Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package at least includes a redistribution layer, a semiconductor die, an interlink block, and a molding compound. The semiconductor die is disposed on the redistribution layer, and the interlink block is disposed on the redistribution layer and beside the semiconductor die. The interlink block includes an insulating encapsulant and through insulator vias penetrating through the insulating encapsulant. The molding compound disposed on the redistribution layer laterally wraps around the semiconductor die and the interlink block. The interlink block is spaced apart from the semiconductor die with the molding compound there-between. The through insulator vias are isolated from the molding compound by the insulating encapsulant.

Abstract: A package structure includes a supporting base, conductive pillars, a first semiconductor die, a second semiconductor die, a first adhesive material, a second adhesive material and an isolation structure. The conductive pillars are disposed in the supporting base, and protruding out from a top surface of the supporting base. The second semiconductor die is adjacent to the first semiconductor die, wherein the first and second semiconductor dies are disposed on the supporting base and electrically connected to the conductive pillars. The first adhesive material is disposed in between the first semiconductor die and the top surface of the supporting base, and partially covering the conductive pillars. The second adhesive material is disposed in between the second semiconductor die and the top surface of the supporting base, and partially covering the conductive pillars. The isolation structure prevents a bleeding of the first and second adhesive material to an adjacent semiconductor die.

Abstract: A package structure including at least one semiconductor die and a redistribution structure is provided. The semiconductor die is laterally encapsulated by an encapsulant, and the redistribution structure is disposed on the semiconductor die and the encapsulant and electrically connected with the semiconductor die. The redistribution structure includes signal lines and a pair of repair lines. The signal lines include a pair of first signal lines located at a first level, and each first signal line of the pair of first signal lines has a break that split each first signal line into separate first and second fragments. The pair of repair lines is located above the pair of first signal lines and located right above the break. Opposite ending portions of each repair line are respectively connected with the first and second fragments with each repair line covering the break in each first signal line.

Abstract: A package structure including at least one semiconductor die and a redistribution structure is provided. The semiconductor die is laterally encapsulated by an encapsulant, and the redistribution structure is disposed on the semiconductor die and the encapsulant and electrically connected with the semiconductor die. The redistribution structure includes signal lines and a pair of repair lines. The signal lines include a pair of first signal lines located at a first level, and each first signal line of the pair of first signal lines has a break that split each first signal line into separate first and second fragments. The pair of repair lines is located above the pair of first signal lines and located right above the break. Opposite ending portions of each repair line are respectively connected with the first and second fragments with each repair line covering the break in each first signal line.

Abstract: A lamination chuck for lamination of film materials includes a support layer and a top layer. The top layer is disposed on the support layer. The top layer includes a polymeric material having a Shore A hardness lower than a Shore hardness of a material of the support layer. The top layer and the support layer have at least one vacuum channel formed therethrough, vertically extending from a top surface of the top layer to a bottom surface of the support layer.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a redistribution layer (RDL) module, a first semiconductor module, an interconnection module, a second semiconductor module and a molding material. The first semiconductor module is disposed on the RDL module. The interconnection module is disposed on the RDL module. The second semiconductor module is disposed on the interconnection module. The molding material covers the RDL module and surrounds the first semiconductor module and the second semiconductor module. A top surface of the first semiconductor module and a top surface of the second semiconductor module are exposed by the molding material.

Abstract: A lamination chuck for lamination of film materials includes a support layer and a top layer. The top layer is disposed on the support layer. The top layer includes a polymeric material having a Shore A hardness lower than a Shore hardness of a material of the support layer. The top layer and the support layer have at least one vacuum channel formed therethrough, vertically extending from a top surface of the top layer to a bottom surface of the support layer.

Abstract: Interconnect structure packages (e.g., through silicon vias (TSV) packages, through interlayer via (TIV) packages) may be pre-manufactured as opposed to forming TIVs directly on a carrier substrate during a manufacturing process for a semiconductor die package at backend packaging facility. The interconnect structure packages may be placed onto a carrier substrate during manufacturing of a semiconductor device package, and a semiconductor die package may be placed on the carrier substrate adjacent to the interconnect structure packages. A molding compound layer may be formed around and in between the interconnect structure packages and the semiconductor die package.

Abstract: A workpiece chuck includes a supporting platform, a vacuum system, and a gas permeable buffer layer. The supporting platform has a supporting surface for holding a workpiece thereon. The vacuum system is disposed under and in gas communication with the supporting platform. The gas permeable buffer layer is disposed over the supporting platform and covers the supporting surface, wherein a hardness scale of the gas permeable buffer layer is smaller than a hardness scale of the supporting platform.

