Abstract: An apparatus comprises a conductive structure, another conductive structure, and a laminate spacer structure interposed between the conductive structure and the another conductive structure in a first direction. The laminate spacer structure comprises a dielectric spacer structure, another dielectric spacer structure, and an additional dielectric spacer structure interposed between the dielectric spacer structure and the another dielectric spacer structure. The additional dielectric spacer structure comprises at least one dielectric material, and gas pockets dispersed within the at least one dielectric material. Additional apparatuses, memory devices, electronic systems, and a method of forming an apparatus are also described.

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a device including tiers of materials located one over another, the tiers of materials including respective memory cells and control gates for the memory cells. The control gates include respective portions that collectively form part of a staircase structure. The staircase structure includes first regions and second regions coupled to the first regions. The second regions include respective sidewalls in which a portion of each of the first regions and a portion of each of the second regions are part of a respective control gate of the control gates. The device also includes conductive pads electrically separated from each other and located on the first regions of the staircase structure, and conductive contacts contacting the conductive pads.

Abstract: In some implementations, a method of wireless communications between a wireless communications network and wireless user equipment includes receiving, using a primary Time Division Duplex (TDD) configuration, data on a primary component carrier in a first frequency band. Using a secondary TDD configuration, data on a secondary component carrier is received in a second frequency band different from the first frequency band. A Hybrid Automatic Repeat Request (HARQ) for data received on the secondary component carrier is transmitted using a supplemental TDD configuration. A transmission or retransmission on the secondary component carrier uses a supplemental TDD configuration as well. The supplemental TDD configuration is different from the secondary TDD configuration. Furthermore, an uplink supplemental configuration may be different from a downlink supplemental configuration.

Abstract: A memory array comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Operative channel-material strings of memory cells extend through the insulative tiers and the conductive tiers. Intervening material is laterally-between and longitudinally-along immediately-laterally-adjacent of the memory blocks. The intervening material comprises longitudinally-alternating first and second regions that individually have a vertically-elongated seam therein. The vertically-elongated seam in the first regions are taller than in the second regions. Additional embodiments, including method, are disclosed.

Abstract: The present invention discloses a combination of vaccine strains for treating, preventing, relieving or controlling Canine Distemper, Canine Parvovirus Enteritis and Canine Infectious Hepatitis, comprising: Canine Distemper virus vaccine strain with the microorganism deposition accession number CGMCC No. 19397, Canine Parvovirus vaccine strain with the microorganism deposition accession number CGMCC No. 19398 and Canine Infectious Hepatitis virus vaccine strain with the microorganism deposition accession number CGMCC No. 19396. The three vaccine strains of the combination of vaccine strains are low in toxicity and good in immunogenicity. The present invention further discloses a live vaccine composition using the above-mentioned combination of vaccine strains as immunogen. The vaccine composition is safe and effective.

Abstract: An oral capsule and a method for filling a capsule after directly mixing powders, the oral capsule comprising a composition for the oral capsule and a capsule shell, the composition for the oral capsule comprising zanubrutinib, a filler, a disintegrant, a wetting agent, a glidant, a lubricant, and optionally a binder. The composition for the capsule is capable of obtaining satisfactory product stability, dissolution properties that meet bioavailability standards, a preparation process consistent with production equipment, and reasonable production costs. In addition, the method is a non-granulating process, which may simplify the overall process steps and reduce the impact of the preparation process on product bioavailability.

Abstract: A microelectronic device comprises a stack structure comprising insulative levels vertically interleaved with conductive levels. The conductive levels individually comprise a first conductive structure, and a second conductive structure laterally neighboring the first conductive structure, the second conductive structure exhibiting a concentration of 3-phase tungsten varying with a vertical distance from a vertically neighboring insulative level. The microelectronic device further comprises slot structures vertically extending through the stack structure and dividing the stack structure into block structures, and strings of memory cells vertically extending through the stack structure, the first conductive structures between laterally neighboring strings of memory cells, the second conductive structures between the slot structures and strings of memory cells nearest the slot structures. Related memory devices, electronic systems, and methods are also described.

