Abstract: Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic etching without alternating between chemistries used to etch material on a substrate. A well-controlled etch front allows a synergistic effect of reactive radicals and inert ions to perform the etching, such that material is etched when the substrate is modified by reactive radicals and removed by inert ions, but not etched when material is modified by reactive radicals but no inert ions are present, or when inert ions are present but material is not modified by reactive radicals.

Abstract: A liquid crystal composition contains liquid crystals containing one kind of or two or more kinds of silicone surfactants, a phenyl-modified silicone oil and water. The liquid crystal composition of the present invention contains 5 to 95% by weight in total of one kind of or two or more kinds of silicone surfactants, 0.1 to 90% by weight of a phenyl-modified silicone oil and 0.1 to 90% by weight of water. The liquid crystal composition of the present invention can solubilize hydrophobic compounds having poor solubility (for example, hydrocarbon oils such as squalane, fatty acids such as oleic acid and lipoic acid and ester oils such as cetyl isooctanoate) and is thus useful, for example, as toiletry materials and cosmetic materials.

Abstract: A method for forming a stair-step structure in a substrate is provided, wherein the substrate has an organic mask, comprising at least one cycle, wherein each cycle comprises a) depositing a hardmask over the organic mask, b) trimming the organic mask, c) etching the substrate, d) trimming the organic mask, wherein there is no depositing a hardmask between etching the substrate and trimming the organic mask, e) etching the substrate, and f) repeating steps a-e a plurality of times forming the stair-step structure.

Abstract: Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic etching without alternating between chemistries used to etch material on a substrate. A well-controlled etch front allows a synergistic effect of reactive radicals and inert ions to perform the etching, such that material is etched when the substrate is modified by reactive radicals and removed by inert ions, but not etched when material is modified by reactive radicals but no inert ions are present, or when inert ions are present but material is not modified by reactive radicals.

Abstract: A method for forming a stair-step structure in a substrate is provided, wherein the substrate has an organic mask, comprising at least one cycle, wherein each cycle comprises a) depositing a hardmask over the organic mask, b) trimming the organic mask, c) etching the substrate, d) trimming the organic mask, wherein there is no depositing a hardmask between etching the substrate and trimming the organic mask, e) etching the substrate, and f) repeating steps a-e a plurality of times forming the stair-step structure.

Abstract: A system and method of identifying a selected process point in a multi-mode pulsing process includes applying a multi-mode pulsing process to a selected wafer in a plasma process chamber, the multi-mode pulsing process including multiple cycles, each one of the cycles including at least one of multiple, different phases. At least one process output variable is collected for a selected at least one of the phases, during multiple cycles for the selected wafer. An envelope and/or a template of the collected at least one process output variable can be used to identify the selected process point. A first trajectory for the collected process output variable of a previous phase can be compared to a second trajectory of the process output variable of the selected phase. A multivariate analysis statistic of the second trajectory can be calculated and used to identify the selected process point.

Abstract: A system and method of identifying a selected process point in a multi-mode pulsing process includes applying a multi-mode pulsing process to a selected wafer in a plasma process chamber, the multi-mode pulsing process including multiple cycles, each one of the cycles including at least one of multiple, different phases. At least one process output variable is collected for a selected at least one of the phases, during multiple cycles for the selected wafer. An envelope and/or a template of the collected at least one process output variable can be used to identify the selected process point. A first trajectory for the collected process output variable of a previous phase can be compared to a second trajectory of the process output variable of the selected phase. A multivariate analysis statistic of the second trajectory can be calculated and used to identify the selected process point.

Abstract: A gas delivery system for a substrate processing system includes a first manifold and a second manifold. A gas delivery sub-system selectively delivers gases from gas sources. The gas delivery sub-system delivers a first gas mixture to the first manifold and a second gas mixture. A gas splitter includes an inlet in fluid communication with an outlet of the second manifold, a first outlet in fluid communication with an outlet of the first manifold, and a second outlet. The gas splitter splits the second gas mixture into a first portion at a first flow rate that is output to the first outlet and a second portion at a second flow rate that is output to the second outlet. First and second zones of the substrate processing system are in fluid communication with the first and second outlets of the gas splitter, respectively.

Abstract: A system for controlling a condition of a wafer processing chamber is disclosed. According the principles of the present disclosure, the system includes memory and a first controller. The memory stores a plurality of profiles of respective ones of a plurality of first control elements. The plurality of first control elements are arranged throughout the chamber. The first controller determines non-uniformities in a substrate processing parameter associated with the plurality of first control elements. The substrate processing parameter is different than the condition of the chamber. The first controller adjusts at least one of the plurality of profiles based on the non-uniformities in the substrate processing parameter and a sensitivity of the substrate processing parameter to the condition.

Abstract: A display apparatus includes (A) a first substrate where a plurality of light emitting elements, which are formed by laminating a first electrode, a light emitting section which is configured by an organic layer provided with a light emitting layer, and a second electrode, are formed, and (B) a second substrate which is arranged to oppose the first substrate, in which the first substrate is further provided with a light reflecting layer formed of first members which propagate and output light from each light emitting element to an outside and second members placed between two first members, the first members have a truncated cone shape where a cutting head section opposes the light emitting element, a part of light propagated by the first members is completely reflected on opposing surfaces of the second members which oppose the first members.

