Abstract: A gas supply device of supplying a gas into a processing space from a gas supply source includes a facing plate that faces the processing space and includes multiple through holes; multiple gas distribution plates; and a cover plate. The facing plate, the gas distribution plates, and the cover plate are stacked in sequence. In a surface, which faces the facing plate, of the gas distribution plate closest to the facing plate, multiple gas diffusion spaces including a first gas diffusion space and a second gas diffusion space are formed, and in each of the gas distribution plates, a first gas supply path through which a processing gas or an additional gas is supplied into the first gas diffusion space and a second gas supply path through which the processing gas or the additional gas is supplied into the second gas diffusion space are formed.

Abstract: A focus ring that surrounds a periphery of a substrate placed on a stage in a processing chamber of a substrate processing apparatus includes a lower surface to contact a peripheral portion of the stage, the lower surface being inclined such that an outer peripheral side becomes lower than an inner peripheral side in a radial direction.

Abstract: A shower head 13 (gas supply device) of supplying a processing gas and an additional gas from a processing gas supply source and an additional gas source, respectively, into a processing space S includes multiple gas distribution plates 28 to 31, the cooling plate 32, and the cover plate 33 stacked in sequence. A peripheral gas diffusion space 35 and an outermost gas diffusion space 36 are formed in the undermost gas distribution plate 28. At least one gas supply path for supplying the processing gas and additional gas into any one of the peripheral gas diffusion space and the outermost gas diffusion space is formed at each of the gas distribution plates. The gas supply path is branched into multiple lines and distances from the processing gas supply source to front ends of the respective branch lines are set to be all the same.

Abstract: A mounting table structure includes a sheet, having thermal conductivity, provided between a focus ring and a base member; a pressing member having a pressing surface that presses the focus ring toward the base member and contact surfaces, facing downward, arranged at a predetermined interval in a circumferential direction thereof; and a supporting member that is connected to the base member and has first and second contact surfaces. Further, the first contact surfaces and the second contact surfaces are arranged at the predetermined interval in the circumferential direction such that the second and first contact surfaces are alternately arranged. Moreover, the first contact surfaces are located at a position different from that of the second contact surfaces in a height direction, and the contact surfaces of the pressing member are protruded at a distance larger than distances of the first and second contact surfaces in the height direction.

Abstract: To provide a fluid control apparatus capable of reducing the space, while reducing the cost. A fluid control apparatus has a fluid controlling unit and a fluid introducing unit. The fluid introducing unit is divided into three parts: a first and a second inlet-side shutoff/open parts disposed on the inlet side, each made up of 2×N/2, disposed between the first and second inlet-side shutoff/open parts and the fluid controlling unit.

Abstract: A thin film manufacturing method and a thin film manufacturing apparatus are provided to manufacture a thin film with good reproducibility. A dummy substrate is conveyed into a chamber, and a dummy processing gas is supplied to the dummy substrate. Moreover, a product substrate is conveyed into the chamber, and a raw material gas different from the dummy processing gas is supplied to the product substrate. The raw material gas contains metal material for manufacturing a thin film with a metal organic chemical vapor deposition (MOCVD) method. Since the raw material gas is not used as a dummy processing gas, the amount of metal material to be used can be minimized in manufacturing the thin film with good reproducibility.

Abstract: A shower head 13 (gas supply device) of supplying a processing gas and an additional gas from a processing gas supply source and an additional gas source, respectively, into a processing space S includes multiple gas distribution plates 28 to 31, the cooling plate 32, and the cover plate 33 stacked in sequence. A peripheral gas diffusion space 35 and an outermost gas diffusion space 36 are formed in the undermost gas distribution plate 28. At least one gas supply path for supplying the processing gas and additional gas into any one of the peripheral gas diffusion space and the outermost gas diffusion space is formed at each of the gas distribution plates. The gas supply path is branched into multiple lines and distances from the processing gas supply source to front ends of the respective branch lines are set to be all the same.

