Patents by Inventor Yin Lin
Yin Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12237417Abstract: A FinFET structure with a gate structure having two notch features therein and a method of forming the same is disclosed. The FinFET notch features ensure that sufficient spacing is provided between the gate structure and source/drain regions of the FinFET to avoid inadvertent shorting of the gate structure to the source/drain regions. Gate structures of different sizes (e.g., different gate widths) and of different pattern densities can be provided on a same substrate and avoid inadvertent of shorting the gate to the source/drain regions through application of the notched features.Type: GrantFiled: December 5, 2022Date of Patent: February 25, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chang-Yin Chen, Che-Cheng Chang, Chih-Han Lin, Horng-Huei Tseng
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Publication number: 20250058324Abstract: An automated molecular operating system includes at least one centrifuge tube carrying module, a transport module, a plurality of temperature control modules, a capping module, a magnetic field module and an automated processing module. The automated processing module is electrically connected to the transport module, the temperature control modules, the capping module and the magnetic field module, and controls the transport module to move the centrifuge tube carrying module, so that a centrifuge tube contained in the centrifuge tube carrying module makes a reaction in the temperature control modules, and the magnetic field module or the capping module is provided to the centrifuge tube according to requirements, such that a specimen in the centrifuge tube can be automatically subjected to nucleic acid extraction, nucleic acid amplification, primer labeling, reverse transcription or a combination thereof, thereby reducing manual operation errors and increasing the ease of operation.Type: ApplicationFiled: November 17, 2023Publication date: February 20, 2025Inventors: Yi-Fang CHEN, Suz-Kai HSIUNG, Chun-Wei HUANG, Yin-Lin LI, Yu-Ying WU
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Publication number: 20250052511Abstract: A vapor chamber heatsink assembly, under vacuum, having a working fluid therein, comprising a plurality of heatsink fins and a vapor chamber is provided. The vapor chamber comprises an upper and lower casing having an upper and lower chamber surface, respectively. The upper and lower chamber surfaces define a plurality of obstructers forming a plurality of braided channels therearound. When heat from a greater temperature heat source and a lower temperature heat source is applied to respective contact surfaces of the lower casing, via the plurality of obstructers and braided channels, respectively, the working fluid and liquid vapor slugs/bubbles travel therethrough, providing an effective phase change mechanism to the greater temperature heat source, while concurrently, hindering agglomeration of working fluid thereto. An effective phase change mechanism is also concurrently provided to the lower temperature heat source due to the non-agglomeration of working fluid to the greater temperature heat source.Type: ApplicationFiled: October 24, 2024Publication date: February 13, 2025Inventors: Chia yu Lin, Shan yin Cheng, Chien ting Liu
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Publication number: 20250056852Abstract: A method includes forming first nanostructures over a substrate, then forming second nanostructures over the plurality of first nanostructures. A first source/drain region is epitaxially grown adjacent the first nanostructures, and a second source/drain region is epitaxially grown over the first source/drain region and adjacent the second nanostructures. An implantation process is performed to implant impurities into the second source/drain region, wherein the implantation process forms an amorphous region within the second source/drain region. At least one rapid thermal process is performed on the second source/drain region, wherein performing each rapid thermal process recrystallizes a portion of the amorphous region.Type: ApplicationFiled: August 10, 2023Publication date: February 13, 2025Inventors: Yu-Chang Lin, Liang-Yin Chen, Chi On Chui
