Patents by Inventor Ying Gao

Ying Gao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090061025
    Abstract: Compositions containing about 0.6% to about 20% of tea tree oil are described. Some compositions are in the form of solutions, suspensions, spray, lotions, gels, pastes, medicated sticks, balms, cleansers (including shampoos and soaps), creams, or ointments. Also described are compositions and methods for use in treating ocular Demodex infestations and related conditions using such compositions.
    Type: Application
    Filed: August 29, 2007
    Publication date: March 5, 2009
    Applicant: TISSUETECH, INC.
    Inventors: Ying-Ying GAO, Scheffer C.G. TSENG
  • Patent number: 7495217
    Abstract: In some embodiments, techniques are described for combining an X-ray detector (e.g., for providing EPMA) and an electron detector (e.g., for providing AES) to provide a tool for determining film compositions and thicknesses on a specimen, such as a semiconductor structure or wafer. In one embodiment, a system includes a beam generator configurable to direct a beam towards a specimen. The electron beam may generate Auger electrons and X-rays. The system may also include at least one electron detector disposed adjacent to (e.g., above) the specimen to detect electrons and measure their energies emanating from a top layer of the specimen. One or more X-ray detectors may be disposed adjacent to the specimen to detect X-rays.
    Type: Grant
    Filed: May 21, 2007
    Date of Patent: February 24, 2009
    Assignee: KLA-Tencor Corporation
    Inventors: Ying Gao, Gary Janik
  • Publication number: 20090019461
    Abstract: A signal may be received in accordance with a protocol stack having a first portion (400) that contains a control layer and a stream layer, and a second portion (401) that contains a physical layer and a MAC layer. The first portion may invoke an application program interface (API 1402) to instruct the second portion to replace a current set of signal acquisition parameters with an initial set of signal acquisition parameters.
    Type: Application
    Filed: April 30, 2008
    Publication date: January 15, 2009
    Applicant: QUALCOMM INCORPORATED
    Inventors: Shusheel Gautam, Michael DeVico, Rob Stacey, Phani Bhushan Avadhanam, Ying Gao, Jian Zhang, Paul Richard Ellis, Viktor Filiba, Tong Tang
  • Publication number: 20090019460
    Abstract: Packets of information may be received in accordance with a protocol stack having a first portion (400) that contains a control layer and a stream layer, and a second portion (401) that contains a physical layer and a MAC layer. The second portion also maintains a group of inbound packets and respectively associated error statuses. The first portion invokes an application programming interface (API 1301,1302,1401,1402) to instruct the second portion to perform an action with respect to at least one of the inbound packets, which action is related to the error status associated with that packet.
    Type: Application
    Filed: April 30, 2008
    Publication date: January 15, 2009
    Applicant: QUALCOMM INCORPORATED
    Inventors: Shusheel Gautam, Michael DeVico, Rob Stacey, Phani Bhushan Avadhanam, Ying Gao, Jian Zhang, Paul Richard Ellis, Viktor Filiba, Tong Tang
  • Publication number: 20080268787
    Abstract: Methods and apparatus for service acquisition in a broadcast system. In an aspect, a method includes detecting whether a loss of service has occurred, and initiating acquisition attempts during an aggressive acquisition phase if a loss of service has occurred, wherein a backoff time interval between successive acquisition attempts is constant or increased, and wherein the aggressive acquisition phase ends when service acquisition is achieved or a selected number of acquisition attempts have been performed. An apparatus includes interface logic configured to detect whether a loss of service has occurred, and processing logic configured to initiate acquisition attempts during an aggressive acquisition phase if a loss of service has occurred, wherein a backoff time interval between successive acquisition attempts is constant or increased, and wherein the aggressive acquisition phase ends when service acquisition is achieved or a selected number of acquisition attempts have been performed.
    Type: Application
    Filed: April 22, 2008
    Publication date: October 30, 2008
    Inventors: Ralph Akram Gholmieh, An Mei Chen, Michael DeVico, Sajith Balraj, Ying Gao
  • Publication number: 20080176546
    Abstract: An apparatus is configured to receive a signal in accordance with a protocol stack comprising a physical layer, MAC layer, control layer and stream layer. The apparatus includes a receiver stack processing system configured to provide the control and stream layers, a media processing system configured to provide the physical and MAC layers, and an application programming interface (API) to support service requests from the receiver stack processing system to the media processing system.
