Abstract: A wiring structure includes a structure body including a pattern, a first conductive layer above the structure body, the first conductive layer having a shape, the shape crossing an edge of a pattern of the structure body and reflecting a step of the edge of the pattern of the structure body, a first insulating layer above the first conductive layer, the first insulating layer having a first opening overlapping the edge of the pattern of the structure body in a plane view, and r is arranged with a second opening in a region overlapping the semiconductor layer in a plane view, a second conductive layer in the first opening, the second conductive layer being connected to the first conductive layer.

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

Abstract: RC-network components that include a substrate having a capacitor with a thin-film top electrode portion at a surface at one side of the substrate. The low ohmic semiconductor substrate is doped to contribute 5% or less to the resistance of the RC-network component. The resistance in series with the capacitor is controlled by providing a contact plate, spaced from the top electrode portion by an insulating layer, and a set of one or more bridging contacts in openings in the insulating layer. The bridging contacts electrically interconnect the top electrode portion and contact plate. Different resistance values can be set by appropriate selection of the number of bridging contacts. Temperature concentration at the periphery of the openings is reduced by providing reduced thickness portions in the insulating layer around the periphery of the openings.

Abstract: RC-network components that include a substrate and capacitor having a thin-film top electrode portion at a surface on one side of the substrate. The low ohmic semiconductor substrate is doped to contribute 5% or less to the resistance of the RC-network component. The resistance provided in series with the capacitor is controlled by providing a contact plate, spaced from the thin-film top electrode portion by an insulating layer, and a set of one or more bridging contacts passing through openings in the insulating layer. The bridging contacts electrically interconnect the thin-film top electrode portion and the contact plate. Different resistance values can be set by appropriate selection of the number of bridging contacts. The openings are elongated thereby reducing temperature concentration at their periphery. Correspondingly, the bridging contacts have an elongated cross-sectional shape.

Abstract: Provided is a hard coating film for foldable displays that does not form creases or cracks in the folding portion, and that is also excellent in reducing iridescent colors (interference mottling) caused by fine cracks in an easy-to-adhere resin layer or other layers. The hard coating film for foldable displays contains a polyester film having a thickness of 10 to 80 ?m, an easy-to-adhere resin layer, and a hard coating layer, the easy-to-adhere resin layer and the hard coating layer being stacked in this order on at least one surface of the polyester film, wherein the easy-to-adhere resin layer is a cured product of a composition containing at least one compound selected from the group consisting of titanium compounds and zirconium compounds and a polyester resin, and the polyester film having the easy-to-adhere resin layer stacked thereon but not yet having the hard coating layer stacked thereon satisfies characteristics within specific ranges.

Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

Abstract: A semiconductor device includes an insulating substrate, a first semiconductor region configured of polysilicon formed on the insulating substrate, an insulating film laminated on the first semiconductor region, a contact hole formed in the insulating film and reaching the first semiconductor region, a second semiconductor region configured of an oxide semiconductor formed on the insulating film, a contact electrode configured of a conductive material and electrically connected to the first semiconductor region, where the conductive material is embedded in the contact hole. The insulating film contains a metallic element at an interface with the contact hole, where the metallic element forms the oxide semiconductor.

Abstract: The purpose of the present invention is to improve reliability of the TFT of the oxide semiconductor. The feature of the invention is: A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed under the first oxide semiconductor, a first gate electrode is formed under the first gate insulating film, an interlayer insulating film is formed on the first oxide semiconductor; a drain wiring, which connects with the first oxide semiconductor, and a source wiring, which connects with the first oxide semiconductor, are formed on the interlayer insulating film; the drain wiring or the source wiring is a laminated structure of a second oxide semiconductor and a first metal, the second oxide semiconductor is under the first metal.

Abstract: A wiring structure includes a structure body including a pattern, a first conductive layer above the structure body, the first conductive layer having a shape, the shape crossing an edge of a pattern of the structure body and reflecting a step of the edge of the pattern of the structure body, a first insulating layer above the first conductive layer, the first insulating layer having a first opening overlapping the edge of the pattern of the structure body in a plane view, and r is arranged with a second opening in a region overlapping the semiconductor layer in a plane view, a second conductive layer in the first opening, the second conductive layer being connected to the first conductive layer.

Abstract: An information processing device is an information processing device including a processor. The processor obtains a detection result of a first detector for detecting a first target in first sensing data; and based on the detection result of the first detector, determines a setting of processing by a second detector for detecting a second target in second sensing data next in an order after the first sensing data, the second target being different from the first target.

