Abstract: The present application discloses a ceiling-mount air disinfector, i.e., an air disinfection troffer, including: a housing; a first air outlet and a first air inlet respectively near two opposing ends of a side of the housing; a filter covering the first air inlet; a cross flow fan located near the first air outlet, and an air disinfection apparatus disposed in the housing including an ultraviolet disinfection mechanism and an air rectifying chamber, said air rectifying chamber including a plurality of air ducts configured in parallel. In operation, ultraviolet light and air flow are introduced into the air ducts, traveling toward each other along a long side of the air ducts so that maximized air-light interaction time is achieved for the best disinfection efficacy.

Abstract: A storage system is provided. The storage system includes a plurality of non-volatile memory modules a storage controller operatively coupled to the plurality of non-volatile memory modules, the storage controller comprising a processor. The process is to receive a set of data blocks to be stored in the plurality of non-volatile memory modules. The processor is further to program the set of data blocks at a first location of the plurality of non-volatile memory modules. The processor is further to determine whether a failure occurred while programming the set of data blocks in the plurality of non-volatile memory modules. The processor is further to reprogram a subset of the data blocks at a second location of the plurality of non-volatile memory modules, a number of blocks in the subset of data blocks based on durabilities of the set of data blocks, in response to determining that a failure occurred while programming the set of data blocks at the first location.

Abstract: An apparatus has a current spreading base with an n-contact. The current spreading base has a small n-type resistivity to promote lateral electron flow. A current spreading cap is on top of the current spreading base. The current spreading cap has a large n-type resistivity to suppress vertical electron flow and promote lateral electron flow. An active region is on top of the current spreading cap. A p-type structure is on top of the active region with a p-contact. Sheet resistance of the current spreading base is experimentally established, the half width xF of a mesa is selected and the current spreading cap thickness hc is selected to collectively promote uniform current injection into the active region.

Abstract: A substrate structure includes an AlN template layer formed on a substrate. Depressions sealed by the AlN template layer are formed on a surface of the substrate at an interface between the substrate and the AlN template layer, the sealed depressions contain discrete depressions and depression networks and have a lateral size in the range of 20-100 nm, a vertical dimension in the range of 20-100 nm, and a density in the range of 1.0×109-2.0×1010 cm?2. The substrate structure is used for light-emitting diodes with improved optical output power efficiency.

Abstract: An UV or DUV light-emitting diode package includes: a foundation; a first metal layer, a second metal layer, and third metal layer formed on a top surface of the foundation, wherein the first metal layer and the second metal layer are electrically isolated by a first gap, the third metal layer surrounds the first and second metal layers and is electrically isolated from the first and second metal layers by a second gap; a lens attached to the top surface of the foundation, wherein a cavity is formed between the foundation and the lens; a chip disposed in the cavity, wherein an anode of the chip is electrically connected to the first metal layer and a cathode of the chip is electrically connected to the second metal layer; and a fluid encapsulate, wherein the cavity is fully or partially filled with the fluid encapsulate.

Abstract: A patterned substrate for light emitting diode includes a plurality of nodes and links protruding from a base plane of the substrate and base areas on the substrate, each pair of adjacent nodes is connected by a corresponding link, respectively. The nodes and links also can be concave nodes and concave links cutting into a surface of the substrate, each pair of adjacent concave nodes is connected by a corresponding concave link, respectively.

Abstract: A storage system has NVRAM (non-volatile random-access memory), solid-state storage memory, and a processor to perform a method. The method includes allocating virtual units of NVRAM with mapping of the virtual units to physical memory. The method includes writing data having various sizes into allocated first virtual units of memory and into allocated second virtual units of memory. The first virtual units of memory each include a first contiguous physical addressed amount of NVRAM having a first size. The second virtual units of memory each include an amount of NVRAM having a second size. The method includes relocating at least some of the data such that a portion of the allocated second virtual units of memory become available for the allocating.

Abstract: A data segment to be written to a set of storage devices is identified, wherein at least one storage device of the set of storage devices has a first allocation unit size that is larger than a second allocation unit size of other storage devices of the set of storage devices. A first subsegment having a first subsegment height corresponding to the second allocation unit size is mapped across the set of storage devices. A second subsegment having a second subsegment height that is a first difference between the first allocation unit size and the second allocation unit size is mapped across a first subset of the set of storage devices. A third subsegment having a third subsegment height that is a second difference between the second allocation unit size and second subsegment height is mapped across a second subset of the set of storage devices.

Abstract: Heterostructures containing one or more sheets of positive charge, or alternately stacked AlGaN barriers and AlGaN wells with specified thickness are provided. Also provided are multiple quantum well structures and p-type contacts. The heterostructures, the multiple quantum well structures and the p-type contacts can be used in light emitting devices and photodetectors.

