Abstract: A plasma processing apparatus includes a cooling plate having a fixing surface to which an upper electrode is fixed, the cooling plate having, on the fixing surface, an electrostatic chuck configured to attract the upper electrode by an attraction force generated by an applied voltage; a power supply configured to apply the voltage to the electrostatic chuck; and a power supply controller configured to control the power supply such that an absolute value of the voltage applied to the electrostatic chuck is increased based on a degree of consumption of the upper electrode.

Abstract: A plasma processing apparatus includes a cooling plate having a fixing surface to which an upper electrode is fixed, the cooling plate having, on the fixing surface, an electrostatic chuck configured to attract the upper electrode by an attraction force generated by an applied voltage; a power supply configured to apply the voltage to the electrostatic chuck; and a power supply controller configured to control the power supply such that an absolute value of the voltage applied to the electrostatic chuck is increased based on a degree of consumption of the upper electrode.

Abstract: This wire clamp apparatus calibration method comprises: a step for driving a driving piezoelectric element by applying a predetermined frequency that causes a pair of arm portions to vibrate in an opening/closing direction; a step for detecting whether or not end portions of the pair of arm portions collide with each other on the basis of an output current outputted from the driving piezoelectric element when the pair of arm portions are vibrating in the opening/closing direction; a step for calculating, on the basis of the detection result, reference voltages in a state where the pair of arm portions are closed; and a step for performing calibration of a drive voltage to be applied to the driving piezoelectric element on the basis of the reference voltages. Accordingly, accuracy improvement and stabilization in an opening/closing operation of the wire clamp apparatus can be achieved.

Abstract: A power feed structure includes a first connecting member group and a ring-shaped first terminal member. The first connecting member group includes a plurality of first connecting members arranged along a circumferential direction of a focus ring disposed in a processing chamber of a plasma processing apparatus to apply a bias potential to the focus ring. The ring-shaped first terminal member is electrically connected to the first connecting members.

Abstract: The rinsing composition for a silicon wafer of the present invention contains: a water-soluble polymer A containing a constitutional unit A having a betaine structure; and an aqueous medium. The water-soluble polymer A preferably contains a constitutional unit expressed by Formula (1) below. The water-soluble polymer preferably further contains a constitutional unit B expressed by Formula (2) below. The weight average molecular weight of the water-soluble polymer A is preferably 1,000 or more and preferably 3,000,000 or less. The rinsing composition for a silicon wafer of the present invention contains a pH regulator as needed.

Abstract: A plasma processing apparatus includes a chamber; a wall member; an insulating member; and a ground member. The wall member is partially placed in an internal space of the chamber and exposed to a space at an outside of the chamber. The insulating member is provided on the wall member. The ground member is made of silicon, provided in the internal space and mounted on the insulating member. The wall member is configured to support the ground member in a non-contact state with the insulating member therebetween. The ground member is in contact with a spherical surface of the insulating member and mounted on the spherical surface.

Abstract: A polishing liquid composition for a silicon oxide film according to the present invention includes cerium oxide particles, a water-soluble macromolecular compound, and an aqueous medium, and the water-soluble macromolecular compound is a water-soluble macromolecular compound including a betaine structure, excluding carbobetaine homopolymers and sulfobetaine homopolymers. The water-soluble macromolecular compound is preferably a water-soluble macromolecular compound containing a constitutional unit A including a betaine structure, and a constitutional unit B that is a constitutional unit other than the constitutional unit A and contains at least one group of a primary amino group, a secondary amino group, a tertiary amino group, a quaternary ammonium group, and salts thereof.

Abstract: A plasma processing apparatus includes a processing vessel, a lower electrode, an annular member, an inner upper electrode, an outer upper electrode, a processing gas supply, a first high frequency power supply and a first DC power supply. The lower electrode is configured to place a processing target substrate. The annular member is disposed on an outer peripheral portion of the lower electrode. The inner upper electrode is disposed to face the lower electrode. The outer upper electrode is disposed at an outside of the inner upper electrode. The first high frequency power supply applies a first high frequency power. The first DC power supply applies a first variable DC voltage to the outer upper electrode. At least a part of a surface of the outer upper electrode exposed to the processing space is located higher than a surface of the inner upper electrode exposed to the processing space.

Abstract: A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.

Abstract: A power feed structure includes a first connecting member group and a ring-shaped first terminal member. The first connecting member group includes a plurality of first connecting members arranged along a circumferential direction of a focus ring disposed in a processing chamber of a plasma processing apparatus to apply a bias potential to the focus ring. The ring-shaped first terminal member is electrically connected to the first connecting members.

Abstract: A plasma processing apparatus includes a processing vessel, a lower electrode, an annular member, an inner upper electrode, an outer upper electrode, a processing gas supply, a first high frequency power supply and a first DC power supply. The lower electrode is configured to place a processing target substrate. The annular member is disposed on an outer peripheral portion of the lower electrode. The inner upper electrode is disposed to face the lower electrode. The outer upper electrode is disposed at an outside of the inner upper electrode. The first high frequency power supply applies a first high frequency power. The first DC power supply applies a first variable DC voltage to the outer upper electrode. At least a part of a surface of the outer upper electrode exposed to the processing space is located higher than a surface of the inner upper electrode exposed to the processing space.

