Abstract: The present invention relates to threat protection, in particular a system and method providing active protection using at least one UAV, e.g., drone, to neutralize an incoming aerial or ground threat or diminish or prevent damage caused, directly or indirectly, from the incoming threat.

Abstract: A low cost passive RFID tag uses capacitive or inductive coupling between the RF IC chip and the antenna. Coupling elements are formed directly on the surface of the RF IC chip.

Abstract: A flip-bonded dual-substrate inductor includes a base substrate, a first inductor body portion provided on a surface of the base substrate, a cover substrate, a second inductor body portion provided on a surface of a cover substrate, and a nanoparticle bonding material provided between the base substrate surface and the cover substrate surface to electrically connect the first inductor body portion and the second inductor body portion. A method for fabricating a flip-bonded dual-substrate inductor including forming a first inductor body portion on a surface of a base substrate, forming a second inductor body portion on a surface of a cover substrate, and attaching the base substrate surface to the cover substrate surface using a nanoparticle bonding material that electrically connects the first inductor body portion and the second inductor body portion.

Abstract: A flip-bonded dual-substrate inductor includes a base substrate, a first inductor body portion provided on a surface of the base substrate, a cover substrate, a second inductor body portion provided on a surface of a cover substrate, and a nanoparticle bonding material provided between the base substrate surface and the cover substrate surface to electrically connect the first inductor body portion and the second inductor body portion. A method for fabricating a flip-bonded dual-substrate inductor including forming a first inductor body portion on a surface of a base substrate, forming a second inductor body portion on a surface of a cover substrate, and attaching the base substrate surface to the cover substrate surface using a nanoparticle bonding material that electrically connects the first inductor body portion and the second inductor body portion.

Abstract: The specification describes an integrated passive device (IPD) that is formed on a silicon substrate covered with an oxide layer. Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. The trapping centers are produced by a polysilicon layer interposed between the silicon substrate and the oxide layer.

Abstract: The specification describes a thin film Integrated Passive Device (IPD) design that achieves isolation between conductive runners by shielding the top and bottom regions of a noisy runner with metal shield plates. The shield plates are derived from metal interconnect layers. The invention can be implemented by merely modifying the mask pattern for the metal interconnect layers. No added elements or steps are needed to fabricate the IPDs. The invention is suitable for use in Multi-Chip Modules (MCMs) or other arrangements where digital circuits and RF circuits are in close proximity.

Abstract: Balun transformers are described wherein multiple transformer loops are implemented in a stacked design with the primary and secondary loops overlying one another. By aligning the loops in a vertical direction, instead of offsetting the loops, the area of the device is reduced. Multiple transformer loops are nested on each level, and the transformer loops on a given level are connected together using a crossover located on a different level.

Abstract: A low cost passive RFID tag uses capacitive or inductive coupling between the RF IC chip and the antenna. Coupling elements are formed directly on the surface of the RF IC chip.

Abstract: Balun transformers are described wherein multiple transformer loops are implemented in a stacked design with the primary and secondary loops overlying one another. By aligning the loops in a vertical direction, instead of offsetting the loops, the area of the device is reduced. Multiple transformer loops are nested on each level, and the transformer loops on a given level are connected together using a crossover located on a different level.

Abstract: The specification describes an integrated passive device (IPD) that is formed on a polysilicon substrate. A method for making the IPD is disclosed wherein the polysilicon substrate is produced starting with a single crystal handle wafer, depositing a thick substrate layer of polysilicon on one or both sides of the starting wafer, forming the IPD on one of the polysilicon substrate layers, and removing the handle wafer. In a preferred embodiment the single crystal silicon handle wafer is a silicon wafer rejected from a single crystal silicon wafer production line.

Abstract: An RF/IPD package with improved thermal management is described. The IPD substrate is attached to a system substrate with a thin RF chip mounted in the standoff between the IPD substrate and the system substrate. RF interconnections are made between the top of the RF chip and the bottom of the IPD substrate. Heat sinking is provided by bonding a heat sink layer on the RF chip to a heat sink layer on the system substrate. The heat sink may also serve as a ground plane connection. Combinations of other types of integrated devices may be fabricated using this approach.