Abstract: A flash removing punch pin is provided with a rotating mechanism wherein a flange is formed on an upper end portion on an outer circumference side portion of a cutting edge portion, and a plurality of grooves are formed in the axis center direction to the side of a casting part from the flange. An inner portion is slidably inserted into an inner cover, and the inner portion and a processing portion are moved by a spring cylinder in a direction to be separated from each other. The spring cylinder is compressed when the punch pin is in proximity to the casting part, and then the flange of the punch pin contacts a flange portion of the casting part. When the inner portion slides into the inner cover, the processing portion rotates along the axis with the inner portion.

Abstract: A manufacturing method of a device including: a first process in which a barrier film is formed on a substrate with a concave portion provided on one surface thereof so as to cover an inner wall surface of the concave portion; a second process in which a conductive film is formed so as to cover the barrier film; and a third process in which the conductive film is melted by a reflow method, wherein the method includes a process ? between the second process and the third process, in which the substrate with the barrier film and the conductive film laminated thereon in this order is exposed to an atmosphere under a pressure A for a time period B, and wherein in the process ?, control is carried out such that a product of the pressure A and the time period B is not greater than 6×10?4 [Pa·s].

Abstract: A gas mixture supplying method includes supplying plural kinds of gases through gas supply lines connected to a common pipeline and supplying a gas mixture of the plural kinds of gases from a gas outlet of the common pipeline to a region where the gas mixture is used through a gas mixture supply line. When two or more gases having different flow rates are supplied simultaneously, a gas having a relatively low flow rate is supplied from one of the gas supply lines provided at a position closer to the gas outlet than that for a gas having a relatively high flow rate.

Abstract: A mounting table structure includes a sheet, having thermal conductivity, provided between a focus ring and a base member; a pressing member having a pressing surface that presses the focus ring toward the base member and contact surfaces, facing downward, arranged at a predetermined interval in a circumferential direction thereof; and a supporting member that is connected to the base member and has first and second contact surfaces. Further, the first contact surfaces and the second contact surfaces are arranged at the predetermined interval in the circumferential direction such that the second and first contact surfaces are alternately arranged. Moreover, the first contact surfaces are located at a position different from that of the second contact surfaces in a height direction, and the contact surfaces of the pressing member are protruded at a distance larger than distances of the first and second contact surfaces in the height direction.

Abstract: In order to provide a thin film manufacturing method and a thin film manufacturing apparatus, wherein a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved, a dummy substrate (S2) is conveyed into a chamber (51), dummy processing gas is supplied to the dummy substrate (S2), a product substrate (S3) is conveyed into the chamber (51), and raw material gas different from the dummy processing gas, and containing therein metal material for manufacturing a thin film with the Metal Organic Chemical Vapor Deposition (MOCVD) method, is supplied to the product substrate (S3). Since the raw material gas is not used as dummy processing gas, the amount of metal material to be used can be inhibited, and a thin film with good reproducibility can be manufactured at low cost, and in a way wherein resources are saved.

Abstract: [Problem] To provide a thin film production process and a thin film production device, both of which enable the production of a dielectric thin film having small surface roughness. [Solution] This thin film production process comprises: supplying a mixed gas to a substrate (S) that is placed in a chamber (51) and has been heated, wherein the mixed gas comprises a metal raw material gas that serves as a raw material for a dielectric thin film having perovskite-type crystals and an oxidation gas that can react with the metal raw material gas; stopping the supply of the metal raw material gas to the substrate (S); and, subsequent to the stopping of the supply of the metal raw material gas, limiting the supply of the oxidation gas to the substrate (S).

Abstract: A gas mixture supplying method includes supplying plural kinds of gases through gas supply lines connected to a common pipeline and supplying a gas mixture of the plural kinds of gases from a gas outlet of the common pipeline into a region where the gas mixture is used through a gas mixture supply line. When a typical gas supplied in a gaseous state from a gas supply unit and a liquid source gas vaporized by heating a liquid source material supplied from a liquid source material supply unit by a vaporizing unit are supplied simultaneously, the liquid source gas is supplied from one of the gas supply lines provided at a position closer to the gas outlet than that for the typical gas, and the liquid source gas is supplied to a downstream side of a filter for removing particles in the typical gas.