Abstract: A substrate support for a plasma processing apparatus includes a first support area configured to support a substrate placed thereon; a second support area configured to support a focus ring placed thereon, and extending in a circumferential direction outward in a radial direction with respect to the first support area; a conductive structure configured to be connected to the focus ring; and a holder configured to hold the connection member to press the connection member downward, and also to cause the connection member to press the surface of the focus ring. The conductive structure includes a first conductive path which provides a terminal area outward in the radial direction with respect to the second support area, and a connection member configured to electrically connect the focus ring and the terminal area, and disposed on the terminal area to face a surface of the focus ring.

Abstract: A plasma processing apparatus includes a cooling plate having a fixing surface to which an upper electrode is fixed, the cooling plate having, on the fixing surface, an electrostatic chuck configured to attract the upper electrode by an attraction force generated by an applied voltage; a power supply configured to apply the voltage to the electrostatic chuck; and a power supply controller configured to control the power supply such that an absolute value of the voltage applied to the electrostatic chuck is increased based on a degree of consumption of the upper electrode.

Abstract: The rinsing composition for a silicon wafer of the present invention contains: a water-soluble polymer A containing a constitutional unit A having a betaine structure; and an aqueous medium. The water-soluble polymer A preferably contains a constitutional unit expressed by Formula (1) below. The water-soluble polymer preferably further contains a constitutional unit B expressed by Formula (2) below. The weight average molecular weight of the water-soluble polymer A is preferably 1,000 or more and preferably 3,000,000 or less. The rinsing composition for a silicon wafer of the present invention contains a pH regulator as needed.

Abstract: A plasma processing apparatus includes a processing chamber where a plasma processing is performed on a workpiece, a stage, an edge ring, a shield, and a driver. The stage has a placement surface on which the workpiece is placed inside the processing chamber. The edge ring is provided around the stage so as to surround the workpiece on the placement surface. The shield is capable of shielding a portion of the surface of the edge ring from plasma generated in the processing chamber. The driver changes the area of the edge ring exposed to the plasma by moving the shield relative to the edge ring.

Abstract: This wire clamp apparatus calibration method comprises: a step for driving a driving piezoelectric element by applying a predetermined frequency that causes a pair of arm portions to vibrate in an opening/closing direction; a step for detecting whether or not end portions of the pair of arm portions collide with each other on the basis of an output current outputted from the driving piezoelectric element when the pair of arm portions are vibrating in the opening/closing direction; a step for calculating, on the basis of the detection result, reference voltages in a state where the pair of arm portions are closed; and a step for performing calibration of a drive voltage to be applied to the driving piezoelectric element on the basis of the reference voltages. Accordingly, accuracy improvement and stabilization in an opening/closing operation of the wire clamp apparatus can be achieved.

Abstract: A placement apparatus for placing a workpiece is provided. The placement apparatus includes a stage on which a workpiece can be placed in a processing vessel; an edge ring including a locking part which is disposed on the stage so as to surround a periphery of the workpiece; a conductive connecting member connected with the edge ring at the locking part; and a first contacting member configured to cause the edge ring to contact the stage, while the edge ring is connected with the connecting member.

Abstract: The rinsing composition for a silicon wafer of the present invention is a rinsing composition for a silicon wafer containing a water-soluble polymer and water. The water-soluble polymer exhibits a difference (Z?Z0) between a zeta-potential Z of a water-soluble polymer-containing silica aqueous dispersion (aqueous dispersion S) and a zeta-potential Z0 of a silica aqueous dispersion (aqueous dispersion S0) of 25 mV or less. The aqueous dispersion S consists of the water-soluble polymer, silica particles, water, and as needed, hydrochloric acid or ammonia, and has a concentration of the water-soluble polymer of 0.1 mass %, a concentration of the silica particles of 0.1 mass %, and a pH of 7.0 at 25° C. The aqueous dispersion S0 consists of silica particles, water, and as needed, hydrochloric acid or ammonia, and has a concentration of the silica particles of 0.1 mass %, and a pH of 7.0 at 25° C.

Abstract: A gas supply device of supplying a gas into a processing space from a gas supply source includes a facing plate that faces the processing space and includes multiple through holes; multiple gas distribution plates; and a cover plate. The facing plate, the gas distribution plates, and the cover plate are stacked in sequence. In a surface, which faces the facing plate, of the gas distribution plate closest to the facing plate, multiple gas diffusion spaces including a first gas diffusion space and a second gas diffusion space are formed, and in each of the gas distribution plates, a first gas supply path through which a processing gas or an additional gas is supplied into the first gas diffusion space and a second gas supply path through which the processing gas or the additional gas is supplied into the second gas diffusion space are formed.

Abstract: A gas supply device of supplying a gas into a processing space from a gas supply source includes a facing plate that faces the processing space and includes multiple through holes; multiple gas distribution plates; and a cover plate. The facing plate, the gas distribution plates, and the cover plate are stacked in sequence. In a surface, which faces the facing plate, of the gas distribution plate closest to the facing plate, multiple gas diffusion spaces including a first gas diffusion space and a second gas diffusion space are formed, and in each of the gas distribution plates, a first gas supply path through which a processing gas or an additional gas is supplied into the first gas diffusion space and a second gas supply path through which the processing gas or the additional gas is supplied into the second gas diffusion space are formed.