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Publication number: 20250048763Abstract: Various embodiments of the present disclosure are directed towards an image sensor with a passivation layer for dark current reduction. A device layer overlies a substrate. Further, a cap layer overlies the device layer. The cap and device layers and the substrate are semiconductor materials, and the device layer has a smaller bandgap than the cap layer and the substrate. For example, the cap layer and the substrate may be silicon, whereas the device layer may be or comprise germanium. A photodetector is in the device and cap layers, and the passivation layer overlies the cap layer. The passivation layer comprises a high k dielectric material and induces formation of a dipole moment along a top surface of the cap layer.Type: ApplicationFiled: October 21, 2024Publication date: February 6, 2025Inventors: Hsiang-Lin Chen, Yi-Shin Chu, Yin-Kai Liao, Sin-Yi Jiang, Kuan-Chieh Huang, Jhy-Jyi Sze
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Publication number: 20250044708Abstract: In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.Type: ApplicationFiled: October 18, 2024Publication date: February 6, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ru-Gun LIU, Huicheng CHANG, Chia-Cheng CHEN, Jyu-Horng SHIEH, Liang-Yin CHEN, Shu-Huei SUEN, Wei-Liang LIN, Ya Hui CHANG, Yi-Nien SU, Yung-Sung YEN, Chia-Fong CHANG, Ya-Wen YEH, Yu-Tien SHEN
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Publication number: 20250041264Abstract: The object of the present disclosure is to provide a method for treating diabetes by using an Antrodia camphorata compound, wherein the Antrodia camphorata compound is shown in the following formula 1: or the pharmacologically acceptable salts of the formula 1.Type: ApplicationFiled: January 24, 2024Publication date: February 6, 2025Inventors: Mao-tien Kuo, Yin-yu Kuo, Hui-ling Tseng, Tai-lin Tseng, Wan-ping Tseng, Yi-ling Ye, Li-shian Shi, Ya-hong Lin
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Patent number: 12218196Abstract: A method includes depositing a multi-layer stack on a semiconductor substrate, the multi-layer stack including a plurality of sacrificial layers that alternate with a plurality of channel layers; forming a dummy gate on the multi-layer stack; forming a first spacer on a sidewall of the dummy gate; performing a first implantation process to form a first doped region, the first implantation process having a first implant energy and a first implant dose; performing a second implantation process to form a second doped region, where the first doped region and the second doped region are in a portion of the channel layers uncovered by the first spacer and the dummy gate, the second implantation process having a second implant energy and a second implant dose, where the second implant energy is greater than the first implant energy, and where the first implant dose is different from the second implant dose.Type: GrantFiled: February 14, 2022Date of Patent: February 4, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yu-Chang Lin, Chun-Hung Wu, Liang-Yin Chen, Huicheng Chang, Yee-Chia Yeo
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Patent number: 12218216Abstract: A semiconductor device and methods of fabricating the same are disclosed. The semiconductor device includes a substrate, a fin structure with a fin top surface disposed on the substrate, a source/drain (S/D) region disposed on the fin structure, a gate structure disposed on the fin top surface, and a gate spacer with first and second spacer portions disposed between the gate structure and the S/D region. The first spacer portion extends above the fin top surface and is disposed along a sidewall of the gate structure. The second spacer portion extends below the fin top surface and is disposed along a sidewall of the S/D region.Type: GrantFiled: August 9, 2023Date of Patent: February 4, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Liang Lu, Chang-Yin Chen, Chih-Han Lin, Chia-Yang Liao
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Patent number: 12210023Abstract: The present invention discloses an ?-synuclein sensing film, a manufacturing method and a use thereof. The ?-synuclein sensing film comprises a base plate and plural ?-synuclein sensing polymers polymerized on the base plate. Each of the plural ?-synuclein sensing polymers has plural ?-synuclein detection holes on a surface thereof. The plural ?-synuclein sensing polymers are manufactured by electropolymerization, and the plural ?-synuclein detection holes are imprinted by an ?-synuclein peptide. A sample to be tested can be applied to the ?-synuclein sensing film for detecting the ?-synuclein therein.Type: GrantFiled: May 24, 2021Date of Patent: January 28, 2025Assignee: National University of KaohsiungInventors: Hung-Yin Lin, Shyh-Chyang Luo, Mei-Hwa Lee, Zi-Lin Su
