Patents by Inventor Ying-Tsung Chen
Ying-Tsung Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20240105460Abstract: A method of removing a hard mask is provided. Gate stacks are patterned on a substrate, where the gate stacks include a polysilicon layer and the hard mask deposited over the polysilicon layer. A dielectric layer is deposited on the substrate and on the patterned gate stacks. A first portion of the dielectric layer is planarized by chemical mechanical polishing (CMP) to remove a topography of the dielectric layer. The hard mask and a second portion of the dielectric layer are removed by the CMP.Type: ApplicationFiled: November 30, 2023Publication date: March 28, 2024Inventors: Che-Hao Tu, William Weilun Hong, Ying-Tsung Chen
-
Patent number: 11854821Abstract: A method of removing a hard mask is provided. Gate stacks are patterned on a substrate, where the gate stacks include a polysilicon layer and the hard mask deposited over the polysilicon layer. A dielectric layer is deposited on the substrate and on the patterned gate stacks. A first portion of the dielectric layer is planarized by chemical mechanical polishing (CMP) to remove a topography of the dielectric layer. The hard mask and a second portion of the dielectric layer are removed by the CMP.Type: GrantFiled: April 1, 2021Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Che-Hao Tu, William Weilun Hong, Ying-Tsung Chen
-
Publication number: 20230377898Abstract: Disclosed is a method of forming a semiconductor device. The method includes providing a precursor having a substrate and protrusions over the substrate. The protrusions are interposed by trenches. The method further includes depositing a first dielectric layer over the protrusions and filling the trenches. The first dielectric layer has a first hardness. The method further includes treating the first dielectric layer with an oxidizer. The method further includes performing a chemical mechanical planarization (CMP) process to the first dielectric layer.Type: ApplicationFiled: August 3, 2023Publication date: November 23, 2023Inventors: Wan-Chun Pan, William Weilun Hong, Ying-Tsung Chen
-
Publication number: 20230361062Abstract: A semiconductor device includes a device layer, a first passivation layer, an aluminum pad, a second passivation layer, an under-ball metallurgy (UBM) pad and a connector. The device layer is disposed over a substrate, wherein the device layer includes a top metal feature. The first passivation layer is disposed over the device layer. The aluminum pad penetrates through the first passivation layer and is electrically connected to the top metal feature. The second passivation layer is disposed over the aluminum pad. The UBM pad penetrates through the second passivation layer and is electrically connected to the aluminum pad. The connector is disposed over the UBM pad. In some embodiments, a first included angle between a sidewall and a bottom of the aluminum pad is greater than a second included angle between a sidewall and a bottom of the UBM pad.Type: ApplicationFiled: May 6, 2022Publication date: November 9, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Huan Fu, Ying-Tsung Chen, Jiun-Jie Huang, Wen-Han Hung, Jen-Pan Wang
-
Publication number: 20230326736Abstract: A cleaning system includes at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution. The cleaning system further includes a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module. The cleaning solution supply system includes at least one temperature control system. The at least one temperature control system includes a heating device configured to heat the cleaning solution, a cooling device configured to cool the cleaning solution, a temperature sensor configured to monitor a temperature of the cleaning solution, and a temperature controller configured to control the heating device and the cooling device.Type: ApplicationFiled: June 13, 2023Publication date: October 12, 2023Inventors: Ssutzu CHEN, Ying-Tsung CHEN, Ya-Ting TSAI, Gin-Chen HUANG, Kei-Wei CHEN
-
Patent number: 11694889Abstract: A cleaning system includes at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution. The cleaning system further includes a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module. The cleaning solution supply system includes at least one temperature control system. The at least one temperature control system includes a heating device configured to heat the cleaning solution, a cooling device configured to cool the cleaning solution, a temperature sensor configured to monitor a temperature of the cleaning solution, and a temperature controller configured to control the heating device and the cooling device.Type: GrantFiled: March 2, 2020Date of Patent: July 4, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ssutzu Chen, Gin-Chen Huang, Ya-Ting Tsai, Ying-Tsung Chen, Kei-Wei Chen
-
Publication number: 20230093717Abstract: In an embodiment, a method includes: forming a fin extending from a substrate; forming a first gate mask over the fin, the first gate mask having a first width; forming a second gate mask over the fin, the second gate mask having a second width, the second width being greater than the first width; depositing a first filling layer over the first gate mask and the second gate mask; depositing a second filling layer over the first filling layer; planarizing the second filling layer with a chemical mechanical polish (CMP) process, the CMP process being performed until the first filling layer is exposed; and planarizing the first filling layer and remaining portions of the second filling layer with an etch-back process, the etch-back process etching materials of the first filling layer, the second filling layer, the first gate mask, and the second gate mask at the same rate.Type: ApplicationFiled: November 28, 2022Publication date: March 23, 2023Inventors: Shu-Wei Hsu, Yu-Jen Shen, Hao-Yun Cheng, Chih-Wei Wu, Ying-Tsung Chen, Ying-Ho Chen
