Abstract: A memory device includes: a substrate; a bit line which is vertically oriented from the substrate; a plate line which is vertically oriented from the substrate; and a memory cell provided with a transistor and a capacitor that are positioned in a lateral arrangement between the bit line and the plate line, wherein the transistor includes: an active layer which is laterally oriented to be parallel to the substrate between the bit line and the capacitor; and a line-shaped lower word line and a line-shaped upper word line vertically stacked with the active layer therebetween and oriented to intersect with the active layer.

Abstract: A memory device includes: a substrate; a bit line which is vertically oriented from the substrate; a plate line which is vertically oriented from the substrate; and a memory cell provided with a transistor and a capacitor that are positioned in a lateral arrangement between the bit line and the plate line, wherein the transistor includes: an active layer which is laterally oriented to be parallel to the substrate between the bit line and the capacitor; and a line-shaped lower word line and a line-shaped upper word line vertically stacked with the active layer therebetween and oriented to intersect with the active layer.

Abstract: A system-in-package module includes a substrate, an application specific integrated circuit (ASIC) chip on the substrate, first wafer level package (WLP) memories on the substrate spaced apart from the ASIC chip in a first direction parallel to an upper surface of the substrate, and second WLP memories on the substrate spaced apart from the ASIC chip in a direction opposite to the first direction.

Abstract: The method for preparing a ferrite-based coating catalyst including mixing a support, a ferrite-based catalyst, a cellulose-based additive, and water, in which a content of the cellulose-based additive is 0.5 wt % or less based on a total weight of the ferrite-based catalyst.

Abstract: A method for preparing a metal complex catalyst by (A) obtaining a precipitate by bringing a metal precursor solution comprising a zinc (Zn) precursor, a ferrite (Fe) precursor, and water into contact with a basic aqueous solution; (B) obtaining a zinc ferrite catalyst by filtering and calcining the precipitate; and (C) supporting an acid onto the zinc ferrite catalyst, and a metal complex catalyst prepared thereby.

Abstract: An exemplary embodiment of the present application provides a method for preparing butadiene, the method comprising a process of performing an oxidative dehydrogenation reaction by introducing a reactant comprising butene, oxygen, nitrogen, and steam into a reactor which is filled with a catalyst, in which during a first start-up of the oxidative dehydrogenation reaction, the oxygen is introduced into the reactor before the butene, or the oxygen is introduced into the reactor simultaneously with the butene.

Abstract: A memory device includes: a first memory cell mat that includes first multi-layer level sub word lines positioned over a substrate; a second memory cell mat that is laterally spaced apart from the first memory cell mat and includes second multi-layer level sub word lines; a first sub word line driver circuit that is positioned underneath the first memory cell mat; and a second sub word line driver circuit that is positioned underneath the second memory cell mat, wherein the first sub word line driver circuit is positioned underneath ends of the first multi-layer level sub word lines, and the second sub word line driver circuit is positioned underneath ends of the second multi-layer level sub word lines.

Abstract: A method for manufacturing a catalyst for oxidative dehydrogenation reaction, a catalyst for oxidative dehydrogenation reaction, and a method for manufacturing butadiene using the same.

Abstract: A refill system includes a tempering furnace, a refill furnace which stores the molten potassium nitrate obtained by melting powdered potassium nitrate, a supply unit which supplies the molten potassium nitrate to the tempering furnace, a tempering furnace side load measuring unit which measures a load amount of the molten potassium nitrate in the tempering furnace, a refill furnace side load measuring unit which measures a load amount of the molten potassium nitrate in the refill furnace, and a central control unit which checks the load amount of the molten potassium nitrate in the tempering furnace and the refill furnace in real time, and controls the supply unit to stop supplying the molten potassium nitrate to the tempering furnace when the load amount of the molten potassium nitrate in the tempering furnace is greater than or equal to a predetermined load amount.

Abstract: A system-in-package module includes a substrate, an application specific integrated circuit (ASIC) chip on the substrate, first wafer level package (WLP) memories on the substrate spaced apart from the ASIC chip in a first direction parallel to an upper surface of the substrate, and second WLP memories on the substrate spaced apart from the ASIC chip in a direction opposite to the first direction.

Abstract: Disclosed is a device for data-based reinforcement learning. The disclosure allows an agent to learn a reinforcement learning model so as to maximize a reward for an action selectable according to a current state in a random environment, wherein a difference between a total variation rate and an individual variation rate for each action is provided as a reward for the agent.