Abstract: To provide a fluid control apparatus capable of reducing the space, while reducing the cost. A fluid control apparatus 1 has a fluid controlling unit 2 and a fluid introducing unit 3. The fluid introducing unit 3 is divided into three parts: a first and a second inlet-side shutoff/open parts 5, 6 disposed on the inlet side, each made up of 2×N/2 on-off valves 23, and a fluid controlling unit-side shutoff/open part 7 made up of 4×M on-off valves 23, disposed between the first and second inlet-side shutoff/open parts 5, 6 and the fluid controlling unit 2.

Abstract: A flash removing punch pin is provided with a rotating mechanism wherein a flange is formed on an upper end portion on an outer circumference side portion of a cutting edge portion, and a plurality of grooves are formed in the axis center direction to the side of a casting part from the flange. An inner portion is slidably inserted into an inner cover, and the inner portion and a processing portion are moved by a spring cylinder in a direction to be separated from each other. The spring cylinder is compressed when the punch pin is in proximity to the casting part, and then the flange of the punch pin contacts a flange portion of the casting part. When the inner portion slides into the inner cover, the processing portion rotates along the axis with the inner portion.

Abstract: A gas mixture supplying method includes supplying plural kinds of gases through gas supply lines connected to a common pipeline and supplying a gas mixture of the plural kinds of gases from a gas outlet of the common pipeline into a region where the gas mixture is used through a gas mixture supply line. When a typical gas supplied in a gaseous state from a gas supply unit and a liquid source gas vaporized by heating a liquid source material supplied from a liquid source material supply unit by a vaporizing unit are supplied simultaneously, the liquid source gas is supplied from one of the gas supply lines provided at a position closer to the gas outlet than that for the typical gas, and the liquid source gas is supplied to a downstream side of a filter for removing particles in the typical gas.

Abstract: A gas mixture supplying method includes supplying plural kinds of gases through gas supply lines connected to a common pipeline and supplying a gas mixture of the plural kinds of gases from a gas outlet of the common pipeline to a region where the gas mixture is used through a gas mixture supply line. When two or more gases having different flow rates are supplied simultaneously, a gas having a relatively low flow rate is supplied from one of the gas supply lines provided at a position closer to the gas outlet than that for a gas having a relatively high flow rate.

Abstract: The present invention provides an optical fiber of which a zero dispersion wavelength falls within a range of between 1,250 nm and 1,350 nm inclusive, transmission loss at 1,550 nm is equal to or less than 0.185 dB/km, chromatic dispersion at 1,550 nm is within the range of 19±1 ps/nm·km, a dispersion slope at 1,550 nm is equal to or less than 0.06 ps/nm2·km, an effective area Aeff is equal to or more than 105 ?m2, a cable cutoff wavelength ?cc is equal to or less than 1,530 nm, polarization mode dispersion is equal to or less than 0.1 ps/km1/2, and a loss when the optical fiber is wound on a mandrel having an outer diameter of 20 mm is equal to or less than 10 dB/m.

Abstract: The present invention provides an optical fiber of which a zero dispersion wavelength falls within a range of between 1,250 nm and 1,350 nm inclusive, transmission loss at 1,550 nm is equal to or less than 0.185 dB/km, chromatic dispersion at 1,550 nm is within the range of 19±1 ps/nm·km, a dispersion slope at 1,550 nm is equal to or less than 0.06 ps/nm2·km, an effective area Aeff is equal to or more than 105 ?m2, a cable cutoff wavelength ?cc is equal to or less than 1,530 nm, polarization mode dispersion is equal to or less than 0.1 ps/km1/2, and a loss when the optical fiber is wound on a mandrel having an outer diameter of 20 mm is equal to or less than 10 dB/m.