Abstract: An apparatus and for preventing a glitch in a clock switching circuit includes a select signal manager and a clock gate unit. The select signal manager generates a detect change signal, provides the detect change signal as an input signal for generating a clock gate signal to the clock gate unit, and changes a muxsel signal into a select signal using the clock gate signal to select a clock intending for switching. Upon receiving the detect change signal, the clock gate unit gates a received clock, generates the clock gate signal using a level of the detect change signal as an input signal, and provides the generated clock gate signal to the select signal manager.

Abstract: An address driver includes an energy recovery circuit and an output stage connected to the energy recovery circuit. The output stage is connected to the energy recovery circuit and is formed of a pull-up MOS transistor and a pull-down MOS transistor in series. A source terminal of the pull-up MOS transistor is connected to the energy recovery circuit, and a bulk terminal of the pull-up MOS transistor is connected to a node providing a reverse bias between the source terminal and the bulk terminal of the pull-up MOS transistor. A display device employing the address driver is also provided.

Abstract: Some embodiments of the present invention provide high voltage transistors including a semiconductor substrate and a device isolation film defining an active region in the semiconductor substrate. A gate electrode extends along a central portion of the active region while maintaining a predetermined width on the semiconductor substrate. A second well is formed on both sides of the gate electrode in the semiconductor substrate, and partially extends to a bottom surface of the device isolation film. The active region in the semiconductor substrate comprises a first active region disposed under the gate electrode, and separating the device isolation film and a second active region defined by the first active region and the device isolation film. Methods of manufacturing high voltage transistors are also provided.

Abstract: A semiconductor device includes pads disposed in a chip region of a semiconductor substrate and line patterns disposed in a scribe region of the semiconductor substrate and extending toward the pads. The line patterns each have a line-width that is less than a predetermined distance between adjacent pads. Thus, respective interconnection lines connected to the pads are not short-circuited to each-other through the line patterns in the remaining scribe region after the chip region is sawed into a semiconductor chip.

Abstract: A schottky diode may include a schottky junction including a well formed in a semiconductor substrate and a first electrode contacting the first well. The well may have a first conductivity type. A first ohmic junction may include a first junction region formed in the well and a second electrode contacting the first junction region. The first junction region may have a higher concentration of the first conductivity type than the well. A first device isolation region may be formed in the semiconductor substrate separating the schottky junction and the first ohmic junction. A well guard having a second conductivity type opposite to the first conductivity type may be formed in the well. At least a portion of the well guard may, be formed under a portion of the schottky junction.

Abstract: A high-voltage semiconductor device and a method of manufacturing the high-voltage semiconductor device are provided. For example, with the above device and method drift regions having first depths are formed in a semiconductor substrate by doping first impurities. The drift regions are spaced apart from each other to define a channel region between the drift regions. Source/drain regions having second depths are formed at first portions of the drift regions by doping second impurities. Impurity accumulation regions having third depths are formed at second portions of the drift region adjacent to the source/drain regions by doping third impurities. A gate insulation layer pattern is formed on the semiconductor substrate to partially expose the source/drain regions. A gate conductive layer pattern is formed on a portion of the gate insulation layer pattern where the channel region is positioned.

Abstract: An apparatus and method are provided for decoding data of first and second control channels in a mobile communication system providing multi-media services including voice and data services. The apparatus includes an input section for selectively outputting data stored in first and second control channel input sections which store data of the first and second control channels, respectively, a viterbi decoder core block for outputting a decoding result by decoding the data output from the input section, an output section for storing the decoding result output from the viterbi decoder core block in one of first and second control channel output sections, and a controller for setting a second control channel delay flag, which is a signal for delaying data decoding for the second control channel, as “on” in order to perform data decoding for the first control channel if decoding start signals of the first and second control channels are simultaneously input.

Abstract: A method and apparatus are provided for managing a buffer that can reduce a buffer size and a number of buffers required for a receiving stage of a mobile communication system using block interleaving. In a deinterleaving buffer configured as a plurality of sub-buffers in a receiving stage of a mobile communication system for performing Reed-Solomon (RS) decoding on frames received through a wireless network, input buffer addresses of the received frames to be input to the deinterleaving buffer, and output buffer addresses of RS-decoded frames to be output to a higher layer, are set to be cyclic by a management process. The frames input to the deinterleaving buffer are RS-decoded in a sub-buffer unit and the RS-decoded frames are output to the higher layer. Newly received frames are stored in input addresses having a same pattern with a last pattern of the output addresses in the deinterleaving buffer.

