Abstract: A first tool retention member of a first tool exchange unit retains a first tool to be exchanged in a state of being engaged in an engagement hole of the first tool. A second tool retention member of a second tool exchange unit retains a second tool not to be exchanged in a state of being engaged in an engagement hole of the second tool. Subsequently, the first tool exchange unit moves in a left-right direction in a state in which a movement of the second tool exchange unit in the left-right direction is stopped.

Abstract: In a case where a vacant space exists on only one side in a holder area of a stocker positioned at an exchange position, a first upper tool exchange unit is first moved in the left-right direction, and located in the vicinity of the vacant space. Next, the first upper tool exchange unit is moved forward and thereafter moved to the left, so that a tool retention member of the first upper tool exchange unit is brought into contact with one side surface of a tool. Then, under the contact state, the first upper tool exchange unit is moved to the right until the other side surface of the tool abuts on a stopper.

Abstract: The purpose of the invention is to form a stable oxide semiconductor TFT in a display device. The concrete structure is: A display device having a TFT substrate that includes a TFT having an oxide semiconductor layer comprising: the oxide semiconductor layer is formed on a first insulating film that is formed by a silicon oxide layer, the oxide semiconductor layer and an aluminum oxide film are directly formed on the first insulating film. The first insulating film becomes oxygen rich when the aluminum oxide film is formed on the first insulating film by sputtering. Oxygens in the first insulating film is effectively confined in the first insulating film, eventually, the oxygens diffuse to the oxide semiconductor for a stable operation of the oxide semiconductor TFT.

Abstract: The purpose of the present invention is to improve reliability of the TFT of the oxide semiconductor. The feature of the invention is: A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed under the first oxide semiconductor, a first gate electrode is formed under the first gate insulating film, an interlayer insulating film is formed on the first oxide semiconductor; a drain wiring, which connects with the first oxide semiconductor, and a source wiring, which connects with the first oxide semiconductor, are formed on the interlayer insulating film; the drain wiring or the source wiring is a laminated structure of a second oxide semiconductor and a first metal, the second oxide semiconductor is under the first metal.

Abstract: The purpose of the present invention is to realize the display device having thin film transistors of the oxide semiconductor of stable characteristics. An example of the concrete structure is that: A display device having a substrate including a display area, plural pixels formed in the display area, the pixel includes a first thin film transistor having an oxide semiconductor film, a first insulating film made of a first silicon oxide on a first side of the oxide semiconductor film, a second insulating film made of a second silicon oxide on a second side of the oxide semiconductor film, wherein oxygen desorption amount per unit area from the first insulating film is larger than that from the second insulating film, when measured by TDS (Thermal Desorption Spectrometry) provided M/z=32 and a measuring range in temperature is from 100 centigrade to 500 centigrade.

Abstract: A display device includes a metal layer composed of multiple layers including a lowermost layer lower in an ionization tendency than a middle layer, the lowermost layer being in contact with and on the oxide semiconductor layer. Each channel region is interposed between a corresponding one of the first electrodes and a corresponding one of the second electrodes, constituting a corresponding one of the thin film transistors. The oxide semiconductor layer is continuous between a pair of channel regions included in an adjacent pair of thin film transistors. The metal layer is continuous between a pair of first electrodes included in the adjacent pair of thin film transistors.

Abstract: A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface; a dielectric film on the first main surface, the dielectric film having an electrode layer disposing portion and a protective layer covering portion, and a thickness of the protective layer covering portion in a first outer peripheral end of the dielectric film is smaller than a thickness of the electrode layer disposing portion; a first electrode layer on the electrode layer disposing portion; a first protective layer covering a second outer peripheral end of the first electrode layer and at least a part of the protective layer covering portion; and a second protective layer covering the first protective layer, wherein the first protective layer has a relative permittivity lower than that of the second protective layer, and the second protective layer has moisture resistance higher than that of the first protective layer.

Abstract: This invention provides a readily adhesive polyester film that has fewer flaws and in which no appearance defects occur due to tight winding during the storage of rolled products, and a method for efficiently producing the readily adhesive polyester film. More specifically, this invention provides a readily adhesive polyester film comprising a polyester film as a base film and a readily adhesive layer on at least one side of the base film, wherein the base film contains particles with an average particle diameter of 0.1-2 ?m or more in an amount of 1 mass % or less based on the mass of the base film, and the readily adhesive layer is a cured product of a composition comprising a copolymerized polyester resin (A), a blocked isocyanate group-containing urethane resin (B), and a silicone surfactant (C). This invention also provides a method for producing a readily adhesive polyester film.

