Abstract: A storage system is provided. The storage system includes a plurality of non-volatile memory modules a storage controller operatively coupled to the plurality of non-volatile memory modules, the storage controller comprising a processor. The process is to receive a set of data blocks to be stored in the plurality of non-volatile memory modules. The processor is further to program the set of data blocks at a first location of the plurality of non-volatile memory modules. The processor is further to determine whether a failure occurred while programming the set of data blocks in the plurality of non-volatile memory modules. The processor is further to reprogram a subset of the data blocks at a second location of the plurality of non-volatile memory modules, a number of blocks in the subset of data blocks based on durabilities of the set of data blocks, in response to determining that a failure occurred while programming the set of data blocks at the first location.

Abstract: This application provides a method for training a neural network model and an apparatus. The method includes: obtaining annotation data that is of a service and that is generated by a terminal device in a specified period; training a second neural network model by using the annotation data that is of the service and that is generated in the specified period, to obtain a trained second neural network model; and updating a first neural network model based on the trained second neural network model. In the method, training is performed based on the annotation data generated by the terminal device, so that in an updated first neural network model compared with a universal model, an inference result has a higher confidence level, and a personalized requirement of a user can be better met.

Abstract: A method of preparing polylactic acid (PLA) microsphere and polylactic-co-glycolic acid (PLGA) microsphere is provided, including the following steps. A first solution is provided, including polylactic acid or polylactic-co-glycolic acid and an organic solvent. A second solution is provided, including polyvinyl alcohol, sodium carboxymethyl cellulose and an aqueous solution. The first solution is added to the second solution and, at the same time, the second solution is agitated until polylactic acid is solidified to form a plurality of polylactic acid microspheres, or until polylactic-co-glycolic acid is solidified to form a plurality of polylactic-co-glycolic acid microspheres. The polylactic acid microspheres or polylactic-co-glycolic acid microspheres are collected.

Abstract: Some implementations described herein provide techniques and apparatuses for a stacked semiconductor die package. The stacked semiconductor die package may include an upper semiconductor die package above a lower semiconductor die package. The stacked semiconductor die package includes one or more rows of pad structures located within a footprint of a semiconductor die of the lower semiconductor die package. The one or more rows of pad structures may be used to mount the upper semiconductor die package above the lower semiconductor die package. Relative to another stacked semiconductor die package including a row of dummy connection structures adjacent to the semiconductor die that may be used to mount the upper semiconductor die package, a size of the stacked semiconductor die package may be reduced.

Abstract: The present disclosure relates to methods of treating melanoma in a patient in need thereof, comprising administering to the subject a therapeutically effective amount of ripretinib or a pharmaceutically acceptable salt thereof.

Abstract: The present invention discloses a method of preparing an alkali activation material by using red mud-based wet grinding and carbon sequestration and an application thereof. The preparation method includes: (1) adding water, red mud, a crystalline control agent, and a grinding aid into a wet grinding carbon sequestration apparatus to perform wet grinding, and simultaneously introducing CO2 until a slurry pH reaches 7 to 7.5; and removing wet grinding balls by a sieve to obtain a slurry A; (2) adding carbide slag, water and a water reducer to a wet planetary ball grinder tank for wet grinding, and removing wet grinding balls by a sieve to obtain a slurry B; (3) taking 50 to 80 parts of the slurry A and 20 to 50 parts of the slurry B and mixing them to obtain an alkali activation material.

Abstract: Provided herein are an indene compound, e.g., a compound of Formula (I), and a pharmaceutical composition thereof. Also provided herein is a method of their use for treating, preventing, or ameliorating one or more symptoms of a fibrotic disease.

Abstract: A method of generating an IC layout diagram includes receiving the IC layout diagram including an active region, a gate region extending across the active region from a first active region edge to a second active region edge, and a gate via positioned at a location along the gate region between the first and second edges, configuring a delta resistance network including the first and second edges, a midpoint between the first and second edges, and resistance values based on the location and first and second edges, and performing a simulation based on the delta resistance network.

Abstract: A system on chip (SoC) die package is attached to a redistribution structure of a semiconductor device package such that a top surface of the SoC die package is above a top surface of an adjacent memory die package. This may be achieved through the use of various attachment structures that increase the height of the SoC die package. After encapsulating the memory die package and the SoC die package in an encapsulation layer, the encapsulation layer is grinded down. The top surface of the SoC die package being above the top surface of the adjacent memory die package results in the top surface of the SoC die package being exposed through the encapsulation layer after the grinding operation. This enables heat to be dissipated through the top surface of the SoC die package.

Abstract: A method of manufacturing a semiconductor device includes forming a first bonding layer over a substrate of a first wafer, the first wafer including a first semiconductor die and a second semiconductor die, performing a first dicing process to form two grooves that extend through the first bonding layer, the two grooves being disposed between the first semiconductor die and the second semiconductor die, performing a second dicing process to form a trench that extends through the first bonding layer and partially through the substrate of the first wafer, where the trench is disposed between the two grooves, and thinning a backside of the substrate of the first wafer until the first semiconductor die is singulated from the second semiconductor die.