-
Publication number: 20220415665Abstract: A chemical mechanical planarization system includes a chemical mechanical planarization pad that rotates during a chemical mechanical planarization process. A chemical mechanical planarization head places a semiconductor wafer in contact with the chemical mechanical planarization pad during the process. A slurry supply system supplies a slurry onto the pad during the process. A pad conditioner conditions the pad during the process. An impurity removal system removes debris and impurities from the slurry.Type: ApplicationFiled: June 23, 2021Publication date: December 29, 2022Inventors: Te-Chien HOU, Po-Chin NIEN, Chih Hung CHEN, Ying-Tsung CHEN, Kei-Wei CHEN
-
Patent number: 11515403Abstract: In an embodiment, a method includes: forming a fin extending from a substrate; forming a first gate mask over the fin, the first gate mask having a first width; forming a second gate mask over the fin, the second gate mask having a second width, the second width being greater than the first width; depositing a first filling layer over the first gate mask and the second gate mask; depositing a second filling layer over the first filling layer; planarizing the second filling layer with a chemical mechanical polish (CMP) process, the CMP process being performed until the first filling layer is exposed; and planarizing the first filling layer and remaining portions of the second filling layer with an etch-back process, the etch-back process etching materials of the first filling layer, the second filling layer, the first gate mask, and the second gate mask at the same rate.Type: GrantFiled: November 27, 2019Date of Patent: November 29, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shu-Wei Hsu, Yu-Jen Shen, Hao-Yun Cheng, Chih-Wei Wu, Ying-Tsung Chen, Ying-Ho Chen
-
Publication number: 20210272798Abstract: A cleaning system includes at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution. The cleaning system further includes a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module. The cleaning solution supply system includes at least one temperature control system. The at least one temperature control system includes a heating device configured to heat the cleaning solution, a cooling device configured to cool the cleaning solution, a temperature sensor configured to monitor a temperature of the cleaning solution, and a temperature controller configured to control the heating device and the cooling device.Type: ApplicationFiled: March 2, 2020Publication date: September 2, 2021Inventors: Ssutzu Chen, Gin-Chen Huang, Ya-Ting Tsai, Ying-Tsung Chen, Kei-Wei Chen
-
Publication number: 20210225657Abstract: A method of removing a hard mask is provided. Gate stacks are patterned on a substrate, where the gate stacks include a polysilicon layer and the hard mask deposited over the polysilicon layer. A dielectric layer is deposited on the substrate and on the patterned gate stacks. A first portion of the dielectric layer is planarized by chemical mechanical polishing (CMP) to remove a topography of the dielectric layer. The hard mask and a second portion of the dielectric layer are removed by the CMP.Type: ApplicationFiled: April 1, 2021Publication date: July 22, 2021Inventors: Che-Hao Tu, William Weilun Hong, Ying-Tsung Chen
-
Publication number: 20210159325Abstract: In an embodiment, a method includes: forming a fin extending from a substrate; forming a first gate mask over the fin, the first gate mask having a first width; forming a second gate mask over the fin, the second gate mask having a second width, the second width being greater than the first width; depositing a first filling layer over the first gate mask and the second gate mask; depositing a second filling layer over the first filling layer; planarizing the second filling layer with a chemical mechanical polish (CMP) process, the CMP process being performed until the first filling layer is exposed; and planarizing the first filling layer and remaining portions of the second filling layer with an etch-back process, the etch-back process etching materials of the first filling layer, the second filling layer, the first gate mask, and the second gate mask at the same rate.Type: ApplicationFiled: November 27, 2019Publication date: May 27, 2021Inventors: Shu-Wei Hsu, Yu-Jen Shen, Hao-Yun Cheng, Chih-Wei Wu, Ying-Tsung Chen, Ying-Ho Chen
-
Patent number: 10971370Abstract: A method of removing a hard mask is provided. Gate stacks are patterned on a substrate, where the gate stacks include a polysilicon layer and the hard mask deposited over the polysilicon layer. A dielectric layer is deposited on the substrate and on the patterned gate stacks. A first portion of the dielectric layer is planarized by chemical mechanical polishing (CMP) to remove a topography of the dielectric layer. The hard mask and a second portion of the dielectric layer are removed by the CMP.Type: GrantFiled: December 16, 2019Date of Patent: April 6, 2021Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Che-Hao Tu, William Weilun Hong, Ying-Tsung Chen
-