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Patent number: 12211750Abstract: Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a substrate. The semiconductor device also includes a first fin and a second fin over the substrate. The semiconductor device further includes a first gate electrode and a second gate electrode traversing over the first fin and the second fin, respectively. In addition, the semiconductor device includes a gate dielectric layer between the first fin and the first gate electrode and between the second fin and the second gate electrode. Further, the semiconductor device includes a dummy gate electrode over the substrate, and the dummy gate electrode is between the first gate electrode and the second gate electrode. An upper portion of the dummy gate electrode is wider than a lower portion of the dummy gate electrode.Type: GrantFiled: June 24, 2022Date of Patent: January 28, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Che-Cheng Chang, Chang-Yin Chen, Jr-Jung Lin, Chih-Han Lin, Yung-Jung Chang
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Publication number: 20250030258Abstract: An electronic pendant for pet includes a pendant body, a light belt, a battery management module, and a display screen. The pendant body is provided with an accommodated cavity for receiving a battery for supplying power, an outer edge of the pendant body is provided with a transparent structure that can transmit light. The light strip is fixed in the transparent structure and is electrically connected with the battery. The battery management module includes a processor and an electricity meter, in which the electricity meter is electrically connected to the battery to measure the remaining electric quantity of the battery, and the processor is electrically connected to the electricity meter to output a measurement result of the electricity meter. The display screen is arranged on the front surface of the pendant body and is electrically connected to the processor to display the measurement result of the electricity meter.Type: ApplicationFiled: July 18, 2023Publication date: January 23, 2025Inventor: Yin Lin
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Patent number: 12205840Abstract: A horizontally oriented calibration jig for a wafer gripper arm of an ion implanter is disclosed. The calibration jig is mounted within the process chamber of the ion implanter. The calibration jig includes a mounting plate that spans a diameter of the wafer gripper arm, a support stand passing through the mounting plate, and a calibration plate at a bottom end of the support stand. The perimeter of the calibration plate includes a plurality of notches. The calibration plate is rotated. If any finger of the wafer gripper arm falls into a notch, the rotating calibration plate stops. The finger is then adjusted until it does not fall into a notch.Type: GrantFiled: August 17, 2022Date of Patent: January 21, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Lung-Yin Tang, Tsung-Min Lin, Hsin-Sheng Liang
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Publication number: 20250019426Abstract: The present disclosure relates to an anti-glucose-regulated protein 78 (GRP78) antibody or an antigen-binding fragment thereof. The present disclosure also relates to a method for treating and/or preventing a disease and/or disorder caused by or related to GRP78 activity or signaling, and a method or kit for detecting GRP78 or a cancer in a sample.Type: ApplicationFiled: July 3, 2024Publication date: January 16, 2025Applicant: UCT BIOSCIENCE CO., LTD.Inventors: CHIA-CHENG WU, YA-WEI TSAI, TZU-YIN LIN, CHIA-HSIANG LO
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Patent number: 12152969Abstract: Provided is a method for preparing a tissue section, including treating a tissue specimen with a clearing agent and at least one labeling agent to obtain a cleared and labeled tissue specimen; generating a three-dimensional (3D) image of the cleared and labeled tissue specimen; performing an image slicing procedure on the 3D image to generate a plurality of two-dimensional (2D) images; identifying a target 2D image among the plurality of 2D images to obtain a distance value of D1, which indicates the distance between the target 2D image and a predetermined surface of the 3D image; preparing a hardened tissue specimen from the cleared and labeled tissue specimen; and cutting the hardened tissue specimen near a predetermined site to obtain a tissue section, wherein the distance between the predetermined site and a surface of the hardened tissue specimen corresponding to the predetermined surface of the 3D image is D1.Type: GrantFiled: January 4, 2021Date of Patent: November 26, 2024Inventors: Ann-Shyn Chiang, Dah-Tsyr Chang, I-Ching Wang, Jia-Ling Yang, Shun-Chi Wu, Yen-Yin Lin, Yu-Chieh Lin