Abstract: In some implementations, a method of wireless communications between a wireless communications network and wireless user equipment includes receiving, using a primary Time Division Duplex (TDD) configuration, data on a primary component carrier in a first frequency band. Using a secondary TDD configuration, data on a secondary component carrier is received in a second frequency band different from the first frequency band. A Hybrid Automatic Repeat Request (HARQ) for data received on the secondary component carrier is transmitted using a supplemental TDD configuration. A transmission or retransmission on the secondary component carrier uses a supplemental TDD configuration as well. The supplemental TDD configuration is different from the secondary TDD configuration. Furthermore, an uplink supplemental configuration may be different from a downlink supplemental configuration.

Abstract: Some embodiments include an integrated assembly having a first structure containing semiconductor material, and having a second structure contacting the first structure. The first structure has a composition along an interface with the second structure. The composition includes additive to a concentration within a range of from about 1018 atoms/cm3 to about 1021 atoms/cm3. The additive includes one or more of carbon, oxygen, nitrogen and sulfur. Some embodiments include methods of forming integrated assemblies.

Abstract: Some embodiments include an integrated assembly having a first structure containing semiconductor material, and having a second structure contacting the first structure. The first structure has a composition along an interface with the second structure. The composition includes additive to a concentration within a range of from about 1018 atoms/cm3 to about 1021 atoms/cm3. The additive includes one or more of carbon, oxygen, nitrogen and sulfur. Some embodiments include methods of forming integrated assemblies.

Abstract: A microelectronic device comprises a stack structure comprising insulative levels vertically interleaved with conductive levels. The conductive levels individually comprise a first conductive structure, and a second conductive structure laterally neighboring the first conductive structure, the second conductive structure exhibiting a concentration of ?-phase tungsten varying with a vertical distance from a vertically neighboring insulative level. The microelectronic device further comprises slot structures vertically extending through the stack structure and dividing the stack structure into block structures, and strings of memory cells vertically extending through the stack structure, the first conductive structures between laterally neighboring strings of memory cells, the second conductive structures between the slot structures and strings of memory cells nearest the slot structures. Related memory devices, electronic systems, and methods are also described.

Abstract: Some embodiments include apparatuses and methods of forming the apparatuses. One of the apparatuses includes a device including tiers of materials located one over another, the tiers of materials including respective memory cells and control gates for the memory cells. The control gates include respective portions that collectively form part of a staircase structure. The staircase structure includes first regions and second regions coupled to the first regions. The second regions include respective sidewalls in which a portion of each of the first regions and a portion of each of the second regions are part of a respective control gate of the control gates. The device also includes conductive pads electrically separated from each other and located on the first regions of the staircase structure, and conductive contacts contacting the conductive pads.

Abstract: The present disclosure is directed to controlling charge transfer in 2D materials. A charge-transfer controlled 2D device comprises a 2D active conducting material, a 2D charge transfer source material, and at least one overlapping portion wherein the 2D active conducting material overlaps the 2D charge transfer source material including at least one edge of the 2D charge transfer source material.

Abstract: A polarization-independent orbital angular momentum modulator based on a chiral fiber grating, a method for manufacturing the same, and an orbital angular momentum beam generator. The orbital angular momentum modulator includes an optical fiber body having a spiral fiber structure, and the spiral fiber structure has a long-period optical fiber grating effect. The optical fiber body has a periodic spiral refractive index modulation in an axial direction. A period of the spiral refractive index modulation has a magnitude of hundreds of microns, and the spiral refractive index modulation is distributed in an axial direction, a radial direction, and an angular direction of the optical fiber body, and configured to excite a spiral phase to generate an orbital angular momentum beam.