Publication number: 20200126803Abstract: Disclosed is a method of forming a semiconductor device. The method includes providing a precursor having a substrate and protrusions over the substrate. The protrusions are interposed by trenches. The method further includes depositing a first dielectric layer over the protrusions and filling the trenches. The first dielectric layer has a first hardness. The method further includes treating the first dielectric layer with an oxidizer. The method further includes performing a chemical mechanical planarization (CMP) process to the first dielectric layer.Type: ApplicationFiled: December 19, 2019Publication date: April 23, 2020Inventors: Wan-Chun Pan, William Weilun Hong, Ying-Tsung Chen
-
Publication number: 20200118827Abstract: A method of removing a hard mask is provided. Gate stacks are patterned on a substrate, where the gate stacks include a polysilicon layer and the hard mask deposited over the polysilicon layer. A dielectric layer is deposited on the substrate and on the patterned gate stacks. A first portion of the dielectric layer is planarized by chemical mechanical polishing (CMP) to remove a topography of the dielectric layer. The hard mask and a second portion of the dielectric layer are removed by the CMP.Type: ApplicationFiled: December 16, 2019Publication date: April 16, 2020Inventors: Che-Hao Tu, William Weilun Hong, Ying-Tsung Chen
-
Patent number: 10541139Abstract: A method of forming a semiconductor device includes forming fins on a substrate, depositing a gate layer having a first material on the fins, and depositing a sacrificial layer having a second material on the gate layer. The method further includes removing a first portion of the sacrificial layer using a first slurry or etchant having a first selectivity of second material to first material. The method further includes removing a first portion of the gate layer and a second portion of the sacrificial layer using a second slurry or etchant having a second selectivity of second material to first material to form a planarized gate layer. The first selectivity is greater than the second selectivity. An example benefit includes reduced dependency of the gate layer planarization process on underlying structure density and reduced variation in thickness of the gate layer on device structures across a wafer.Type: GrantFiled: March 24, 2016Date of Patent: January 21, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Po-Chin Nien, William Weilun Hong, Ying-Tsung Chen
-
Patent number: 10522365Abstract: Disclosed is a method of forming a semiconductor device. The method includes providing a precursor having a substrate and protrusions over the substrate. The protrusions are interposed by trenches. The method further includes depositing a first dielectric layer over the protrusions and filling the trenches. The first dielectric layer has a first hardness. The method further includes treating the first dielectric layer with an oxidizer. The method further includes performing a chemical mechanical planarization (CMP) process to the first dielectric layer.Type: GrantFiled: June 14, 2016Date of Patent: December 31, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wan-Chun Pan, William Weilun Hong, Ying-Tsung Chen
-
Patent number: 10510552Abstract: A method of removing a hard mask is provided. Gate stacks are patterned on a substrate, where the gate stacks include a polysilicon layer and the hard mask deposited over the polysilicon layer. A dielectric layer is deposited on the substrate and on the patterned gate stacks. A first portion of the dielectric layer is planarized by chemical mechanical polishing (CMP) to remove a topography of the dielectric layer. The hard mask and a second portion of the dielectric layer are removed by the CMP.Type: GrantFiled: April 20, 2018Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manfacturing Company, Ltd.Inventors: Che-Hao Tu, William Weilun Hong, Ying-Tsung Chen
-
Patent number: 10269567Abstract: A method includes forming a first insulating layer over a substrate, the first insulating layer having a non-planar top surface, the first insulating layer having a first etch rate. A second insulating layer is formed over the first insulating layer, the second insulating layer having a non-planar top surface, the second insulating layer having a second etch rate, the second etch rate being greater than the first etch rate. The second insulating layer is polished, the polishing partially removing the second insulating layer. The first insulating layer and the second insulating layer are non-selectively recessed.Type: GrantFiled: September 11, 2017Date of Patent: April 23, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Teng-Chun Tsai, Yung-Cheng Lu, Ying-Tsung Chen, Tien-I Bao
-
Patent number: 10068988Abstract: A method includes forming a polysilicon layer with an uneven upper surface over a first region and a second region of a substrate, doping a top portion of the polysilicon layer to change its removal rate, thereby forming a doped layer, and removing the doped layer in the first region to expose the polysilicon layer in the first region and leaving at least a portion of the doped layer in the second region. The method also includes removing the exposed polysilicon layer in the first region at a first removal rate and the doped layer in the second region at a second removal rate, the polysilicon layer in the second region being exposed after the doped layer in the second region is removed, and removing the polysilicon layer in the first region and the second region at a third removal rate and a fourth removal rate, respectively.Type: GrantFiled: January 2, 2018Date of Patent: September 4, 2018Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: William Weilun Hong, Po-Chin Nien, Ying-Tsung Chen