Abstract: A manufacturing method of a semiconductor device in which wire connection means is connected to an electrode formed on a surface of an IC and made of Cu or a material mainly containing Cu, comprises an oxide film removal treatment step of applying a Cu oxide film removal treatment to the electrode, and a supersonic bonding step of bonding the wire connection means with supersonic to the electrode after the oxide film removal treatment step.

Abstract: An electric terminal of an electronic device includes an external electrode, a flexible lead member for connecting the external electrode to a pad of the electronic device, and a support member for surrounding the lead member and mechanically supporting the external electrode when the lead member is deformed by a heat stress applied to the external electrode. By separating the electric connection function from the supporting function in the electric terminal, a reliable connection can be achieved after a heat cycle test of the electronic device.