Abstract: A physical host machine of a public cloud system includes a set of processing units for executing instructions stored in non-transitory machine readable media. The physical host machine also includes a physical network interface cars (PNIC) and a non-transitory machine readable medium that stores a data compute node (DCN). The DCN includes first and second applications, first and second logical interfaces, a network stack, and a managed forwarding element (MFE). The first application is connected to the pNIC through the network stack, the first logical interface, and the MFE. The second application is connected to the PNIC through the network stack, the second logical interface, and the MFE.

Abstract: A data compute node executes (i) a set of tenant applications connected to a third party overlay network, (ii) a set of network manager applications, and (iii) a managed forwarding element that includes a pair of overlay and underlay network virtual adapters. A packet that is received from a network manager application and addressed to an underlay network destination is sent to the underlay network destination address through a physical NIC of the host without network address translation or encapsulation. A packet that is received from a tenant application and addressed to an underlay network destination is subject to SNAT and is sent to the underlay network destination address. A packet that is received from a tenant application and is addressed an overlay destination address is encapsulated with the header of the overlay network and is sent to the overlay network destination address through the underlay virtual adapter.

Abstract: Uses of pharmaceutical compositions comprising berberine for treatment of dermatologic toxicities and other skin disorders.

Abstract: A vortex laser generation device in a degenerate cavity with a spiral phase element and a vortex laser generation method are provided. The vortex laser generation device has a degenerate cavity, and the degenerate cavity has a resonator mirror, a gain medium, an optical element, and an output coupler. The off-axis beams are formed in multiple pass transverse modes to resonate by disposing an optical element in the degenerate cavity, so that a vortex laser with orbital angular momentum can be generated.

Abstract: A bispecific anti-Globo H antibody includes an anti-Globo H antibody that binds specifically to Globo H; and a T-cell targeting domain fused to a CH3 domain of a heavy chain of the anti-Globo H antibody, wherein the T-cell targeting domain binds specifically to an antigen on T-cells; and wherein the anti-Globo H antibody comprises mutations at an effector binding site such that the bispecific anti-Globo H antibody has a diminished effector function. The T-cell targeting domain is a ScFv or Fab from an anti-CD3 antibody.

Abstract: An asymmetric heterodimeric antibody includes a knob structure formed in a CH3 domain of a first heavy chain; a hole structure formed in a CH3 domain of a second heavy chain, wherein the hole structure is configured to accommodate the knob structure so that a heterodimeric antibody is formed; and a T-cell targeting domain fused to the CH3 domain of the first heavy chain or the second heavy chain, wherein the T-cell targeting domain binds specifically to an antigen on the T-cell. The T-cell targeting domain is a ScFv or Fab derived from an anti-CD3 antibody. The asymmetric heterodimeric antibody may have L234A and L235A mutations or L235A and G237A such that its effector binding is compromised.

Abstract: A method includes providing a semiconductor substrate having first and second regions that are doped with first and second dopants respectively. The first and second dopants are of opposite types. The method further includes epitaxially growing a first semiconductor layer that is doped with a third dopant. The first and third dopants are of opposite types. The method further includes depositing a dielectric hard mask (HM) layer over the first semiconductor layer; patterning the dielectric HM layer to have an opening over the first region; extending the opening towards the semiconductor substrate; and epitaxially growing a second semiconductor layer in the opening. The second semiconductor layer is doped with a fourth dopant. The first and fourth dopants are of a same type. The method further includes removing the dielectric HM layer; and performing a first CMP process to planarize both the first and second semiconductor layers.

Abstract: An apparatus for performing chemical mechanical polish on a wafer includes a polishing head that includes a retaining ring. The polishing head is configured to hold the wafer in the retaining ring. The retaining ring includes a first ring having a first hardness, and a second ring encircled by the first ring, wherein the second ring has a second hardness smaller than the first hardness.

Abstract: A safety lift cord device includes a safety guard adapted to be attached to a blind shade of a window blind, and a lift cord extending vertically in a lengthwise direction in a cord running section of the guard. The cord running section has a plurality of guard units, each having first and second front segments which are disposed forwardly of and intersect the lift cord, and first and second rear segments which are disposed rearwardly of and intersect the lift cord such that a penetrating hole is defined among the segments. It is not feasible for a child to reach and pull the lift cord out from the penetrating holes.

Abstract: Methods to use medical imaging to monitor the molecule penetration into CNS during ultrasound-mediated delivery are disclosed. The method states a two-step process to predict the amount of molecular penetration which is based on the observation of medical imaging. The first is to propose a unified exposure input to unify the exposure condition so as to build a transferred relation to imaging index. The second is to propose a unified imaging index to unify the imaging readout so as to build a reliable transferred relation to molecular concentration. Linking these two, the molecular penetration induced by ultrasound irradiation can be estimated from medical imaging with ultrasound exposure conditions and molecular sizes.

