Patents by Inventor Yohei Yamaguchi

Yohei Yamaguchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230027596
    Abstract: A wiring structure includes a structure body including a pattern, a first conductive layer above the structure body, the first conductive layer having a shape, the shape crossing an edge of a pattern of the structure body and reflecting a step of the edge of the pattern of the structure body, a first insulating layer above the first conductive layer, the first insulating layer having a first opening overlapping the edge of the pattern of the structure body in a plane view, and r is arranged with a second opening in a region overlapping the semiconductor layer in a plane view, a second conductive layer in the first opening, the second conductive layer being connected to the first conductive layer.
    Type: Application
    Filed: October 3, 2022
    Publication date: January 26, 2023
    Inventor: Yohei YAMAGUCHI
  • Publication number: 20230020074
    Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.
    Type: Application
    Filed: September 15, 2022
    Publication date: January 19, 2023
    Applicant: Japan Display Inc.
    Inventors: Yohei YAMAGUCHI, Arichika ISHIDA, Hidekazu MIYAKE, Hiroto MIYAKE, Isao SUZUMURA
  • Publication number: 20230017133
    Abstract: RC-network components that include a substrate having a capacitor with a thin-film top electrode portion at a surface at one side of the substrate. The low ohmic semiconductor substrate is doped to contribute 5% or less to the resistance of the RC-network component. The resistance in series with the capacitor is controlled by providing a contact plate, spaced from the top electrode portion by an insulating layer, and a set of one or more bridging contacts in openings in the insulating layer. The bridging contacts electrically interconnect the top electrode portion and contact plate. Different resistance values can be set by appropriate selection of the number of bridging contacts. Temperature concentration at the periphery of the openings is reduced by providing reduced thickness portions in the insulating layer around the periphery of the openings.
    Type: Application
    Filed: September 26, 2022
    Publication date: January 19, 2023
    Inventors: Yohei YAMAGUCHI, Yasuhiro MURASE, St├ęphane BOUVIER
  • Publication number: 20230010467
    Abstract: RC-network components that include a substrate and capacitor having a thin-film top electrode portion at a surface on one side of the substrate. The low ohmic semiconductor substrate is doped to contribute 5% or less to the resistance of the RC-network component. The resistance provided in series with the capacitor is controlled by providing a contact plate, spaced from the thin-film top electrode portion by an insulating layer, and a set of one or more bridging contacts passing through openings in the insulating layer. The bridging contacts electrically interconnect the thin-film top electrode portion and the contact plate. Different resistance values can be set by appropriate selection of the number of bridging contacts. The openings are elongated thereby reducing temperature concentration at their periphery. Correspondingly, the bridging contacts have an elongated cross-sectional shape.
    Type: Application
    Filed: September 15, 2022
    Publication date: January 12, 2023
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Yohei YAMAGUCHI, Yasuhiro MURASE, St├ęphane BOUVIER
  • Publication number: 20220389269
    Abstract: Provided is a hard coating film for foldable displays that does not form creases or cracks in the folding portion, and that is also excellent in reducing iridescent colors (interference mottling) caused by fine cracks in an easy-to-adhere resin layer or other layers. The hard coating film for foldable displays contains a polyester film having a thickness of 10 to 80 ?m, an easy-to-adhere resin layer, and a hard coating layer, the easy-to-adhere resin layer and the hard coating layer being stacked in this order on at least one surface of the polyester film, wherein the easy-to-adhere resin layer is a cured product of a composition containing at least one compound selected from the group consisting of titanium compounds and zirconium compounds and a polyester resin, and the polyester film having the easy-to-adhere resin layer stacked thereon but not yet having the hard coating layer stacked thereon satisfies characteristics within specific ranges.
    Type: Application
    Filed: June 30, 2020
    Publication date: December 8, 2022
    Applicant: TOYOBO CO., LTD.
    Inventors: Yohei YAMAGUCHI, Kokichi TOKUO, Shotaro NISHIO, Kiwamu KAWAI
  • Patent number: 11521990
    Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.
    Type: Grant
    Filed: June 2, 2021
    Date of Patent: December 6, 2022
    Assignee: Japan Display Inc.
    Inventors: Isao Suzumura, Kazufumi Watabe, Yoshinori Ishii, Hidekazu Miyake, Yohei Yamaguchi
  • Publication number: 20220376009
    Abstract: A semiconductor device includes an insulating substrate, a first semiconductor region configured of polysilicon formed on the insulating substrate, an insulating film laminated on the first semiconductor region, a contact hole formed in the insulating film and reaching the first semiconductor region, a second semiconductor region configured of an oxide semiconductor formed on the insulating film, a contact electrode configured of a conductive material and electrically connected to the first semiconductor region, where the conductive material is embedded in the contact hole. The insulating film contains a metallic element at an interface with the contact hole, where the metallic element forms the oxide semiconductor.
