Abstract: A light-emitting device includes an epitaxial light-emitting structure formed on a substrate, a first electrode and a second electrode. The epitaxial light-emitting structure sequentially includes: a first type semiconductor layer including an Al component and electrically connected to the first electrode; an active layer; a second type semiconductor layer electrically connected to the second electrode; a first recess extending from the second type semiconductor layer to the first type semiconductor layer and having a projected area on the substrate ranging from 20% to 70% of that of the epitaxial light-emitting structure; and a second recess extending from the first type semiconductor layer toward the substrate. A light-emitting apparatus is also disclosed.

Abstract: A light-emitting device includes a substrate, a first type semiconductor layer, a protrusion, and a first reflection structure. The first type semiconductor layer is disposed on a surface of the substrate, and has a surface that has first and second conductive regions. The first type semiconductor layer is made of AlxGa1-xN, and x ranges from 0 to 1. A protrusion includes an active layer and a second type semiconductor layer that are sequentially disposed on the first conductive region of the surface of the first type semiconductor layer in such order. A first reflection structure is disposed in the protrusion, and penetrates through the second type semiconductor layer, the active layer of the protrusion and into the first type semiconductor layer. The light-emitting device emits light that has an emission wavelength ranging from 200 nm to 320 nm.

Abstract: An electronic device and a method for document segmentation are provided. The method includes: obtaining a first feature map and a second feature map corresponding to an original document; performing a first upsampling on the second feature map to generate a third feature map; concatenating the first feature map and the third feature map to generate a fourth feature map; inputting the fourth feature map to a first inverted residual block (IRB) and performing a first atrous convolution operation based on a first dilation rate to generate a fifth feature map; inputting the fourth feature map to a second IRB and performing a second atrous convolution operation based on a second dilation rate to generate a sixth feature map; concatenating the fifth feature map and the sixth feature map to generate a seventh feature map; performing a convolution operation on the seventh feature map to generate a segmented document.

Abstract: Described herein is a building panel and related building systems, the building panel having a first major surface opposite a second major surface, the building panel comprising a core comprising a first body comprising a first fibrous material; and a second body comprising a second fibrous material, a veneer facing layer coupled to the core, the veneer facing layer comprising a plurality of perforations.

Abstract: An LED device includes an epitaxial layered structure that includes a first semiconductor layer, a light emitting layer and a second semiconductor layer, first and second electrodes that are disposed on the epitaxial layered structure, and an insulating structure. The first electrode includes a first body portion and a first extending portion connected together. The first extending portion includes a first part and multiple second parts. A projection of the first part on the first semiconductor layer does not overlap a projection of the insulating structure on the first semiconductor layer. The first part has a first sub-part and multiple second sub-parts. A projection of the first sub-part on the first semiconductor layer has a first length, and a projection of each of the second sub-parts on the first semiconductor layer independently has a second length measured in the same direction. The first length is greater than the second length.

Abstract: A semiconductor light emitting device includes an epitaxial light emitting structure that includes a light emitting component. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have first, second and third energy bandgaps (Eg1, Eg2, Eg3) that satisfy a relationship of Eg1<Eg2<Eg3. The third layer has a thickness smaller than that of the first layer. Also disclosed herein is another embodiment of the aforementioned semiconductor light emitting device.

Abstract: This disclosure provides ASCT2-binding molecules, e.g., anti-ASCT2 antibodies, and antigen-binding fragments thereof. In certain aspects, the ASCT2-binding molecules are conjugated to cytotoxic drugs, e.g., ASCT2 antibody-drug conjugates (ADCs). In certain aspects, the anti-ASCT2 antibodies and fragments thereof can be hybridoma-derived murine monoclonal antibodies, and humanized versions thereof. In certain aspects, the ASCT2-binding molecules bind specifically to cells expressing ASCT2, and in some instances, are internalized into the cells. In addition, this disclosure provides compositions and methods for diagnosing and treating diseases or disorders characterized by ASCT2 overexpression, e.g., certain types of cancer. In a particular embodiment, the disclosure provides methods for treating cancer using ASCT2 ADCs.

Abstract: A light-emitting device includes a substrate, a semiconductor structure, and an insulating reflective layer. The substrate has an upper surface and a lower surface. The semiconductor structure is disposed on the upper surface of the substrate. A projection of the semiconductor structure on the upper surface of the substrate has an outer periphery spaced apart a distance from an outer periphery of the upper surface of the substrate. The insulating reflective layer covers at least a part of the semiconductor structure and has an extending portion extending outwardly from the semiconductor structure and covering a part of the upper surface of the substrate. A peripheral end of the extending portion of the insulating reflective layer has an inclined lateral surface, and an included angle defined between the inclined lateral surface and the upper surface of the substrate is not less than 60°.

Abstract: A flip-chip LED device includes an epitaxial structure, a first contact electrode, and a second contact electrode. The second contact electrode is disposed on the epitaxial structure and extending toward the first contact electrode. The second contact electrode includes a first curved extension, a second curved extension, a connecting portion, a first straight extension, and a second straight extension. The connecting portion is connected to the first curved extension and to the second curved extension. The first straight extension is connected to the first curved extension. The second straight extension is connected to the second curved extension.

Abstract: A light-emitting device includes a substrate and a semiconductor light-emitting stack. The substrate includes an upper surface, a first side surface, and a second side surface adjacent to the first side surface. The semiconductor light-emitting stack includes a first conductivity type semiconductor layer, a light-emitting layer, and a second conductivity type semiconductor layer that are sequentially disposed on the upper surface of the substrate in such order. The first side surface includes X number of first laser inscribed marks, and the second side surface includes Y number of second laser inscribed marks, in which Y>X>0 and Y?3. A method for manufacturing the light-emitting device is also provided herein.

