Abstract: A dinuclear transition metal compound of Formula 1 is provided: where R1, R2, R3, R4, R5, R, L, A, B, X, M, z, and n are the same as in the description of the present invention. The dinuclear transition metal compound includes two transition metal compounds connected each other by a bridging group so that a decrease in catalyst activation due to a polar functional group can be prevented. A catalyst composition including the dinuclear transition metal compound is highly active for a monomer having a polar functional group.

Abstract: A groundwater collecting apparatus which can continuously collect groundwater, and can selectively collect groundwater at a specific depth by directly generating vertical movement is provided. The groundwater collecting apparatus includes: a vibration unit selectively admitting groundwater which exists in the monitoring well according to vibration in a vertical direction; a driving unit being supplied a power to vibrate the vibration unit in a vertical direction; and a hollow guide pipe being connected to the vibration unit to guide the groundwater to a ground, the groundwater having flowed into the vibration unit through a channel inlet of the vibration unit.

Abstract: A fluid collecting apparatus inserted in a borehole for collecting fluid in the borehole. The fluid collecting apparatus may include a first packer and a second packer which are selectively adhered to an inside of the borehole, a first supply pipe and a second supply pipe which supply expansion fluid to each of the first packer and the second packer, and a guide tube which guides fluid in a collecting space between the first packer and the second packer to an outside of the borehole. Also, the second supply pipe moves with the second packer in a longitudinal direction of the borehole, and a passage which does not communicate with the first supply pipe is formed. Accordingly, the fluid collecting apparatus may independently control the first and second packers, and thus fluid in a desired depth and region within the borehole may be easily collected.

Abstract: The present invention relates to a polyolefin that has high environmental stress cracking resistance (ESCR), a high impact property, and an excellent die swell property, and a method of preparing the same. According to the method of preparing polyolefin of the present invention, a supported hybrid metallocene catalyst and an alpha olefin comonomer having 4 or more carbon atoms are used to obtain polyolefin having the bimodal or multimodal molecular weight distribution curves during the single reactor polymerization. The polyolefin has excellent processability, a melt flow rate ratio (MFRR) that is useful to processing, excellent shapability, impact strength, tensile strength, in particular, environmental stress cracking resistance (ESCR) and full notch creep test (FNCT), thus being used to manufacture the blow molded product.

Abstract: An antenna device for a portable wireless terminal is provided. The antenna device includes a main antenna for mobile communication for transmitting and receiving signal in a first frequency band, a Transmit (Tx) sub-antenna for transmitting signals in a second frequency band, a Receive (Rx) sub-antenna for receiving signals in a third frequency band, and a controller for selectively using one of the Tx sub-antenna and the Rx sub-antenna if the second frequency band overlaps with the third frequency band, and for providing control such that the Tx sub-antenna and the Rx sub-antenna are simultaneously used if the second frequency band does not overlap with the third frequency band. Accordingly, without increasing the volume of the portable wireless terminal, an antenna space can be ensured and radiation performance can be improved.

Abstract: A micro USB memory package and method for manufacturing the same, which can meet the USB standard specification, can have a light, thin, short and small configuration, can have various applications, and can simply expand the memory capacity thereof. The micro USB memory package comprises a substrate with a plurality of circuit patterns formed on the top surface thereof, at least one of passive elements connected with the circuit patterns of the substrate, at least one of controllers connected with the circuit patterns of the substrate, at least one of flash memories connected with the circuit patterns of the substrate, and an encapsulation part encapsulating the passive elements, the controllers and the flash memories on the substrate, and at least one of USB lands connected with the circuit patterns by a conducting via are formed on the under surface of one side of the substrate.

Abstract: The present invention relates to a synthesis method of metal cyclopentadienide by direct reaction of dicyclopentadiene with a group 1 metal in the presence of an aprotic solvent. Unlike the conventional method depending on retro Diels-Alder reaction of dicyclopentadiene to generate indirectly cyclopentadiene, the method of the present invention favors generation of cyclopentadiene and metal cyclopentadienide as well by adding dicyclopentadiene directly when the reaction temperature reaches in the boiling point of a reaction solvent.

Abstract: A drain pump including a case including a mounting bracket; a first connection member mounted to the mounting bracket to be spaced from the cabinet; a second connection member inserted in the first connection member; and a fastening member passed through the cabinet and inserted in the second connection member so that the case is mounted to the cabinet. Since the first connection member is spaced from the cabinet, the second connection member can be prevented from being damaged by vibration of the drain pump.

Abstract: The present invention provides a new supported catalyst for olefin polymerization prepared by reacting a novel transition metal compound on a cocatalyst-supported support, in which the transition metal compound is coordinated with a monocyclopentadienyl ligand to which an amido-quinoline group is introduced, a method for preparing the same, and a method for preparing a polyolefin using the same. The transition metal catalyst compound used in the present invention is configured such that an amido group is linked in a cyclic form via a phenylene bridge. Thus, a pentagon ring structure of the transition metal compound is stably maintained, so that monomers easily approach the transition metal compound and the reactivity is also high.

Abstract: The present invention provides 1-alkene-acrylate based copolymer prepared by a method comprising step of a radical polymerization reaction of 1-alkene and acrylate based monomer under presence of a metal oxide or Lewis acid. The 1-alkene-acrylated based copolymer according to the present invention is a random copolymer of 1-alkene and a polar monomer, and an amount of a polar group contained in the copolymer is very high so that the alkene is not crystalline. Accordingly, when the copolymer is processed into a polymer film, a transparency of the polymer is not affected. Due to such a feature, the copolymer can be used for optical products.

