Abstract: An electrostatic chuck according to an exemplary embodiment includes a first region and a second region. The first region has a first upper surface. The first region is configured to hold a substrate disposed on the first upper surface. The second region has a second upper surface. The second region extends in a circumferential direction to surround the first region. The second region is configured to support a focus ring mounted on the second upper surface. The first upper surface and the second upper surface extend along a single flat surface. The first region and the second region provide a space therebetween to separate the first upper surface and the second upper surface from each other.

Abstract: A copper alloy powder is a copper alloy powder for additive manufacturing. The copper alloy powder contains more than 1.00 mass % and not more than 2.80 mass % of chromium, and a balance of copper. A method for producing an additively-manufactured article includes a first step of preparing a copper alloy powder containing more than 1.00 mass % and not more than 2.80 mass % of chromium and a balance of copper and a second step of producing the additively-manufactured article from the copper alloy powder, and the additively-manufactured article is produced such that forming a powder layer including the copper alloy powder, and solidifying the copper alloy powder at a predetermined position in the powder layer to form a shaped layer are sequentially repeated to stack such shaped layers to thus produce the additively-manufactured article.

Abstract: An electrostatic chuck according to an exemplary embodiment includes a first region and a second region. The first region has a first upper surface. The first region is configured to hold a substrate disposed on the first upper surface. The second region has a second upper surface. The second region extends in a circumferential direction to surround the first region. The second region is configured to support a focus ring mounted on the second upper surface. The first upper surface and the second upper surface extend along a single flat surface. The first region and the second region provide a space therebetween to separate the first upper surface and the second upper surface from each other.

Abstract: A plasma processing apparatus includes a chamber; a wall member; an insulating member; and a ground member. The wall member is partially placed in an internal space of the chamber and exposed to a space at an outside of the chamber. The insulating member is provided on the wall member. The ground member is made of silicon, provided in the internal space and mounted on the insulating member. The wall member is configured to support the ground member in a non-contact state with the insulating member therebetween. The ground member is in contact with a spherical surface of the insulating member and mounted on the spherical surface.

Abstract: A placement apparatus for placing a workpiece is provided. The placement apparatus includes a stage on which a workpiece can be placed in a processing vessel; an edge ring including a locking part which is disposed on the stage so as to surround a periphery of the workpiece; a conductive connecting member connected with the edge ring at the locking part; and a first contacting member configured to cause the edge ring to contact the stage, while the edge ring is connected with the connecting member.

Abstract: A plasma processing apparatus includes a cooling plate having a fixing surface to which an upper electrode is fixed, the cooling plate having, on the fixing surface, an electrostatic chuck configured to attract the upper electrode by an attraction force generated by an applied voltage; a power supply configured to apply the voltage to the electrostatic chuck; and a power supply controller configured to control the power supply such that an absolute value of the voltage applied to the electrostatic chuck is increased based on a degree of consumption of the upper electrode.

Abstract: A polishing liquid composition for a silicon oxide film according to the present invention includes cerium oxide particles, a water-soluble macromolecular compound, and an aqueous medium, and the water-soluble macromolecular compound is a water-soluble macromolecular compound including a betaine structure, excluding carbobetaine homopolymers and sulfobetaine homopolymers. The water-soluble macromolecular compound is preferably a water-soluble macromolecular compound containing a constitutional unit A including a betaine structure, and a constitutional unit B that is a constitutional unit other than the constitutional unit A and contains at least one group of a primary amino group, a secondary amino group, a tertiary amino group, a quaternary ammonium group, and salts thereof.

Abstract: A capillary guide device (40) includes: a guide body portion (41) capable of being in contact with a capillary (8) held in a hole (7h); and a drive portion (42) which arranges the guide body portion (41) at a position capable of being in contact with the capillary (8) by moving the guide body portion (41) along an X-axis direction. The drive portion (42) includes: a table (46) connected to the guide body portion (41); a drive shaft (47b) extending in the X-axis direction and exhibiting a frictional resistance force with the table (46); and an ultrasonic element (47a) fixed to an end of the drive shaft (47b) and supplying an ultrasonic wave to the drive shaft (47b).

