Abstract: Methods for forming a vertical growth mask for use in etching applications are described herein. Disclosed embodiments include introducing a tungsten-containing deposition precursor and one or more carrier gases while igniting a plasma to deposit tungsten selectively on field regions of positive features of a patterned etch mask without substantial deposition on sidewalls of the positive features or on an exposed surface of a target layer underlying the patterned etch mask.

Abstract: A method for patterning a stack having a mask with a plurality of mask features is provided. A targeted deposition is provided, wherein the targeted deposition comprises a plurality of cycles, wherein each cycle comprises flowing a precursor to deposit a layer of precursor and targeted curing the layer of precursor, comprising flowing a curing gas, flowing a modification gas, forming a plasma from the curing gas and modification gas, and exposing the layer of precursor to the plasma providing a targeted curing, wherein plasma from the curing gas cures first portions of the layer of precursor and plasma from the modification gas modifies second portions of the layer of precursor, wherein the modification of the second portion reduces curing of the layer of precursor of the second portions of the layer of precursor. The stack is etched through the targeted deposition.

Abstract: Methods for forming a vertical growth mask for use in etching applications are described herein. Disclosed embodiments include introducing a tungsten-containing deposition precursor and one or more carrier gases while igniting a plasma to deposit tungsten selectively on field regions of positive features of a patterned etch mask without substantial deposition on sidewalls of the positive features or on an exposed surface of a target layer underlying the patterned etch mask.

Abstract: The present invention relates to a method for producing endothelial cells, including carrying out: (a) inducing a population of mesoderm-lineage cells containing endothelial progenitor cells from pluripotent stem cells without forming an embryoid body; and (b) culturing the population of mesoderm-lineage cells containing endothelial progenitor cells in the presence of RepSox, in this order. According to the present invention, endothelial cells with high quality can be efficiently produced from pluripotent stem cells. The endothelial cells obtained by the method of the present invention are useful for the production of, for example, a myocardial sheet, and expected to be utilized in the treatment of a heart disease. A myocardial sheet can be produced by mixing the endothelial cells obtained by the method of the present invention with myocardial cells and mural cells and culturing the cells.

Abstract: A gas delivery system for a substrate processing system includes a first manifold and a second manifold. A gas delivery sub-system selectively delivers gases from gas sources. The gas delivery sub-system delivers a first gas mixture to the first manifold and a second gas mixture. A gas splitter includes an inlet in fluid communication with an outlet of the second manifold, a first outlet in fluid communication with an outlet of the first manifold, and a second outlet. The gas splitter splits the second gas mixture into a first portion at a first flow rate that is output to the first outlet and a second portion at a second flow rate that is output to the second outlet. First and second zones of the substrate processing system are in fluid communication with the first and second outlets of the gas splitter, respectively.

Abstract: A method for etching features in a stack below a mask with features is provided. A fill layer is deposited on the mask, wherein the fill layer fills the features of the mask. The fill layer is etched back to expose the mask. The mask is selectively removed with respect to the fill layer. The stack is etched using the fill layer as a mask.

Abstract: A system for controlling a condition of a wafer processing chamber is disclosed. According the principles of the present disclosure, the system includes memory and a first controller. The memory stores a plurality of profiles of respective ones of a plurality of first control elements. The plurality of first control elements are arranged throughout the chamber. The first controller determines non-uniformities in a substrate processing parameter associated with the plurality of first control elements. The substrate processing parameter is different than the condition of the chamber. The first controller adjusts at least one of the plurality of profiles based on the non-uniformities in the substrate processing parameter and a sensitivity of the substrate processing parameter to the condition.

Abstract: Chabazite zeolites have a problem of low hydrothermal resistance. By steam treating a chabazite zeolite having a silica-alumina ratio and a crystallinity that are within certain ranges, a chabazite zeolite having a high crystallinity and a high hydrothermal resistance can be obtained.

Abstract: An object of the present invention is to provide a chabazite zeolite which does not easily peel from a substrate such as a honeycomb body even when the substrate has been coated therewith, while exhibiting excellent durability. The present invention relates to a chabazite zeolite for substrate coating, which includes (i) to (iv) below. (i) Si and Al are contained, (ii) an SiO2/Al2O3 molar ratio is in a range of 5<SiO2/Al2O3<10, (iii) an average crystal size is in a range of 0.05 ?m<average crystal size<1 ?m, and (iv) in a spectrum measured by 27Al-NMR, a ratio (ANFA/ATotal) between an area (ATotal) of all peaks in the spectrum and an area (ANFA) of peaks assigned to Al other than tetracoordinated Al is in a range of 20%?(ANFA/ATotal)?70%.

Abstract: The present invention relates to a method for producing endothelial cells, including carrying out: (a) inducing a population of mesoderm-lineage cells containing endothelial progenitor cells from pluripotent stem cells without forming an embryoid body; and (b) culturing the population of mesoderm-lineage cells containing endothelial progenitor cells in the presence of RepSox, in this order. According to the present invention, endothelial cells with high quality can be efficiently produced from pluripotent stem cells. The endothelial cells obtained by the method of the present invention are useful for the production of, for example, a myocardial sheet, and expected to be utilized in the treatment of a heart disease. A myocardial sheet can be produced by mixing the endothelial cells obtained by the method of the present invention with myocardial cells and mural cells and culturing the cells.

