Abstract: The present disclosure provides a semiconductor structure that includes a substrate having devices formed thereon and an interconnect structure electrically coupling the devices into an integrated circuit; a passivation structure formed on the interconnect structure; and a capacitor embedded in the passivation structure, wherein the capacitor includes first metal-insulator-metal (MIM) stacks inserted in first trenches, and second MIM stacks formed into first pillar structures.

Abstract: The present application provides a signal transmission method based on random unitary coding modulation and cross-domain iterative detection, including random unitary coding modulation at a signal transmitting end and cross-domain iterative detection at a receiving end. The random unitary coding modulation includes random unitary modulation or random unitary precoding, utilizing random unitary transformations to ensure that an equivalent channel matrix satisfies the correct right unitary invariance assumption. The cross-domain iterative detection includes using a cross-domain iterative receiver to receive a signal obtained after the random unitary coding modulation. The random unitary coding modulation ensures that general OAMP/VAMP, UAMP, and MAMP-type receivers achieve Bayesian optimal performance. The cross-domain iterative detection allows, through cross-domain detection, the receiver to utilize ultra-sparse time-domain channels, including low-complexity MAMP, OAMP/VAMP, and UAMP-type receivers.

Abstract: A stereoscopic scanning device is applied by a stereoscopic scanning method and includes a projection module and an imaging module. The projection module emits a visible beam to a structural light generator to project a structural light pattern onto a target object, and further emits an invisible beam to the target object for generating a first excitation beam and/or a second excitation beam. The imaging module includes an optical sensor and a color filter. The optical sensor receives the structural light pattern and the excitation beams. The color filter has a first filtering region and a second filtering region. The first filtering region allows penetration of the visible beam and the first excitation beam, and blocks transmission of the second excitation beam. The second filtering region allows penetration of the visible beam and the second excitation beam, and blocks transmission of the firs excitation beam.

Abstract: This application provides a positioning method and an apparatus. The method includes: A first communication apparatus obtains first information, where the first information includes time difference information and location information for sending and receiving reference signals by the first communication apparatus; the first communication apparatus receives second information from a second communication apparatus and third information from a third communication apparatus, where the second information includes time difference information and location information for sending and receiving reference signals by the second communication apparatus, and the third information includes time difference information for sending and receiving reference signals by the third communication apparatus; and the first communication apparatus positions the third communication apparatus based on the first information, the second information, and the third information.

Abstract: Embodiments of the invention relate to a two-phase heat sink (100) for cooling an electrical heat source (200). The two-phase heat sink (100) comprises a chamber (110) which is configured to receive a cooling fluid (F). For improved cooling and heat dissipation, the chamber (110) in its inner surface (112?) comprises a wick area (134) for converting the cooling fluid (F) from a liquid phase to a vapor phase. The wick area (134) and an attachment area (132) overlap with each other at least partly. Thereby, improved cooling is provided. Furthermore, embodiments of the invention also relate to a heat sink comprising two or more such two-phase heat sinks.

Abstract: Heteroatom-doped carbon nanotubes, catalytic electrodes, reactors, methods of making heteroatom-doped carbon nanotubes, and methods of reducing a molecule are described. In an embodiment, the heteroatom-doped carbon nanotube comprises single atomic metal-nitrogen-carbon (M-N—C) sites for use as an electrocatalyst. In an embodiment, the heteroatom-doped carbon nanotube comprises single atomic Fe—N bonds as active sites configured to convert carbon dioxide to carbon monoxide. In an embodiment, the active sites are disposed on an outer surface of the heteroatom-doped carbon nanotube. In an embodiment, the heteroatom-doped carbon nanotube further comprises Ni metal nanoparticles. In an embodiment, the Ni metal nanoparticles are disposed in joints of the heteroatom-doped carbon nanotube. In an embodiment, the Ni metal nanoparticles are encapsulated by graphitic carbon layers of the heteroatom-doped carbon nanotube.

Abstract: A communications circuit includes a receiver (RX) frontend coupled to an RX deserializer and the RX frontend includes a decision feedback equalizer coupled directly between an output and an input of the RX frontend. The decision feedback equalizer may include a first inverter and a series combination of a first resistor and a first capacitor coupled in series with the first inverter.

Abstract: Disclosed is a display panel. The display panel includes a substrate, a first electrode layer, a pixel defining layer, a light-emitting layer, a second electrode layer, and a peripheral conductive structure. When the light-emitting layer is formed through an ink-jet printing process, an organic solution may be printed into auxiliary dummy openings in an initial printing phase, and then printed into effective pixel openings after printing becomes stable.

Abstract: A vibration module is installed in a touch plate. The vibration module includes a housing, a magnetic element, a coil layer and a base plate. The housing includes an accommodation space and an elastic structure. The magnetic element and the coil layer are aligned with each other and disposed within the accommodation space. The base plate is connected with the housing. In addition, the magnetic element and the coil layer are sealed in the accommodation space. The base plate is connected with the housing to seal the magnetic element and the coil layer in the accommodation space. The elastic structure is extended in the direction toward the accommodation space and connected with the magnetic element. The magnetic element is pushed to be close to the coil layer by the elastic structure. When the coil layer is electrically conducted, the magnetic element senses the coil layer and vibrates.

Abstract: The present disclosure relates to an electronic device, a communication method and a computer program product. An electronic device for a General Authorized Access (GAA) user comprises processing circuitry configured to: inquire a Priority Access License (PAL) user for spectrum availability information on a Citizen Broadband Radio Service (CBRS) system; in absence of available frequency bands, receive from said PAL user at least one interference margin allocation scheme proposed by one or more PAL users; based on a particular interference margin allocation scheme of the at least one interference margin allocation scheme, initiate a CBRS system spectrum access procedure with a Spectrum Access System (SAS).