Abstract: A substrate support for a plasma processing apparatus includes a first support area configured to support a substrate placed thereon; a second support area configured to support a focus ring placed thereon, and extending in a circumferential direction outward in a radial direction with respect to the first support area; a conductive structure configured to be connected to the focus ring; and a holder configured to hold the connection member to press the connection member downward, and also to cause the connection member to press the surface of the focus ring. The conductive structure includes a first conductive path which provides a terminal area outward in the radial direction with respect to the second support area, and a connection member configured to electrically connect the focus ring and the terminal area, and disposed on the terminal area to face a surface of the focus ring.

Abstract: A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.

Abstract: A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.

Abstract: A plasma processing apparatus includes a processing chamber where a plasma processing is performed on a workpiece, a stage, an edge ring, a shield, and a driver. The stage has a placement surface on which the workpiece is placed inside the processing chamber. The edge ring is provided around the stage so as to surround the workpiece on the placement surface. The shield is capable of shielding a portion of the surface of the edge ring from plasma generated in the processing chamber. The driver changes the area of the edge ring exposed to the plasma by moving the shield relative to the edge ring.

Abstract: A placement apparatus for placing a workpiece is provided. The placement apparatus includes a stage on which a workpiece can be placed in a processing vessel; an edge ring including a locking part which is disposed on the stage so as to surround a periphery of the workpiece; a conductive connecting member connected with the edge ring at the locking part; and a first contacting member configured to cause the edge ring to contact the stage, while the edge ring is connected with the connecting member.

Abstract: A placement apparatus for placing a workpiece is provided. The placement apparatus includes a stage on which a workpiece can be placed in a processing vessel; an edge ring including a locking part which is disposed on the stage so as to surround a periphery of the workpiece; a conductive connecting member connected with the edge ring at the locking part; and a first contacting member configured to cause the edge ring to contact the stage, while the edge ring is connected with the connecting member.

Abstract: A capillary guide device 40 includes: a guide body portion 41 capable of being in contact with a capillary 8 held in a hole 7h; and a drive portion 42 which arranges the guide body portion 41 at a position capable of being in contact with the capillary 8 by moving the guide body portion 41 along an X-axis direction. The drive portion 42 includes: a table 46 connected to the guide body portion 41; a drive shaft 47b extending in the X-axis direction and exhibiting a frictional resistance force with the table 46; and an ultrasonic element 47a fixed to an end of the drive shaft 47b and supplying an ultrasonic wave to the drive shaft 47b.

Abstract: An electrostatic chuck according to an exemplary embodiment includes a first region and a second region. The first region has a first upper surface. The first region is configured to hold a substrate disposed on the first upper surface. The second region has a second upper surface. The second region extends in a circumferential direction to surround the first region. The second region is configured to support a focus ring mounted on the second upper surface. The first upper surface and the second upper surface extend along a single flat surface. The first region and the second region provide a space therebetween to separate the first upper surface and the second upper surface from each other.

Abstract: A mounting base for placing a substrate to be subjected to a predetermined processing is provided. The mounting base includes an electrostatic chuck for electrostatically attracting and holding the substrate, a first edge ring that is disposed around the substrate and is transferrable, a second edge ring fixed around the first edge ring, a lifter pin for raising and lowering the first edge ring, a first electrode disposed in a position facing the first edge ring in the electrostatic chuck to electrostatically attract and hold the first edge ring; and a second electrode disposed in a position facing the second edge ring in the electrostatic chuck to electrostatically attract and hold the second edge ring.

Abstract: A plasma processing apparatus includes a cooling plate having a fixing surface to which an upper electrode is fixed, the cooling plate having, on the fixing surface, an electrostatic chuck configured to attract the upper electrode by an attraction force generated by an applied voltage; a power supply configured to apply the voltage to the electrostatic chuck; and a power supply controller configured to control the power supply such that an absolute value of the voltage applied to the electrostatic chuck is increased based on a degree of consumption of the upper electrode.