments, a gap is formed between a first etch stop layer (ESL) and an ESL seal region. For example, the gap is formed by removing a portion of a low-k (LK) dielectric region above an oxide region and removing the oxide region. In some embodiments, the oxide region below the LK dielectric region facilitates removal of the LK dielectric region, at least because the oxide region enhances a bottom etch rate of a bottom of the LK dielectric region such that the bottom etch rate is similar to a wall etch rate of a wall of the LK dielectric region.
    Type: Grant
    Filed: July 13, 2015
    Date of Patent: August 23, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yi-Nien Su, Hsiang-Wei Lin
  • Patent number: 9355894
    Abstract: An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a lower conductive feature in a lower low-k (LK) dielectric layer; a first etch stop layer (ESL) over the lower conductive feature, wherein the first ESL comprises a metal compound; an upper LK dielectric layer over the first ESL; and an upper conductive feature in the upper LK dielectric layer, wherein the upper conductive feature extends through the first ESL and connected to the lower conductive feature. The interconnect structure may further include a second ESL between the upper LK dielectric layer and the first ESL, or between the first ESL and the lower conductive feature, wherein the second ESL comprises a silicon compound.
    Type: Grant
    Filed: May 6, 2015
    Date of Patent: May 31, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Su-Jen Sung, Yi-Nien Su
  • Publication number: 20150380352
    Abstract: Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes forming an etch stop layer over a workpiece. The etch stop layer has an etch selectivity to a material layer of the workpiece of greater than about 4 to about 30. The method includes forming an insulating material layer over the etch stop layer, and patterning the insulating material layer using the etch stop layer as an etch stop.
    Type: Application
    Filed: September 4, 2015
    Publication date: December 31, 2015
    Inventors: Su-Jen Sung, Yi-Nien Su
  • Publication number: 20150318206
    Abstract: One or more techniques or systems for forming a semiconductor structure having a gap are provided herein. In some embodiments, a gap is formed between a first etch stop layer (ESL) and an ESL seal region. For example, the gap is formed by removing a portion of a low-k (LK) dielectric region above an oxide region and removing the oxide region. In some embodiments, the oxide region below the LK dielectric region facilitates removal of the LK dielectric region, at least because the oxide region enhances a bottom etch rate of a bottom of the LK dielectric region such that the bottom etch rate is similar to a wall etch rate of a wall of the LK dielectric region.
    Type: Application
    Filed: July 13, 2015
    Publication date: November 5, 2015
    Inventors: Yi-Nien Su, Hsiang-Wei Lin