Abstract: A vehicle seat assembly, suitable for vehicles such as locomotives and the like, includes a main cushion body and a lifting cushion. The main cushion body has a sliding cushion connected to a vehicle body with a sliding structure. The lifting cushion is connected to the vehicle body with a linkage mechanism. The lifting cushion is moved into a carriage when the sliding cushion is in a first position, and when the sliding cushion slides laterally into a second position to form a space portion, the lifting cushion can be lifted from the carriage and moved into the space portion and then positioned, or can be lowered into the carriage again, so that the sliding cushion can be moved back to the first position, thereby allowing the user to adjust seat cushion length according to their needs.

Abstract: A method of motion adaptive spatial smoothing includes determining a difference of a block duty of a selected block of a current frame and a block duty of the selected block of a previous frame, generating an original smoothing matrix for the selected block, generating a motion adaptive matrix according to the original smoothing matrix and a difference of the block duty of the selected block of the current frame and the block duty of the selected block of the previous frame, updating a block duty for each block with a corresponding motion adaptive matrix to generate an updated frame, and performing spatial smoothing for the updated frame.

Abstract: The present disclosure relates to semiconductor processing methods for anisotropic film growth. The method includes heating a substrate positioned in a processing chamber. The method includes flowing one or more process gases over the substrate. The one or more process gases include trichlorosilane (TCS) and hydrochloric acid. The method includes depositing one or more layers on one or more fins on the substrate. The deposition of the one or more layers includes forming the one or more layers at a first growth rate along a first dimension and a second growth rate along a second dimension, and the second growth rate is faster than the first growth rate.

Abstract: Aspects of the present disclosure relate to apparatus, systems, and methods of using atomic hydrogen radicals with epitaxial deposition. In one aspect, nodular defects (e.g., nodules) are removed from epitaxial layers of substrate. In one implementation, a method of processing substrates includes selectively growing an epitaxial layer on one or more crystalline surfaces of a substrate. The epitaxial layer includes silicon. The method also includes etching the substrate to remove a plurality of nodules from one or more non-crystalline surfaces of the substrate. The etching includes exposing the substrate to atomic hydrogen radicals. The method also includes thermally annealing the epitaxial layer to an anneal temperature that is 600 degrees Celsius or higher.

Abstract: Systems and methods for multi-level pulsing are described. The systems and methods include generating four or more states. During each of the four or more states, a radio frequency (RF) generator generates an RF signal. The RF signal has four or more power levels, and each of the four or more power levels corresponds to the four or more states. The multi-level pulsing facilitates a finer control in processing a substrate.

Abstract: Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

Abstract: A connector system having a pair of connector components capable of being used as a reuseable aseptic connection in bioprocessing and/or cell manufacturing processes. Each connector component includes a connector housing having a mating surface with an opening and a door moveable to close and open the opening, and a connector assembly therein. The connector assembly includes a base member having a fluid port; an engagement piece having a pusher portion; and a valve unit therebetween, the valve unit having a resilient deformable valve member. The pusher portion is moveable to cause the pusher portion to urge open the resilient deformable valve member for enabling the fluid flow. When the pair of connector components are interlocked, the doors open and the connector assemblies move and engage with each other through the openings causing the resilient deformable valve members to open for establishing a fluid connection.

Abstract: Systems and methods for compressing data are described. One of the methods includes receiving a plurality of measurement signals from one or more sensors coupled to a radio frequency (RF) transmission path of a plasma tool. The RF transmission path is from an output of an RF generator to an electrode of a plasma chamber. The method includes converting the plurality of measurement signals from an analog form to a digital form to sample data and processing the data to reduce an amount of the data. The amount of the data is compressed to output compressed data. The method includes sending the compressed data to a controller for controlling the plasma tool.

Abstract: Embodiments of the present disclosure provide a pre-welding addressing method and system.

Abstract: Embodiments of the present disclosure relate to chamber kits, processing chambers, and related methods and components for gas activation applicable for semiconductor manufacturing. In one or more embodiments, a processing chamber includes a chamber body and one or more heat sources configured to heat a processing volume of the chamber body. The chamber body includes one or more gas inject passages formed in the chamber body, and one or more gas exhaust passages formed in the chamber body. The processing chamber includes a first pre-heat ring that includes a first opaque surface, and a second pre-heat ring that includes a second opaque surface. The first pre-heat ring and the second pre-heat ring define a first gas flow path between the first opaque surface and the second opaque surface, and the first gas flow path in fluid communication with at least one of the one or more gas inject passages.