Abstract: A method includes providing a semiconductor substrate having first and second regions that are doped with first and second dopants respectively. The first and second dopants are of opposite types. The method further includes epitaxially growing a first semiconductor layer that is doped with a third dopant. The first and third dopants are of opposite types. The method further includes depositing a dielectric hard mask (HM) layer over the first semiconductor layer; patterning the dielectric HM layer to have an opening over the first region; extending the opening towards the semiconductor substrate; and epitaxially growing a second semiconductor layer in the opening. The second semiconductor layer is doped with a fourth dopant. The first and fourth dopants are of a same type. The method further includes removing the dielectric HM layer; and performing a first CMP process to planarize both the first and second semiconductor layers.

Abstract: A method for preventing or treating immunoinflammatory dermal disorders is provided.

Abstract: A data writing method, a memory control circuit unit and a memory storage apparatus are provided. The method includes: receiving a first write command and first data corresponding to the first write command, and writing the first data into a third physical erasing unit in first physical erasing units; and if a usage frequency of a fourth physical erasing unit in the first physical erasing units is less than a predetermined value, performing a data arrangement operation corresponding to the first write command to copy second data stored by the fourth physical to at least one of second physical erasing units.

Abstract: A semiconductor device such as a Zener diode includes a first semiconductor material of a first conductivity type and a second semiconductor material of a second conductivity type in contact with the first semiconductor material to form a junction therebetween. A first oxide layer is disposed over a portion of the second semiconductor material such that a remaining portion of the second semiconductor material is exposed. A polysilicon layer is disposed on the exposed portion of the second semiconductor material and a portion of the first oxide layer. A first conductive layer is disposed on the polysilicon layer. A second conductive layer is disposed on a surface of the first semiconductor material opposing a surface of the first semiconductor material in contact with the second semiconductor material.

Abstract: A display device includes a supporting frame, a display panel, an optical film assembly, and a light-penetrated adhesive member. The supporting frame includes a first supporting portion, and the display panel is disposed on the supporting frame. The display panel includes a pixel region and a non-pixel region, and the non-pixel region is disposed outside of the pixel region. The optical film assembly is partially disposed between the first supporting portion and the display panel. The light-penetrated adhesive member is disposed between the first supporting portion of the supporting frame and the optical film assembly. The light-penetrated adhesive member includes a first portion disposed corresponding to the non-pixel region and a second portion disposed corresponding to the pixel region. The configuration can achieve the narrow border design, provide a sufficient structural strength, or improve the light leakage or shadow issue at the edge of the active area.

Abstract: A method includes providing a semiconductor substrate having first and second regions that are doped with first and second dopants respectively. The first and second dopants are of opposite types. The method further includes epitaxially growing a first semiconductor layer that is doped with a third dopant. The first and third dopants are of opposite types. The method further includes depositing a dielectric hard mask (HM) layer over the first semiconductor layer; patterning the dielectric HM layer to have an opening over the first region; extending the opening towards the semiconductor substrate; and epitaxially growing a second semiconductor layer in the opening. The second semiconductor layer is doped with a fourth dopant. The first and fourth dopants are of a same type. The method further includes removing the dielectric HM layer; and performing a first CMP process to planarize both the first and second semiconductor layers.

Abstract: Among other things, one or more techniques and/or systems are provided for cleaning a polishing module of a semiconductor polishing apparatus. Purge air flow can be supplied into the polishing module (e.g., directed towards a polishing unit, a shield, and/or other polishing components) to create turbulence air flow within the polishing module. An auxiliary exhaust can be invoked to exhaust one or more particulates removed from the polishing module by the turbulence air flow. A purge air flow cycle can be performed by cycling the purge air flow and the auxiliary exhaust between on and off states. One or more purge air flow cycles can be performed during a main air flow cycle where laminar air flow is supplied into the polishing module and exhausted using a main exhaust. In this way, one or more particulates can be cleaned from the polishing module.

Abstract: A data writing method, a memory control circuit unit and a memory storage apparatus are provided. The method includes: receiving a first write command and first data corresponding to the first write command, and writing the first data into a third physical erasing unit in first physical erasing units; and if a usage frequency of a fourth physical erasing unit in the first physical erasing units is less than a predetermined value, performing a data arrangement operation corresponding to the first write command to copy second data stored by the fourth physical to at least one of second physical erasing units.

Abstract: The present invention provides a high-dynamic-range sensing device and the sensing method thereof. The high-dynamic-range sensing device includes a control unit and sensing units with different sensing ranges. In the sensing method, the sensing units give sensing values, and then the control unit compares the sensing values and the upper sensing limit of the sensing units, respectively. When a sensing value is equal to the upper sensing limit, the control unit rejects the sensing value or interrupts the sensing of the sensing unit thereof. Thereby, the sensing device quickly excludes the sensing units which obtain saturated signals and their sensing values and thus switches between the alternative sensing units with different sensing ranges or picks up the optimum one of the sensing values.

Abstract: The present invention provides amphiphilic telodendrimers that aggregate to form nanocarriers characterized by a hydrophobic core and a hydrophilic exterior. The nanocarrier core may include amphiphilic functionality such as cholic acid or cholic acid derivatives, and the exterior may include branched or linear poly(ethylene glycol) segments. Nanocarrier cargo such as hydrophobic drugs and other materials may be sequester in the core via non-covalent means or may be covalently bound to the telodendrimer building blocks. Telodendrimer structure may be tailored to alter loading properties, interactions with materials such as biological membranes, and other characteristics.