    Type: Application
    Filed: July 25, 2007
    Publication date: July 24, 2008
    Applicant: QUALCOMM INCORPORATED
    Inventors: Michael Devico, Phani Bhushan Avadhanam, Rob Stacey, Shusheel Gautam, Tong Tang, Viktor Filiba, Ying Gao, Jian Zhang, Paul Richard Ellis
  • Patent number: 7358494
    Abstract: The material composition of a thin film formed on a substrate or covered by a cap layer that shares one or more elements with the thin film can be determined by combining characteristic material data, such as characteristic x-ray data, from a material composition analysis tool, such as an electron probe-based x-ray metrology (EPMA) operation, with thickness data and (optionally) possible material phases for the thin film. The thickness data and/or the material phase options can be used to determine, for example, the penetration depth of a probe e-beam of the EPMA tool. Based on the penetration depth and the thin film thickness, the characteristic x-ray data from the EPMA operation can be analyzed to determine the composition (e.g., phase or elemental composition) of the thin film. An EPMA tool can include ellipsometry capabilities for all-in-one thickness and composition determination.
    Type: Grant
    Filed: June 15, 2005
    Date of Patent: April 15, 2008
    Assignee: KLA-Tencor Technologies Corporation
    Inventors: Ying Gao, Moshe Sarfaty
  • Publication number: 20080027001
    Abstract: The present invention provides novel isolated and purified polynucleotides and polypeptides related to functional motifs of the Nogo receptor 1 (NgR1) (e.g., the binding pocket on the side surface of NgR1, functional motifs comprising the amino acid sequence of FRG, etc.) and use of peptides mimicking these functional motifs as antagonists to NgR1 ligands, e.g., myelin-associated glycoprotein, oligodendrocyte myelin glycoprotein, Nogo-A, Nogo-66, GT1b, an antibody to Nogo receptor, an antibody to GT1b, an antibody to p75 neurotrophin receptor, and an antibody to Lingo-1, etc. The invention also provides antibodies to the mimetic peptide antagonists. The present invention is further directed to novel therapeutics and therapeutic targets and to methods of screening and assessing test compounds for treatments requiring axonal regeneration, i.e., reversal of the effects of NgR1 ligand binding to the NgR1 (i.e., producing inhibition of axonal growth).
    Type: Application
    Filed: July 9, 2007
    Publication date: January 31, 2008
    Inventors: Andrew Wood, Alan Katz, Ying Gao, Brian Bates, Patrick Doherty, Gareth Williams
  • Publication number: 20070186296
    Abstract: TNFRSF19 nucleic acids and proteins, TNFRSF19 binding partners and modulators, and methods of using the same.
    Type: Application
    Filed: February 2, 2007
    Publication date: August 9, 2007
    Applicant: Wyeth
    Inventors: Ying Gao, Huai-Ping Ling, Andrew Wood, Kodangattil Sreekumar
  • Patent number: 7220964
    Abstract: In various embodiments, techniques are described for combining an X-ray detector (e.g., for providing EPMA) and an electron detector (e.g., for providing AES) to provide a tool for determining film compositions and thicknesses on a specimen, such as a semiconductor structure or wafer. In one embodiment, a system includes a beam generator configurable to direct an electron beam towards a specimen. The electron beam may generate Auger electrons and X-rays. The system may also include at least one electron detector disposed adjacent to (e.g., above) the specimen to detect electrons and measure their energies emanating from a top layer of the specimen. One or more X-ray detectors may be disposed adjacent to the specimen to detect X-rays.
    Type: Grant
    Filed: May 18, 2005
    Date of Patent: May 22, 2007
    Assignee: KLA-Tencor Technologies Corporation
    Inventors: Ying Gao, Gary Janik
  • Patent number: 7061021
    Abstract: This invention is directed to a system and method of fabricating PN and PiN diodes by diffusing an acceptor impurity into a substrate. This invention is particularly advantageous for fabricating SiC diodes having linearly graded, deep pn junctions. One method that this invention uses to achieve its advantages is by diffusing an acceptor impurity into a substrate using a crucible, acceptor source, substrate, and furnace.