Abstract: Provided a post welding method and a post welding system. The post welding method includes: addressing, under a guidance based on product data of a product to be welded, at least one cell post in the product to be welded, to obtain an addressing coordinate set of the at least one cell post, where the product data represents a product structure of the product to be welded, and the addressing coordinate set of the at least one cell post represents a position of the at least one cell post in the product to be welded in a current environment; and determining a welding coordinate set of the at least one cell post based on the addressing coordinate set of the at least one cell post, to implement, based on the welding coordinate set of the at least one cell post, electrical connections between cells in the product to be welded.

Abstract: Provided are a welding system and a spot check method for a welding system. The welding system includes a controller, a human-machine interface, and a welding device. The spot check method for a welding system includes: controlling a rangefinder in a welding device to perform ranging, along a first direction, of at least two posts in a battery product to be welded, so as to obtain a set of ranging values between the at least two posts and the rangefinder, the first direction being parallel to an optical axis of a laser galvanometer in the welding device, the rangefinder being calibrated based on a first position in the first direction, the first position being a position of a focal point of the laser galvanometer in the first direction, and the rangefinder being at a fixed distance from the laser galvanometer in the first direction.

Abstract: Embodiments of the present disclosure provide a battery welding system and a control method therefor. The battery welding system includes a welding module including a welding apparatus, a driving assembly and a plurality of range finders, wherein at least some of the range finders are connected to a driving end of the driving assembly, and the driving assembly drives the range finders to move in a first direction such that a separation distance between the range finders in the first direction changes. In the battery welding system in the embodiments of the present disclosure, the driving assembly driving the range finders to move enables the separation distance between the range finders in the first direction to change, so that the separation distance between the range finders can correspond to a separation distance between regions to be welded on the battery without disassembling the range finders.

Abstract: A pre-welding positioning system includes a frame body, a controller, a three-axis mechanism arranged on the frame body, and a vision acquisition system and a fixing component arranged on the three-axis mechanism. The controller is configured to control the three-axis mechanism to move to a designated position based on product information of a battery pack to be welded. The vision acquisition system is configured to acquire, at the designated position, an image of a positioning component of the battery pack, in response to the three-axis mechanism reaching the designated position, and determine a distance deviation value between the positioning component and a preset reference point based on the acquired detection image. The controller is further configured to control the three-axis mechanism to drive the fixing component to the positioning component based on the distance deviation value to fix the battery pack to the frame body by the fixing component.

Abstract: A coupling system includes a chip configured to receive an optical signal, wherein an angle between a propagation direction of the optical signal and a top surface of the chip ranges from about 92-degrees to about 88-degrees. The chip includes a grating configured to receive the optical signal; and a waveguide, wherein the grating is configured to receive the optical signal and redirect the optical signal along the waveguide, and the grating is on a light incident side of the waveguide.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a base portion and a fin portion over the base portion. The semiconductor device structure includes an isolation layer over the base portion and surrounding the fin portion. The semiconductor device structure includes a metal gate stack over the isolation layer and wrapping around an upper part of the fin portion. The metal gate stack includes a gate dielectric layer and a metal gate electrode layer over the gate dielectric layer, and the gate dielectric layer includes fluorine. A first part of the isolation layer is not covered by the metal gate stack, the first part includes fluorine, and a first concentration of fluorine in the first part increases toward a first top surface of the first part.

Abstract: A luminance control circuit and a luminance control method are provided. The luminance control circuit includes a first converter, average pixel level (APL) calculator, a luminance adjusting circuit and a second converter. The first converter converts a gray level result of an image data into at least one luminance. The APL calculator generates an APL value according to the at least one luminance. The luminance adjusting circuit generates at least one adjusting value according to the APL value and adjust the at least one luminance to be at least one adjusted luminance using the least one adjusting value. The second converter converts the at least one adjusted luminance into an adjusted gray level result of the image data. The adjusted gray level result is negative correlated with the APL value.

Abstract: The disclosure provides a liquid-cooling device and an electronic device. The liquid-cooling device includes an accommodation housing and a liquid-cooling assembly. The accommodation housing has an accommodation structure. The liquid-cooling assembly includes at least one liquid-cooling heat exchanger, a cold plate and a tubing. The at least one liquid-cooling heat exchanger is located in the accommodation structure. The cold plate is covered on the accommodation housing and covers the accommodation structure. The tubing is connected to the at least one liquid-cooling heat exchanger and penetrates through the cold plate.

Abstract: A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.

Abstract: A physical vapor deposition (PVD) system is provided. The PVD system includes a PVD chamber defining a PVD volume within which a target material of a target is deposited onto a wafer. The PVD system includes the target in the PVD chamber. The target is configured to overlie the wafer. An edge of the target extends from a first surface of the target to a second surface of the target, opposite the first surface of the target. A first portion of the edge of the target has a first surface roughness. The first portion of the edge of the target extends at most about 6 millimeters from the first surface of the target to a second portion of the edge of the target. The second portion of the edge of the target has a second surface roughness less than the first surface roughness.