Abstract: Disclosed herein is a multi-compartment type refrigerator and method for controlling the same. The refrigerator includes a plurality of storage compartments. A plurality of evaporators are each positioned in each of the storage compartments, respectively. A compressor supplies refrigerant to the evaporators through a branched refrigerant conduit. A plurality of opening/closing valves are each positioned on a refrigerant conduit upstream of each of the evaporators for selectively controlling supply of refrigerant to the evaporators. Reference compartment defining means defines as a reference storage compartment one of the storage compartments that has a relatively great load. Control means controls starting of the compressor depending on a change of a temperature of the reference storage compartment.

Abstract: A refrigerator having at least one storage compartment, an evaporator cooling the storage compartment, a compressor, and a compressor driving part supplying electric power to the compressor, comprising: a heater heating a part of the refrigerator; a heater driving part supplying electric power to the heater; a temperature sensor sensing an inside temperature of the storage compartment and a controller controlling the heater driving part to turn off the heater when the inside temperature of the storage compartment sensed by the temperature sensor rises beyond a preset temperature in a state that the compressor is operated by the compressor driving part and cool air is supplied to the storage compartment through the evaporator. With this configuration, a refrigerator is provided which can minimize a rise in the inside temperature thereof when the compressor stops due to trouble, and restarts the compressor stably.

Abstract: Disclosed herein is a multi-compartment type refrigerator and method for controlling the same. The refrigerator includes a plurality of storage compartments. A plurality of evaporators are each positioned in each of the storage compartments, respectively. A compressor supplies refrigerant to the evaporators through a branched refrigerant conduit. A plurality of opening/closing valves are each positioned on a refrigerant conduit upstream of each of the evaporators for selectively controlling supply of refrigerant to the evaporators. Reference compartment defining means defines as a reference storage compartment one of the storage compartments that has a relatively great load. Control means controls starting of the compressor depending on a change of a temperature of the reference storage compartment.

Abstract: An obstruction detection apparatus is provided for use in closing a power driven vent, such as a window, that is located in an opening. When the vent includes a first closing edge that moves as the vent is closed and the opening includes a second closing edge that is contacted by the first closing edge when the vent is in a fully closed position, the apparatus includes a detector configured to detect an obstruction at points all along the second closing edge without requiring contact between the obstruction and the vent and to deliver a detection signal when an obstruction is detected. A controller is connected to the detector for receiving the detection signal and delivering a corresponding alarm signal.

Abstract: A fluorine compound-containing composite material consists essentially of a metal or polymer matrix and particles or fibers of a polytetrafluoroethylene oligomer having a number average molecular weight of 10,000 or less, the proportion of the number of fluorine atoms to the number of the total atoms at the surface portion of the composite material being 40% or more.

Abstract: An obstruction detection apparatus is provided for use in closing a power driven vent, such as a window, that is located in an opening. When the vent includes a first closing edge that moves as the vent is closed and the opening includes a second closing edge that is contacted by the first closing edge when the vent is in a fully closed position, the apparatus includes a detector configured to detect an obstruction at points all along the second closing edge without requiring contact between the obstruction and the vent and to deliver a detection signal when an obstruction is detected. A controller is connected to the detector for receiving the detection signal and delivering a corresponding alarm signal.

Abstract: A fluorine compound-containing composite material consists essentially of a metal or polymer matrix and particles or fibers of a polytetrafluoroethylene oligomer having a number average molecular weight of 10,000 or less, the proportion of the number of fluorine atoms to the number of the total atoms at the surface portion of the composite material being 40% or more.

Abstract: The present invention provides a recording material containing a carbonaceous powder whose surfaces are modified with a fluorine gas. Even when the recording material of the present invention is stored for a long period of time, a carbonaceous powder such as a graphite powder or carbon black neither coheres nor precipitates. For example, even if the recording material of the present invention is used in a felt pen or a ball-point pen, the carbonaceous powder does not cohere in the container or the pen point, and therefore any clogging does not occur in the pen point and good writing is possible.

