Abstract: The present invention is an adhesive composition for stabilizing an electrical conductor. The adhesive composition includes a base polymer and an additive for absorbing UV light, such as a benzotriazole or a benzophenone. When the adhesive composition is in contact with the electrical conductor, the electrical conductor has less than about a 20% change in electrical resistance over a period of about 500 hours.

Abstract: Technology is disclosed for snippet pre-translation and dynamic selection of translation systems. Pre-translation uses snippet attributes such as characteristics of a snippet author, snippet topics, snippet context, expected snippet viewers, etc., to predict how many translation requests for the snippet are likely to be received. An appropriate translator can be dynamically selected to produce a translation of a snippet either as a result of the snippet being selected for pre-translation or from another trigger, such as a user requesting a translation of the snippet. Different translators can generate high quality translations after a period of time or other translators can generate lower quality translations earlier. Dynamic selection of translators involves dynamically selecting machine or human translation, e.g., based on a quality of translation that is desired.

Abstract: A SAPO-34 molecular sieve and method for preparing the same, whose chemical composition in the anhydrous state is expressed as: mSDA.(SixAlyPz)O2, wherein m is 0.08-0.3, x is 0.01-0.60, y is 0.2-0.60, z is 0.2-0.60, and x+y+z=1. The template agent SDA is in micropores of the molecular sieve. SDA is an organic amine with the structural formula (CH3)2NRN(CH3)2, wherein R is a saturated straight-chain or branched-chain alkylene group with having from 2-5 carbon atoms. There is a slight Si enrichment phenomenon on the crystal surface of the molecular sieve crystal, and the ratio of the surface Si content to the bulk Si content of the crystal ranges from 1.50-1.01. Said SAPO-34 molecular sieve, after being calcined at a temperature range from 400-700° C. in air, can be used as a gas adsorbent and catalyst for an acid-catalyzed reaction or oxygenate to olefin reaction.

Abstract: A immunogenic composition is provided for use in methods for treating or preventing the development of a cancer, comprising a nucleic acid sequence encoding a cancer antigen and a nucleic acid sequence encoding fibroblast activation protein (FAP). In one embodiment, the composition comprises a vector comprising a first expression cassette comprising a nucleic acid sequence encoding an antigen of a, operatively linked to an expression control sequence that directs the expression of the antigen in a mammalian host cell. The composition further contains a vector comprising a second expression cassette comprising a nucleic acid sequence encoding fibroblast activation protein (FAP) operatively linked to an expression control sequence directing the expression of FAP in a mammalian host cell. In one embodiment, the cancer is one in which tumor progression depends on the fibroblasts expressing fibroblast activation protein (FAP).

Abstract: Embodiments described herein relate to methods for etching a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment to implant ions into a spacer material, performing an etching process on an implanted region of the spacer material, and repeating the inert plasma treatment and the etching process to form a predominantly flat top spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as pressure, may be controlled to influence a desired spacer profile.

Abstract: The present invention features compounds having soluble epoxide hydrolase inhibitory activity. The compounds of the invention, alone or in combination with other pharmaceutically active agents, can be used for treating or preventing various medical conditions, such as cardiovascular diseases, respiratory diseases, inflammation, and diabetes.

Abstract: Embodiments described herein generally relate to a substrate processing system, such as an etch processing system. In one embodiment, a substrate processing system is disclosed herein. The substrate processing system includes a transfer chamber and a plurality of process chambers coupled to the transfer chamber. The plurality of process chambers includes a first process chamber, a second process chamber, and a third process chamber. The first process chamber is configured to directionally modify a surface of a film stack formed on the substrate. The second process chamber is configured to deposit an etchant on the surface of the film stack. The third process chamber is configured to expose the film stack to a high-temperature sublimation process.

Abstract: A pixel unit, including: a pixel electrode, a gate electrode, a gate electrode line connected with the gate electrode, a source electrode, a data line connected with the source electrode, a second electrode disposed in a same layer as the pixel electrode, a first drain electrode connected with the pixel electrode, and a second drain electrode connected with the second electrode; the first drain electrode and the second drain electrode and the source electrode are provided with a channel therebetween, and the first drain electrode and the second drain electrode do not contact each other; along a direction of the data line, the edge of the second electrode is parallel with the edge of the pixel electrode and the two do not contact. An array substrate, a pixel driving method and a display device are further disclosed for overcoming the phenomenon of light leakage of the edge of the pixel unit caused by reduction of the width of the black matrix.

Abstract: A replacement metal gate transistor is described. Various examples provide a replacement metal gate transistor including a trench, a first sidewall and a second sidewall. A layer is disposed in the trench where the layer has a bottom section disposed on a bottom of the trench and sidewall sections disposed on the first and second sidewalls, wherein the sidewall sections of the layer are at least 50% thinner than the bottom section of the layer.