Abstract: A flip-chip light-emitting device includes a light-emitting unit, a first electrode, and a second electrode. The light-emitting unit includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first electrode is disposed on the light-emitting unit and electrically connected to the first type semiconductor layer. The second electrode is disposed on the light-emitting unit and electrically connected to the second type semiconductor layer. The first electrode or the second electrode is free of gold, and includes an aluminum layer and at least one platinum layer disposed on the aluminum layer opposite to the light-emitting unit.

Abstract: A polypeptide fragment B (MP-B) has an amino acid sequence shown in SEQ ID NO: 1, in which an amino acid Xaa at position 10 is Arg, Phe, Glu, Thr, or absent, an amino acid Xaa at position 16 is Asn, Val, Leu, Gly, or absent, and an amino acid Xaa at position 25 is Ser, Glu, Met, Arg, or absent. The MP-B can significantly improve the colonic pathologic morphology and decrease a colonic histopathologic score and an expression level of colonic interferon-? (IFN-?) in an inflammatory bowel disease (IBD) mouse model, and shows the ability to interfere with the occurrence of IBD in mice.

Abstract: A light-emitting device includes a substrate and an epitaxial unit. The substrate has a first and a second surface. The substrate is formed on the first surface with a plurality of protrusions. The epitaxial unit includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially disposed on the first surface of the substrate. The first surface of the substrate has a first area that is not covered by the epitaxial unit, and a second area this is covered by the epitaxial unit. A height difference (h2) between the first area and the second area is no greater than 1 ?m. A display apparatus and a lighting apparatus are also disclosed.

Abstract: A bridge structure dynamic response of a bridge structure under the action of heavy duty vehicle load is obtained through sensors arranged on the bridge structure; according to vertical vibration acceleration ao and vertical deflection yo of the bridge at a center of gravity o of the heavy duty vehicle and speed of the heavy duty vehicle Uvehicle, a response of a table top of a vibration table is reconstructed, and interaction force of the vehicle-bridge coupling model is obtained; a nonlinear finite element model of the bridge structure is established, and the vehicle-bridge interaction force is taken as external force, and the dynamic response of the bridge structure is taken as a structural response, and modification of the finite element model of the bridge structure is completed through a nonlinear parameter identification method. The invention is mainly used for updating a bridge model.

Abstract: A light-emitting diode includes a substrate, a light-emitting unit, an insulating layer, a first contact electrode and a second contact electrode. The insulating layer is disposed on the light-emitting unit, and has a first through hole and a second through hole. The first contact electrode and the second contact electrode pass through the first through hole and the second through hole to be electrically connected to the light-emitting unit, respectively. A projection of one of the first contact electrode and the second contact electrode on the substrate is rectangular-like in shape and has a first arc side and a second arc side that are opposite to each other.

Abstract: A light-emitting device includes a light-emitting laminated structure, a first electrode, and a second electrode. The first electrode has a reflection layer, an intermediate layer, and an electrically conductive layer. The intermediate layer includes a barrier layer having a first repeating paired layer unit and a second repeating paired layer unit, each of which has a platinum layer. The first repeating paired layer unit is closer to the electrically conductive layer than the second repeating paired layer unit, and a thickness of the platinum layer of the first repeating paired layer unit is greater than a thickness of the platinum layer of the second repeating paired layer unit.

Abstract: A flip-chip semiconductor light-emitting element and a semiconductor light-emitting device are provided. The element includes a substrate and a light-emitting epitaxial layer disposed on the substrate. When electrode structures are formed overlying the light-emitting epitaxial layer, a first electrode layer partially covering the light-emitting epitaxial layer is omitted, thus a surface of the light-emitting epitaxial layer has a higher flatness. When an insulating reflective layer and an insulating protective layer are subsequently formed, flatness of the insulating reflective layer and the insulating protective layer can be ensured.

Abstract: A light emitting diode device includes a substrate having a substrate surface, an epitaxial structure having an epitaxial surface opposite to the substrate surface, and a plurality of bridging electrodes disposed on the epitaxial surface. The epitaxial structure includes first, second and third light emitting units spacedly and sequentially disposed on the substrate surface. A projection of the second light emitting unit has a first edge and a second edge that is connected with and perpendicular to the first edge. The epitaxial surface has an operating zone on the second light emitting unit that is adapted to be pushed by an ejector pin. A length of the second edge is equal to or greater than a diameter of the operating zone.

Abstract: A displaying equipment at least including an image controlling module, a primary system module, and a system controlling module is disclosed. The image controlling module continuously receives an input image from an image sensitive device after activates, and directly outputs the received input image. The system controlling module constantly monitors the primary system module after activates to determine whether the primary system module activates completely. The primary system module runs an operating system after being activated to process the input image and to generate a processed image. After the primary system module activates completely, the image controlling module outputs both the input image and the processed image simultaneously. When the primary system module is abnormal, the image controlling module restores to output the input image only.

Abstract: A control method for charging time sharing in a display apparatus, which includes receiving image data including a plurality of pixel data signals corresponding to a plurality of display driving periods, each display driving period associated with pixel data signals of a respective row of the display apparatus, calculating a plurality of gray variations corresponding to the plurality of display driving periods according to the plurality of pixel data signals, adjusting the plurality of display driving periods to generate a plurality of adjusted display driving periods according to the plurality of gray variations, and generating a gate clock signal according to the plurality of adjusted display driving periods.