Abstract: An optical recording apparatus uses a method of searching for a recording power, where the method includes: searching for a first optimum recording power; recording data on an optical disc at the first optimum recording power; determining whether recording environments are changed when a user desires to re-record the data after recording the data in the optical recording apparatus; re-searching for the optimum recording power when the recording environments are changed, and determining the researched optimum recording power to be a second optimum recording power; and recording the data at the second optimum recording power.

Abstract: Disclosed is a rubber composition for a studless tire tread, comprising natural rubber, styrene-butadiene rubber and butadiene rubber, as raw rubber, and including 1˜10 parts by weight of co-poly-(paraphenylene/3,4-oxydiphenylene terephthalamide) fiber based on 100 parts by weight of the solid content of the raw rubber. Particularly, this invention provides a rubber composition for a studless tire tread, in which not only ice braking performance but also handling stability on dry roads and wear resistance are increased.

Abstract: This invention provides a thermally curable resin copolymer (A), composed mainly of an ethylenically unsaturated monomer (a-1), which produces an acid via decomposition at 150° C. or more, an ethylenically unsaturated monomer (a-2) containing an epoxy group copolymerizable with the ethylenically unsaturated monomer (a-1), and an ethylenically unsaturated monomer (a-3) having a reactive silyl group; a thermally curable resin composition including the thermally curable resin copolymer; a cured film formed from the composition; and a liquid crystal display including the cured film. The thermally curable resin composition has extended storage stability and can be formed into the cured film having good adhesion to a substrate.

Abstract: A method of forming double gate dielectric layers composed of an underlying oxide layer and an overlying oxy-nitride layer is provided to prevent degradation of gate dielectric properties due to plasma-induced charges. In the method, the oxide layer is thermally grown on a silicon substrate under oxygen gas atmosphere to have a first thickness, and then the oxy-nitride layer is thermally grown on the oxide layer under nitrogen monoxide gas atmosphere to have a second thickness smaller than the first thickness. The substrate may have a high voltage area and a low voltage area, and the oxide layer may be partially etched in the low voltage area so as to have a reduced thickness. The oxy-nitride layer behaves like a barrier, blocking the inflow of the plasma-induced charges.

Abstract: Disclosed herein is a washing apparatus in which the top of a base pan is inclined downward toward a mounting position of a water leakage sensor, so that water, dropped onto the base pan, is gathered toward the water leakage sensor regardless of a water drop position, thereby enabling prompt operation of the water leakage sensor and achieving an enhancement in reliability. Furthermore, the washing apparatus comprises holders by which the water leakage sensor is vertically caught after being vertically press fitted to the base pan, thereby enabling the water leakage sensor to be mounted to the base pan via a single vertical press-fitting operation, resulting in an enhancement in assembling efficiency.

Abstract: A photosensitive resin composition includes: a copolymer of an unsaturated carboxylic acid and a compound with unsaturated ethylenic bonds; an acrylate multi-functional monomer; a phenolic compound; a photopolymerization initiator; and an organic solvent. The photosensitive resin composition according to the present invention has superior resolution and development property because of enlarged solubility differentiation between exposed and unexposed region. The photosensitive resin composition can be effectively used for a transparent protective layer, an insulating layer, a passivation layer, a patterned spacer, etc., for LCDs.

Abstract: A method for fabricating a metal interconnect in a semiconductor device is disclosed. A disclosed method comprises: forming a via hole by a damascene process in an interlayer dielectric layer on a substrate; depositing a conducting layer on the substrate including the via hole; forming a photoresist pattern on the conducting layer; and forming a metal interconnect using the photoresist pattern as an etching mask, the lower part of the metal interconnect being wider than the upper part thereof.

Abstract: A method for forming a metallic interconnect in a semiconductor device is disclosed. An example method forms an IDL on a substrate including predetermined devices, forms a via hole in the IDL, depositing a first metal diffusion preventive layer and a metal layer to form a via plug on the IDL, and performs a planarization process using the first metal diffusion preventive layer using as an etching stop layer. In addition, the example method forms a metallic interconnect on the first metal diffusion preventive layer, deposits the other metal diffusion preventive layer on the metallic interconnect, and etches a predetermined part of first and second metal diffusion preventive layers and the metallic interconnect using a mask pattern.