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Patent number: 12130271Abstract: A gas sensor network system provides near real-time monitoring of fugitive emissions of VOC compounds in chemical plants and facilities. The present disclosure provides a sensor placement method which determines where to place sensors within a facility. The sensor placement method includes obtaining plant layout, gas composition, meteorological conditions and/or other types of information regarding a facility, determining the types of gas and ancillary sensors needed, and generating the minimum detection distances required based on the sensitivities of the sensors to the gas compounds involved. And, then calculating the minimal number of sensors required for each sensor type with optimized sensor locations to ensure best coverage of potentially leaking components within the facility.Type: GrantFiled: May 22, 2020Date of Patent: October 29, 2024Assignee: Molex, LLCInventors: Eben Daniel Thoma, Alexander S. Chernyshov, Wenfeng Peng, Ling-Yin Lin, Jingxue Xu
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Publication number: 20240339383Abstract: An electronic device and a method of manufacturing an electronic device are provided. The electronic device includes an electronic component, a carrier, and a lead. The electronic component has a lateral surface. The carrier supports the electronic component. The lead is electrically connected to the electronic component and disposed adjacent to the lateral surface of the electronic component. The carrier and the lead are configured to block an electromagnetic wave between the electronic component and an external of the electronic device.Type: ApplicationFiled: April 7, 2023Publication date: October 10, 2024Applicant: Advanced Semiconductor Engineering, Inc.Inventors: Ko-Pu WU, Chih-Hung HSU, Chin Li HUANG, Chieh-Yin LIN, Yuan-Chun CHEN, Kai-Sheng PAI
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Patent number: 12114573Abstract: A method for manufacturing a thermoelectric polymer film includes steps as follows. A conductive polymer liquid and a plurality of carbon nanotubes are mixed to form a mixture. The mixture is coated on a substrate to form a film precursor. Two electrode parts are arranged on the film precursor. An electric field is applied to the film precursor through the two electrode parts at a room temperature, so as to change an arrangement of the plurality of carbon nanotubes, such that the thermoelectric polymer film is formed.Type: GrantFiled: March 3, 2022Date of Patent: October 8, 2024Assignee: National Cheng Kung UniversityInventors: Chia-Yun Chen, Kuan-Yi Kuo, Po-Hsuan Hsiao, Yi-Yin Lin
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Publication number: 20240302579Abstract: An electronic device is provided. The electronic device includes a substrate, a first light-shielding layer, a second light-shielding layer, a third light-shielding layer and an optical sensing element. The first light-shielding layer is disposed on the substrate and has a first opening. The second light-shielding layer is disposed on the first light-shielding layer and has a second opening. The third light-shielding layer is disposed on the second light-shielding layer and has a third opening. The optical sensing element is disposed on the substrate, and overlapped with the first opening. In addition, in a top-view diagram, centers of the first opening, the second opening and the third opening are separated from each other along a first direction, and the first direction is a line connecting a center of the first opening and a center of the third opening.Type: ApplicationFiled: May 20, 2024Publication date: September 12, 2024Inventors: Te-Yu LEE, Yu-Tsung LIU, Wei-Ju LIAO, Po-Hsin LIN, Chao-Yin LIN
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Publication number: 20240301749Abstract: A clamping member is adapted for being mounted on a blind unit that extends along a longitudinal direction, and for a pull cord to pass therethrough. The blind unit includes a plurality of blind holes spaced apart from one another along the longitudinal direction and extending through the blind unit. The clamping member includes a plug block that is configured for being mounted in one of the blind holes and that defines a through hole for the pull cord to pass therethrough, and at least one clamping slot that communicates with the through hole, that extends along a transverse direction which is perpendicular to the longitudinal direction, and that is configured for clamping the pull cord to limit movement of the pull cord. The clamping slot has a communicating end proximate to and communicating with the through hole, and a clamping end distal from the through hole and closed.Type: ApplicationFiled: August 2, 2023Publication date: September 12, 2024Inventor: Ya-Yin LIN