Abstract: The present invention provides a recording material containing a carbonaceous powder whose surfaces are modified with a fluorine gas. Even when the recording material of the present invention is stored for a long period of time, a carbonaceous powder such as a graphite powder or carbon black neither coheres nor precipitates. For example, even if the recording material of the present invention is used in a felt pen or a ball-point pen, the carbonaceous powder does not cohere in the container or the pen point, and therefore any clogging does not occur in the pen point and good writing is possible.

Abstract: An internal power voltage generating circuit of a semiconductor memory device may be constructed with a voltage sensing circuit (100) and a reference voltage controller (300) providing an internal power voltage int. V.sub.CC of a given reference voltage amplitude V.sub.ref and an external power voltage amplitude ext. V.sub.CC. Thus, when a high voltage over an operating voltage of a chip is applied to a pad (10) of the chip, the internal power voltage is raised to the level of the external power voltage. Therefore, when stress is added to the chip during a "burn-in-test", the defective chip is easily detected. Consequently, the reliability of those semiconductor memory devices subjected to post-manufacturing testing can be improved.

Abstract: A circuit for generating an internal voltage to be supplied to memory elements of a semiconductor memory chip during normal operation and for providing an external voltage to the memory elements during a burn-in test operation. The circuit may be constructed with a driver circuit (50) which receives an external voltage and is controlled to generate the internal voltage. A comparator (300) compares the internal voltage to a first reference voltage to produce a control signal G2 to control the driver circuit (50). An external voltage detector (100) compares a second reference voltage to the external voltage to generate control signal B2. A driver control circuit (200) is enabled by control signal B2, if the external voltage is less than the second reference voltage, to pass control signal G2 to the driver circuit and thereby enable generation of the internal voltage to be equal to, or less than, the operating voltage of the semiconductor memory chip.

Abstract: A data output buffer suitable for use in a semiconductor memory device includes a first input circuit coupled to a first data signal and a first control signal, e.g., an output enable signal, and a second input circuit coupled to a second data signal which is the inverse of the first data signal and the first control signal. The data output buffer also includes a pull-up circuit responsive to the output of the first input circuit for selectively raising the data output node to a high voltage level, e.g., Vcc, and a pull-down circuit responsive to the output of the second input circuit for selectively lowering the data output node to a low voltage level, e.g., Vss. The data output buffer further includes a preset circuit comprised of a first preset control circuit responsive to the output of the first input circuit and a second control signal, e.g., an inverse output enable signal, for selectively raising the data output node from the low voltage level to an intermediate voltage level, e.g.

Abstract: A write driver of a semiconductor memory device is disclosed which includes: a data input incorporating a noninverted data input portion and an inverted data input portion for buffering an inputted data signal and an inverted data signal in response to write enable signal; a pulse generator generating a first control pulse signal in response to a state transition of the data signal or inverted data signal and a phase-inverted second control pulse signal of the first control pulse signal in response to an inverted write enable signal; a transmitter for transmitting the inverted and noninverted data which have been buffered to a pair of data lines in response to the first control pulse signal; and a precharger for precharging the pair of data lines in response to the second control pulse signal.

Abstract: In oxide film removing equipment for removing a SiO.sub.2 film on a semiconductor substrate by using hydrogen fluoride, a liquid mixture of hydrogen fluoride and methyl alcohol is prepared in a chemical factory beforehand. The liquid mixture of hydrogen fluoride and methyl alcohol is heated to generate azeotropic vapor at a semiconductor works and the vapor is used to remove the SiO.sub.2 film on the substrate. The liquid mixture of hydrogen fluoride and methyl alcohol previously prepared in the chemical factory increases safety during an operation at the semiconductor works.