Abstract: A method of preparing an admixture for a plasterboard is disclosed. An admixture prepared by the method and a composition for forming a plasterboard containing the admixture are also disclosed. The method includes sulfonation of polystyrene using sulfuric acid to give an admixture including a sulfonated polystyrene (SPS)-based compound of formula 1 below.

Abstract: A memory cell includes: a substrate; an active layer spaced apart from a surface of the substrate and extending in a direction which is parallel to the surface of the substrate; a bit line coupled to one side of the active layer and extending in a direction perpendicular to the surface of the substrate; a capacitor coupled to another side of the active layer and spaced apart from the surface of the substrate; and a word line vertically spaced apart from the active layer and extending in a direction intersecting with the active layer, wherein the word line includes a first notch-shaped sidewall and a second notch-shaped sidewall that face each other.

Abstract: The present specification provides a method for preparing 1,3-butadiene, the method comprising: (A) obtaining a first product comprising a light component, 1,3-butadiene, and a heavy component from a reactant comprising butene; (B) separating the heavy component from a second product comprising the 1,3-butadiene and the light component by condensing the heavy component after heat exchanging the first product; and (C) separating concentrated heavy component by reboiling the condensed heavy component.

Abstract: A memory device includes: a first memory cell mat that includes first multi-layer level sub word lines positioned over a substrate; a second memory cell mat that is laterally spaced apart from the first memory cell mat and includes second multi-layer level sub word lines; a first sub word line driver circuit that is positioned underneath the first memory cell mat; and a second sub word line driver circuit that is positioned underneath the second memory cell mat, wherein the first sub word line driver circuit is positioned underneath ends of the first multi-layer level sub word lines, and the second sub word line driver circuit is positioned underneath ends of the second multi-layer level sub word lines.

Abstract: A refrigerator includes a main body and a storage compartment provided inside the main body. A heater assembly partitions the storage compartment into a first storage compartment and a second storage compartment. The heater assembly includes a first case provided to define a surface of the first storage compartment, a second case coupled to the first case to form an accommodation space with the first case and provided to define a surface of the second storage compartment, a fixing unit formed on at least one of an inner surface of the first case and an inner surface of the second case, and a surface heater fixed to at least one of the inner surface of the first case and the inner surface of the second case by being coupled to the fixing unit. The surface heater includes a film and a heating wire printed on the film.

Abstract: The present disclosure provides a cap and a water-heating device having the same. The cap for covering a top side of a case of the water-heating device includes a cover having a receiving space that is open at the bottom, the cover including an exhaust hole formed therein for releasing exhaust gas in the case to the outside, and an exhaust duct that is received in the receiving space and coupled to the cover and that forms an exhaust channel that connects an exhaust tube included in the case and the exhaust hole and releases the exhaust gas, in which the exhaust duct is formed of a material different from a material of the cover, and the material of the exhaust duct has higher heat resistance than the material of the cover.

Abstract: A method of preparing a catalyst for oxidative dehydrogenation that includes coprecipitation and injecting inert gas or air at a specific time point to reduce the ratio of an inactive ?-Fe2O3 crystal structure, thereby improving the activity of the catalyst. Also provided is a method of performing oxidative dehydrogenation using the catalyst. When oxidative dehydrogenation of butene is performed using the catalyst, side reaction may be reduced, and selectivity for butadiene may be improved, providing butadiene with high productivity.

Abstract: An electronic device package includes a package substrate, an interposer located above the package substrate and electrically connected to the package substrate, a processing device located above the interposer and electrically connected to the interposer, at least one high bandwidth memory device located above the interposer and electrically connected to the interposer and the processing device, a power management integrated circuit device located above the interposer and electrically connected to the interposer and the processing device, and a passive device located on or inside the interposer and electrically connected to the power management integrated circuit device.

Abstract: A method for preparing a zinc ferrite-based catalyst comprising: obtaining a precipitate by bringing a metal precursor solution including a zinc precursor, a ferrite precursor, a solution containing an acid and water into contact with a basic aqueous solution; filtering the precipitate; drying the filtered precipitate; and firing the dried precipitate, wherein the solution containing the acid includes one or more of nitric acid (HNO3) and hydrocarbon acid.