Abstract: A gate structure includes a substrate divided into an N-type transistor region and a P-type transistor region. An interlayer dielectric covers the substrate. A first trench is embedded in the interlayer dielectric within the N-type transistor region. A first gate electrode having a bullet-shaped profile is disposed in the first trench. A gate dielectric contacts the first trench. An N-type work function layer is disposed between the gate dielectric layer and the first gate electrode. A second trench is embedded in the interlayer dielectric within the P-type transistor region. A second gate electrode having a first mushroom-shaped profile is disposed in the second trench. The gate dielectric layer contacts the second trench. The N-type work function layer is disposed between the gate dielectric layer and the second gate electrode. A first P-type work function layer is disposed between the gate dielectric layer and the N-type work function layer.

Abstract: The present application relates to a novel benzoazepine compound, comprising a pharmaceutically acceptable salt thereof. The present application also provides a pharmaceutical composition comprising the compound and a pharmaceutically acceptable salt thereof. The present application relates to use of the compound and the composition in the prevention or treatment of diseases related to arginine vasopressin V1a receptor, arginine vasopressin V1b receptor, arginine vasopressin V2 receptor, sympathetic nervous system or renin-angiotensin-aldosterone system. The present application also provides a method for preventing and/or treating arginine vasopressin-related diseases.

Abstract: The present invention provides a method of preparing a recycled cementitious material by a phosphogypsum-assisted carbon sequestration pretreatment process. The method includes: (1) placing 100 mass parts of phosphogypsum, 1 to 2 mass parts of grinding aid, 10 to 20 mass parts of sodium-containing alkali component, 150 to 300 mass parts of zirconia balls, and 150 to 300 mass parts of water into a wet grinding tank for wet grinding. After 10 min to 30 min of wet grinding, introducing CO2 at a flow rate of 1.5 to 2.2 mass parts/min to keep a temperature of a wet grinding slurry below 40° C. When the wet grinding slurry reaches pH=10, ending the wet grinding and sieving out a wet grinding slurry; (2) mixing the wet grinding slurry with 700 to 1000 mass parts of slag and 100 to 350 mass parts of water to obtain a recycled cementitious material.

Abstract: A method of generating an IC layout diagram includes receiving a first gate resistance value of a gate region in an IC layout diagram, the first gate resistance value corresponding to a location of a gate via positioned within an active region and along a width of the gate region extending across the active region, determining a second gate resistance value based on the location and the width, using the first and second resistance values to determine that the IC layout diagram does not comply with a design specification, and based on the non-compliance with the design specification, modifying the IC layout diagram.

Abstract: Provided herein are retinoid X receptor alpha binders that specifically bind to an epitope of a retinoid X receptor alpha, wherein the epitope comprises a phosphorylated serine at position 56 or 70. Also provided herein are retinoid X receptor alpha/polo-like kinase 1 modulators that inhibit the interaction of a polo-like kinase 1 with a retinoid X receptor alpha comprising a phosphorylated serine at position 56 or 70.

Abstract: Disclosed herein is a cleaning device for orthokeratology lens, comprising a housing, a cap, a gear module, two cleaning shaft, two cleaning head, and a rotating shaft. The housing comprises two orthokeratology lens bases and an opening. The cap is disposed on the opening. The cleaning shaft comprises a first end connecting to the gear module and a second end. The cleaning head is disposed on the second end of the cleaning shaft. The rotating shaft connects to the gear module.

Abstract: A method of generating an integrated circuit (IC) layout diagram of an IC device includes receiving the IC layout diagram of the IC device, the IC layout diagram including a gate region having a width across an active region. The width is divided into a plurality of width segments based on a location of a gate via, and a simulation is performed based on the IC layout diagram and including an effective resistance calculated using at least one width segment of the plurality of width segments.

Abstract: The present invention discloses a method of preparing an alkali activation material by using red mud-based wet grinding and carbon sequestration and an application thereof. The preparation method includes: (1) adding water, red mud, a crystalline control agent, and a grinding aid into a wet grinding carbon sequestration apparatus to perform wet grinding, and simultaneously introducing CO2 until a slurry pH reaches 7 to 7.5; and removing wet grinding balls by a sieve to obtain a slurry A; (2) adding carbide slag, water and a water reducer to a wet planetary ball grinder tank for wet grinding, and removing wet grinding balls by a sieve to obtain a slurry B; (3) taking 50 to 80 parts of the slurry A and 20 to 50 parts of the slurry B and mixing them to obtain an alkali activation material.

Abstract: The present invention provides a method of preparing a recycled cementitious material by a phosphogypsum-assisted carbon sequestration pretreatment process. The method includes: (1) placing 100 mass parts of phosphogypsum, 1 to 2 mass parts of grinding aid, 10 to 20 mass parts of sodium-containing alkali component, 150 to 300 mass parts of zirconia balls, and 150 to 300 mass parts of water into a wet grinding tank for wet grinding. After 10 min to 30 min of wet grinding, introducing CO2 at a flow rate of 1.5 to 2.2 mass parts/min to keep a temperature of a wet grinding slurry below 40° C. When the wet grinding slurry reaches pH=10, ending the wet grinding and sieving out a wet grinding slurry; (2) mixing the wet grinding slurry with 700 to 1000 mass parts of slag and 100 to 350 mass parts of water to obtain a recycled cementitious material.