Abstract: The present application discloses a cell contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The cell contact structure includes a bottom contact layer positioned on a substrate and enclosed by a plurality of bit line structures and a plurality of partition layers; a liner layer positioned between the bottom contact layer and the substrate, between the bottom contact layer and the plurality of bit line structures, and between the bottom contact layer and the plurality of partition layers; and a top contact layer positioned on the bottom contact layer and the liner layer. A top surface of the bottom contact layer and a top surface of the liner layer are substantially coplanar. The liner layer includes doped polycrystalline silicon, doped polycrystalline germanium, or doped polycrystalline silicon germanium. The bottom contact layer includes tungsten, titanium, or titanium nitride.

Abstract: The chip includes a device region at a substrate, a corner region at a corner of the substrate, a seal ring surrounding the device region and including a corner section adjacent the corner region, a scribe line region surrounding the seal ring and the corner region, and an alignment key disposed neighboring the seal ring. A package structure including the chip having alignment key is also disclosed.

Abstract: A preparation method for silicon dioxide, controls temperature, pH and stirring rate in steps of preparing a silicon dioxide solution to exert an influence on the stability of a silicon dioxide solution gel system. The prepared silicon dioxide solution has a low viscosity, and finally prepared silicon dioxide has a high dispersity. The prepared silicon dioxide solution with a low viscosity will not adhere to a reaction tank, thus being easy to discharge. When the silicon dioxide prepared by the preparation method is used for preparing a toothpaste, since the silicon dioxide shows high dispersity due to its large BET specific area, low oil absorption and low viscosity, paste of the prepared toothpaste is not prone to caking and can be rinsed off easily. The paste of the prepared toothpaste shows high stability in a follow-up test of the viscosity stability of the toothpaste, thus being suitable for long-term storage.

Abstract: A method for manufacturing a semiconductor device includes: forming a channel including a semiconductor material; forming two intermediate conductive layers in contact with the channel and spaced apart from each other; and forming two conductive contacts respectively on the two intermediate conductive layers. Each of the intermediate conductive layers includes at least one stacking unit. The at least one stacking unit includes two first metal oxide layers spaced apart from each other and a second metal oxide layer disposed between the two first metal oxide layers and extending along a lengthwise line such that the two first metal oxide layers are opposite to each other relative to the lengthwise line. Each of the first metal oxide layers includes first metal atoms. The second metal oxide layer includes second metal atoms that are different from the first metal atoms.

Abstract: The present disclosure relates generally to T cells, e.g., CAR T cells, which have been engineered to express immunomodulatory factors in a tumor-site specific manner. The engineered T cells and pharmaceutical compositions comprising the engineered T cells exhibit improved therapeutic efficacy and reduced toxicity when used for the treatment of cancer. In other embodiments contemplated herein, the present disclosure relates to genome editing systems for engineering T cells to express immunomodulatory factors in a tumor-site specific manner.

Abstract: Ionizable compounds, and compositions and methods of use thereof. The ionizable compounds can be used for making nanoparticle compositions for use in biopharmaceuticals and therapeutics. More particularly, the compounds, compositions and methods are to provide nanoparticles to encapsulate active agents, such as nucleic acid agents, and to deliver and distribute the active agents to cells, tissues, organs, and subjects.

Abstract: Nanoscale colorants are introduced to adjust the hue of transparent conductive films, such as to provide a whiter film. The transparent conductive films can have sparse metal conductive layers, which can be formed using silver nanowires. Color of the film can be evaluated using standard color parameters. In particular, values of color parameter b* can be reduced with the nanoscale colorants without unacceptably changing other parameters, such as haze, a* and transparency.

Abstract: An optoelectronic tweezer device includes a transparent substrate, a semiconductor layer, a first electrode and a dielectric layer. The semiconductor layer is located above the transparent substrate and includes a first doping region, a second doping region and a transition region, wherein the transition region is located between the first doping region and the second doping region. The first electrode is located on the first doping region and is electrically connected to the first doping region. The dielectric layer is located above the semiconductor layer and has a first through hole overlapping the first electrode.

Abstract: Computer implemented methods, systems, and computer program products include program code executing on a processor(s) identifies a query with low performance. The program code generates a small data environment for use in optimizing the query. The program code identifies table(s) and field(s) related to the query with low performance. The program code samples a portion of each table of the one or more tables based on, for each table, parameters of the one or more fields in each table, where the portion sampled comprises records from each table with common data traits to a whole of each table. The program code generates a small data environment comprising the portion of each table. The program code performance tests an optimized version of the query by executing it on the small data environment.

Abstract: The present application discloses a cell contact structure, a semiconductor device, and a method for fabricating the semiconductor device. The cell contact structure includes a bottom contact layer positioned on a substrate and enclosed by a plurality of bit line structures and a plurality of partition layers; a liner layer positioned between the bottom contact layer and the substrate, between the bottom contact layer and the plurality of bit line structures, and between the bottom contact layer and the plurality of partition layers; and a top contact layer positioned on the bottom contact layer and the liner layer. A top surface of the bottom contact layer and a top surface of the liner layer are substantially coplanar. The liner layer includes doped polycrystalline silicon, doped polycrystalline germanium, or doped polycrystalline silicon germanium. The bottom contact layer includes tungsten, titanium, or titanium nitride.