Abstract: A method for patterning a stack having a patterned organic mask with a plurality of mask features including sidewalls and tops, a hardmask and an etch layer, wherein the patterned organic mask is positioned over the hardmask which is positioned over the etch layer is provided. An atomic layer deposition is deposited, wherein the depositing the atomic layer deposition controllably trims the plurality of mask features of the patterned organic mask. The atomic layer deposition is broken through. The hardmask is selectively etched with respect to the patterned organic mask, wherein the atomic layer deposition reduces faceting of the plurality of mask features of the patterned organic mask during the selective etching.

Abstract: [Problem] Chabazite zeolites have a problem of low hydrothermal resistance. [Solution] By steam treating a chabazite zeolite having a silica-alumina ratio and a crystallinity that are within certain ranges, a chabazite zeolite having a high crystallinity and a high hydrothermal resistance can be obtained.

Abstract: Methods and apparatuses for spacer profile control using atomic layer deposition (ALD) in multi-patterning processes are described herein. A silicon oxide spacer is deposited over a patterned core material and a target layer of a substrate in a multi-patterning scheme. A first thickness of the silicon oxide spacer is deposited by multiple ALD cycles under a first oxidation condition that includes an oxidation time, a plasma power, and a substrate temperature. A second thickness of the silicon oxide spacer is deposited by multiple ALD cycles under a second oxidation condition, where the second oxidation condition is different than the first oxidation condition by one or more parameters. After etching the patterned core material, a resulting profile of the silicon oxide spacer is dependent at least in part on the first and second oxidation conditions.

Abstract: The present invention provides a therapeutic agent for periodontitis including: a hepatocyte growth factor (HGF) signal inhibitor as an active ingredient.

Abstract: An object of the present invention is to provide a chabazite zeolite which does not easily peel from a substrate such as a honeycomb body even when the substrate has been coated therewith, while exhibiting excellent durability. The present invention relates to a chabazite zeolite for substrate coating, which includes (i) to (iv) below. (i) Si and Al are contained, (ii) an SiO2/Al2O3 molar ratio is in a range of 5<SiO2/Al2O3<10, (iii) an average crystal size is in a range of 0.05 ?m< average crystal size <1 ?m, and (iv) in a spectrum measured by 27Al-NMR, a ratio (ANFA/ATotal) between an area (ATotal) of all peaks in the spectrum and an area (ANFA) of peaks assigned to Al other than tetracoordinated Al is in a range of 20%?(ANFA/ATotal)?70%.

Abstract: Methods and apparatuses for spacer profile control using atomic layer deposition (ALD) in multi-patterning processes are described herein. A silicon oxide spacer is deposited over a patterned core material and a target layer of a substrate in a multi-patterning scheme. A first thickness of the silicon oxide spacer is deposited by multiple ALD cycles under a first oxidation condition that includes an oxidation time, a plasma power, and a substrate temperature. A second thickness of the silicon oxide spacer is deposited by multiple ALD cycles under a second oxidation condition, where the second oxidation condition is different than the first oxidation condition by one or more parameters. After etching the patterned core material, a resulting profile of the silicon oxide spacer is dependent at least in part on the first and second oxidation conditions.

Abstract: A method for in-situ patterning a stack having a patterned mask with mask features including sidewalls and tops is provided. A plurality of patterning cycles is provided in a plasma chamber wherein each patterning cycle comprises: at least one (1) cycle of depositing an atomic layer deposition (ALD) over the mask features to create an ALD layer, wherein the ALD layer includes sidewalls over the sidewalls of the mask features and top portions over the tops of the mask features, and selectively etching the top portions of the ALD layer with respect to the sidewalls of the ALD layer.

Abstract: The present invention provides a composition and a method both for treating or preventing atopic dermatitis effectively. Provided is a composition which contains an acetylcholine inhibitor, e.g., an anticholinergic substance, as an active ingredient. Also provided is a method which includes a step of administering an acetylcholine inhibitor such as an anticholinergic substance. The detailed mechanism of the development of atopic dermatitis has not been elucidated so far. Therefore, it has been difficult to treat atopic dermatitis effectively. The composition according to the present invention can treat atopic dermatitis effectively through the inhibition of the action of acetylcholine.

Abstract: A system and method of identifying a selected process point in a multi-mode pulsing process includes applying a multi-mode pulsing process to a selected wafer in a plasma process chamber, the multi-mode pulsing process including multiple cycles, each one of the cycles including at least one of multiple, different phases. At least one process output variable is collected for a selected at least one of the phases, during multiple cycles for the selected wafer. An envelope and/or a template of the collected at least one process output variable can be used to identify the selected process point. A first trajectory for the collected process output variable of a previous phase can be compared to a second trajectory of the process output variable of the selected phase. A multivariate analysis statistic of the second trajectory can be calculated and used to identify the selected process point.

Abstract: A method for etching a tungsten containing layer in an etch chamber is provided. A substrate is placed with a tungsten containing layer in the etch chamber. A plurality of cycles is provided. Each cycle comprises a passivation phase for forming a passivation layer on sidewalls and bottoms of features in the tungsten containing layer. Additionally, each cycle comprises an etch phase for etching features in the tungsten containing layer.