Abstract: Disclosed is a carbon electrode having low polarizability, comprising a porous carbon block and, contained in the pores thereof, a metal fluoride mixture composed of LiF and a metal fluoride other than LiF. This carbon electrode can easily be obtained by a skillful impregnation method. When such a carbon electrode is used as an anode in electrolyzing an electrolyte comprising a mixed molten salt system of potassium fluoride and hydrogen fluoride in an electrolytic cell, polarization of the anode is extremely low and the anode effect is remarkably suppressed so that the electrolysis can stably be performed while exhibiting not only a high anodic current density but also a low voltage.

Abstract: For a SRAM having a sense amplifier amplifying memory data and a read/write control circuit controlling operations of the sense amplifier, a data output buffer circuit is provided, which includes: a drive output node from which data output buffer provides output data; a first circuit providing a NOR function of an SAS signal from the sense amplifier and an output enable signal (OE) from the read/write control circuit; a second circuit providing a NOR function of an SAS signal from the sense amplifier and the output enable signal (OE) from the read/write control circuit; a third circuit eliminating noise produced by transition in the outputs of the first and second circuit and also enhancing a response time; a fourth circuit inverting the output of the first circuit; a fifth circuit inverting twice, sequentially, the output of the second circuit; and a sixth circuit responsive to the fourth and fifth circuit, alternatively providing, depending on the SAS and an SAS signal from the sense amplifier, one of three

Abstract: A level converter for converting a TTL level of an input signal to a CMOS level comprises a NOR gate circuit (1), including a first voltage pull-up PMOS transistor (PI2), to which the TTL signal is inputted, an inverter (INV) connected to the NOR gate circuit, and a speed control circuit (2). The speed control circuit includes a second voltage pull-up PMOS transistor (PI4), and means are provided for connecting the first and second transistors in parallel between VCC and the input to the inverter. A fast conversion speed is obtained by turning on both PMOS transistors (PI2, PI4) when the TTL signal goes from the high level to the low level.

Abstract: A method for removing a film on a silicon layer formed on a surface of a substrate includes the steps of: (a) placing a substrate in a reaction chamber to be isolated hermetically from the outside air, and (b) feeding anhydrous hydrogen fluoride and alcohol simultaneously into the reaction chamber. Preferably, the method further includes the step of feeding only alcohol into the reaction chamber prior to and/or subsequent to the step (b). An alcohol layer is formed on the substrate surface, whereby the film can be removed uniformly by anhydrous hydrogen fluoride. A by-product of the reaction is taken out from the system of reaction by means of the alcohol on the substrate. No by-product remains on the substrate after the reaction. Since the silicon layer after the reaction is covered with alcohol, re-growth of a native oxide film thereon is also suppressed and on ionic contamination such as fluorine remains on the substrate surface.

Abstract: An input translating circuit for a CMOS device is disclosed which can be operated without being influenced by a level of the supply voltage. This is made possible by providing a supply voltage level discriminating means consisting of a voltage dividing network for dividing the supply voltage into predetermined voltages and a level comparing means for comparing the divided voltage with the reference voltage level, and further by providing a constant voltage supply means, so that a trip voltage, used in the operation of the circuit, can be maintained at a constant level regardless of the variations of the supply voltage. Further, the circuit according to the present invention eliminates corresponding mask work requirements for the option of the power voltage in the manufacturing process, thereby lowering production complexity costs.

Abstract: A CMOS input buffer for converting the TTL level signals to the CMOS level signals, thereby being capable of stably operating within all allowable range of the power supply voltage, is disclosed. Said CMOS input buffer includes an inverter, a reference voltage generating circuit, a power supply voltage tracer circuit and an input circuit. The input circuit includes P-channel MOS transistors and N-channel MOS transistors so as to supply a stable logic output in response to the input signal of TTL level, regardless of variation of the power supply voltage Vcc, under the control of a voltage that is approximately proportional to the difference between the reference voltage and the power supply voltage within a fixed range of the power supply voltage.