Abstract: An air disinfection device includes: a housing that includes an inlet port for taking air therethrough and a disinfection chamber that has a shell in a shape of a truncated ellipsoid. The device also includes: a disinfection head that is disposed in the inlet port and includes a light source for generating disinfection light that disinfects the air in the disinfection chamber, where the light source is located substantially on a plane where a first focal point of the truncated ellipsoid is located. The disinfection head further includes a fan for taking the air through the inlet port to the disinfection chamber and a filter for filtering the air. The device further includes a power source electrically coupled to the disinfection head and configured to provide electrical power for the disinfection head.

Abstract: A semiconductor device and method for fabricating same is disclosed. Embodiments are directed to a semiconductor device and fabrication of same which include a flexible substrate and a buffer stack overlying the substrate. The buffer stack comprises at least one epitaxial buffer layer. An epitaxial doped layer comprised predominantly of silicon overlies the at least one epitaxial buffer layer. Mobility of the device is greater than 100 cm2/Vs and carrier concentration of the epitaxial doped layer is less than 1016 cm?3.

Abstract: Embodiments of the present disclosure provides an electronic apparatus and a data processing method. The electronic apparatus includes a first sensor (101), configured to collect a distance sensing parameter, and a second sensor (102), configured to collect a touch control sensing parameter. A touch control area of the second sensor (102) covers a specific area of a first surface of the electronic apparatus. The first sensor collects the distance sensing parameter in a space above the touch control sensing area. The distance sensing parameter may be collected in the space above the touch control sensing area by arranged a distance sensor. Thus, the electronic apparatus may realize a touch control input and an input through the distance, which enriches input manners of the electronic apparatus and improves the user experience.

Abstract: A photodetector includes an UV transparent n-type structure, an UV transparent p-type structure, and a photon absorbing region sandwiched between the n-type structure and the p-type structure; a p-contact layer formed on the p-type structure; and a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the p-contact layer, wherein the p-ohmic contact comprises one or more layer of metal oxide.

Abstract: A high-power light-emitting diode is made by monolithically integrating multiple miniature light-emitting chips for improved operation voltage, light extraction efficiency and device yield. The light emitting diode includes a plurality of monolithically integrated mini chips, each of the mini chips has a mini n-contact formed on an n-type structure, a mini p-ohmic contact formed on a p-type structure, and a mini light emitting area defined by the mini p-ohmic contact. An n-bridge metal electrically connecting the mini n-contact of the mini chips to an n-bonding pad, the n-bridge metal is formed on the p-type structure and on sidewall of an opening in the p-type structure and on the active-region.

Abstract: A light emitting device with on-chip optical power readout includes a light emitting mesa and a light detecting mesa formed adjacent to each other on the same substrate of a chip, and a portion of the light emitted from the light emitting mesa is transmitted to the light detecting mesa at least through the substrate. The light emitting mesa and the light detecting mesa have exactly the same epitaxial structure and can be electrically isolated from each other by an insulation layer, or an airgap formed therebetween, or by ion implantation. The light emitting mesa and the light detecting mesa can also share an n-type structure and a common n-electrode while having their own p-electrode, respectively.

Abstract: A storage system has a first memory, and a second memory that includes storage memory. The storage system has a processing device. The processing device is to select whether to write data to the first memory and write the data from the first memory to the second memory, or to write the data to the second memory bypassing the first memory. The processing device is to write portions of data for storage according to such selection.

Abstract: A storage system establishes a staging region, for temporary writing of arriving data, and a stable region, for transfer of data from the staging region, in storage memory. The storage system establishes resiliency groups, each with a characteristic level of redundancy that is settable on an individual basis. The storage system performs data accesses of data stripes in accordance with the staging region, the stable region, a first resiliency group and a second resiliency group.

Abstract: A storage system has a first memory, a second memory that include solid-state storage memory, and a processing device. The processing device is to select a mode for each portion of data to be written. Selection of the mode is based at least on size of the portion of data. Selection of the mode is from among modes that include a first mode of writing the portion of data in mirrored RAID form to the first memory for later transfer from the first memory to the second memory, a second mode of writing the portion of data in parity-based RAID form to the first memory for later transfer from the first memory to the second memory, and a third mode of writing the portion of data to the second memory, bypassing the first memory. The processing device is to handle portions of data to be written according to such selection.

Abstract: A flat tube and a heat exchanger are provided. The flat tube has a first end and a second end spaced apart in a length direction of the flat tube, and a first side surface and a second side surface spaced apart in a width direction of the flat tube. The first side surface and the second side surface of the first end are provided with a first concave part and a second concave part, respectively. The first concave part and the second concave part have a first length and a second length that extend from an end surface of the first end in the length direction of the flat tube, and have a first depth and a second depth that extend in the width direction of the flat tube. The first length is not equal to the second length.