Abstract: A semiconductor rectifier includes a transistor and a diode. The transistor includes a source electrode, a drain electrode and a gate electrode. The diode includes an anode electrode and a cathode electrode. The anode electrode is electrically connected to the gate electrode, and the cathode electrode is electrically connected to the source electrode.

Abstract: According to one embodiment, a semiconductor device includes an insulating substrate, a first metal layer on the insulating substrate, a first insulating layer on the insulating substrate and the first metal layer, a semiconductor layer on the first insulating layer, a second insulating layer on the semiconductor layer and the first insulating layer, a second metal layer on the second insulating layer, and a first electrode and a second electrode which are electrically connected to the semiconductor layer. The first metal layer overlaps the second metal layer. A third metal layer contacts a top surface of the second metal layer and a top surface of the first metal layer.

Abstract: Provided is a hard coating film for foldable displays that does not form creases or cracks in the folding portion, and that is also excellent in reducing iridescent colors (interference mottling) caused by fine cracks in an easy-to-adhere resin layer or other layers.

Abstract: The purpose of the invention is to form a stable oxide semiconductor TFT in a display device. The concrete structure is: A display device having a TFT substrate that includes a TET having an oxide semiconductor layer comprising: the oxide semiconductor layer is formed on a first insulating film that is formed by a silicon oxide layer, the oxide semiconductor layer and an aluminum oxide film are directly formed on the first insulating film. The first insulating film becomes oxygen rich when the aluminum oxide film is formed on the first insulating film by sputtering. Oxygens in the first insulating film is effectively confined in the first insulating film, eventually, the oxygens diffuse to the oxide semiconductor for a stable operation of the oxide semiconductor TET.

Abstract: A cam transmits and blocks light emitted from a light emitting portion. The cam moves to: a first position at which first and second cartridges are attachable to and detachable from a housing; a second position at which a first development roller contacts a first photosensitive drum, the second position being a position at which the cam has moved in a first direction from the first position; and a third position at which the first development roller is separated from the first photosensitive drum and a second development roller is separated from a second photosensitive drum, the third position being a position at which the cam has moved in the first direction from the second position. During an initial operation, based on a detection result of the sensor, a controller determines which of the first position, the second position, and the third position the cam is located at.

Abstract: A first tool retention member of a first tool exchange unit retains a first tool to be exchanged in a state of being engaged in an engagement hole of the first tool. A second tool retention member of a second tool exchange unit retains a second tool not to be exchanged in a state of being engaged in an engagement hole of the second tool. Subsequently, the first tool exchange unit moves in a left-right direction in a state in which a movement of the second tool exchange unit in the left-right direction is stopped.

Abstract: A transformer device includes: a planar first coil; a first insulation layer being provided above the first coil; an intermediate layer being provided above the first insulation layer; a second insulation layer being provided above the intermediate layer; a planar second coil being provided above the second insulation layer and facing the first coil; and a pad having conductivity being provided above the second insulation layer and being connected to one end side of the second coil. The pad is disposed at a position at least partially overlapping the intermediate layer in plan view. The intermediate layer has hardness higher than hardness of the first insulation layer and the second insulation layer.

Abstract: In a case where a vacant space exists on only one side in a holder area of a stocker positioned at an exchange position, a first upper tool exchange unit is first moved in the left-right direction, and located in the vicinity of the vacant space. Next, the first upper tool exchange unit is moved forward and thereafter moved to the left, so that a tool retention member of the first upper tool exchange unit is brought into contact with one side surface of a tool. Then, under the contact state, the first upper tool exchange unit is moved to the right until the other side surface of the tool abuts on a stopper.

Abstract: The purpose of the invention is to form a stable oxide semiconductor TFT in a display device. The concrete structure is: A display device having a TFT substrate that includes a TFT having an oxide semiconductor layer comprising: the oxide semiconductor layer is formed on a first insulating film that is formed by a silicon oxide layer, the oxide semiconductor layer and an aluminum oxide film are directly formed on the first insulating film. The first insulating film becomes oxygen rich when the aluminum oxide film is formed on the first insulating film by sputtering. Oxygens in the first insulating film is effectively confined in the first insulating film, eventually, the oxygens diffuse to the oxide semiconductor for a stable operation of the oxide semiconductor TFT.

Abstract: The purpose of the present invention is to improve reliability of the TFT of the oxide semiconductor. The feature of the invention is: A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed under the first oxide semiconductor, a first gate electrode is formed under the first gate insulating film, an interlayer insulating film is formed on the first oxide semiconductor; a drain wiring, which connects with the first oxide semiconductor, and a source wiring, which connects with the first oxide semiconductor, are formed on the interlayer insulating film; the drain wiring or the source wiring is a laminated structure of a second oxide semiconductor and a first metal, the second oxide semiconductor is under the first metal.