Abstract: A semiconductor device fabrication method includes the steps of forming a first insulation layer and a first semiconductor layer sequentially on a semiconductor substrate having a buried diffusion region therein. A second insulation layer is formed on the first semiconductor layer. The first insulation layer, the first semiconductor layer, and the second insulation layer are then patterned to create openings that expose the buried diffusion region. A third insulation layer is formed on respective side walls of the openings on the exposed portions of the first semiconductor layer, first insulation layer and second insulation layer that form the openings. A first epitaxial layer is formed on the semiconductor substrate exposed through the openings. A second epitaxial layer is then formed on the first epitaxial layer to be connected to the first semiconductor layer, thereby forming an active base region and a second conductive type collector region in the second epitaxial layer of the first and second openings.

Abstract: The present invention relates to an integrated viterbi decoder with improved test function. The viterbi decoder recovers original symbol and data bits from convolutional binary symbol stream, reducing a noise and data loss originated from a channel fading. For enhancing the test function of the viterbi decoder, the viterbi decoder of the present invention stores predetermined test control signals in a test register. During a test, the test control signals are synchronized with a test clock apart from a frame synchronous signal of the viterbi decoder. The test time of the viterbi decoder, thus, is not restricted by the frame synchronous signal. As a result, the test time of the viterbi decoder can be reduced without addition of an external pin.

Abstract: There is provided a viterbi decoder for decoding convolutional data. The convolutional data includes punctured data and non punctured data. The decoder includes a branch metric unit for calculating branch metrics of the received convolutional data. An add-compare-select unit selects current and next path selection information and calculates a current state metric and a next state metric of the punctured data, from the branch metrics and a previous state metric. A traceback unit traces the current and the next path selection information selected in the add-compare-select unit to find a maximum likelihood path from which the convolutional data was received, and outputs decoded data. A controller generates a plurality of decoding control signals to the branch metric unit, the add-compare-select unit, and the traceback unit.

Abstract: A semiconductor device includes a semiconductor substrate, an insulating film having one portion below a surface of the semiconductor substrate and the other portion on the semiconductor substrate in a second region to the same thickness as the insulating film, which improves an operation speed even at a low voltage.

Abstract: A semiconductor device fabrication method includes the steps of forming a first insulation layer and a first semiconductor layer sequentially on a semiconductor substrate having a buried diffusion region therein. A second insulation layer is formed on the first semiconductor layer. The first insulation layer, the first semiconductor layer, and the second insulation layer are then patterned to create openings that expose the buried diffusion region. A third insulation layer is formed on respective side walls of the openings on the exposed portions of the first semiconductor layer, first insulation layer and second insulation layer that form the openings. A first epitaxial layer is formed on the semiconductor substrate exposed through the openings. A second epitaxial layer is then formed on the first epitaxial layer to be connected to the first semiconductor layer, thereby forming an active base region and a second conductive type collector region in the second epitaxial layer of the first and second openings.

Abstract: A semiconductor device includes a semiconductor substrate, an insulating film having one portion below a surface of the semiconductor substrate and the other portion above the surface of the semiconductor substrate a first region, and a semiconductor layer formed on the semiconductor substrate in a second region to the same thickness as the insulating film, which improves an operation speed even at a low voltage.

Abstract: A semiconductor device is disclosed, in which a capacitor lower electrode is formed of doped polysilicon and a capacitor upper electrode is formed of metal material to improve voltage coefficient characteristic. The semiconductor device includes a semiconductor substrate in which an active region and a field region are defined, a gate electrode and source and drain regions formed in the active region of the semiconductor substrate, a field oxide film formed in the field region of the semiconductor substrate, a capacitor lower electrode and a resistor formed of a doped polysilicon on the field oxide film, a capacitor dielectric film formed in a predetermined region on the capacitor lower electrode, and a capacitor upper electrode formed of metal material on the capacitor dielectric film.

Abstract: A semiconductor device is disclosed, in which a capacitor lower electrode is formed of doped polysilicon and a capacitor upper electrode is formed of metal material to improve voltage coefficient characteristic. The semiconductor device includes a semiconductor substrate in which an active region and a field region are defined, a gate electrode and source and drain regions formed in the active region of the semiconductor substrate, a field oxide film formed in the field region of the semiconductor substrate, a capacitor lower electrode and a resistor formed of a doped polysilicon on the field oxide film, a capacitor dielectric film formed in a predetermined region on the capacitor lower electrode, and a capacitor upper electrode formed of metal material on the capacitor dielectric film.

Abstract: A CMOS analog semiconductor apparatus and a fabrication method thereof are provided that are capable of selectively oxidizing a polysilicon to form a single layer having a conductive region and an insulation region of a semiconductor apparatus. The apparatus and method improve at least a step coverage problem of a semiconductor apparatus by using a simpler process. Further, the apparatus and method reduce a defective wiring and cracks to increase yield and reliability of the product. The apparatus can include a capacitor having a lower electrode formed on the field insulation layer of the semiconductor substrate, a first insulation layer formed on the field insulation layer including the lower electrode so as to expose a contact region for connecting with the lower electrode. An upper electrode is formed on an upper surface of the first insulation layer over the lower electrode except for the contact region. A resistance device is formed on the upper electrode.