Abstract: The specification describes a multi-chip module (MCM) that contains an integrated passive device (IPD) as the carrier substrate (IPD MCM). Parasitic electrical interactions are controlled at one or both interfaces of the IPD either by eliminating metal from the interfaces, or by selective use of metal in parts of the MCM that are remote from the sensitive device components. The sensitive device components are primarily analog circuit components, especially RF inductor elements. In the IPD layout, the sensitive components are segregated from other components. This allows implementation of the selective metal approach. It also allows parasitic interactions on top of the IPD substrate to be reduced by selective placement of IC semiconductor chips and IC chip ground planes. In preferred embodiments of the IPD MCM of the invention, the IPD substrate is polysilicon, to further minimize RF interactions. The various methods of assembling the module may be adapted to keep the overall thickness within 1.0 mm.

Abstract: The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover (second) substrate. The cover substrate is then flip bonded to the base substrate, thus mating the two portions of the inductor. Using this approach, a two level inductor can be constructed without using a multilevel substrate. Using two two-level substrates yields a four-level flip bonded dual substrate inductor.

Abstract: The specification describes a thin film Integrated Passive Device (IPD) design that achieves isolation between conductive runners by shielding the top and bottom regions of a noisy runner with metal shield plates. The shield plates are derived from metal interconnect layers. The invention can be implemented by merely modifying the mask pattern for the metal interconnect layers. No added elements or steps are needed to fabricate the IPDs. The invention is suitable for use in Multi-Chip Modules (MCMs) or other arrangements where digital circuits and RF circuits are in close proximity.

Abstract: The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover (second) substrate. The cover substrate is then flip bonded to the base substrate, thus mating the two portions of the inductor. Using this approach, a two level inductor can be constructed without using a multilevel substrate. Using two two-level substrates yields a four-level flip bonded dual substrate inductor.

Abstract: The specification describes an integrated passive device (IPD) that is formed on a polysilicon substrate. A method for making the IPD is disclosed wherein the polysilicon substrate is produced starting with a single crystal handle wafer, depositing a thick substrate layer of polysilicon on one or both sides of the starting wafer, forming the IPD on one of the polysilicon substrate layers, and removing the handle wafer. In a preferred embodiment the single crystal silicon handle wafer is a silicon wafer rejected from a single crystal silicon wafer production line.

Abstract: The specification describes an integrated passive device (IPD) that is formed on a silicon substrate covered with an oxide layer. Unwanted accumulated charge at the silicon/oxide interface are rendered immobile by creating trapping centers in the silicon surface. The trapping centers are produced by a polysilicon layer interposed between the silicon substrate and the oxide layer.

Abstract: The specification describes an integrated passive device (IPD) that is formed on a polysilicon substrate. A method for making the IPD is disclosed wherein the polysilicon substrate is produced starting with a single crystal handle wafer, depositing a thick substrate layer of polysilicon on one or both sides of the starting wafer, forming the IPD on one of the polysilicon substrate layers, and removing the handle wafer. In a preferred embodiment the single crystal silicon handle wafer is a silicon wafer rejected from a single crystal silicon wafer production line.

Abstract: The specification describes a new composite IPD substrate material with properties that are compatible with highly integrated thin film structures. The new composite substrate is a laminate of a wafer of single crystal silicon and a wafer of an insulator. The composite is produced at the wafer level by bonding the silicon wafer and the insulating wafer together. This substantially reduces the time to process the substrate, and the cost. The insulator of the insulating wafer may be an organic or inorganic material with a resistivity greater than 500 ohm cm.

Abstract: The specification describes SDIO devices and SDIO cards wherein the SDIO devices are provided with enhanced functionality, and the SDIO cards are provided with enhanced IC capacity. A variety of multi-chip-module (MCM) approaches are used to increase the IC capacity of the SDIO card.