Abstract: An air disinfection device includes: a housing including an inlet port and a disinfection chamber that has a shape of a frustum; and a disinfection head disposed in the inlet port and including a fan for taking air into the housing, a filter for filtering the air; and a light source for generating disinfection light that forms a light frustum and disinfects the air in the disinfection chamber. The air disinfection device further includes a power source that provides electrical power for the disinfection head. The light source is arranged so that the light frustum is coaxial with the chamber frustum, and the light and chamber frusta diverge along the same direction. The lateral surface of the light frustum can coincide with the inner lateral surface of the disinfection chamber and the entire portion of a space defined by the disinfection chamber is located within the light frustum.

Abstract: The method includes: receiving, by a first managed object device, a first transaction resource creation request that is sent by an application server and includes an identifier of a first to-be-operated resource, a first execution time, and a first to-be-executed operation; receiving, by a second managed object device, a second transaction resource creation request that is sent by the application server and includes an identifier of a second to-be-operated resource, a second execution time, and a second to-be-executed operation; successfully creating, by the first managed object device, a first transaction resource according to the first transaction resource creation request, and successfully creating, by the second managed device, a second transaction resource according to the second transaction resource creation request.

Abstract: A storage system has a first storage and a second storage. The first storage has a first plurality of blades with first computing resources, first RAM resources and first solid-state storage resources. The second storage has second plurality of blades with second computing resources, second RAM resources and second solid-state storage resources. The first computing resources and the second computing resources cooperate to determine on which blades of the first and second pluralities of blades, and in which storage of the first and second storage, to perform compute processes and memory controller processes, using which of the first and second computing resources.

Abstract: A storage system determines a size of a portion of data to be written as a RAID stripe across storage devices. The storage system determines aspects of the RAID stripe. Aspects of the RAID stripe include a data segment size for shards of the RAID stripe, a type of RAID, a width of the RAID stripe, a level of redundancy of the RAID stripe, and a selection of members of the storage devices. All of the determining for the aspects of the RAID stripe are on a dynamic basis and based at least on the size of the portion of data. The storage system writes the portion of data according to the determined aspects of the RAID stripe across the selected members of the storage devices.

Abstract: A system for testing intelligent vehicles, including a test bench, a hardware-in-the-loop sub-system, a software-in-the-loop sub-system, a target-in-the-loop sub-system and a test management platform. The test bench is configured to simulate the resistance of the actual road according to the road resistance parameters, and simulate the posture of the actual road according to the road posture parameters.

Abstract: A fluid conduit disinfector includes a conduit with a fluid disinfection channel defined by inner side surface of the conduit, wherein the inner side surface of the conduit is reflective with a germicidal ultraviolet (GUV) light reflectance R of 50%-99%; a GUV light source for emitting GUV light into the fluid disinfection channel; a fan for forcing a fluid to be disinfected to flow through the fluid disinfection channel, and a filter for filtering particles from the fluid. The fluid disinfection channel may include a first section, a second section and a third section, wherein the first section has a cylindrical shape with a first diameter, the third section has a cylindrical shape with a third diameter larger than the first diameter, the second section has a truncated conical shape and is positioned between the first section and the third section.

Abstract: A light emitting device with on-chip optical power readout includes a light emitting mesa and a light detecting mesa formed adjacent to each other on the same substrate of a chip, and a portion of the light emitted from the light emitting mesa is transmitted to the light detecting mesa at least through the substrate. The light emitting mesa and the light detecting mesa have exactly the same epitaxial structure and can be electrically isolated from each other by an insulation layer, or an airgap formed therebetween, or by ion implantation. The light emitting mesa and the light detecting mesa can also share an n-type structure and a common n-electrode while having their own p-electrode, respectively.

Abstract: A photodetector includes an UV transparent n-type structure, an UV transparent p-type structure, and a photon absorbing region sandwiched between the n-type structure and the p-type structure; a p-contact layer formed on the p-type structure; and a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the p-contact layer, wherein the p-ohmic contact comprises one or more layer of metal oxide.

Abstract: A light emitting diode includes an n-type structure, a p-type structure, and an active-region sandwiched between the n-type structure and the p-type structure; a p-contact layer formed on the p-type structure; and a p-ohmic contact of a thickness in the range of 0.2-100 nm formed on the p-contact layer, wherein the p-ohmic contact comprises one or more layer of metal oxide.