    Type: Grant
    Filed: May 3, 2004
    Date of Patent: June 13, 2006
    Assignee: The University of South Carolina
    Inventors: Tangali S. Sudarshan, Stanislav Soloviev, Ying Gao
  • Patent number: 6999180
    Abstract: An apparatus capable of measuring topography and transparent film thickness of a patterned metal-dielectric layer on a substrate without contact with the layer. A broadband interferometer measures an absolute phase of reflection at a plurality of wavelengths from a plurality of locations within a field of view on the metal-dielectric patterned layer on the substrate, and produces reflection phase data. An analyzer receives the reflection phase data and regresses the transparent film thickness and the topography at each of the plurality of locations from the reflection phase data. In this manner, the apparatus is not confused by the phase changes produced in the reflected light by the transparent layers, because the thickness of the transparent layers are determined by using the reflection phase data from multiple wavelengths. Further, the surface topography of the layer, whether it be opaque or transparent is also determinable.
    Type: Grant
    Filed: April 2, 2003
    Date of Patent: February 14, 2006
    Assignee: KLA-Tencor Technologies Corporation
    Inventors: Gary R. Janik, Hidong Kwak, Ying Gao, Johannes D. De Veer
  • Publication number: 20050184296
    Abstract: This invention is directed to a system and method of fabricating PN and PiN diodes by diffusing an acceptor impurity into a substrate. This invention is particularly advantageous for fabricating SiC diodes having linearly graded, deep pn junctions. One method that this invention uses to achieve its advantages is by diffusing an acceptor impurity into a substrate using a crucible, acceptor source, substrate, and furnace.
    Type: Application
    Filed: April 21, 2005
    Publication date: August 25, 2005
    Inventors: T.S. Sudarshan, Stanislav Soloviev, Ying Gao
  • Publication number: 20040226058
    Abstract: A culture system for maintaining avian PGCs for long periods in tissue culture is provided. This culture system uses LIF, bFGF, IGF-I and SCF. The resultant PGCs are useful for the production of transgenic and chimeric avians, in particular, chickens or turkeys.
    Type: Application
    Filed: June 18, 2004
    Publication date: November 11, 2004
    Applicant: University of Massachusetts, a public institution of higher education of the commonwealth of Massach
    Inventors: F. Abel de Leon, Catherine Blackwell, Xiu Ying Gao, James M. Robl, Steven L. Stice, D. Joseph Jerry
  • Publication number: 20040217457
    Abstract: This invention is directed to a system and method of fabricating PN and PiN diodes by diffusing an acceptor impurity into a substrate. This invention is particularly advantageous for fabricating SiC diodes having linearly graded, deep pn junctions. One method that this invention uses to achieve its advantages is by diffusing an acceptor impurity into a substrate using a crucible, acceptor source, substrate, and furnace.
    Type: Application
    Filed: May 3, 2004
    Publication date: November 4, 2004
    Inventors: T. S. Sudarshan, Stanislav Soloviev, Ying Gao
  • Patent number: 6411111
    Abstract: A testing system comprising an electron beam probe, a photon beam probe, and a device under test (DUT) card holder which is positioned between the electron beam probe and the photon beam probe. A first valve is positioned between the electron beam probe and the DUT. A second valve, located on an opposite side of the DUT from the first valve, is positioned between the photon beam probe and the DUT. The first and second valve operate in cooperation to control the pressure surrounding the DUT card. One embodiment of the invention includes a first test chamber and a second test chamber. The first test chamber includes the area between the first side of the DUT card and the first valve. The second test chamber includes the area between the second side of the DUT card and the second valve. The present invention includes a method for using the test system of the present invention to test both the top and bottom surfaces of a semiconductor device.
    Type: Grant
    Filed: May 15, 2000
    Date of Patent: June 25, 2002
    Assignee: National Semiconductor Corporation
    Inventors: Geng Ying Gao, Kevin Weaver
  • Patent number: 6156569
    Abstract: A culture system for maintaining avian PGCs for long periods in tissue culture is provided. This culture system uses LIF, bFGF, IGF and SCF. The resultant PGCs are useful for the production of transgenic and chimeric avians, in particular, chickens or turkeys.
    Type: Grant
    Filed: August 4, 1997
    Date of Patent: December 5, 2000
    Assignee: University of Massachusetts Office of Vice Chancellor for Research at Amherst
    Inventors: F. Abel Ponce de Leon, Catherine Blackwell, Xiu Ying Gao, James M. Robl, Steven L. Stice, D. Joseph Jerry