Abstract: Embodiments disclosed herein relate to using an implantation process and a melting anneal process performed on a nanosecond scale to achieve a high surface concentration (surface pile up) dopant profile and a retrograde dopant profile simultaneously. In an embodiment, a method includes forming a source/drain structure in an active area on a substrate, the source/drain structure including a first region comprising germanium, implanting a first dopant into the first region of the source/drain structure to form an amorphous region in at least the first region of the source/drain structure, implanting a second dopant into the amorphous region containing the first dopant, and heating the source/drain structure to liquidize and convert at least the amorphous region into a crystalline region, the crystalline region containing the first dopant and the second dopant.

Abstract: Provided are a handover method, a handover device, and a network system. The handover method includes: receiving cell information of a second cell sent by a second network element, wherein the second cell is a cell managed by the second network element, and the cell information includes predicted cell load information of the second cell; and sending a handover instruction to a terminal in a case where the cell information satisfies a preset condition, wherein the handover instruction is used for instructing the terminal to perform handover to the second cell, and the case where the cell information satisfies the preset condition at least indicates that the predicted cell load information of the second cell is lower than a configured first threshold.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: Provided are a semiconductor device and a method for manufacturing the same, and a semiconductor package. The semiconductor device includes a die stack and a cap substrate. The die stack includes a first die, second dies stacked on the first die, and a third die stacked on the second dies. The first die includes first through semiconductor vias. Each of the second dies include second through semiconductor vias. The third die includes third through semiconductor vias. The cap substrate is disposed on the third die of the die stack. A sum of a thickness of the third die and a thickness of the cap substrate ranges from about 50 ?m to about 80 ?m.

Abstract: A separation apparatus suitable for separating plastic and silicone in a composite material includes a storage tank configured to store a hydrocarbon solvent, and a reaction tank fluidly connected to the storage tank and having a reaction space for placement of the composite material therein and for receiving the hydrocarbon solvent from the storage tank such that the composite material is immersed in the hydrocarbon solvent for separating the plastic and the silicone in the composite material. The plastic and the silicone in the composite material are insoluble in the hydrocarbon solvent.

Abstract: An intra prediction method by using cross component liner prediction mode (CCLM), includes: determining a luma block corresponding to a current chroma block; obtaining luma reference samples of the luma block based on determining L available chroma reference samples of the current chroma block, wherein the obtained luma reference samples of the luma block are down-sampled luma reference samples; calculating linear model coefficients based on the luma reference samples and chroma reference samples that correspond to the luma reference samples; and obtaining a prediction for the current chroma block based on the linear model coefficients and values of a down-sampled luma block of the luma block.

Abstract: A method of correcting a misalignment of a wafer on a wafer holder and an apparatus for performing the same are disclosed. In an embodiment, a semiconductor alignment apparatus includes a wafer stage; a wafer holder over the wafer stage; a first position detector configured to detect an alignment of a wafer over the wafer holder in a first direction; a second position detector configured to detect an alignment of the wafer over the wafer holder in a second direction; and a rotational detector configured to detect a rotational alignment of the wafer over the wafer holder.

Abstract: Disclosed is a semiconductor fabrication method. The method includes forming a gate stack in an area previously occupied by a dummy gate structure; forming a first metal cap layer over the gate stack; forming a first dielectric cap layer over the first metal cap layer; selectively removing a portion of the gate stack and the first metal cap layer while leaving a sidewall portion of the first metal cap layer that extends along a sidewall of the first dielectric cap layer; forming a second metal cap layer over the gate stack and the first metal cap layer wherein a sidewall portion of the second metal cap layer extends further along a sidewall of the first dielectric cap layer; forming a second dielectric cap layer over the second metal cap layer; and flattening a top layer of the first dielectric cap layer and the second dielectric cap layer using planarization operations.

Abstract: An adhesive composition is provided. The adhesive composition comprises the following components: (a) a polyacid polymer aqueous dispersion, wherein the polyacid polymer contains 50%˜100% by weight of one or more ethylenically unsaturated mono- or dicarboxylic acid/anhydrides; (b) a hydroxyl group-containing acrylic copolymer emulsion, wherein the hydroxyl group-containing acrylic copolymer is obtained from polymerizing a monomer mixture which contains 0.1-10% hydroxyl group-containing monomer, 0.1% to 20% weight unsaturated carboxylic acid and 30%-90% acrylic monomer, wherein the solid weight ratio of the above components (a) and (b) is 0.1:100 to 10:100, based on the solids of the components (a) and (b).