    Type: Application
    Filed: August 3, 2022
    Publication date: November 24, 2022
    Inventor: Yohei YAMAGUCHI
  • Publication number: 20220375967
    Abstract: The purpose of the present invention is to improve reliability of the TFT of the oxide semiconductor. The feature of the invention is: A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed under the first oxide semiconductor, a first gate electrode is formed under the first gate insulating film, an interlayer insulating film is formed on the first oxide semiconductor; a drain wiring, which connects with the first oxide semiconductor, and a source wiring, which connects with the first oxide semiconductor, are formed on the interlayer insulating film; the drain wiring or the source wiring is a laminated structure of a second oxide semiconductor and a first metal, the second oxide semiconductor is under the first metal.
    Type: Application
    Filed: June 3, 2022
    Publication date: November 24, 2022
    Applicant: Japan Display Inc.
    Inventor: Yohei YAMAGUCHI
  • Patent number: 11488984
    Abstract: A wiring structure includes a structure body including a pattern, a first conductive layer above the structure body, the first conductive layer having a shape, the shape crossing an edge of a pattern of the structure body and reflecting a step of the edge of the pattern of the structure body, a first insulating layer above the first conductive layer, the first insulating layer having a first opening overlapping the edge of the pattern of the structure body in a plane view, and r is arranged with a second opening in a region overlapping the semiconductor layer in a plane view, a second conductive layer in the first opening, the second conductive layer being connected to the first conductive layer.
    Type: Grant
    Filed: January 3, 2020
    Date of Patent: November 1, 2022
    Assignee: Japan Display Inc.
    Inventor: Yohei Yamaguchi
  • Patent number: 11481990
    Abstract: An information processing device is an information processing device including a processor. The processor obtains a detection result of a first detector for detecting a first target in first sensing data; and based on the detection result of the first detector, determines a setting of processing by a second detector for detecting a second target in second sensing data next in an order after the first sensing data, the second target being different from the first target.
    Type: Grant
    Filed: January 14, 2021
    Date of Patent: October 25, 2022
    Assignee: PANASONIC INTELLECTUAL PROPERTY CORPORATION OF AMERICA
    Inventors: Yasunori Ishii, Takuya Yamaguchi, Yohei Nakata, Ryota Fujimura, Sotaro Tsukizawa
  • Patent number: 11476247
    Abstract: A semiconductor rectifier includes a transistor and a diode. The transistor includes a source electrode, a drain electrode and a gate electrode. The diode includes an anode electrode and a cathode electrode. The anode electrode is electrically connected to the gate electrode, and the cathode electrode is electrically connected to the source electrode.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: October 18, 2022
    Assignee: ROHM CO., LTD.
    Inventors: Atsushi Yamaguchi, Junichi Kashiwagi, Yohei Moriyama
  • Patent number: 11474406
    Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.
    Type: Grant
    Filed: December 18, 2020
    Date of Patent: October 18, 2022
    Assignee: Japan Display Inc.
    Inventors: Yohei Yamaguchi, Arichika Ishida, Hidekazu Miyake, Hiroto Miyake, Isao Suzumura
  • Publication number: 20220275159
    Abstract: Provided is a hard coating film for foldable displays that does not form creases or cracks in the folding portion, and that is also excellent in reducing iridescent colors (interference mottling) caused by fine cracks in an easy-to-adhere resin layer or other layers.
    Type: Application
    Filed: June 30, 2020
    Publication date: September 1, 2022
    Applicant: TOYOBO CO., LTD.
    Inventors: Yohei YAMAGUCHI, Kokichi TOKUO, Shotaro NISHIO, Kiwamu KAWAI
  • Publication number: 20220262825
    Abstract: The purpose of the invention is to form a stable oxide semiconductor TFT in a display device. The concrete structure is: A display device having a TFT substrate that includes a TET having an oxide semiconductor layer comprising: the oxide semiconductor layer is formed on a first insulating film that is formed by a silicon oxide layer, the oxide semiconductor layer and an aluminum oxide film are directly formed on the first insulating film. The first insulating film becomes oxygen rich when the aluminum oxide film is formed on the first insulating film by sputtering. Oxygens in the first insulating film is effectively confined in the first insulating film, eventually, the oxygens diffuse to the oxide semiconductor for a stable operation of the oxide semiconductor TET.