Abstract: An air disinfection device includes: a housing that includes an inlet port for taking air therethrough and a disinfection chamber that has a shell in a shape of a truncated ellipsoid. The device also includes: a disinfection head that is disposed in the inlet port and includes a light source for generating disinfection light that disinfects the air in the disinfection chamber, where the light source is located substantially on a plane where a first focal point of the truncated ellipsoid is located. The disinfection head further includes a fan for taking the air through the inlet port to the disinfection chamber and a filter for filtering the air. The device further includes a power source electrically coupled to the disinfection head and configured to provide electrical power for the disinfection head.

Abstract: A storage system establishes a staging region, for temporary writing of arriving data, and a stable region, for transfer of data from the staging region, in storage memory. The storage system establishes resiliency groups, each with a characteristic level of redundancy that is settable on an individual basis. The storage system performs data accesses of data stripes in accordance with the staging region, the stable region, a first resiliency group and a second resiliency group.

Abstract: Locking structure includes a first connector, a second connector, a locking member, a sliding member, and a holding member. The first connector includes a first cavity and a first protrusion in the first cavity. The second connector includes a second cavity and a second protrusion in the second cavity. The locking member is slidably received in the second cavity and extends into the first cavity. A peripheral wall of the locking member defines a fastening groove. The sliding member extends into the second cavity and abuts the locking member to drive the locking member to move toward the first protrusion and the second protrusion so that two opposite side walls of the fastening groove press against opposite sides of the first protrusion and the second protrusion. The sliding member defines a latching slot. The holding member includes a latching member for latching in or disengaging from the latching slot.

Abstract: Provided a device and method for paperboard stamping forming, relates to the technical field of paper material stamping forming equipment, comprising a punch-pin and a pressure-applying component, the pressure-applying component acting on a paperboard through a fluid medium; before the punch-pin carries out a stamping forming on the paperboard, the pressure-applying component pre-deforms the paperboard and a direction of the pre-deformation is opposite to a direction of the stamping forming; aiming to the current problem that the forming depth that is difficult to meet requirements resulted in the paperboard forming paper container limited by the deformation capacity of the paperboard, the forming depth of the paper container is improved by making the paperboard deform twice in opposite directions, bringing into play the deformation capacity of the full area of the paperboard, increasing the deformable amount of the paperboard, and reducing problems such as cracks and breakage in the forming process.

Abstract: A die-aware scheduler that has a hierarchical queue is suitable for use in data storage systems. The hierarchical queue includes a priority queue, a die queue, a write queue and a power token queue, and may also include an admission queue. The die queue, the write queue and the power token queue have a width and lanes corresponding to dies in solid-state storage. The hierarchy of queues has dynamic adjustability of a ratio relating to handling queue items in the hierarchy of queues, to optimize latency and throughput.

Abstract: A method of operating a storage system, and related storage system, are provided. The storage system establishes resiliency groups, each having a defined level of redundancy of resources of the storage system. The resiliency groups include at least one compute resources resiliency group and at least one storage resources resiliency group. The storage system supports capability of configurations that have multiples of each of the resiliency groups. Blades of the storage system perform distributed data and metadata storage across modular storage devices, in accordance with the resiliency groups.

Abstract: A control method includes determining a first control signal of a first control unit, determining a second control signal of a second control unit, and controlling a light effect of the illumination device according to a control rule, the first control signal, and the second control signal. The first control signal is used to control an illumination device to generate a first light effect. The second control signal is used to control the illumination device to generate a second light effect.

Abstract: A contact lens product having an antioxidative function includes a composition in the form of a solution. The composition includes gold nanoparticles and at least one non-enzymatic antioxidant. The gold nanoparticles are present in an effective concentration from 0.01 ppm to 3000 ppm and have an average particle size from 0.5 nm to 40 nm. The at least one non-enzymatic antioxidant is present in an amount greater than 0 wt% and less than 20 wt% based on the composition being 100 wt%.

Abstract: A light emitting diode includes an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure; a p-contact layer formed on the p-type structure; and a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the p-contact layer, wherein the p-ohmic contact comprises one or more layer of metal oxide.

Abstract: A storage system is provided. The storage system include a primary storage node that includes a primary processing device. The primary storage node is communicatively coupled to a secondary storage node. The secondary storage node includes a secondary processing device and a set of non-volatile memory modules. The primary processing device is to identify one or more storage operations to be performed on the set of non-volatile memory modules of the secondary storage node and transmit one or more instructions to the secondary storage node to perform the one or more storage operations, the one or more storage operations performed by the secondary processing device.

Abstract: A DUV light source module includes a print circuit board, an array of DUV light-emitting diodes (LEDs), a plurality of DUV LED drivers for driving the DUV light-emitting diodes, and a pair of electrical connectors for connecting the DUV LED drivers hence the DUV light-emitting diodes to a power source, and A DUV light source device includes the DUV light source module, a reflector, a heat sink, a heat pipe, a radiator and a fan.