Abstract: Provided are a cell strain for producing a biosimilar drug of Ustekinumab and a production method therefor. Specifically, provided is a Chinese hamster ovary cell S cell strain. The cell strain expresses a full human monoclonal antibody directed against the P40 subunit shared by human IL-12 and human IL-23. The fully human monoclonal antibody directed against the P40 subunit shared by human IL-12 and human IL-23 is a biosimilar drug of Ustekinumab, which not only exhibits high consistency with Ustekinumab in pre-clinical research, but also passes pharmacokinetic bioequivalence and safety similarity evaluation in clinical research. The biosimilar drug of Ustekinumab is the first one that has entered clinical trials in China, is the only one that has completed the I stage clinical trial, and is also one of the biosimilar drugs of Ustekinumab, which has the fastest progress in new drug application in the world.

Abstract: A device-verification system is configured to verify the authenticity of an electronic device using a digital signature of the electronic device verified by a certificate authority. In some examples, the electronic device includes a NFC tag storing device hardware information, device public and private keys, and a device digital signature ciphertext. A user may utilize a personal device to read the information from the NFC tag and the personal device may include a software application configured to communicate the information to a cloud-based certificate authority. The certificate authority may include a distributed system (e.g., a blockchain ledger) utilized to verify, store, and subsequently retrieve data corresponding to the electronic device. The certificate authority is configured to utilize the device digital signature to verify the authenticity of the device.

Abstract: A method includes forming a gate stack on a first portion of a semiconductor substrate, removing a second portion of the semiconductor substrate on a side of the gate stack to form a recess, growing a semiconductor region starting from the recess, implanting the semiconductor region with an impurity, and performing a melt anneal on the semiconductor region. At least a portion of the semiconductor region is molten during the melt anneal.

Abstract: A resin matrix composition is provided in the present invention. The resin matrix composition includes an epoxy resin, a polysulfone engineering plastic, a modified polyetherimide and an amine curing agent. The modified polyetherimide is formed from a nucleophilic compound and polyetherimide. The nucleophilic compound has a nucleophile such as hydroxyl group, sulfhydryl group, carboxyl group and/or amine group. Therefore, a resin matrix with two phase separation of island phase and co-continuous phase is formed. The resin matrix can have both great flexural strength and toughness. Moreover, the resin matrix has suitable viscosity, such that it is appropriate for impregnating carbon fiber to produce prepreg and carbon fiber composites.

Abstract: A device includes a semiconductive fin having source and drain regions and a channel region between the source and drain regions, a gate feature over the channel region of the semiconductive fin, a first spacer around the gate feature, source and drain features respectively in the source and drain regions of the semiconductive fin, an interlayer dielectric layer around the first spacer, and a void between the first spacer and the interlayer dielectric layer and spaced apart from the gate feature and the source and drain features.

Abstract: An assembly, an apparatus, and a method for machining a mechanical part. The assembly includes a parallel robot adapted to be mounted onto a platform under the mechanical part to be machined. The assembly includes a servo spindle mounted on the parallel robot and configured to drive a machining tool to rotate. The parallel robot is configured to drive the servo spindle to translate along the one or more axes with respect to the parallel robot. During the machining of the mechanical part, the parallel robot may drive the servo spindle to translate along the one or more axes under the mechanical part, such that the machining tool may cut out the required shapes and characteristics at a bottom side of the mechanical part.

Abstract: A detection system and method for the migrating cell is provided. The system is configured to detect a migrating cell combined with an immunomagnetic bead. The system includes a platform, a microchannel, a magnetic field source, a coherent light source and an optical sensing module. The microchannel is configured to allow the migrating cell to flow in it along a flow direction. The magnetic field source is configured to provide magnetic force to the migrating cell combined with the immunomagnetic bead. The magnetic force includes at least one magnetic force component and the magnetic force component is opposite to the flow direction of the microchannel. The coherent light source is configured to provide the microchannel with the coherent light. The optical sensing module is configured to receive the interference light caused by the coherent light being reflected by the sample inside the microchannel.

Abstract: A method includes implanting impurities in a semiconductor substrate to form an etch stop region within the semiconductor substrate; forming a transistor structure on a front side of the semiconductor substrate; forming a front-side interconnect structure over the transistor structure; performing a thinning process on a back side of the semiconductor substrate to reduce a thickness of the semiconductor substrate, wherein the thinning process is slowed by the etch stop region; and forming a back-side interconnect structure over the back side of the semiconductor substrate.

Abstract: A video decoding method includes obtaining split information indicating whether to split a current block, splitting the current block into two or more lower blocks when the split information indicates to split the current block, obtaining encoding order information indicating an encoding order of the lower blocks of the current block, determining a decoding order of the lower blocks according to the encoding order information, and decoding the lower blocks according to the decoding order.