Abstract: A polishing pad, a polishing apparatus and a method of manufacturing a semiconductor package using the same are provided. In some embodiments, a polishing pad includes a sub-pad portion and a top pad portion over the sub-pad portion. The top pad portion includes a plurality of grooves having a first width and a plurality of openings having a second width different from the first width, and the openings are located in a center zone of the polishing pad.

Abstract: A lamination chuck for lamination of film materials includes a support layer and a top layer. The top layer is disposed on the support layer. The top layer includes a polymeric material having a Shore A hardness lower than a Shore hardness of a material of the support layer. The top layer and the support layer have at least one vacuum channel formed therethrough, vertically extending from a top surface of the top layer to a bottom surface of the support layer.

Abstract: A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.

Abstract: A package structure includes a die, a first redistribution circuit structure, a first redistribution circuit structure, a second redistribution circuit structure, an enhancement layer, first conductive terminals, and second conductive terminals. The first redistribution circuit structure is disposed on a rear side of the die and electrically coupled to thereto. The second redistribution circuit structure is disposed on an active side of the die and electrically coupled thereto. The enhancement layer is disposed on the first redistribution circuit structure. The first redistribution circuit structure is disposed between the enhancement layer and the die. The first conductive terminals are connected to the first redistribution circuit structure. The first redistribution circuit structure is between the first conductive terminals and the die. The second conductive terminals are connected to the second redistribution circuit structure.

Abstract: A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.

Abstract: A package structure includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, antenna elements and a first insulating film. The insulating encapsulant is encapsulating the at least one semiconductor die, the insulating encapsulant has a first surface and a second surface opposite to the first surface. The first redistribution layer is disposed on the first surface of the insulating encapsulant. The second redistribution layer is disposed on the second surface of the insulating encapsulant. The antenna elements are located over the second redistribution layer. The first insulating film is disposed in between the second redistribution layer and the antenna elements, wherein the first insulating film comprises a resin rich region and a filler rich region, the resin rich region is located in between the filler rich region and the second redistribution layer and separating the filler rich region from the second redistribution layer.

Abstract: A method includes encapsulating a device in an encapsulating material, planarizing the encapsulating material and the device, and forming a conductive feature over the encapsulating material and the device. The formation of the conductive feature includes depositing a first conductive material to from a first seed layer, depositing a second conductive material different from the first conductive material over the first seed layer to form a second seed layer, plating a metal region over the second seed layer, performing a first etching on the second seed layer, performing a second etching on the first seed layer, and after the first seed layer is etched, performing a third etching on the second seed layer and the metal region.

Abstract: A package structure includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, antenna elements and a first insulating film. The insulating encapsulant is encapsulating the at least one semiconductor die, the insulating encapsulant has a first surface and a second surface opposite to the first surface. The first redistribution layer is disposed on the first surface of the insulating encapsulant. The second redistribution layer is disposed on the second surface of the insulating encapsulant. The antenna elements are located over the second redistribution layer. The first insulating film is disposed in between the second redistribution layer and the antenna elements, wherein the first insulating film comprises a resin rich region and a filler rich region, the resin rich region is located in between the filler rich region and the second redistribution layer and separating the filler rich region from the second redistribution layer.

Abstract: A lamination chuck for lamination of film materials includes a support layer and a top layer. The top layer is disposed on the support layer. The top layer includes a polymeric material having a Shore A hardness lower than a Shore hardness of a material of the support layer. The top layer and the support layer have at least one vacuum channel formed therethrough, vertically extending from a top surface of the top layer to a bottom surface of the support layer.

Abstract: A package structure including at least one semiconductor die and a redistribution structure is provided. The semiconductor die is laterally encapsulated by an encapsulant, and the redistribution structure is disposed on the semiconductor die and the encapsulant and electrically connected with the semiconductor die. The redistribution structure includes signal lines and a pair of repair lines. The signal lines include a pair of first signal lines located at a first level, and each first signal line of the pair of first signal lines has a break that split each first signal line into separate first and second fragments. The pair of repair lines is located above the pair of first signal lines and located right above the break. Opposite ending portions of each repair line are respectively connected with the first and second fragments with each repair line covering the break in each first signal line.

Abstract: A package structure including at least one semiconductor die and a redistribution structure is provided. The semiconductor die is laterally encapsulated by an encapsulant, and the redistribution structure is disposed on the semiconductor die and the encapsulant and electrically connected with the semiconductor die. The redistribution structure includes signal lines and a pair of repair lines. The signal lines include a pair of first signal lines located at a first level, and each first signal line of the pair of first signal lines has a break that split each first signal line into separate first and second fragments. The pair of repair lines is located above the pair of first signal lines and located right above the break. Opposite ending portions of each repair line are respectively connected with the first and second fragments with each repair line covering the break in each first signal line.