Abstract: A deposition apparatus includes a gas inflow tube, a plasma electrode, a substrate support functioning as an opposite electrode to the plasma electrode and mounting a substrate thereon, a plasma connector terminal connected to the plasma electrode, a first voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a continuous mode, and a second voltage application unit connected to the plasma connector terminal to apply a voltage thereto in a pulse mode. The voltage applied by the first voltage application unit is an RF voltage of about 13.56 MHz, and the voltage applied by the second voltage application unit is a VHF voltage ranged from about 27 MHz to about 100 MHz.

Abstract: A mobile communication terminal is provided that includes a terminal body and a camera assembly mounted in the terminal body, wherein the camera assembly includes a camera, a driving unit for generating driving power for rotating the camera, and a housing assembled as one body at the terminal body by rotatably supporting the camera and fixing the driving unit. The camera and the driving unit can be stably supported within the housing and can be easily mounted therein.

Abstract: A method for forming an amorphous silicon thin film is disclosed. In some embodiments, a method includes loading a substrate into a reaction chamber; and conducting a plurality of deposition cycles on the substrate. Each of at least two of the cycles includes: supplying a silicon precursor to the reaction chamber during a first time period; applying radio frequency power to the reaction chamber at least partly during the first time period; stopping supplying of the silicon precursor and applying of the radio frequency power during a second time period between the first time period and an immediately subsequent deposition cycle; and supplying hydrogen plasma to the reaction chamber during a third time period between the second time period and the immediately subsequent deposition cycle. The method allows formation of an amorphous silicon film having an excellent step-coverage and a low roughness at a relatively low deposition temperature.

Abstract: Methods of forming a gate structure for an integrated circuit memory device include forming a first dielectric layer having a dielectric constant of under 7 on an integrated circuit substrate. Ions of a selected element from group 4 of the periodic table and having a thermal diffusivity of less than about 0.5 centimeters per second (cm2/s) are injected into the first dielectric layer to form a charge storing region in the first dielectric layer with a tunnel dielectric layer under the charge storing region. A metal oxide second dielectric layer is formed on the first dielectric layer, the second dielectric layer. The substrate including the first and second dielectric layers is thermally treated to form a plurality of discrete charge storing nano crystals in the charge storing region and a gate electrode layer is formed on the second dielectric layer. Gate structures for integrated circuit devices and memory cells are also provided.

Abstract: The present invention relates to an optical frequency synthesizer and an optical frequency synthesizing method using femtosecond laser optical injection locking, which inject a femtosecond laser optical frequency comb into a diode laser, thus obtaining single-mode laser light, phase-locked to only a single mode in the optical frequency comb, and which change the optical frequency and interval, that is, the repetition rate, of a femtosecond laser, together with the frequency of a semiconductor laser, thus scanning optical frequencies while realizing a single desired optical frequency. The optical frequency synthesizer using femtosecond laser optical injection locking, includes a mode-locked femtosecond laser (110), which is a master laser, and a diode laser (120), which is a slave laser and into which laser light emitted from the femtosecond laser is injected.

Abstract: A dish washer is disclosed, in which assembly of the dish washer is improved, and an error operation and trouble of a driver due to water leaked in a base can be avoided. To this end, the dish washer includes a tub (3) provided with a space for washing the dishes and a communication hole (3a) formed on the bottom, a base (100) fixed to the bottom of the tub (3), having a plane portion (100a) which is not connected with the outside, a sump assembly (200) provided in the plane portion of the base and fixed to the tub (3) while shielding the communication hole (3a) of the bottom, having a sump (220) and a driver (210), wherein washing water is received in the sump (220) and the driver (210) transmits a driving force to the sump (220), and a leakage sensing device (300) provided in the base (100), sensing a water level of washing water leaked in the base (100). Thus, assembly of the dish washer can be improved, and also life span of the driver can be increased.

Abstract: Methods of forming a gate structure for an integrated circuit memory device include forming a first dielectric layer having a dielectric constant of under 7 on an integrated circuit substrate. Ions of a selected element from group 4 of the periodic table and having a thermal diffusivity of less than about 0.5 centimeters per second (cm2/s) are injected into the first dielectric layer to form a charge storing region in the first dielectric layer with a tunnel dielectric layer under the charge storing region. A metal oxide second dielectric layer is formed on the first dielectric layer, the second dielectric layer. The substrate including the first and second dielectric layers is thermally treated to form a plurality of discrete charge storing nano crystals in the charge storing region and a gate electrode layer is formed on the second dielectric layer. Gate structures for integrated circuit devices and memory cells are also provided.

Abstract: Cyclical methods of depositing a silicon nitride film on a substrate are provided. In one embodiment, a method includes supplying a chlorosilane to a reactor in which a substrate is processed; supplying a purge gas to the reactor; and providing ammonia plasma to the reactor. The method allows a silicon nitride film to be formed at a low process temperature and a high deposition rate. The resulting silicon nitride film has a relatively few impurities and a relatively high quality. In addition, a silicon nitride film having good step coverage over features having high aspect ratios and a thin and uniform thickness can be formed.

Abstract: A dish washer is disclosed. The dish washer has improved washing efficiency while being constructed in a compact structure. A general dish washer is an apparatus that injects wash water to dishes so as to wash the dishes, and dries and/or sterilizes the washed dishes. The washer according to the present invention includes a filter unit (170) filtering at least some of the wash water injected form a tub (1), fallen downward, and directed to a collection part of sump (20).

Abstract: A dish washer and a control method thereof are disclosed. The dish washer includes a UV sterilization device (60) capable of sterilizing inside of the dish washer and a fan (11) capable of exhausting air in a tub (2) outside. A controller (80) controls the UV sterilization device (60) to sterilize the inside of the dish washer by using ultraviolet rays, and controls the fan (11) to exhaust harmful gas like ozone which may be generated during the sterilization.