Abstract: A microelectronic device comprises a stack structure comprising insulative levels vertically interleaved with conductive levels. The conductive levels individually comprise a first conductive structure, and a second conductive structure laterally neighboring the first conductive structure, the second conductive structure exhibiting a concentration of ?-phase tungsten varying with a vertical distance from a vertically neighboring insulative level. The microelectronic device further comprises slot structures vertically extending through the stack structure and dividing the stack structure into block structures, and strings of memory cells vertically extending through the stack structure, the first conductive structures between laterally neighboring strings of memory cells, the second conductive structures between the slot structures and strings of memory cells nearest the slot structures. Related memory devices, electronic systems, and methods are also described.

Abstract: A method used in forming a conductive via of integrated circuitry comprises forming a lining laterally over sidewalls of an elevationally-elongated opening. The lining comprises elemental-form silicon. The elemental-form silicon of an uppermost portion of the lining is ion implanted in the elevationally-elongated opening. The ion-implanted elemental-form silicon of the uppermost portion of the lining is etched selectively relative to the elemental-form silicon of a lower portion of the lining below the uppermost portion that was not subjected to said ion implanting. The elemental-form silicon of the lower portion of the lining is reacted with a metal halide to form elemental-form metal in a lower portion of the elevationally-elongated opening that is the metal from the metal halide. Conductive material in the elevationally-elongated opening is formed atop and directly against the elemental-form metal. Other embodiments, including structure independent of method, are disclosed.

Abstract: An oral capsule and a method for filling a capsule after directly mixing powders, the oral capsule comprising a composition for the oral capsule and a capsule shell, the composition for the oral capsule comprising zanubrutinib, a filler, a disintegrant, a wetting agent, a glidant, a lubricant, and optionally a binder. The composition for the capsule is capable of obtaining satisfactory product stability, dissolution properties that meet bioavailability standards, a preparation process consistent with production equipment, and reasonable production costs. In addition, the method is a non-granulating process, which may simplify the overall process steps and reduce the impact of the preparation process on product bioavailability.

Abstract: The present invention relates to a PARP inhibitor pellet composition and a preparation process therefor. The pellet composition comprises a pellet and an optional additional excipient, with the pellet comprising (1) a pellet core; (2) a drug-containing layer and (3) an optional protective layer, wherein the drug-containing layer contains (a) an active ingredient and (b) a binder; when the composition comprises the protective layer, the protective layer contains (c) a coating material; and the active ingredient is (R)-2-fluoro-10a-methyl-7,8,9,10,10a,11-hexahydro-5,6,7a,11-tetraazacyclohepta[def]cyclopenta[a]fluoren-4(5H)-one, a pharmaceutically acceptable salt thereof and a hydrate thereof.

Abstract: A method used in forming a conductive via of integrated circuitry comprises forming a lining laterally over sidewalk of an elevationally-elongated opening. The lining comprises elemental-form silicon. The elemental-form silicon of an uppermost portion of the lining is ion implanted in the elevationally-elongated opening. The ion-implanted elemental-form silicon of the uppermost portion of the lining is etched selectively relative to the elemental-form silicon of a lower portion of the lining below the uppermost portion that was not subjected to said ion implanting. The elemental-form silicon of the lower portion of the lining is reacted with a metal halide to form elemental-form metal in a lower portion of the elevationally-elongated opening that is the metal from the metal halide. Conductive material in the elevationally-elongated opening is formed atop and directly against the elemental-form metal. Other embodiments, including structure independent of method, are disclosed.

Abstract: The present invention discloses a combination of vaccine strains for treating, preventing, relieving or controlling Canine Distemper, Canine Parvovirus Enteritis and Canine Infectious Hepatitis, comprising: Canine Distemper virus vaccine strain with the microorganism deposition accession number CGMCC No. 19397, Canine Parvovirus vaccine strain with the microorganism deposition accession number CGMCC No. 19398 and Canine Infectious Hepatitis virus vaccine strain with the microorganism deposition accession number CGMCC No. 19396. The three vaccine strains of the combination of vaccine strains are low in toxicity and good in immunogenicity. The present invention further discloses a live vaccine composition using the above-mentioned combination of vaccine strains as immunogen. The vaccine composition is safe and effective.