Abstract: A method of manufacturing an article includes providing a component for an etch reactor. Ion beam sputtering with ion assisted deposition (IBS-IAD) is then performed to deposit a protective layer on at least one surface of the component, wherein the protective layer is a plasma resistant film having a thickness of less than 1000 ?m.

Abstract: Embodiments described herein relate to methods for patterning a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment on a spacer material, performing an etching process on a treated region of the spacer material, and repeating the inert plasma treatment and the etching process to form a desired spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as process gas ratios and pressures, may be controlled to influence a desired spacer profile.

Abstract: A medical device including an array of microneedles and a coating disposed on or within the microneedles and a method of making such a device are disclosed. The coating includes a peptide therapeutic agent and an amino acid. A method of stabilizing a peptide therapeutic agent with an amino acid on an array of microneedles is also disclosed. In some cases, the peptide therapeutic agent and the amino acid either both have a net positive charge or both have a net negative charge. In some cases, the peptide therapeutic agent is histidine.

Abstract: This invention relates to a gradient amplifier system for driving a gradient coil and a configuration method thereof. The gradient amplifier system comprises a gradient amplifier for driving a gradient current through the gradient coil, wherein the gradient amplifier further comprises a gradient filter; a controller coupled to the gradient amplifier for controlling the gradient current in the gradient coil; a feedback loop for feeding only the gradient current in the gradient coil back to the controller, wherein the controller is configured based on only the fedback gradient current in the gradient coil, and wherein filter parameters of the gradient filter are adjusted to achieve a minimum shift between predetermined poles representing a desired performance of the gradient amplifier system (21) and actual poles of a rational transfer function associated with the controller.

Abstract: A load cell has four resistive strain gauges, a digital-to-analog conversion circuit and a signal processor. The signal processor can output a real-time load stress value Fn and a real-time state information matrix St. A weighing network is made of a load cell array composed of a plurality of the load cells, a collection device for collecting external information, and a control terminal. Further proposed in the present invention is a monitoring method for a weighing network, applied to the aforementioned weighing network, wherein the control terminal collects real-time external information, and a real-time load stress value Fn and a real-time state information matrix St for each load cell in real time; and compares the real-time external information, and the real-time load stress value Fn and the real-time state information matrix St for each load cell with data stored in a weighing process database to monitor the state of the weighing network.

Abstract: A digital load cell has a force measurement element, a power incentive module, a signal detection module, a microprocessor, a communication module, a current control module and a configuration control module. First configuration control information configures the signal detection module to use a corresponding detection mode to perform signal conversion. Second configuration control information configures the processor to use one or more corresponding kernels or processors for running. Third configuration control information configures the communication module to use a corresponding communication protocol, terminal matching and impedance control for communication. Fourth configuration control information configures the current control module to use the on/off, voltage values and current values of the power incentive module, the signal detection module, the microprocessor and the communication module.

Abstract: A method for coating a component for use in a semiconductor chamber for plasma etching includes providing the component and loading the component in a deposition chamber. A pressure in the deposition chamber is reduced to below atmospheric pressure. A coating is deposited on the component by spraying an aerosol comprising a suspension of a first type of metal oxide nanoparticle and a second type of metal oxide nanoparticle onto the component at approximately room temperature.

Abstract: A method of manufacturing an article comprises providing a ring for an etch reactor. Ion assisted deposition (IAD) is then performed to deposit a protective layer on at least one surface of the ring, wherein the protective layer is a plasma resistant rare earth oxide film having a thickness of less than 300 ?m and an average surface roughness of less than 6 micro-inches.

Abstract: A method is implemented by a network device to monitor the performance of packet processing in an in-line service chain, the network device one of a plurality of network devices forming a software defined network (SDN) and the in-line service chain. The SDN includes a controller to configure the plurality of network devices. The method includes receiving a sequence of packets of a data flow traversing the in-line service chain, applying a hash function to the sequence of packets of the data flow to generate a set of hash values for the sequence of packets, and sending the set of hash values and a set of timestamps for the sequence of packets to the controller to determine delay and loss across a service of the in-line service chain.

Abstract: The present disclosure provides methods for forming nanowire spacers for nanowire structures with desired materials in horizontal gate-all-around (hGAA) structures for semiconductor chips. In one example, a method of forming nanowire spaces for nanowire structures on a substrate includes performing a lateral etching process on a substrate having a multi-material layer disposed thereon, wherein the multi-material layer including repeating pairs of a first layer and a second layer, the first and second layers each having a first sidewall and a second sidewall respectively exposed in the multi-material layer, wherein the lateral etching process predominately etches the second layer through the second layer forming a recess in the second layer, filling the recess with a dielectric material, and removing the dielectric layer over filled from the recess.

Abstract: The present invention provides compositions, devices, methods and processes related to the intradermal delivery of PTHrP and PTHrP analogues, particularly [Glu22,25, Leu23,28,31, Aib29, Lys26,30]hPTHrP(1-34)NH2.