Abstract: A semiconductor device that includes a semiconductor substrate having a first main face and a second main face opposite each other; a dielectric film on a part of the first main face, the dielectric film having an electrode layer disposing portion and a protective layer covering portion, and a thickness of the protective layer covering portion in an outer peripheral end of the dielectric film is smaller than a thickness of the electrode layer disposing portion of the dielectric film; a first electrode layer on the electrode layer disposing portion of the dielectric film; and a protective layer continuously covering a range from an end portion of the first electrode layer to the outer peripheral end of the dielectric film.

Abstract: A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the first conductive layer being electrically connected to the first oxide semiconductor layer, and an oxide layer between an upper surface of the first insulating layer and the first conductive layer, wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.

Abstract: A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.

Abstract: A semiconductor device including a first oxide semiconductor layer, a first gate electrode opposing the first oxide semiconductor layer, a first gate insulating layer between the first oxide semiconductor layer and the first gate electrode, a first insulating layer covering the first oxide semiconductor layer and having a first opening, a first conductive layer above the first insulating layer and in the first opening, the first conductive layer being electrically connected to the first oxide semiconductor layer, and an oxide layer between an upper surface of the first insulating layer and the first conductive layer, wherein the first insulating layer is exposed from the oxide layer in a region not overlapping the first conductive layer in a plan view.

Abstract: The purpose of the present invention is to realize the TFT of the oxide semiconductor having a superior characteristics and high reliability during the product's life. The structure of the present invention is as follows. A display device comprising: a substrate including a display area where plural pixels are formed, the pixel includes a first TFT of a first oxide semiconductor, a first gate insulating film is formed on the first oxide semiconductor, the first gate insulating film is a laminated film of a first silicon oxide film and a first aluminum oxide film, a gate electrode is formed on the first aluminum film.

Abstract: A tool for a press brake includes a tool main body, an attachment portion formed on a base end side of the tool main body and configured to be detachably attached to a tool installation portion of the press brake by using a tool changer, and a bending portion formed on a distal end side of the tool main body and used to bend a plate-shaped workpiece. An engagement hole having a circular cross-sectional shape to be engaged with a bar-shaped finger of the tool changer extends through the tool main body in a thickness direction. An anti-rotation bottomed depressed portion configured to receive a distal end of an anti-rotation member of the tool changer is formed in a vicinity of the engagement hole.

Abstract: A tool changer includes a slider provided behind (or in front of) a table of a press brake, and configured to slide in a right-left direction along a tool installation part of the table, a finger provided in the slider, and configured to be inserted into an engagement hole extending through a tool and to move in a front-rear direction, and an engagement member configured to be protruded and retracted relative to an outer peripheral surface of the finger on a tip side, and to be engaged with a peripheral edge portion of the engagement hole of the tool (or an inner stepped portion formed at an intermediate position of the engagement hole).

Abstract: The invention allows stable fabrication of a TFT circuit board used in a display device and having thereon an oxide semiconductor TFT. A TFT circuit board includes a TFT that includes an oxide semiconductor. The TFT has a gate insulating film formed on part of the oxide semiconductor and a gate electrode formed on the gate insulating film. A portion of the oxide semiconductor that is covered with the gate electrode 104 and a portion of the oxide semiconductor that is not covered with the gate electrode are both covered with a first interlayer insulating film. The first interlayer insulating film is covered with a first film 106, and the first film is covered with a first AlO film.

Abstract: A display device including a substrate having thin film transistors (TFT) comprising: the TFT including an oxide semiconductor film, a gate electrode and an insulating film formed between the oxide semiconductor film and the gate electrode, wherein a first aluminum oxide film and a second aluminum oxide film, which is formed on the first aluminum oxide film, are formed between the insulating film and the gate electrode, an oxygen concentration in the first aluminum oxide film is bigger than an oxygen concentration in the second aluminum oxide film.

Abstract: A tool for a press brake includes a tool main body, an attachment portion formed on a base end side (one end side) of the tool main body and configured to be detachably attached to a tool installation portion of the press brake by using a tool changer, and a bending portion formed on a tip side (the other end side) of the tool main body and used to bend a plate-shaped workpiece. At a correspondent position, in a lateral direction, in the tool main body to a gravity-center position (the gravity-center position of the tool), an engagement hole having a circular cross-sectional shape to be engaged with a bar-shaped finger of the tool changer extends in a thickness direction (a direction of a thickness of the tool).

Abstract: A tool holder for a lathe having a spindle permits improved arrangement of tools on a turret to maximize the allowable workpiece outer diameter for a given tool. A Z-axis feed mechanism moves the spindle and the turret relative to each other in a Z-axis direction along a center axis of the spindle, while an X-axis feed mechanism moves the spindle and the turret relative to each other in an X-axis direction orthogonal to the Z-axis direction. A plurality of tool holders is attached to the turret, each having a tool holding part. At least one of the tool holders holds the tool at a holding position such that, when indexed to a machining position by rotation of the turret, a cutting-edge reference point of the tool is offset with respect to an X-Z plane including a center axis of the turret.

Abstract: The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.