    Type: Application
    Filed: May 9, 2022
    Publication date: August 18, 2022
    Applicant: Japan Display Inc.
    Inventor: Yohei YAMAGUCHI
  • Patent number: 11409228
    Abstract: A cam transmits and blocks light emitted from a light emitting portion. The cam moves to: a first position at which first and second cartridges are attachable to and detachable from a housing; a second position at which a first development roller contacts a first photosensitive drum, the second position being a position at which the cam has moved in a first direction from the first position; and a third position at which the first development roller is separated from the first photosensitive drum and a second development roller is separated from a second photosensitive drum, the third position being a position at which the cam has moved in the first direction from the second position. During an initial operation, based on a detection result of the sensor, a controller determines which of the first position, the second position, and the third position the cam is located at.
    Type: Grant
    Filed: June 2, 2021
    Date of Patent: August 9, 2022
    Assignee: BROTHER KOGYO KABUSHIKI KAISHA
    Inventors: Wataru Yamaguchi, Yohei Hashimoto
  • Publication number: 20220219221
    Abstract: A first tool retention member of a first tool exchange unit retains a first tool to be exchanged in a state of being engaged in an engagement hole of the first tool. A second tool retention member of a second tool exchange unit retains a second tool not to be exchanged in a state of being engaged in an engagement hole of the second tool. Subsequently, the first tool exchange unit moves in a left-right direction in a state in which a movement of the second tool exchange unit in the left-right direction is stopped.
    Type: Application
    Filed: May 8, 2020
    Publication date: July 14, 2022
    Inventors: Masaaki SATO, Yohei YAMAGUCHI
  • Publication number: 20220223332
    Abstract: A transformer device includes: a planar first coil; a first insulation layer being provided above the first coil; an intermediate layer being provided above the first insulation layer; a second insulation layer being provided above the intermediate layer; a planar second coil being provided above the second insulation layer and facing the first coil; and a pad having conductivity being provided above the second insulation layer and being connected to one end side of the second coil. The pad is disposed at a position at least partially overlapping the intermediate layer in plan view. The intermediate layer has hardness higher than hardness of the first insulation layer and the second insulation layer.
    Type: Application
    Filed: October 6, 2021
    Publication date: July 14, 2022
    Applicant: Mitsubishi Electric Corporation
    Inventors: Toshihiro IMASAKA, Manabu YOSHINO, Yasuo YAMAGUCHI, Yohei TORII
  • Publication number: 20220203429
    Abstract: In a case where a vacant space exists on only one side in a holder area of a stocker positioned at an exchange position, a first upper tool exchange unit is first moved in the left-right direction, and located in the vicinity of the vacant space. Next, the first upper tool exchange unit is moved forward and thereafter moved to the left, so that a tool retention member of the first upper tool exchange unit is brought into contact with one side surface of a tool. Then, under the contact state, the first upper tool exchange unit is moved to the right until the other side surface of the tool abuts on a stopper.
    Type: Application
    Filed: May 8, 2020
    Publication date: June 30, 2022
    Inventors: Masaaki SATO, Yohei YAMAGUCHI
  • Patent number: 11374025
    Abstract: The purpose of the invention is to form a stable oxide semiconductor TFT in a display device. The concrete structure is: A display device having a TFT substrate that includes a TFT having an oxide semiconductor layer comprising: the oxide semiconductor layer is formed on a first insulating film that is formed by a silicon oxide layer, the oxide semiconductor layer and an aluminum oxide film are directly formed on the first insulating film. The first insulating film becomes oxygen rich when the aluminum oxide film is formed on the first insulating film by sputtering. Oxygens in the first insulating film is effectively confined in the first insulating film, eventually, the oxygens diffuse to the oxide semiconductor for a stable operation of the oxide semiconductor TFT.
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: June 28, 2022
    Assignee: Japan Display Inc.
    Inventor: Yohei Yamaguchi
  • Patent number: 11355520
    Abstract: The purpose of the present invention is to improve reliability of the TFT of the oxide semiconductor. The feature of the invention is: A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed under the first oxide semiconductor, a first gate electrode is formed under the first gate insulating film, an interlayer insulating film is formed on the first oxide semiconductor; a drain wiring, which connects with the first oxide semiconductor, and a source wiring, which connects with the first oxide semiconductor, are formed on the interlayer insulating film; the drain wiring or the source wiring is a laminated structure of a second oxide semiconductor and a first metal, the second oxide semiconductor is under the first metal.
    Type: Grant
    Filed: September 9, 2020
    Date of Patent: June 7, 2022
    Assignee: Japan Display Inc.
    Inventor: Yohei Yamaguchi