Abstract: A system and method of identifying a selected process point in a multi-mode pulsing process includes applying a multi-mode pulsing process to a selected wafer in a plasma process chamber, the multi-mode pulsing process including multiple cycles, each one of the cycles including at least one of multiple, different phases. At least one process output variable is collected for a selected at least one of the phases, during multiple cycles for the selected wafer. An envelope and/or a template of the collected at least one process output variable can be used to identify the selected process point. A first trajectory for the collected process output variable of a previous phase can be compared to a second trajectory of the process output variable of the selected phase. A multivariate analysis statistic of the second trajectory can be calculated and used to identify the selected process point.

Abstract: A method for etching a tungsten containing layer in an etch chamber is provided. A substrate is placed with a tungsten containing layer in the etch chamber. A plurality of cycles is provided. Each cycle comprises a passivation phase for forming a passivation layer on sidewalls and bottoms of features in the tungsten containing layer. Additionally, each cycle comprises an etch phase for etching features in the tungsten containing layer.

Abstract: An object of the present invention is to provide a transdermal absorption enhancer by which various active ingredients are transdermally absorbed. In accordance with a transdermal absorption enhancer of the present invention which effective ingredient is lyotropic liquid crystal which has been utilized as a basic material for pharmaceutical preparations for external application and for cosmetics, transdermal absorption of a macromolecular substance and a water-soluble substance was able to be improved.

Abstract: Provision of a stable ?-lipoic acid. A method for producing ?-lipoic acid nanoparticles, the method comprising the steps of: preparing an aqueous dispersion liquid containing ?-lipoic acid and a nonionic surfactant; adding a divalent metal salt into the aqueous dispersion liquid, wherein the divalent metal salt is a divalent metal halide, a divalent metal acetate or a divalent metal gluconate; and adding an alkali metal carbonate or an alkali metal phosphate into the aqueous dispersion liquid which has been added with the divalent metal salt, thereby forming ?-lipoic acid nanoparticles.

Abstract: A display apparatus includes (A) a first substrate where a plurality of light emitting elements, which are formed by laminating a first electrode, a light emitting section which is configured by an organic layer provided with a light emitting layer, and a second electrode, are formed, and (B) a second substrate which is arranged to oppose the first substrate, in which the first substrate is further provided with a light reflecting layer formed of first members which propagate and output light from each light emitting element to an outside and second members placed between two first members, the first members have a truncated cone shape where a cutting head section opposes the light emitting element, a part of light propagated by the first members is completely reflected on opposing surfaces of the second members which oppose the first members.

Abstract: A method for etching a tungsten containing layer in an etch chamber is provided. A substrate is placed with a tungsten containing layer in the etch chamber. A plurality of cycles is provided. Each cycle comprises a passivation phase for forming a passivation layer on sidewalls and bottoms of features in the tungsten containing layer. Additionally, each cycle comprises an etch phase for etching features in the tungsten containing layer.

Abstract: A method for etching features in a plurality of silicon based bilayers forming a stack on a wafer in a plasma processing chamber is provided. A main etch gas is flowed into the plasma processing chamber. The main etch gas is formed into a plasma, while providing a first pressure. A wafer temperature of less than 20° C. is maintained. The pressure is ramped to a second pressure less than the first pressure as the plasma etches through a plurality of the plurality of silicon based bilayers. The flow of the main etch gas is stopped after a first plurality of the plurality of bilayers is etched.

Abstract: A method for forming devices with silicon gates over a substrate is provided. Silicon nitride spacers are formed on sides of the silicon gates. An ion implant is provided using the silicon nitride spacers as masks to form ion implant regions. A nonconformal layer is selectively deposited over the spacers and gates that selectively deposits a thicker layer on tops of the gates and spacers and between spacers than on sidewalls of the silicon nitride spacers. Sidewalls of the nonconformal layer are etched away on sidewalls of the silicon nitride spacers. The silicon nitride spacers are trimmed.

Abstract: A method for etching features in a plurality of silicon based bilayers forming a stack on a wafer in a plasma processing chamber is provided. A main etch gas is flowed into the plasma processing chamber. The main etch gas is formed into a plasma, while providing a first pressure. A wafer temperature of less than 20° C. is maintained. The pressure is ramped to a second pressure less than the first pressure as the plasma etches through a plurality of the plurality of silicon based bilayers. The flow of the main etch gas is stopped after a first plurality of the plurality of bilayers is etched.

Abstract: A polymer electrolyte fuel cell is provided with a fuel cell stack assembled by sandwiching a plurality of stacked single cell modules with a plurality of fastening members through a pair of end plates. The fuel cell includes a first elastic member arranged between the fastening member and the end plate and a plurality of second elastic members arranged between the end plate and the end of the fuel cell stack. Each of the second elastic members is arranged on the surface of the end plate corresponding to the electrode portion of a membrane electrode assembly in each of the single cell module, and each of the first elastic members is arranged on the surface of the end plate corresponding to a seal member arrangement region in which the seal member is arranged between the periphery of the membrane electrode assembly and a pair of separator plates in each single cell module.